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81. 发明授权

US07851777B2 Memory device including resistance-changing function body 有权
标题翻译：记忆体包括电阻变化功能体
公开(公告)号：US07851777B2
公开(公告)日：2010-12-14
申请号：US12271837
申请日：2008-11-14
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/02
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

82. 发明申请

US20090237154A1 SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC EQUIPMENT 有权
标题翻译：半导体器件，液晶显示器件和电子设备
公开(公告)号：US20090237154A1
公开(公告)日：2009-09-24
申请号：US12022785
申请日：2008-01-30
申请人： Hiroshi Iwata , Yoshiji Ohta
发明人： Hiroshi Iwata , Yoshiji Ohta
IPC分类号： H01L25/00
CPC分类号： G09G3/3648 , G09G2300/0809 , G09G2320/0214
摘要： The semiconductor device of the present invention has a circuit block in which m (m is an integer of not smaller than two) sets of first through m-th transistor columns where two or more transistors are connected in series, one terminal of the first through m-th transistor columns is connected to a first output node, and the other terminal of the first through m-th transistor columns is connected to a second output node. A control signal for substantially simultaneously turning on and off all the transistors of the first through m-th transistor columns is inputted to the control input terminals of the transistors of the first through m-th transistor columns.
摘要翻译：本发明的半导体器件具有其中两个或多个晶体管串联连接的第一至第m晶体管列的m（m为不小于2的整数）的电路块，第一至第第m晶体管列连接到第一输出节点，第一至第m晶体管列的另一端连接到第二输出节点。用于基本上同时导通和关断第一至第m晶体管列的所有晶体管的控制信号被输入到第一至第三晶体管列的晶体管的控制输入端。

83. 发明授权

US07582926B2 Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus 有权
标题翻译：半导体存储装置及其制造方法和操作方法以及便携式电子装置
公开(公告)号：US07582926B2
公开(公告)日：2009-09-01
申请号：US11289493
申请日：2005-11-30
申请人： Hiroshi Iwata , Akihide Shibata
发明人： Hiroshi Iwata , Akihide Shibata
IPC分类号： H01L29/76
CPC分类号： H01L29/66833 , B82Y10/00 , G11C16/0466 , H01L21/84 , H01L27/105 , H01L27/115 , H01L27/11568 , H01L27/118 , H01L27/1203 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor layer in contact with the first conductivity type region; a memory functional element disposed on the semiconductor layer across the boundary of the first and second conductivity type regions; and an electrode provided in contact with the memory functional element and on the first conductivity type region via an insulation film, and a portable electronic apparatus comprising the semiconductor storage device. The present invention can fully cope with scale-down and high-integration by constituting a selectable memory cell substantially of one device.
摘要翻译：本发明提供一种半导体存储装置，具有：形成在半导体层中的第一导电型区域; 形成在与第一导电类型区域接触的半导体层中的第二导电类型区域; 存储功能元件，设置在跨越第一和第二导电类型区域的边界的半导体层上; 以及通过绝缘膜与所述存储功能元件和所述第一导电类型区域接触地设置的电极，以及包括所述半导体存储装置的便携式电子设备。本发明可以通过构成基本上由一个设备构成的可选存储单元来完全应对缩小和高集成度。

84. 发明申请

US20090118264A1 Medicament having neovascularization promoting action 审中-公开
标题翻译：具有新血管形成促进作用的药物
公开(公告)号：US20090118264A1
公开(公告)日：2009-05-07
申请号：US12318248
申请日：2008-12-23
申请人： Ryozo Nagai , Ichiro Manabe , Takayuki Shindo , Hiroshi Iwata , Koichi Shudo , Hiroyuki Kagechika
发明人： Ryozo Nagai , Ichiro Manabe , Takayuki Shindo , Hiroshi Iwata , Koichi Shudo , Hiroyuki Kagechika
IPC分类号： A61K31/551 , A61K31/4164 , A61K31/39 , A61K31/4439 , A61P9/10
CPC分类号： A61K31/551
摘要： Methods of use of medicaments having neovascularization promoting action, which medicaments comprise a retinoid antagonist such as 4-(5H-7,8,9,10-tetrahydro-5,7,7,10,10-pentamethylbenzo[e]naphtho[2,3-b][1-,4]diazepin-13-yl)benzoic acid as an active ingredient.
摘要翻译：使用具有新血管形成促进作用的药物的方法，该药物包含类视黄醇拮抗剂如4-（5H-7,8,9,10-四氢-5,7,7,10,10-五甲基苯并[e]萘并[2 ，3-b] [1-，4]二氮杂-13-基）苯甲酸作为活性成分。

85. 发明申请

US20090085025A1 MEMORY DEVICE INCLUDING RESISTANCE-CHANGING FUNCTION BODY 有权
标题翻译：包括电阻变化功能体的存储器件
公开(公告)号：US20090085025A1
公开(公告)日：2009-04-02
申请号：US12271837
申请日：2008-11-14
申请人： Nobutoshi ARAI , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi ARAI , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L45/00 , H01L21/265
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

86. 发明授权

US07262992B2 Hearing aid 有权
标题翻译：助听器
公开(公告)号：US07262992B2
公开(公告)日：2007-08-28
申请号：US10844525
申请日：2004-05-13
申请人： Akihide Shibata , Takayuki Ogura , Hiroshi Iwata
发明人： Akihide Shibata , Takayuki Ogura , Hiroshi Iwata
IPC分类号： G11C11/34 , G11C7/00
CPC分类号： H04R25/505 , H04R2225/41
摘要： A hearing aid comprising a data memory includes a plurality of semiconductor memory cells. The semiconductor memory cell has a gate insulating film formed on a semiconductor substrate, on a well region provided in the semiconductor substrate, or on a semiconductor film deposited on an insulator; a single gate electrode formed on the gate insulating film; two memory functional units formed on both sidewalls of the single gate electrode; a channel formation region formed under the single gate electrode; and first diffusion regions disposed on both sides of the channel formation region. The semiconductor memory cell is constituted so as to change an amount of currents flowing from one of the first diffusion regions to the other first diffusion region according to an amount of charges retained in the memory functional unit or a polarization vector when a voltage is applied to the gate electrode.
摘要翻译：包括数据存储器的助听器包括多个半导体存储单元。半导体存储单元具有形成在半导体衬底上的阱绝缘膜，设置在半导体衬底中的阱区或沉积在绝缘体上的半导体膜; 形成在栅极绝缘膜上的单个栅电极; 形成在单个栅电极的两个侧壁上的两个存储功能单元; 形成在单个栅电极下面的沟道形成区域; 以及设置在通道形成区域两侧的第一扩散区域。半导体存储单元被构成为根据保存在存储功能单元中的电荷量或者施加电压时的极化矢量来改变从第一扩散区域之一流向另一个第一扩散区域的电流量栅电极。

87. 发明授权

US07170789B2 Semiconductor storage device and electronic equipment 有权
标题翻译：半导体存储设备和电子设备
公开(公告)号：US07170789B2
公开(公告)日：2007-01-30
申请号：US11213927
申请日：2005-08-30
申请人： Hiroshi Iwata , Yoshifumi Yaoi , Akihide Shibata
发明人： Hiroshi Iwata , Yoshifumi Yaoi , Akihide Shibata
IPC分类号： G11C11/34 , G11C7/00
CPC分类号： G11C16/28 , G11C7/14
摘要： Characteristic fluctuation of a reference cell due to read disturb is prevented. A memory cell 27m and a reference cell 27r respectively have memory function bodies that are formed on both sides of a gate electrode and have a function to retain electric charge or polarization. The memory cell 27m can store independent information pieces in memory function bodies 27mr and 27ml located on both sides of the gate electrode and the independent information pieces are read therefrom. On the other hand, in the reference cell 27r, only the information piece stored in a memory function body 27rl located on one side of the gate electrode is referred to in a sense amplifier 22.
摘要翻译：防止由于读取干扰引起的参考单元的特性波动。存储单元27m和参考单元27r分别具有形成在栅电极的两侧上并具有保持电荷或极化的功能的记忆功能体。存储单元27m可以将独立的信息块存储在位于栅电极两侧的存储器功能体27mr和27ml中，并从其中读取独立的信息。另一方面，在参考单元27r中，在读出放大器22中仅参考存储在位于栅电极一侧的存储器功能体27r1中的信息片。

88. 发明授权

US07167402B2 Semiconductor storage device, redundancy circuit thereof, and portable electronic device 有权
标题翻译：半导体存储装置，其冗余电路和便携式电子装置
公开(公告)号：US07167402B2
公开(公告)日：2007-01-23
申请号：US10848481
申请日：2004-05-19
申请人： Yoshifumi Yaoi , Hiroshi Iwata , Akihide Shibata , Yoshinao Morikawa , Masaru Nawaki
发明人： Yoshifumi Yaoi , Hiroshi Iwata , Akihide Shibata , Yoshinao Morikawa , Masaru Nawaki
IPC分类号： G11C29/00 , G11C11/34
CPC分类号： G11C29/838 , G11C16/0475 , G11C16/22 , G11C29/785 , G11C29/787 , G11C29/789 , H01L29/42332 , H01L29/7887 , H01L29/7923
摘要： A semiconductor storage device includes a plurality of memory elements and a redundancy circuit. Each of the memory elements includes a gate electrode provided on a semiconductor layer, a gate insulating film intervening between the gate electrode and the semiconductor layer, a channel region provided under the gate electrode, diffusion regions respectively provided at both sides of the channel region, the diffusion regions having a conductivity type which is opposite a conductivity type of the channel region, and memory functioning members respectively provided at both sides of the gate electrode, the memory functioning members having a function of holding charge. The redundancy circuit addresses a single chip memory including cells associated with a plurality of redundant lines and includes a decoder for selecting a redundant row. The semiconductor storage device can permanently inactivate further programming of the redundancy circuit in order to prevent a user from performing inadvertent programming.
摘要翻译：半导体存储装置包括多个存储元件和冗余电路。每个存储元件包括设置在半导体层上的栅极电极，介于栅电极和半导体层之间的栅极绝缘膜，设置在栅电极下方的沟道区，分别设置在沟道区两侧的扩散区，具有与沟道区的导电类型相反的导电类型的扩散区和分别设置在栅极两侧的存储功能元件，存储功能元件具有保持电荷的功能。冗余电路解决包括与多条冗余线相关联的单元的单个芯片存储器，并且包括用于选择冗余行的解码器。半导体存储设备可以永久地停用冗余电路的进一步编程，以防止用户执行无意编程。

89. 发明授权

US07161207B2 Computer system, memory structure and structure for providing storage of data 失效
标题翻译：计算机系统，存储器结构和结构，用于提供数据存储
公开(公告)号：US07161207B2
公开(公告)日：2007-01-09
申请号：US10840173
申请日：2004-05-05
申请人： Koji Hamaguchi , Masaru Nawaki , Yoshinao Morikawa , Hiroshi Iwata , Akihide Shibata
发明人： Koji Hamaguchi , Masaru Nawaki , Yoshinao Morikawa , Hiroshi Iwata , Akihide Shibata
IPC分类号： H01L29/79
CPC分类号： H01L29/66833 , G11C16/10 , G11C16/30 , H01L21/28282 , H01L29/7923
摘要： A computer system comprising: (A) a CPU; (B) a memory arrangement comprising: (i) a side-wall memory array including a plurality of side-wall memory transistors; (ii) a charge pump; (iii) a plurality of switching circuits; and (iv) logic circuitry; and (C) a system bus, wherein each of the side-wall memory transistors comprises: a gate electrode formed on a semiconductor layer with a gate insulating film formed on the semiconductor layer; a channel region formed below the gate electrode; a pair of diffusion regions formed on the both sides of the channel region and having a conductive type opposite to that of the channel region; and a pair of memory functional units formed on the both sides of the gate electrode and having a function of retaining charges.
摘要翻译：一种计算机系统，包括：（A）CPU; （B）存储装置，包括：（i）包括多个侧壁存储晶体管的侧壁存储器阵列; （ii）电荷泵; （iii）多个开关电路; 和（iv）逻辑电路; 和（C）系统总线，其中每个侧壁存储晶体管包括：形成在半导体层上的栅电极，其上形成有在半导体层上的栅极绝缘膜; 形成在栅电极下方的沟道区; 一对扩散区，形成在沟道区的两侧，具有与沟道区相反的导电类型; 以及形成在栅电极的两侧并具有保持电荷的功能的一对记忆功能单元。

90. 发明授权

US07135095B2 Papermaking press felt and press apparatus for a papermaking machine 有权
标题翻译：用于造纸机的造纸压榨毛毯和压榨装置
公开(公告)号：US07135095B2
公开(公告)日：2006-11-14
申请号：US10693271
申请日：2003-10-24
申请人： Hiroyuki Oda , Shin Kawashima , Kazumasa Watanabe , Minenari Imada , Hiroshi Iwata , Daisuke Goto , Hidemasa Iijima , Naoyuki Harada
发明人： Hiroyuki Oda , Shin Kawashima , Kazumasa Watanabe , Minenari Imada , Hiroshi Iwata , Daisuke Goto , Hidemasa Iijima , Naoyuki Harada
IPC分类号： D21F7/08 , D21F3/02 , B30B3/02 , B32B5/06
CPC分类号： D21F3/04 , D21F7/083 , Y10S162/90 , Y10T442/3732 , Y10T442/50 , Y10T442/60
摘要： A press felt for use in a papermaking machine comprises a base body, a batt material and a hydrophilic nonwoven fabric, all intertwiningly integrated by needle punching. The batt material comprises a staple fiber, and is composed of a wet paper web side layer and a press side layer. The hydrophilic nonwoven fabric is provided in the wet paper web side layer. The hydrophilic character of the nonwoven fabric improves the movement of water to the nonwoven fabric, and the holding the water in the nonwoven fabric. As a result rewetting is prevented more effectively than in the case of prior press felts.
摘要翻译：在造纸机中使用的压榨机包括基体，絮垫材料和亲水性无纺布，其全部通过针刺相互整合。絮垫材料包括短纤维，由湿纸幅侧层和压制侧层构成。亲水性无纺布设置在湿纸幅侧层中。无纺布的亲水特性改善了水到无纺布的移动，并且将水保持在无纺织物中。因此，比以前的新闻纸更能有效地防止再湿。

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