专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US08121163B2 Semiconductor laser diode apparatus and method of fabricating the same 失效
标题翻译：半导体激光二极管装置及其制造方法
公开(公告)号：US08121163B2
公开(公告)日：2012-02-21
申请号：US12047924
申请日：2008-03-13
申请人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
发明人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0207 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/3201 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
摘要翻译：获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离，第一和第二个方向和基地之间大的扭曲。

82. 发明授权

US08085825B2 Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus 失效
标题翻译：制造半导体激光二极管装置和半导体激光二极管装置的方法
公开(公告)号：US08085825B2
公开(公告)日：2011-12-27
申请号：US12043724
申请日：2008-03-06
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0216 , H01L2224/48247 , H01S5/0201 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.
摘要翻译：获得了当半导体激光二极管部分的宽度小时也能够抑制半导体激光二极管处理困难的半导体激光二极管装置。这种制造半导体激光二极管装置的方法包括以下步骤：在与第一方向交叉的第二方向上以规定的间隔在第一基板上形成多个第一半导体激光二极管部分，其中第一方向与空腔延伸，将多个第一半导体激光二极管部分的第一半导体激光二极管部分分配到第二基板，将与第二基板接合的多个第一半导体激光二极管部分中的一个或一些与第一基板分离; 以及沿着所述第二方向分割所述第二基板。

83. 发明授权

US07939929B2 Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US07939929B2
公开(公告)日：2011-05-10
申请号：US11529475
申请日：2006-09-29
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L23/52
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0213 , H01S5/02272 , H01S5/02492 , H01S5/0425 , H01S5/2009 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2301/176 , H01S2304/04 , H01S2304/12
摘要： A semiconductor laser device includes a supporting substrate; a semiconductor laser device portion which is formed on a surface of the supporting substrate, and which includes a pair of cavity surfaces; an adhesive layer with which the supporting substrate and the semiconductor laser device portion are adhered to each other; and areas, in which no adhesive layer exists, the areas being near the ends respectively of the cavity surfaces, the ends being closer to the supporting substrate.
摘要翻译：半导体激光装置包括：支撑基板; 半导体激光器件部分，其形成在所述支撑基板的表面上，并且包括一对空腔表面; 支撑基板和半导体激光装置部分彼此粘合的粘合层; 以及其中没有粘合剂层的区域，分别位于空腔表面的端部附近的区域，端部更靠近支撑衬底。

84. 发明申请

US20110013659A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110013659A1
公开(公告)日：2011-01-20
申请号：US12919847
申请日：2009-02-25
申请人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
发明人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/028 , H01L21/30
CPC分类号： H01S5/10 , B82Y20/00 , H01L2224/48463 , H01L2224/73265 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/02276 , H01S5/028 , H01S5/1064 , H01S5/3211 , H01S5/34333 , H01S5/4031
摘要： A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first semiconductor device portion has a cavity, a first conductivity type first cladding layer (22) having a first region (22a) having a first width in a second direction (direction A) intersecting with a first direction (direction B) in which the cavity extends and a second region (22b) having a second width smaller than the first width in the second direction, formed on the first region, and a first active layer (23) and a second conductivity type second cladding layer (24) formed on the second region of the first cladding layer.
摘要翻译：获得具有能够抑制裂纹的有源层附近的包覆层的半导体激光装置。该半导体激光器件（100）包括接合到第一半导体器件部分的第一半导体器件部分（120）和支撑衬底（10），并且第一半导体器件部分具有腔体，第一导电类型的第一覆盖层（22 ）具有第一区域（22a），所述第一区域（22a）在与所述空腔延伸的第一方向（方向B）相交的第二方向（方向A）上具有第一宽度，以及具有小于所述第一宽度的第二宽度的第二区域形成在第一区域上的第二方向，以及形成在第一包层的第二区域上的第一有源层（23）和第二导电型第二覆盖层（24）。

85. 发明授权

US07869480B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07869480B2
公开(公告)日：2011-01-11
申请号：US12126365
申请日：2008-05-23
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译：在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

86. 发明申请

US20100284433A1 SEMICONDUCTOR LASER DEVICE AND DISPLAY 审中-公开
标题翻译：半导体激光器件和显示器
公开(公告)号：US20100284433A1
公开(公告)日：2010-11-11
申请号：US12812715
申请日：2009-09-17
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
IPC分类号： H01S5/40 , H01S5/34 , H01S5/343 , H01S5/026
CPC分类号： H04N9/3161 , B82Y20/00 , H01L2224/48091 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02476 , H01S5/0425 , H01S5/22 , H01S5/24 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4093 , H04N9/3105 , H04N9/3111 , H01L2924/00014
摘要： A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions, and a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the green semiconductor laser element, the blue semiconductor laser element and the red semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element whose total output power is relatively small is larger than the number of the laser beam emitting portions of the semiconductor laser element, having a plurality of laser beam emitting portions, whose total output power is relatively large, or the number of the semiconductor laser element, having one laser beam emitting portion, whose output power is relatively large.
摘要翻译：获得能够容易地获得期望色调的半导体激光器件。该半导体激光装置（100）包括具有一个或多个激光束发射部的绿色半导体激光元件（30），具有一个或多个激光束发射部的蓝色半导体激光元件（50）和红色半导体具有一个或多个激光束发射部分的激光元件（10）。绿色半导体激光元件，蓝色半导体激光元件和红色半导体激光元件中的至少两个半导体激光元件具有这样的关系：总输出功率相对较小的半导体激光元件的激光束发射部分的数量是大于具有多个总输出功率相对较大的激光束发射部分的半导体激光元件的激光束发射部分的数量或具有一个激光束发射部分的半导体激光元件的数量，其中，输出功率比较大。

87. 发明授权

US07829900B2 Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权
标题翻译：基于氮化物的半导体元件和形成氮化物基半导体的方法
公开(公告)号：US07829900B2
公开(公告)日：2010-11-09
申请号：US12071978
申请日：2008-02-28
申请人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
发明人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01S5/0207 , H01S5/22 , H01S5/2214 , H01S5/227 , H01S5/34333 , H01S2304/12
摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.
摘要翻译：获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

88. 发明申请

US20090097523A1 SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20090097523A1
公开(公告)日：2009-04-16
申请号：US12333764
申请日：2008-12-12
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S5/4087
摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.
摘要翻译：第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。

89. 发明授权

US07450622B2 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US07450622B2
公开(公告)日：2008-11-11
申请号：US11723846
申请日：2007-03-22
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01S5/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
摘要翻译：获得能够稳定横向光束缚的氮化物系半导体发光元件。该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中路径部分。因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

90. 发明申请

US20080267238A1 SEMICONDUCTOR LASER DIODE ELEMENT AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光二极管元件及其制造方法
公开(公告)号：US20080267238A1
公开(公告)日：2008-10-30
申请号：US12109989
申请日：2008-04-25
申请人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
发明人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/24
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0202 , H01S5/0216 , H01S5/0217 , H01S5/02212 , H01S5/02272 , H01S5/2009 , H01S5/3201 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.
摘要翻译：半导体激光二极管元件包括半导体激光二极管部分，其包括在空腔延伸的第一方向上延伸的脊部分，沿着脊部形成的凹槽和沿着更远离脊部的一侧沿着凹槽形成的支撑部分，以及保持所述支撑部和所述脊部之间的槽，以及通过熔融层粘合到所述半导体激光二极管部的支撑基板，其中，所述熔融层形成为嵌入所述槽中，从所述脊部到支撑基板和从支撑部分到支撑基板的空间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式