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81. 发明授权

US06846696B2 Method for manufacturing solar battery 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US06846696B2
公开(公告)日：2005-01-25
申请号：US10151300
申请日：2002-05-21
申请人： Hiroki Adachi , Kazuo Nishi , Masato Yonezawa , Yukihiro Isobe , Hisato Shinohara
发明人： Hiroki Adachi , Kazuo Nishi , Masato Yonezawa , Yukihiro Isobe , Hisato Shinohara
IPC分类号： H01L31/04 , H01L21/77 , H01L21/8238 , H01L31/00 , H01L31/042 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/035281 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The constitution of the invention is characterized by comprising: a first step forming the lower electrode and the semiconductor layer on the insulating substrate by laminating; a second step forming a protective film on surface of the semiconductor; a third step forming an opening portion at the semiconductor layer, or the semiconductor layer and the lower electrode by laser beam process after the second step; and a fourth step removing the protective film.
摘要翻译：本发明旨在防止太阳能电池的特性的下降，并且通过激光束工艺在产生太阳能电池的方法中，在激光束工艺产生的粉末状态的颗粒产生的产率产生。本发明的结构的特征在于包括：通过层压在绝缘基板上形成下电极和半导体层的第一步骤; 在半导体的表面上形成保护膜的第二步骤; 在第二步骤之后通过激光束处理在半导体层形成开口部分的第三步骤或半导体层和下部电极; 以及除去保护膜的第四步骤。

82. 发明授权

US09772221B2 Multidirectional photodetector, a portable communication tool having thereof and a method of displaying 有权
公开(公告)号：US09772221B2
公开(公告)日：2017-09-26
申请号：US12546725
申请日：2009-08-25
申请人： Kazuo Nishi , Yu Yamazaki , Tomoyuki Iwabuchi , Keisuke Miyagawa
发明人： Kazuo Nishi , Yu Yamazaki , Tomoyuki Iwabuchi , Keisuke Miyagawa
IPC分类号： H01L27/14 , G01J1/02 , G01J1/42 , G02F1/133 , G02F1/1333 , H04M1/02
CPC分类号： G01J1/0209 , G01J1/0233 , G01J1/0247 , G01J1/0271 , G01J1/4204 , G01J1/4228 , G02F1/13318 , G02F2001/133342 , G09G2360/04 , H04M1/0214 , H04M1/0245 , H04M2250/12
摘要： A photodetector of the invention is characterized by having a plurality of detector elements that are arranged over a light-transparent substrate and are connected in parallel. A foldable portable communication tool having two display portions of the invention is characterized by including one photodetector which includes a plurality of detector elements connected in parallel.

83. 发明授权

US08592936B2 Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device 有权
标题翻译：光电转换装置和电子装置以及光电转换装置的制造方法
公开(公告)号：US08592936B2
公开(公告)日：2013-11-26
申请号：US13528878
申请日：2012-06-21
申请人： Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara
发明人： Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara
IPC分类号： H01L31/00
CPC分类号： H01L31/147 , H01L27/12 , H01L27/1214 , H01L31/153 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
摘要翻译：一种光电转换装置，包括：第一基板，其端部被切割成倾斜或具有凹槽形状; 在所述第一衬底上的光电二极管和放大器电路; 电连接到所述光电二极管并且设置在所述第一基板的一个端部上的第一电极; 电连接到所述放大器电路并且设置在所述第一基板的另一端部上的第二电极; 以及在其上具有第三和第四电极的第二基板。第一电极和第二电极分别被附接到第三和第四电极，导电材料不仅设置在第一，第二，第三和第四电极的彼此面对，而且在第一和第二电极的第一和第二电极的侧表面处第二电极，以增加光电转换装置与安装有光电转换装置的部件之间的粘合性。

84. 发明授权

US08242585B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08242585B2
公开(公告)日：2012-08-14
申请号：US12965367
申请日：2010-12-10
申请人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
发明人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
IPC分类号： H01L29/06 , H01L31/0352
CPC分类号： H01L31/0203 , H01L27/1446 , H01L27/14618 , H01L31/048 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
摘要翻译：本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以使其安装在高密度的布线板上，并且还提供其制造方法。根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部一部分。

85. 发明授权

US08207591B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US08207591B2
公开(公告)日：2012-06-26
申请号：US13206544
申请日：2011-08-10
申请人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
发明人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： H01L31/102
CPC分类号： H01L31/1055 , H01L31/02162 , H01L31/022408 , H01L31/02325
摘要： A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer. An insulating layer is over the third semiconductor layer, and a second electrode is over the insulating layer and is electrically connected to the third semiconductor layer through the insulating layer. The third semiconductor layer and a part of the second semiconductor layer are removed in a region of the photoelectric conversion layer that does not overlap the insulating layer.
摘要翻译：光电转换装置包括：第一电极; 并且在第一电极之上，包括具有一个导电性的第一半导体层，第一半导体层上的第二半导体层和具有与第二半导体层的一个导电性相反的导电性的第三半导体层的光电转换层。绝缘层在第三半导体层之上，第二电极在绝缘层的上方，并通过绝缘层与第三半导体层电连接。在不与绝缘层重叠的光电转换层的区域中去除第三半导体层和第二半导体层的一部分。

86. 发明授权

US08138589B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08138589B2
公开(公告)日：2012-03-20
申请号：US12892381
申请日：2010-09-28
申请人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
发明人： Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
IPC分类号： H01L23/02
CPC分类号： H01L27/14683 , H01L27/14618 , H01L31/0203 , H01L2224/13 , H01L2924/07811 , H01L2924/00
摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
摘要翻译：在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。然后，具有连接端子的插入件被接合到半导体电路部分。之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。然后，将模塑树脂在预定条件下加热以硬化。

87. 发明申请

US20110291090A1 Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device 有权
标题翻译：光电转换装置及其制造方法及半导体装置
公开(公告)号：US20110291090A1
公开(公告)日：2011-12-01
申请号：US13206544
申请日：2011-08-10
申请人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
发明人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： H01L31/0376
CPC分类号： H01L31/1055 , H01L31/02162 , H01L31/022408 , H01L31/02325
摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.
摘要翻译：光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

88. 发明授权

US07888714B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07888714B2
公开(公告)日：2011-02-15
申请号：US11226472
申请日：2005-09-15
申请人： Hidekazu Takahashi , Junya Maruyama , Daiki Yamada , Naoto Kusumoto , Kazuo Nishi , Hiroki Adachi , Yuusuke Sugawara
发明人： Hidekazu Takahashi , Junya Maruyama , Daiki Yamada , Naoto Kusumoto , Kazuo Nishi , Hiroki Adachi , Yuusuke Sugawara
IPC分类号： H01L31/062
CPC分类号： H01L27/1214 , H01L27/14609 , H01L27/14645 , H01L27/14692
摘要： Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.
摘要翻译：考虑到传感器元件的高输出和小型化的进一步促进，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。另一个目的是提供一种提高传感器元件的产量的方法。根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

89. 发明申请

US20110000545A1 Photoelectric Conversion Device and Manufacturing Method Thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110000545A1
公开(公告)日：2011-01-06
申请号：US12820439
申请日：2010-06-22
申请人： Kazuo Nishi , Naoto Kusumoto
发明人： Kazuo Nishi , Naoto Kusumoto
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased.
摘要翻译：包括第一电极，具有一种导电类型的第一杂质半导体层，本征半导体层，与一种导电类型具有相反导电类型的第二杂质半导体层和透光第二电极的堆叠形成在绝缘体。透光第二电极和第二杂质半导体层具有一个或多个开口。在第二杂质半导体层和本征半导体层之间的界面的水平处，一个开口的一个壁的一部分与相同开口的壁的相对部分之间的最短距离小于孔的扩散长度本征半导体层。因此，抑制复合，使得由于开口而产生更多的光载流子作为电流而被取出，从而提高了转换效率。

90. 发明授权

US07838812B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07838812B2
公开(公告)日：2010-11-23
申请号：US12350271
申请日：2009-01-08
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H01J40/14 , H03F3/08 , H03K17/78 , H04N3/14
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

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