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81. 发明授权

US4256483A 2-Alkoxy pyridazinoquinazolinone derivatives as herbicides 失效
标题翻译： 2-烷氧基哒嗪喹唑啉酮衍生物作为除草剂
公开(公告)号：US4256483A
公开(公告)日：1981-03-17
申请号：US84435
申请日：1979-10-12
申请人： Shuichiro Asao , Yoshinori Nakayama , Ryo Yoshida , Seizo Sumida , Shunichi Hashimoto
发明人： Shuichiro Asao , Yoshinori Nakayama , Ryo Yoshida , Seizo Sumida , Shunichi Hashimoto
IPC分类号： A01N43/90 , C07D487/04 , A01N43/58
CPC分类号： C07D487/04 , A01N43/90
摘要： A compound of the formula: ##STR1## wherein R is a methyl group or an ethyl group shows a strong herbicidal activity against a wide variety of weeds without any material chemical injury to crop plants.
摘要翻译：下式的化合物：其中R是甲基或乙基，对各种杂草表现出强的除草活性，对作物没有任何物质化学损伤。

82. 发明授权

US4237122A Imidazolidinedione compounds, and their production and use 失效
标题翻译：咪唑烷二酮化合物及其生产和使用
公开(公告)号：US4237122A
公开(公告)日：1980-12-02
申请号：US48745
申请日：1979-06-15
申请人： Shuichiro Asao , Shigeo Yamamoto , Yoshio Hisada , Yoshinori Nakayama , Chiyozo Takayama
发明人： Shuichiro Asao , Shigeo Yamamoto , Yoshio Hisada , Yoshinori Nakayama , Chiyozo Takayama
IPC分类号： A01N57/32 , C07D233/80 , C07F9/6506 , A01N57/16 , C07D233/40
CPC分类号： C07F9/65061 , A01N57/32
摘要： An imidazolidinedione compound of the formula: ##STR1## wherein X is a chlorine atom or a bromine atom, Y is an oxygen atom or a sulfur atom, and R.sub.1 and R.sub.2 are each a C.sub.1 -C.sub.4 alkyl group, a C.sub.1 -C.sub.4 alkoxy group, a C.sub.1 -C.sub.4 alkylthio group, an ar(C.sub.1 -C.sub.4)alkylthio group, a C.sub.1 -C.sub.4 alkoxy(C.sub.2 -C.sub.4)alkoxy group, a phenyl group, a phenoxy group, a C.sub.1 -C.sub.4 alkylthiophenoxy group, a C.sub.1 -C.sub.8 alkylamino group, a C.sub.2 -C.sub.8 alkenylamino group or a cyano(C.sub.1 -C.sub.4)alkylamino group, which is useful as an agricultural chemical such as insecticides, acaricides, nematocides and/or fungicides with high safety to mammalian animals and human beings.
摘要翻译：下式的咪唑烷二酮化合物：其中X是氯原子或溴原子，Y是氧原子或硫原子，R 1和R 2各自是C 1 -C 4烷基，C 1 -C 4烷氧基，C1-C4烷硫基，芳（C1-C4）烷硫基，C1-C4烷氧基（C2-C4）烷氧基，苯基，苯氧基，C1-C4烷硫基苯氧基，C1-C8 烷基氨基，C 2 -C 8链烯基氨基或氰基（C 1 -C 4）烷基氨基，其可用作对哺乳动物和人具有高安全性的农药，例如杀虫剂，杀螨剂，杀线虫剂和/或杀真菌剂。

83. 发明申请

US20130299699A1 STANDARD MEMBER FOR CALIBRATION AND METHOD OF MANUFACTURING THE SAME AND SCANNING ELECTRON MICROSCOPE USING THE SAME 有权
标题翻译：用于校准的标准会员及其制造方法和使用该标准物质的扫描电子显微镜
公开(公告)号：US20130299699A1
公开(公告)日：2013-11-14
申请号：US13995627
申请日：2011-12-26
申请人： Yoshinori Nakayama , Takashi Tase , Jiro Yamamoto , Osamu Inoue
发明人： Yoshinori Nakayama , Takashi Tase , Jiro Yamamoto , Osamu Inoue
IPC分类号： H01J37/26 , B32B38/10 , B32B38/00
CPC分类号： H01J37/261 , B32B38/0004 , B32B38/10 , G01B15/00 , H01J37/28 , H01J2237/2826
摘要： A standard member for automatically, stably, and highly accurately performing magnification calibration used in an electron microscope, the standard member including, on the same plane, a multilayer film cross section formed by alternately laminating materials different from each other, a plurality of first mark patterns arranged across a first silicon layer and in parallel to the multilayer film cross section, at least a pair of second mark patterns arranged across a second silicon layer thicker than the first silicon layer on the opposite side of the first mark patterns with respect to the multilayer film cross section and in parallel to the multilayer film cross section, and a silicon layer arranged on the outer side of the first mark patterns and the second mark patterns with respect to the multilayer film cross section.
摘要翻译：一种标准构件，用于在电子显微镜中自动，稳定和高精度地执行放大校准，该标准构件在同一平面上包括通过交替层叠彼此不同的材料形成的多层膜横截面，多个第一标记布置在第一硅层上并平行于多层膜横截面的图案，至少一对第二标记图案，其布置在第一标记图案相对侧上比第一硅层更厚的第二硅层，多层膜截面并且与多层膜截面平行，以及相对于多层膜截面布置在第一标记图案的外侧的硅层和第二标记图案。

84. 发明授权

US08373113B2 Calibration standard member, method for manufacturing the member and scanning electronic microscope using the member 有权
标题翻译：校准标准件，制造构件的方法和使用该构件的扫描电子显微镜
公开(公告)号：US08373113B2
公开(公告)日：2013-02-12
申请号：US13127912
申请日：2009-10-22
申请人： Yoshinori Nakayama , Takashi Tase , Jiro Yamamoto
发明人： Yoshinori Nakayama , Takashi Tase , Jiro Yamamoto
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , B82Y35/00 , G01B3/004 , G01B3/30 , G01B15/00 , H01J37/263 , H01J37/265 , H01J2237/2826
摘要： This invention provides a standard member allowing magnification calibration for use in an electron microscope to be performed with high precision. A (110) or (100) oriented silicon substrate including a magnification calibration pattern comprised of a constant pitch periodic pattern and a (110) or (100) oriented silicon substrate not including the constant pitch periodic pattern are bonded together by means of bonding without using an adhesive agent, while aligning the plane directions of the surfaces of the two substrates in the same orientation. Then, the thus bonded substrates are cleaved or diced so that their (111) surfaces or (110) surfaces become cross-section surfaces. Further, by selectively etching one side of the constant pitch periodic pattern, a standard member with no level difference and no damage to superlattice patterns and having a constant pitch concavity and convexity periodic pattern in a cross-section surface vertical to the substrate surface is created.
摘要翻译：本发明提供了允许以高精度执行在电子显微镜中使用的放大校准的标准构件。包括由恒定间距周期性图案和不包括恒定间距周期图案的（110）或（100）定向硅衬底组成的放大校准图案的（110）或（100）定向硅衬底通过粘合而结合而没有使用粘合剂，同时以相同的取向对准两个基板的表面的平面方向。然后，如此粘合的基材被切割或切割，使得它们的（111）表面或（110）表面变成横截面。此外，通过选择性地蚀刻恒定间距周期性图案的一侧，产生在与基板表面垂直的横截面中没有电平差并且不损坏超晶格图案并具有恒定的间距凹凸周期图案的标准构件。

85. 发明授权

US07947964B2 Charged particle beam orbit corrector and charged particle beam apparatus 有权
标题翻译：带电粒子束轨道校正器和带电粒子束装置
公开(公告)号：US07947964B2
公开(公告)日：2011-05-24
申请号：US11943241
申请日：2007-11-20
申请人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
发明人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
IPC分类号： G21K1/087
CPC分类号： H01J37/141 , H01J37/09 , H01J37/12 , H01J37/153 , H01J37/28 , H01J2237/142 , H01J2237/1534 , H01J2237/303
摘要： The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.
摘要翻译：本发明涉及一种用于带电粒子束的轨道校正方法，其目的在于解决常规像差校正系统中固有的问题，并提供一种用于带电粒子束的低成本，高精度，高分辨率的聚光系统。为此，所采用的是波束轨道受环形形式限制以形成朝向光束轨道中心收敛的电磁场分布的结构。因此，可以抵消以电子透镜的球面像差为代表的向外扩大的非线性动作。具体地说，这种效果可以通过设置在轴上的电子元件实现，并且经受电压以便于静电聚焦的发生。对于磁场，这种效果可以通过在旋转方向上等角地分割的表面上形成径向分布缠绕的线圈来实现，以控制磁通密度的收敛。

86. 发明授权

US07943903B2 Defect inspection method and its system 有权
标题翻译：缺陷检查方法及其系统
公开(公告)号：US07943903B2
公开(公告)日：2011-05-17
申请号：US12320574
申请日：2009-01-29
申请人： Shinji Okazaki , Shoji Hotta , Yasunari Sohda , Yoshinori Nakayama
发明人： Shinji Okazaki , Shoji Hotta , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： H01J37/153 , G01N23/00
CPC分类号： H01L22/12 , G06T7/0006 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01L2924/0002 , H01L2924/00
摘要： A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.
摘要翻译：一种能够容易地管理半导体集成图案的致命缺陷的方法，该方法能够存储由半导体集成电路设计者设计的每个图案的设计数据，以及存储具有根据其设计意图排列的图案重要性级别的设计意图数据分别。该方法还可以预测由于目标曝光系统等的特性而系统地产生的缺陷，同时在预先进行的模拟中将每个设计的电路图案暴露并描绘到晶片上，并将这些缺陷存储为热点信息。此外，该方法还能够将设计意图数据与热点信息组合，以限制可能包括关于对象半导体集成电路的特性的高可能性的系统缺陷的检查点，并显着缩短缺陷检查时间。

87. 发明申请

US20090136116A1 Method and apparatus for inspecting reticle 有权
标题翻译：检查掩模版的方法和装置
公开(公告)号：US20090136116A1
公开(公告)日：2009-05-28
申请号：US12292660
申请日：2008-11-24
申请人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
发明人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G06K2209/19 , G06T7/0004
摘要： The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.
摘要翻译：本发明提供了一种掩模版检查技术，其能够在同一层上的双重图案化技术中，使图案之间的相对位置能够在暴露于样品（例如晶片）时成为缺陷的图案被评估。用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有：用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元，用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元，用于找到两个标线之间的图案之间的相对位置; 评估单元，用于基于所述相对位置分配所述重叠精度的指标，并评估所述两个标线是否需要修理; 以及评价结果输出单元，用于输出评估结果。

88. 发明授权

US07476882B2 Calibration method for electron-beam system and electron-beam system 有权
标题翻译：电子束系统和电子束系统的校准方法
公开(公告)号：US07476882B2
公开(公告)日：2009-01-13
申请号：US11431705
申请日：2006-05-11
申请人： Yoshinori Nakayama , Yasunari Sohda
发明人： Yoshinori Nakayama , Yasunari Sohda
IPC分类号： G21K7/00 , G01N23/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/265 , G01B15/00 , H01J37/28 , H01J37/3045 , H01J2237/15 , H01J2237/1536 , H01J2237/2816 , H01J2237/2826
摘要： There is provided an electron-beam calibration technology whereby deflection calibration used in the electron-beam system can be performed with a high accuracy. A one-dimensional diffraction grating is located such that direction of the grating becomes parallel to an electron-beam scanning direction. Next, the electron-beam scanning is horizontally performed while displacing the electron-beam scanning in the perpendicular direction so that the electron-beam scanning displacement quantity will coincide with pitch size of the grating. From a secondary-electron signal image acquired, based on the presence or absence of moiré interference fringes, it can be judged whether or not the deflection calibration in the direction perpendicular to the electron-beam scanning has been correctly performed.
摘要翻译：提供了一种电子束校准技术，由此可以高精度地执行电子束系统中使用的偏转校准。定位一维衍射光栅使得光栅的方向平行于电子束扫描方向。接下来，在垂直方向移动电子束扫描的同时水平地执行电子束扫描，使得电子束扫描位移量与光栅的间距尺寸一致。根据所获得的二次电子信号图像，可以基于是否存在莫尔条纹，可以判断是否正确地进行了与电子束扫描垂直的方向上的偏转校准。

89. 发明申请

US20080203285A1 Charged particle beam measurement equipment, size correction and standard sample for correction 有权
标题翻译：带电粒子束测量设备，尺寸校正和标准样品进行校正
公开(公告)号：US20080203285A1
公开(公告)日：2008-08-28
申请号：US12010852
申请日：2008-01-30
申请人： Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi , Keiichiro Hitomi
发明人： Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi , Keiichiro Hitomi
IPC分类号： G01D18/00
CPC分类号： H01J37/28 , B82Y15/00 , H01J2237/2826
摘要： Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. Use is made of a standard sample 40 for correction comprising a plurality of correction mark members 42a, 42b, . . . , the respective correction mark members 42a, 42b, being lined up at specified intervals kept therebetween in a specified direction, and respective widths thereof, in the specified direction, differing from each other so as to be of respective sizes as pre-set. Measurement of the respective widths of the correction mark members 42a, 42b, . . . is made to obtain respective measurement widths while authorized widths of the respective widths of the correction mark members 42a, 42b, . . . are kept stored in an image processing unit of the scanning electron microscope to thereby find differences between the respective measurement widths, and authorized widths corresponding thereto, and the differences are stored as respective correction functions, which are used in correcting the measurement width of the sample.
摘要翻译：以更高的精度执行通过使用扫描电子显微镜测量样品获得的宽度的校正。使用由用于校正的标准样品40组成，包括多个校正标记构件42,4a，42b。。。，各个校正标记部件42,4a，42b以规定的间隔排列成规定的方向，并且在规定的方向上保持其各自的宽度彼此不同，从而具有预先设定的各自的尺寸。校正标记部件42,4a，42b，...的各自宽度的测量。。。被制成以获得相应的测量宽度，同时校正标记部件42,4a，42b的相应宽度的授权宽度。。。保存在扫描电子显微镜的图像处理单元中，从而发现各测量宽度与其对应的授权宽度之间的差异，并且将这些差值存储为用于校正样品的测量宽度的各种校正函数。

90. 发明申请

US20080121791A1 STANDARD REFERENCE COMPONENT FOR CALIBRATION, FABRICATION METHOD FOR THE SAME, AND SCANNING ELECTRON MICROSCOPE USING THE SAME 有权
标题翻译：用于校准的标准参考组件，相同的制造方法和使用其的扫描电子显微镜
公开(公告)号：US20080121791A1
公开(公告)日：2008-05-29
申请号：US11939596
申请日：2007-11-14
申请人： Yoshinori Nakayama , Yasunari Sohda , Keiichiro Hitomi , Hajime Koyanagi
发明人： Yoshinori Nakayama , Yasunari Sohda , Keiichiro Hitomi , Hajime Koyanagi
IPC分类号： H01J37/26 , G01D18/00
CPC分类号： H01J37/28 , H01J37/244 , H01J37/263 , H01J2237/24578 , H01J2237/2816 , H01J2237/2823 , H01J2237/2826 , H01J2237/30433 , H01J2237/3142 , H01J2237/31732
摘要： The present invention provides a standard reference component for calibration for performing magnification calibration used in the scanning electron microscope with high precision, and provides a scanning electron microscope technique using it. Provided is a standard reference component for calibration for calibrating a scanning electron microscope that measures a length of a pattern in an observation area from information on the intensity of secondary electrons or reflected electrons generated by scanning an incident electron beam in the observation area on a measuring sample, having: a first substrate on which a multiple-layer is laminated and a second substrate with a recess for holding the first substrate, wherein the first substrate is held in the recess of the second substrate so that a normal direction of the multiple-layer surface may be roughly perpendicular to a normal direction of the second substrate surface, and the multiple-layer has a multiple-layer structure of a film containing silicon and a film containing molybdenum.
摘要翻译：本发明提供了一种用于校准的标准参考部件，用于以高精度执行扫描电子显微镜中使用的放大校准，并提供使用它的扫描电子显微镜技术。提供了用于校准扫描电子显微镜的标准参考部件，该扫描电子显微镜从关于通过扫描观察区域中的入射电子束产生的二次电子或反射电子的强度的信息来测量观察区域中的图案的长度具有：层叠有多层的第一基板和具有用于保持所述第一基板的凹部的第二基板，其中，所述第一基板保持在所述第二基板的所述凹部中，层表面可以大致垂直于第二基板表面的法线方向，并且多层具有含硅的膜和含有钼的膜的多层结构。

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