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    • 81. 发明授权
    • Delay circuit and delay synchronization loop device
    • 延迟电路和延迟同步环路装置
    • US07135906B2
    • 2006-11-14
    • US10901220
    • 2004-07-29
    • Yasuhiro TakaiShotaro Kobayashi
    • Yasuhiro TakaiShotaro Kobayashi
    • H03H11/26
    • H03K5/133H03K5/135H03K2005/00058H03K2005/00241H03K2005/00247H03K2005/00273H03L7/0814H03L7/087
    • A delay circuit includes a first delay line circuit having a plurality of stages of delay units, a second delay line circuit having a plurality of stages of delay units, a plurality of transfer circuits provided in association with respective stages of the delay units of the first delay line circuit, the transfer circuits controlling the transfer of the outputs of the delay units of the first delay line circuit to associated stages of the delay units of the second delay line circuit. The delay units of respective stages of the first delay line circuit inverting input signals. Each stage delay unit of the second delay line circuit includes a logic circuit receiving an output signal of the transfer circuit associated with the delay unit in question and an output signal of a preceding stage to send an output signal to a following stage. The duty ratio is rendered variable by independently selecting the rising edge of the input signal and a propagation path of the falling edge.
    • 延迟电路包括具有多级延迟单元的第一延迟线电路,具有多级延迟单元的第二延迟线电路,与第一延迟单元的延迟单元的相应级相关联地设置的多个传输电路 延迟线电路,所述传送电路控制第一延迟线电路的延迟单元的输出到第二延迟线电路的延迟单元的相关级的传送。 第一延迟线电路各级的延迟单元反相输入信号。 第二延迟线电路的各级延迟单元包括接收与所讨论的延迟单元相关联的传送电路的输出信号的逻辑电路和将前一级的输出信号发送到后级的输出信号。 通过独立地选择输入信号的上升沿和下降沿的传播路径,使占空比变化。
    • 82. 发明授权
    • Image forming apparatus
    • 图像形成装置
    • US07071960B2
    • 2006-07-04
    • US10808330
    • 2004-03-25
    • Kiyoshi ToizumiTaisuke KamimuraToshimitsu GotohTsutomu YoshimotoYasuhiro Takai
    • Kiyoshi ToizumiTaisuke KamimuraToshimitsu GotohTsutomu YoshimotoYasuhiro Takai
    • G03G15/24G03G15/045G03G15/047G03G15/05
    • G03G15/05
    • Electron generating devices and LED arrays are arranged in a surrounding area of a photosensitive drum. The electron generating devices are located downstream of a cleaner and upstream of a developing unit with respect to a turning direction of the photosensitive drum with a specific gap between the electron generating devices and a surface of the photosensitive drum. The LED arrays are disposed against outer ends of the electron generating devices opposite to inner ends thereof facing the photosensitive drum. When activated by a driving circuit according to image information, individual LED elements of the LED arrays emit light, causing the electron generating devices to emit electrons in a pattern corresponding to the image information. The electrons emitted from the electron generating devices produce more electrons due to an electron avalanche phenomenon before reaching the photosensitive drum, eventually forming an electrostatic latent image on the surface of the photosensitive drum.
    • 电子发生器件和LED阵列布置在感光鼓的周围区域中。 电子产生装置相对于感光鼓的转动方向位于清洁器的下游和显影单元的上游,在电子产生装置和感光鼓的表面之间具有特定的间隙。 LED阵列设置在电子产生装置的与端对着感光鼓的内端相对的外端。 当根据图像信息被驱动电路激活时,LED阵列的各个LED元件发光,使得电子发生器件以对应于图像信息的图案发射电子。 从电子产生装置发射的电子在到达感光鼓之前由于电子雪崩现象而产生更多的电子,最终在感光鼓的表面上形成静电潜像。
    • 84. 发明授权
    • Interpolating circuit, DLL circuit and semiconductor integrated circuit
    • 内插电路,DLL电路和半导体集成电路
    • US06674314B2
    • 2004-01-06
    • US10241986
    • 2002-09-12
    • Yasuhiro Takai
    • Yasuhiro Takai
    • H03L706
    • H03K5/131H03K5/133H03K5/15046H03L7/0814H03L7/089
    • Disclosed is an interpolating circuit for producing an output signal having a delay time corresponding to a value obtained by performing interior division of a phase difference between entered first and second signals by a preset interior division ratio. The interpolating circuit includes a waveform synthesis unit and a bias control unit. The waveform synthesis unit includes an OR gate, which receives the first and second signals, for outputting the logic OR between these two signals; a first switch element inserted between a node, which is connected to an output terminal, and a first power supply and turned on and off by the output signal of the OR gate; a series circuit comprising a first constant-current source and a second switch element turned on and off by the first signal; and a series circuit comprising a second constant-current source and a third switch element turned on and off by the second signal; the series circuits being connected in parallel between the output node and a second power supply. On the basis of control signals that decide the interior division ratio, the bias control unit performs control in such a manner that current-path switches are turned on and off so that first and second current values, which are the totals of current values, will flow into the first and second constant-current sources, respectively.
    • 公开了一种用于产生输出信号的内插电路,该输出信号的延迟时间对应于通过以预设的内部分频比执行输入的第一和第二信号之间的相位差的内部分割所获得的值。 内插电路包括波形合成单元和偏置控制单元。 波形合成单元包括或门,其接收第一和第二信号,以输出这两个信号之间的逻辑或; 第一开关元件,其插入在连接到输出端子的节点和第一电源之间,并且由OR门的输出信号导通和截止; 串联电路,包括由第一信号导通和断开的第一恒流源和第二开关元件; 以及包括由所述第二信号导通和断开的第二恒流源和第三开关元件的串联电路; 串联电路并联连接在输出节点和第二电源之间。 基于决定内部分频比的控制信号,偏置控制单元以电流路径开关导通和截止的方式执行控制,使得作为当前值的总和的第一和第二电流值将 分别流入第一和第二恒定电流源。
    • 86. 发明授权
    • Synchronous semiconductor memory device with low power consumption
    • 具有低功耗的同步半导体存储器件
    • US5608686A
    • 1997-03-04
    • US512420
    • 1995-08-08
    • Yasuhiro Takai
    • Yasuhiro Takai
    • G11C11/401G11C7/10G11C11/407G11C11/408G11C8/00
    • G11C7/1006
    • A synchronous semiconductor memory device has an M-bit I/O configuration memory device mode and an M.times.2.sup.k -bit I/O configuration memory device mode. In the former mode, n bits whose transition frequencies are smaller are selected from an m-bit internal address and are used to access a memory section, while the other k (=m-n) bits whose transition frequencies are larger are selected from the m-bit internal address to select one of 2.sup.k groups of internal data lines of the memory section and connect them to some of data input/output pins. In the latter mode, n bits whose transition frequencies are larger are selected from the m-bit internal address and are used to access the memory section, while the 2.sup.k groups of the data lines are connected to all the data input/output pins.
    • 同步半导体存储器件具有M位I / O配置存储器件模式和Mx2k位I / O配置存储器件模式。 在前一种模式中,从m位内部地址中选择转移频率较小的n位,并且用于访问存储器部分,而从m位选择转移频率较大的其他k(= mn)位, 位内部地址选择存储器部分的2k组内部数据线之一,并将其​​连接到某些数据输入/输出引脚。 在后一种模式中,从m位内部地址中选择n个过渡频率较大的位,用于访问存储器部分,而2k组数据线连接到所有数据输入/输出引脚。
    • 90. 发明授权
    • Voltage controlled oscillator
    • 压控振荡器
    • US07719370B2
    • 2010-05-18
    • US12031809
    • 2008-02-15
    • Yasuhiro Takai
    • Yasuhiro Takai
    • H03K3/03
    • H03K3/0322H03K5/133H03L7/0995
    • A voltage controlled oscillator that is a differential ring oscillator type voltage controlled oscillator that, by connecting in cascade differential delay elements to which differential clock signals of a mutually reverse phase are input and controlling the current that flows to the differential delay elements by a bias voltage, controls a delay amount of this differential clock signal, having a phase detection portion that outputs a detection signal by comparing an output voltage of the differential output of any differential delay element and a reference voltage that is set to a voltage that detects an abnormal operation, and a cross-coupled circuit that is provided at each of the differential delay elements and, when the detection signal is input, amplifies the potential difference between the pair of differential output terminals.
    • 一种压控振荡器,其是差分环形振荡器型压控振荡器,其通过连接到级联差分延迟元件中,相位反相的差分时钟信号被输入到差分延迟元件中,并且通过偏置电压来控制流向差分延迟元件的电流 控制该差分时钟信号的延迟量,具有相位检测部分,该相位检测部分通过比较任何差分延迟元件的差分输出的输出电压和设置为检测异常运算的电压的参考电压来输出检测信号 以及设置在每个差分延迟元件处的交叉耦合电路,并且当输入检测信号时,放大该对差分输出端子之间的电位差。