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    • 82. 发明专利
    • INSPECTING APPARATUS
    • JPS6329537A
    • 1988-02-08
    • JP17154586
    • 1986-07-23
    • HITACHI LTD
    • TANABE YOSHIKAZU
    • H01L21/66G01N21/88G01N21/94G01N21/956
    • PURPOSE:To perform visual inspection of a material to be inspected and the like efficiently, when foreign materials are hard to make clear in visual observation in light of infrared region from a semiconductor laser using first inspection light, by detecting the position of the foreign material in the visual field quickly and positively by the irradiation of second inspection light in a visible region. CONSTITUTION:A plurality of first inspection light beams, which scan the surface of a material to be inspected 2 and automatically inspect the surface, are emitted from a plurality of first light sources. A second inspection light beam 15 in a visible region is emitted from a second light source to the specified part of the material to be inspected 2. The positions of foreign materials and the like on the surface of the material to be inspected 2 are automatically inspected by the scanning of the first inspection light beams 5 and 6. Thereafter, the individual foreign material is visually observed. At this time, the second inspection light beam 15 in the visual region is emitted. Thus the position of the foreign material in the visual field in the visual observation can be quickly made clear. Therefore, the position of the defects such as the foreign material in the visual field, which is hard to specify in the projected lighting such as the first inspection light beams and white light 11, can be efficiently observed.
    • 83. 发明专利
    • INSPECTION APPARATUS
    • JPS6293636A
    • 1987-04-30
    • JP23329585
    • 1985-10-21
    • HITACHI LTDHITACHI ELECTR ENG
    • TAKEHANA YOICHITANABE YOSHIKAZUKAMIYAMA KAZUMI
    • G01N21/88G01N21/94G01N21/956H01L21/66
    • PURPOSE:To make it possible to reduce noise generated by the unevenness of an article to be inspected itself, by interposing a spectroscopic means permitting the transmission of light in a predetermined wavelength region to one of the light paths of a light source side optical system and a detection optical system. CONSTITUTION:A wafer 2 is scanned in an X-direction by inspection light 7 from a light source 5 and a galvanic mirror 4 and an XY table 1 is continuously moved to a Y-direction. The inspection light 7 is irregularly reflected by the foreign matter adhered to the surface of the wafer 2 to generate scattering light 12 which is, in turn, detected by a photomultiplier tube 11 and a control part 15 grasps the adhesion position of the foreign matter from the X-direction and the Y-direction at that time to output the same to a display part 16. At this time, a band-pass filter 8 is provided to the light path of inspection light 7 and, because the wavelength region of the inspection light 7 is set so as to coincide with the absorption wavelength region of a substance constituting the surface of the wafer 2, the quantity of scattering light 12 generated by the unevenness of the substrate part of the wafer 2 is reduced.
    • 84. 发明专利
    • INSPECTING APPARATUS
    • JPS6269528A
    • 1987-03-30
    • JP20865385
    • 1985-09-24
    • HITACHI LTD
    • ISHIKAWA KATSUHIKOTANABE YOSHIKAZUTAKAMOTO KENJI
    • G01B15/00G01B11/00G01N23/225G01R31/302H01L21/66
    • PURPOSE:To specify an intended inspecting part of a material to be inspected by optical systems quickly, by providing a plurality of optical systems, which are in parallel with the axis of an electron-optical system, have the optical axes, whose distances from the axis of the electron-optical system are the integer times of the specified value, and have the different magnifications. CONSTITUTION:The axis of an electron-optical system E is provided at the distance of the integer times of the arranging pitches of a plurality of semiconductor elements, which are regularly formed on a wafer 2, with respect to the optical axes of optical microscopes M1, M2 and M3. The axis of the system E is set for the intended part to be inspected. Observation through the optical system E is started. An image, which is equal to the magnification of the optical system E, is selected among the microscopes M1, M2 and M3 in a switching part 11 based on the data of the magnification of the optical system E in a signal processing part 8. A control part 9 alternately displays the images, which are obtained from the optical system E or the microscopes M1, M2 and M3 on a display part 10, and the specified inspection is performed.
    • 85. 发明专利
    • DIMENSION MEASURING INSTRUMENT
    • JPS6219706A
    • 1987-01-28
    • JP15815285
    • 1985-07-19
    • HITACHI LTD
    • TANABE YOSHIKAZUISHIKAWA KATSUHIKOTAKAMOTO KENJI
    • G01B15/00G01B15/02H01L21/66
    • PURPOSE:To measure dimensions accurately by changing over a scanning direction of an electron beam according to a direction of a pattern to be measured. CONSTITUTION:An electron generated with an electron generating part 1 is irradiated in the direction of a semiconductor wafer 5 on a sample stand 6 from an electron gun 3 and on that occasion, the electron is brought out and accelerated with an electrode 4 and deflected with deflecting coils X and Y, and the like. The electron beam irradiated on a circuit pattern of the wafer 5 is detected 7. The detected signal is converted into a digital signal with a control part 8 and converted into an analog signal after the necessary signal processing is performed and sent to an image memory 9 and displayed on a CRT 10 as an image. Here, the displayed circuit pattern 5 is observed and the symmetry of the pattern in a prescribed measured part is discovered and it is detected whether or not a pattern edge is measured clearly. At this time, since the pattern edge is symmetrized, the scanning direction of the electron beam is decided and the optimum scanning direction of the electron beam is detected by changing over a changeover switch mechanism automatically and the accurate dimensions are measured.
    • 86. 发明专利
    • CLEAN ROOM
    • JPS60218546A
    • 1985-11-01
    • JP7285084
    • 1984-04-13
    • HITACHI LTDHITACHI KENSETSU SEKKEI KK
    • TANABE YOSHIKAZUISHIKAWA KATSUHIKOSAITOU ARATA
    • F24F7/06F24F3/16H01L21/02
    • PURPOSE:To make changing of working clothes unnecessary in case of movement between clean rooms of respective floors and reduce the space of clean rooms by a constitution wherein stairs, connecting respective clean rooms of a plurality of floors, are made by the structure of air shower. CONSTITUTION:Clean air flows through respective supplying paths 19 by connecting them to a clean air unit 23 provided at the upper part of a building 2 and is blown off downward from air nozzles 22 to flow it through the staires, thereafter, is sucked into return paths 18 to flow it through a return collective path 21. According to this constitution, the space of the stairs 4 is constituted so as to be the air shower as a whole. In case workers move between individual clean rooms of respective floors, they can move through the stairs 4 under wearing dust-proofing clothes without changing their clothes and working efficiency may be improved. Further, it is not necessary to provide air showers individually in the individual clean rooms 3 of respective floors, therefore, it may become favorable with regard to space.
    • 90. 发明专利
    • Device for measuring film thickness
    • 用于测量薄膜厚度的装置
    • JPS59192904A
    • 1984-11-01
    • JP6544683
    • 1983-04-15
    • Hitachi Ltd
    • SASABE SHIYUNJITANABE YOSHIKAZU
    • G01B11/06H01L21/205H01L21/66
    • G01B11/0616
    • PURPOSE:To improve an SN ratio and the measurement precision of film thickness by projecting light from a polarized laser light source upon a film to be measured through a beam splitter and an lambda/4 plate, and detecting interference reflected light by a sensor through a linear polarizing plate. CONSTITUTION:P Polarized light projected by the polarized laser oscillator 14 illuminates an SiO2 film 8 on the surface of a semiconductor wafer 5 through the polarized beam splitter (PBS)15, reflecting mirror 13, view spot glass 12, and lambda/4 plate 11. The interference reflected light travels backward and is reflected by the PBS15 and then detected by the photosensor 18 through the linear polarizing plate 16 and an interference filter 17. Its detection output is processed by a microcomputer 21 through an amplifier 19 and an AD converter 20 to calculate the film thickness. Noise light reflected by the PBS15 and view spot glass 12 is cut off by the linear polarizing plate 16 and the spectrum width is restricted by the interference filter 17, so the SN ratio is improved and the measurement precision of the film thickness is also improved.
    • 目的:通过将来自偏振激光光源的光投射到通过分束器和λ/ 4板测量的膜上,通过传感器检测干涉反射光,来提高SN比和测量精度 线偏振片。 构成:P由偏振激光振荡器14投影的偏振光通过偏振分束器(PBS)15,反射镜13,视点玻璃12和λ/ 4板11照射半导体晶片5的表面上的SiO 2膜8 干涉反射光向后行进并被PBS15反射,然后由光电传感器18通过线性偏振板16和干涉滤光器17检测。其检测输出由微型计算机21通过放大器19和AD转换器20 以计算膜厚度。 由PBS15和观察点玻璃12反射的噪声光被线偏振片16切断,光谱宽度受到干涉滤光器17的限制,因此提高了SN比,并提高了膜厚的测量精度。