专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明专利

JPS6021017A OPTICAL SYSTEM OF SCANNING PHOTON MICROSCOPE 失效
公开(公告)号：JPS6021017A
公开(公告)日：1985-02-02
申请号：JP12767183
申请日：1983-07-15
申请人： HITACHI LTD
发明人： KONAME KANJI , ITOU YOSHITOSHI , MUNAKATA TADASUKE
IPC分类号： G02B13/16 , G02B21/00 , G02B27/00
摘要： PURPOSE:To prevent resolution at the peripheral part of a picture from reduction by increasing the thickness of a transparent electrode arranged on a sample inside the surface intersecting with the optical axis of a lens system opposed to the transparent electrode at right angles in accordance with a distance from the optical axis to correct the aberration of curve on the image surface of the lens system. CONSTITUTION:The glass plate 3 provided with the transparent electrode 4 arranged on the sample 5 supported by a supporting board 6 is curved at its lens 2 side. The shape of the curved surface of the glass plate 3 is set up so that the aberration of curve on the image surface which is formed by a lens 2 can be corrected. A bright point in a point A on the optical axis of a light source 1 is formed at its image on a point A' on the surface of the sample 5 and a bright point in a point B separated from the optical axis is also formed at its image in a point B' on the surface of the sample 5, so that the resolution at the peripheral part of the picture is prevented from reduction.

82. 发明专利

JPS58193426A Light detector 失效
标题翻译：光探测器
公开(公告)号：JPS58193426A
公开(公告)日：1983-11-11
申请号：JP7524882
申请日：1982-05-07
申请人： Hitachi Ltd
发明人： ITOU YOSHITOSHI , HASE SHINOBU , MUNAKATA TADASUKE
IPC分类号： G01J1/02 , G01J1/04
CPC分类号： G01J1/04 , G01J1/0403 , G01J1/0425 , G01J1/0451
摘要： PURPOSE:To obtain the accurate output proportional to the amount of received light when the light is received by a plurality of light guides, by expanding the light received by the light guides to the entire surface of a photoelectric plane of a photoelectric multiplier tube and inputting the light in the tube. CONSTITUTION:The light reflected by a sample is received by a plurality of light guides 4-7, and transmitted to a photoelectric multiplier tube 8. For this purpose, a holder 11 supports the light guides 4-7 so that the end surfaces of the light guides 4-7 are located at the points separated from the central part of the photoelectric plane of the photoelectric multiplier tube 8 by an equal distance R. The distance R is determined in such a way that the light emitted from the light guides 4-7 is expanded to the approximately entire surface of the photoelectric plane of the photoelectric multiplier tube 8.
摘要翻译：目的：为了获得与多个光导所接收的光的接收光量成比例的精确输出，通过将光导所接收的光扩大到光电倍增管的光电面的整个表面，并输入光管在管中。构成：由样品反射的光被多个光导4-7接收，并传输到光电倍增管8.为此，保持器11支撑光导4-7，使得光导4-7位于与光电倍增管8的光电面的中心部分相隔相等距离的位置处。距离R以这样的方式确定：从光导4- 7扩展到光电倍增管8的光电面的大致整个表面。

83. 发明专利

JPS58192341A Testing device for defect of pattern 失效
标题翻译：用于图案缺陷的测试装置
公开(公告)号：JPS58192341A
公开(公告)日：1983-11-09
申请号：JP7524782
申请日：1982-05-07
申请人： Hitachi Ltd
发明人： MUNAKATA TADASUKE , SUDA TADASHI , HASE SHINOBU , KONAME KANJI , NAGATOMO HIROTO
IPC分类号： G01B11/24 , G01B11/245 , H01L21/66
CPC分类号： H01L22/00
摘要： PURPOSE:To display a defect image to a picture surface by modulating the brightness of a CRT by a detecting signal of reflection diffraction beams from the defect section of the pattern and synchronizing beams for a picture with scan light-beams. CONSTITUTION:A sample 4 is scanned by laser beams 1, and outputs from diffraction beam detectors 8, 8' arranged in the directions of (2n+1)X22.5 deg. are added 9, amplified 25 and recognized made correspond to a position on the sample as a defect signal in a signal processing system (an electronic calculator) 17. A positional information is decided by the information transfer for the processing system 17 and a drive control section. The defect signal is given to the CRT 23. Reflected beams 30 are detected 20 and used as a second signal in order to grasp the correlation of a normal pattern and the defect, and diffraction beams from the fringe of the normal pattern are detected by eight detectors 26, 26' arranged in the directions of nX45 deg., and outputs are added 27, amplified 28 and used as a scan brightness modulation signal. Second and third signals are selected 21 and used. According to said constitution, the signal by higher diffraction beams is added to the signal of lower diffraction beams (reflected) while being emphasized and a sharp picture is obtained, and the defect is easily extracted.
摘要翻译：目的：通过从图案的缺陷部分的反射衍射光束的检测信号和扫描光束的图像的同步光束来调制CRT的亮度来向图像表面显示缺陷图像。构成：样品4由激光束1扫描，并从沿（2n + 1）×22.5度方向排列的衍射光束检测器8,8'输出。被加上9，被识别的信号与信号处理系统（电子计算器）17中的缺陷信号对应于样本上的位置。位置信息由处理系统17的信息传送和驱动控制部分。将缺陷信号提供给CRT 23.检测反射光束20并将其用作第二信号，以便掌握正常图案与缺陷的相关性，并且通过八次检测来自正常图案的边缘的衍射光束检测器26,26'设置在n×45度的方向上，并且输出被加上27，放大28并用作扫描亮度调制信号。选择第二和第三信号21并使用。根据上述结构，在被强调的同时，通过高衍射光束的信号被加到较低衍射光束（反射）的信号上，并且获得清晰的图像，并且容易地提取缺陷。

84. 发明专利

JPS58192339A Inspecting device for defect of pattern 失效
标题翻译：检查图案缺陷检测装置
公开(公告)号：JPS58192339A
公开(公告)日：1983-11-09
申请号：JP7524582
申请日：1982-05-07
申请人： Hitachi Ltd
发明人： MUNAKATA TADASUKE , KONAME KANJI , HASE SHINOBU , ITOU YOSHITOSHI , SHIDA HIROYUKI
IPC分类号： G01B11/24 , G01B11/245 , H01L21/66
CPC分类号： H01L22/00
摘要： PURPOSE:To extract a defect signal without being disturbed by a false defect signal by removing a detecting signal based on the reflection diffraction beams from a circular pattern on a sample surface by self-decision. CONSTITUTION:Photodetectors 18a-18d are fitted in the directions of (2n+1)X 45 deg. and outputs are synthesized 20 and amplified and a signal Sn(45) is formed, photodetectors 19a-19d are fitted in directions of 2nX45 deg. and outputs are added 22 and amplified 23 and a signal Sn(90) is formed, and a signal from normal pattern is obtained. Detectors 8a-8e for the diffraction beams of a defect section are fitted in the directions of (2n+1)X22.5 deg. and outputs are added 9 and amplified 10 and a signal Sd is formed. A diffraction signal 16' from the crystal grains 13 of the circular patterns and a defect signal 15'' from patterns 12 are made contain in the signal Sn(45), but the signal 15'' is smaller than a signal 15' in Sd in the patterns normally used. When a level is adjusted properly and a signal Sd-Sn(45) is obtained, only a signal 15''' corresponding to a defect remains, and only a desired defect signal can be drawn correctly from the circular patterns similar to the defect.
摘要翻译：目的：通过自我判断，通过从样品表面上的圆形图案中去除基于反射衍射光束的检测信号，提取缺陷信号而不被伪缺陷信号干扰。构成：光电检测器18a-18d沿（2n + 1）×45度的方向嵌合。并合成输出20并放大并形成信号Sn（45），光电检测器19a-19d沿2nX45°的方向嵌合。并加上输出22并放大23，形成信号Sn（90），得到正常图案的信号。用于缺陷部分的衍射光束的检测器8a-8e沿（2n + 1）×22.5度的方向拟合。并输出9并放大10，形成信号Sd。来自圆形图案的晶粒13的衍射信号16'和来自图案12的缺陷信号15“被包含在信号Sn（45）中，但是信号15”比Sd中的信号15'小在通常使用的图案中。当正确地调整电平并且获得信号Sd-Sn（45）时，仅保留与缺陷相对应的信号15“'，并且可以从类似于缺陷的圆形图案中正确地绘制期望的缺陷信号。

85. 发明专利

JPS58155732A MEASURING DEVICE FOR LIFE OF CARRIER 失效
公开(公告)号：JPS58155732A
公开(公告)日：1983-09-16
申请号：JP3801482
申请日：1982-03-12
申请人： HITACHI LTD
发明人： HONMA NORIAKI , MUNAKATA TADASUKE
IPC分类号： G01R31/26 , H01L21/66
摘要： PURPOSE:To enable to measure the life of carrier on the depletion layer of a P-N junction in a non-contacting and non-destructive manner by a method wherein a modulation beam of light is irradiated on a semiconductor material, and a cut-off frequency of optical voltage generated on the semiconductor material is found. CONSTITUTION:A wafer sample 2 having a P-N junction is placed on a metal sample stand 1 which is combindly used as an electrode. On the other hand, an LED light source 7 is modulated by a sweep oscillator 8 and an LED driving circuit 9, and pulse light of frequency f is irradiated. The light radiated from the LED7 is condensed on a sample 3, the optical voltage generated on the sample 3 is detected by a phase detection type amplifier 10, and the frequency of the optical voltage is measured. The output of the amplifier 10 is connected to a 3dB dropping voltage detecting circuit 11, and the sweep of a frequency sweep oscillator 8 is stopped at the point where said output dropped by 3dB. At the same time, a gate circuit 11' is opened, the frequency at that time is converted to a digital signal by an A/D converter 12, and the signal is inputted to a microcomputer 14. An arithmetic operation is performed by the computer 14, and the value of the carrier life is found.

86. 发明专利

JPS5814618B2 失效
公开(公告)号：JPS5814618B2
公开(公告)日：1983-03-19
申请号：JP7083375
申请日：1975-06-13
申请人： HITACHI LTD
发明人： SAITO NORIO , MUNAKATA TADASUKE
IPC分类号： G01T1/29 , G01B7/12 , G01B11/08 , G01N23/00 , G01T1/00 , H01L21/027

87. 发明专利

JPS56155543A MEASURING DEVICE FOR SEMICONDUCTOR CHARACTERISTIC 失效
公开(公告)号：JPS56155543A
公开(公告)日：1981-12-01
申请号：JP5179381
申请日：1981-04-08
申请人： HITACHI LTD
发明人： MUNAKATA TADASUKE , YAGI KUNIHIRO , MOTOOKA TERUAKI
IPC分类号： G01R31/26 , G01N21/956 , H01L21/66
摘要： PURPOSE:To judge the distribution of characteristics of a sample by a method wherein the electrode havng a transparent side is installed on both sides of a semiconductor sample maintaining intervals, the surface of the sample is scanned by a thin photon beam which was made into a pluse through the intermediary of the transparent electrode and the photo electromotive voltage generated between electrodes is measured. CONSTITUTION:The wavelength of the photon beam 20 is adjusted and focused by a filter 18 and a lens 19 respectively using a CRT17 as a luminous source, and is irradiated on the sample. A deflection 16 is performed by an adjusting unit 32 adjusting the voltage of a scanning power source 31. CRT's 26 and 28 to be used for scanning image indication are deflected (27, 29) using the same signal. At the CRT28, the deflection (29) is performed by adding (30) the signal sent from a sample 2 and the image for amplitude modulation is obtained. The sample 2 is held between transparent electrodes 8 and 8', and the information for the density of impurities can be obtained by detecting (21), analyzing and amplifying (22) the transmitted beam 20'. As a result, the factor having the maximum efficiency can be determined without fail amont the relating factors of a Dember voltage. The pulse voltage is also used as the reference voltage for synchronous detection 25 and the SN coefficient of the signal can be improved. Through these procedures, whether the wafer is satisfactorily used to a solid state circuit element or not can be determined easily.

88. 发明专利

JPS56137578A MANUFACTURE FOR RECORDING MEDIUM FOR SEMICONDUCTOR 失效
公开(公告)号：JPS56137578A
公开(公告)日：1981-10-27
申请号：JP3884680
申请日：1980-03-28
申请人： HITACHI LTD
发明人： MUNAKATA TADASUKE
IPC分类号： G11C11/30 , G11C13/04
摘要： PURPOSE:To obtain semiconductor medium for recording which can record with the electron beam and leave no trace in erasing a dead band, by radiating the electron beam to the specified position of dead band formed with the semiconductor substrate with the ion beam. CONSTITUTION:Ion beam 1 is uniformly radiated on the surface of semiconductor substrates 2, 2' to obtain the dead band 5. Next, when electron beam 6 is radiated on the specified position of the dead band 5, the radiated part is instantly heated and annealed. Thus, the part is activated and the activated hole 7 is formed. Since electron is not almost affected by space charges, very fine beam can be formed. Thus, although the hold 7 corresponds to the dead band 5, since the size is considerably smaller than the latter, dense recording is made.

89. 发明专利

JPS56137577A MANUFACTURE FOR SEMICONDUCTOR MEDIUM FOR RECORDING 失效
公开(公告)号：JPS56137577A
公开(公告)日：1981-10-27
申请号：JP3884580
申请日：1980-03-28
申请人： HITACHI LTD
发明人： MUNAKATA TADASUKE
IPC分类号： G11C17/00 , G11C11/30 , G11C13/04
摘要： PURPOSE:To obtain a semiconductor medim for recording enabling a high readout speed, by forming a dead band through the radiation of charged particle rays to the specified position on a semiconductor substrate and recording the information according to the presence of this dead band. CONSTITUTION:The semiconductor substrate 2 is single conduction type, has not junction, and electrodes 8'' and 8''' are fitted to the both sides of the substrate front. When a current is fed through the bias resistor 9 from the bias power supply 7 via the electrodes 8'' and 8''', the change in the electric conductivity in the semiconductor substrate 2 by the radiation of electron rays is read out at the amplifier 10. In forming dead bands 5, 5', the beam having the intensity of 1/10 -1/10 A of Ar ions accelerated by 60kV is used. By the ion beam like this, the spot diameter of 0.1mum can be obtained, allowing to achieve the recording with high density.

90. 发明专利

JPS5396679A ELECTRONNBEAM DRAWING EQUIPMENT 失效
公开(公告)号：JPS5396679A
公开(公告)日：1978-08-24
申请号：JP1070877
申请日：1977-02-04
申请人： HITACHI LTD
发明人： KURODA KATSUHIRO , MUNAKATA TADASUKE , MIWA ICHIROU , ASAI SHIYOUJIROU , YANAGISAWA AKIRA , OZASA SUSUMU , MATSUOKA GENYA
IPC分类号： H01L21/027 , H01L21/26
摘要： PURPOSE:To obtain the electron-beam drawing equipment which makes high-speed drawing possible and has its controlling software simplified and its control system also simplified.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式