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    • 81. 发明专利
    • INSTRUCTION INPUT SYSTEM
    • JPH07281856A
    • 1995-10-27
    • JP6830894
    • 1994-04-06
    • HITACHI LTD
    • MORIMOTO YOSHIAKITANAKA AKIRA
    • G06F3/14G06F3/048
    • PURPOSE:To enable a user to easily search for desired operation through a pull-down menu by providing an instruction to be processed with additional information characteristic to the instruction and performing the processing corresponding to the additional information of the instruction when it is selected by using an extended function selecting means. CONSTITUTION:A coordinate input means 8 which indicates a menu displayed on a display 7, a function selecting means 9 as a trigger for starting a menu processing, a menu processing means 20 which performs the actual menu processing, and an extended function selecting means 10 are added. Root menu information 2000 corresponding to each root menu item of the pull-down menu is considered. The root menu information 2000 has a root menu name and submenu information 2100 on a submenu attached to the root menu. And, a function which performs an extended processing corresponding to the contents of the submenu information 2100 corresponding to the state of the extended function selecting means 10 is added to a conventional menu processing means 20.
    • 85. 发明专利
    • MULTILAYER CIRCUIT BOARD AND MANUFACTURE THEREOF
    • JPH03150895A
    • 1991-06-27
    • JP28867689
    • 1989-11-08
    • HITACHI LTD
    • USHIFUSA NOBUYUKIYAMADA KAZUJISOGA TASAOTANAKA AKIRAOKAMOTO MASAHIDE
    • H05K3/46
    • PURPOSE:To enable high-speed transmission by lessening the permittivity of insulating layers between X-direction and Y-direction line wiring layers and power source layers or ground layers, and enlarging that of the insulating layers between the X-direction and Y-direction line wiring layers and between the power source layers or ground layers. CONSTITUTION:The permittivity of the insulating layers 2 between X-direction and Y-direction line wiring layers 3 and power source layers 4 or ground layers 4 is made to be smaller than that of the insulating layers 1 between the X- direction and Y-direction line wiring layers 3 and between the power source layers 4 or ground layers 4. Namely, an insulating material 1 provided with an air and a line wiring layers 3 on both faces and an insulating material 1 provided with a power source layer 4 or a ground layer 4 on both faces are composed of ceramics, etc., whose main component is mullite. As this result, the magnetic fields between the line wiring layers 3 and power source layers 4 or ground layers 4 are hardly generated, and the transmission of electric signals is not interfered. In this way, it becomes possible to transmit electric signals quickly.
    • 86. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH03105954A
    • 1991-05-02
    • JP24219189
    • 1989-09-20
    • HITACHI LTD
    • OKAMOTO MASAHIDEYAMADA KAZUJISOGA TASAOTANAKA AKIRAUSHIFUSA NOBUYUKI
    • H01L23/36H01L23/12H01L23/32
    • PURPOSE:To mount, with good reliability, a plurality of semiconductor elements having different coefficients of thermal expansion on the same module board so as to be adjacent by using a board, for element mounting use, whose coefficient of thermal expansion is intermediate between a coefficient of thermal expansion of the module board and a coefficient of thermal expansion of the discrete elements and which is provided with a gradient of the coefficient of thermal expansion in a thickness direction. CONSTITUTION:A module board 3 is provided with a coefficient of thermal expansion which is intermediate between that of an Si element 1 and that of a GaAs element 2; boards 5 and 6 for element mounting use are provided with a gradient of a coefficient of thermal expansion in a thickness direction. In this semiconductor device, the Si element and the GaAs element whose coefficients of thermal expansion are largely different can be mounted on the same module board so as to be adjacent with good reliability. Thereby, the Si element and the GaAs element can be mounted at high density, and a signal propagation speed can be made by about 1.5 times faster as compared with conventional devices.
    • 88. 发明专利
    • ROTARY ANODE TARGET FOR X-RAY TUBE
    • JPS63174251A
    • 1988-07-18
    • JP485187
    • 1987-01-14
    • HITACHI LTD
    • TANAKA AKIRASHIMADA SATOSHIYASUDA TAKESHIMITSUYOSHI TADAHIKO
    • H01J35/10
    • PURPOSE:To reduce the generated thermal stress and allow higher rotation by providing a circular body made of high-strength high-heat conduction ceramics as a reinforcing member on a target constituted of an electric conductor and an X-ray emitter formed on part of it. CONSTITUTION:A reinforcing member is provided on a maximum stress generating section. For the ceramics 2 constituting this reinforcing member, silicon carbide (SiC) having an average grain size of 2mum and beryllium oxide (BeO) powder having an average grain size of about 0.2mum as sintering agent are mixed with a solvent such as xylene or silicon and granulated, crushed, molded, then filled in a graphite mold and hot-pressed in a vacuum. The sintered body thus obtained is machined into a preset shape and applied with the vacuum- degassing treatment, then rhenium and a rhenium tungsten alloy as an X-ray generating material are plated on the surface of a bevel inclination section 3 by the CVD method or the like. Accordingly, the weight becomes 1/3 or below and the heat capacity becomes 4-5 times as compared with a metal target of the same shape. In addition, the maximum stress generated on the graphite layer is reduced and less ceramics is used as compared with a target fully made of graphite.
    • 89. 发明专利
    • TARGET FOR X-RAY TUBE
    • JPS6355841A
    • 1988-03-10
    • JP19885386
    • 1986-08-27
    • HITACHI LTD
    • SHIMADA SATOSHIMITSUYOSHI TADAHIKOTANAKA AKIRAYASUDA TAKESHINISHIHARA MOTOHISA
    • H01J35/10
    • PURPOSE:To enable to manufacture the target of an x-ray tube of large rotating margin and high reliability in good yield by optimizing the shape of the SiC disk in the target by making the thickness of the SiC disk thicker in the central portion and thinner in the peripheral portion so as to reduce the stress generated in the SiC disk. CONSTITUTION:The SiC disk 3, a material of high mechanical strength in high temperature, in a target is formed conically so as the cross section of which lies along the isothermal curves indicated with broken lines, and arranged so as the temperature difference in the SiC disk 3 is minimized. This inclination angle is almost equal to the angle formed on the upper peripheral tilted portion of the graphite 2, 2', and is compatible with the result estimated from the flow of heat inputted to the target. In order to reduce the temperature difference in the SiC disk 3 the thinner the thickness the better, but if the thickness is too thin the centrifugal stress becomes greater than the thermal stress, so it is designed with trade-off of the both stresses. By this configuration of the SiC disk whose mechanical strength is not degraded even in high temperature, the insufficiency of the strength of the graphite bonded to the SiC disk can be supplemented.