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    • 82. 发明申请
    • VERTICAL CAVITY SURFACE EMITTING LASER AND IMAGE FORMING APPARATUS
    • 垂直孔表面发射激光和图像形成装置
    • US20120106587A1
    • 2012-05-03
    • US13279680
    • 2011-10-24
    • Toshimitsu MatsuuTakeshi Uchida
    • Toshimitsu MatsuuTakeshi Uchida
    • H01S3/08
    • H01S5/18358B82Y20/00H01S5/0654H01S5/1221H01S5/18311H01S5/34326
    • Provided is a vertical cavity surface emitting laser that includes a plurality of laminated semiconductor layers including an active layer and that oscillates at a wavelength λ1, wherein a resonator is formed by upper and lower multilayer reflecting mirrors has a structure that generates a longitudinal multimode, and the first active layer is arranged at a position shifted from a standing wave loop of the first longitudinal mode. According to the vertical cavity surface emitting laser capable of suppressing oscillation of the second longitudinal mode with a large gain and capable of single longitudinal mode oscillation based on the first longitudinal mode, the longitudinal mode spacing is narrowed by increasing the length of the resonator for single transverse mode oscillation at a high output, and the single longitudinal mode oscillation is possible even if longitudinal multimode oscillation occurs.
    • 提供了一种垂直腔表面发射激光器,其包括多个层叠半导体层,包括有源层并且以波长λ1振荡,其中由上下多层反射镜形成的谐振器具有产生纵向多模的结构, 第一有源层布置在从第一纵向模式的驻波环路偏移的位置处。 根据能够以大的增益抑制第二纵模的振荡的垂直腔表面发射激光器,并且能够基于第一纵向模式而能够进行单纵模振荡,通过增加单谐振器的长度来缩小纵模间距 即使产生纵向多模振荡,也可以在高输出时进行横模振荡。
    • 86. 发明申请
    • VERTICAL CAVITY SURFACE EMITTING LASER
    • 垂直孔表面发射激光
    • US20100322277A1
    • 2010-12-23
    • US12817514
    • 2010-06-17
    • Takeshi Uchida
    • Takeshi Uchida
    • H01S5/12H01S5/42
    • H01S5/18361H01S5/18386H01S2301/166
    • A vertical cavity surface emitting laser includes, a lower DBR layer; an upper DBR layer; an active layer existing between the lower DBR layer and the upper DBR layer; and a laser emitting region provided on a surface layer of the upper DBR layer, in which the upper DBR layer includes a doped first semiconductor multilayer film layer and an undoped second semiconductor multilayer film layer; an electrode provided on the upper DBR layer is formed in a region which is on an upper part of the first semiconductor multilayer film layer and is surrounded by the second semiconductor multilayer film layer; the laser emitting region is formed on a surface layer of the second semiconductor multilayer film layer; and the surface layer of the first semiconductor multilayer film layer is formed by a contact layer and the second semiconductor multilayer film layer is stacked on the contact layer.
    • 垂直腔表面发射激光器包括下DBR层; 上DBR层; 存在于下DBR层和上DBR层之间的活性层; 以及设置在上DBR层的表面层上的激光发射区域,其中上DBR层包括掺杂的第一半导体多层膜层和未掺杂的第二半导体多层膜层; 设置在上DBR层上的电极形成在第一半导体多层膜层的上部并被第二半导体多层膜层包围的区域中; 激光发射区形成在第二半导体多层膜层的表面层上; 并且第一半导体多层膜层的表面层由接触层形成,并且第二半导体多层膜层堆叠在接触层上。