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1. 发明授权

US07750712B2 Timing control circuit, timing generation system, timing control method and semiconductor memory device 有权
标题翻译：定时控制电路，定时生成系统，定时控制方法和半导体存储器件
公开(公告)号：US07750712B2
公开(公告)日：2010-07-06
申请号：US12314207
申请日：2008-12-05
申请人： Akira Ide , Yasuhiro Takai , Akira Kotabe , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama
发明人： Akira Ide , Yasuhiro Takai , Akira Kotabe , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama
IPC分类号： H03H11/26
CPC分类号： G11C11/4076 , G11C7/04 , G11C7/1072 , G11C7/222 , G11C19/00 , H03K5/131 , H03K5/14 , H03K2005/00058 , H03K2005/00241
摘要： A timing control circuit DLY1 receives clock signal CKa with period T1 and activation signal ACT and outputs fine timing signal FT with delay of m*T1+tda measured from the clock signal where m denotes a non-negative integer and tda denotes delay in the analog delay element. The timing control circuit DLY1 comprises a coarse delay circuit CD and a fine delay circuit FD. The coarse delay circuit CD comprises a counter for counting a rising edge of the clock signal CKa after receiving activation signal ACT and outputs coarse timing signal CT with delay of m*T1 measured from a rising edge of the clock signal CKa. The fine delay circuit FD comprises a plurality of analog delay elements and outputs fine delay timing signal FT with delay of tda measured from the coarse timing signal CT. Variation in delay of timing signal is reduced.
摘要翻译：定时控制电路DLY1接收具有周期T1和激活信号ACT的时钟信号CKa，并从m表示非负整数的时钟信号输出延迟m * T1 + tda的精确定时信号FT，并且tda表示模拟延迟元件定时控制电路DLY1包括粗延迟电路CD和精细延迟电路FD。粗延迟电路CD包括用于在接收到激活信号ACT之后对时钟信号CKa的上升沿进行计数的计数器，并输出从时钟信号CKa的上升沿测量的具有延迟m * T1的粗定时信号CT。精细延迟电路FD包括多个模拟延迟元件，并输出从粗定时信号CT测得的具有延迟tda的精细延迟定时信号FT。定时信号延迟的变化减小。

2. 发明申请

US20090146716A1 Timing control circuit, timing generation system, timing control method and semiconductor memory device 有权
标题翻译：定时控制电路，定时生成系统，定时控制方法和半导体存储器件
公开(公告)号：US20090146716A1
公开(公告)日：2009-06-11
申请号：US12314207
申请日：2008-12-05
申请人： Akira Ide , Yasuhiro Takai , Akira Kotabe , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama
发明人： Akira Ide , Yasuhiro Takai , Akira Kotabe , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama
IPC分类号： H03H11/26
CPC分类号： G11C11/4076 , G11C7/04 , G11C7/1072 , G11C7/222 , G11C19/00 , H03K5/131 , H03K5/14 , H03K2005/00058 , H03K2005/00241
摘要： A timing control circuit DLY1 receives clock signal CKa with period T1 and activation signal ACT and outputs fine timing signal FT with delay of m*T1+tda measured from the clock signal where m denotes a non-negative integer and tda denotes delay in the analog delay element. The timing control circuit DLY1 comprises a coarse delay circuit CD and a fine delay circuit FD. The coarse delay circuit CD comprises a counter for counting a rising edge of the clock signal CKa after receiving activation signal ACT and outputs coarse timing signal CT with delay of m*T1 measured from a rising edge of the clock signal CKa. The fine delay circuit FD comprises a plurality of analog delay elements and outputs fine delay timing signal FT with delay of tda measured from the coarse timing signal CT. Variation in delay of timing signal is reduced.
摘要翻译：定时控制电路DLY1接收具有周期T1和激活信号ACT的时钟信号CKa，并从m表示非负整数的时钟信号输出延迟m * T1 + tda的精确定时信号FT，并且tda表示模拟延迟元件定时控制电路DLY1包括粗延迟电路CD和精细延迟电路FD。粗延迟电路CD包括用于在接收到激活信号ACT之后对时钟信号CKa的上升沿进行计数的计数器，并输出从时钟信号CKa的上升沿测量的具有延迟m * T1的粗定时信号CT。精细延迟电路FD包括多个模拟延迟元件，并输出从粗定时信号CT测得的具有延迟tda的精细延迟定时信号FT。定时信号延迟的变化减小。

3. 发明授权

US07973582B2 Timing control circuit and semiconductor storage device 有权
标题翻译：定时控制电路和半导体存储设备
公开(公告)号：US07973582B2
公开(公告)日：2011-07-05
申请号：US12205668
申请日：2008-09-05
申请人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
发明人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
IPC分类号： H03H11/26
CPC分类号： H03K5/15033
摘要： Disclosed is a timing control circuit which receives a first clock having a period T1 and a group of second clocks of L different phases (where L is a positive integer) spaced apart from each other at substantially equal intervals and which generates a fine timing signal delayed from the rising edge of the first clock by a delay td of approximately td=m·T1+n·(T2/L), where m and n are non-negative integers. The timing control circuit has a coarse delay circuit and a fine delay circuit. The coarse delay circuit counts the rising edges of the first clock after an activate signal is activated and generates a coarse timing signal delayed from the first clock by approximately m·T1. The fine delay circuit has a circuit which, after the activate signal is activated, detects a second clock, which has a rising edge that immediately follows the rising edge of the first clock, from among the group of L-phase second clocks. Using the edge-detection information, the fine delay circuit generates a fine timing signal for which the amount of delay from the coarse timing signal is approximately n·(T2/L). The values of m and n can be set by registers.
摘要翻译：公开了一种定时控制电路，其以基本相等的间隔接收具有周期T1和L个不同相位（其中L是正整数）的第二时钟的一组第一时钟，并且产生延迟的精细定时信号从第一时钟的上升沿开始约td = m·T1 + n·（T2 / L）的延迟td，其中m和n是非负整数。定时控制电路具有粗略延迟电路和精细延迟电路。粗略延迟电路在激活信号激活后对第一时钟的上升沿进行计数，并产生从第一个时钟延迟大约m·T1的粗略定时信号。精细延迟电路具有在激活信号被激活之后，从一组L相第二时钟中检测出具有紧跟第一时钟的上升沿的上升沿的第二时钟的电路。利用边缘检测信息，精细延迟电路产生从粗定时信号的延迟量近似为n·（T2 / L）的精细定时信号。 m和n的值可以由寄存器设置。

4. 发明授权

US07903492B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07903492B2
公开(公告)日：2011-03-08
申请号：US12314860
申请日：2008-12-17
申请人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
发明人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
IPC分类号： G11C7/00
CPC分类号： G11C7/22 , G11C7/04 , G11C7/1048 , G11C7/12 , G11C7/20 , G11C7/222 , G11C11/4094 , H01L27/0207 , H01L27/108 , H01L27/10897 , H03K5/15066
摘要： Disclosed is a semiconductor device including a first clock generator that generates a first clock signal having a first period from an input clock signal, a second clock generator that generates a second clock signal having a second period from the input clock signal, and a timing generator that receives the first clock signal, the second clock signal, an activation signal from a command decoder and a selection signal for selecting the delay time from a timing register to produce a timing signal delayed as from activation of the activation signal by a delay equal to a sum of a time equal to a preset number m prescribed by the selection signal times the first period and a time equal to another preset number n prescribed by the selection signal times the second period. The timing register holds the values of m and n. These values are set in the timing register in an initialization sequence at the time of a mode register set command. In the operating states, the timing signals are output from the timing generator at a desired timing based on the information stored in the timing register (FIG. 6).
摘要翻译：公开了一种半导体器件，包括第一时钟发生器，其从输入时钟信号产生具有第一周期的第一时钟信号;第二时钟发生器，其从输入时钟信号产生具有第二周期的第二时钟信号;以及定时发生器其接收第一时钟信号，第二时钟信号，来自命令解码器的激活信号和用于从定时寄存器选择延迟时间的选择信号，以产生从激活信号的激活延迟等于等于由选择信号规定的预定数量m的时间等于第一周期的时间和等于由选择信号规定的另一个预设数量n的时间乘以第二周期的时间之和。定时寄存器保存m和n的值。这些值在模式寄存器设置命令时以初始化顺序设置在定时寄存器中。在操作状态下，基于定时寄存器（图6）中存储的信息，定时信号以定时发生器输出。

5. 发明授权

US07772911B2 Timing control circuit and semiconductor storage device 有权
标题翻译：定时控制电路和半导体存储设备
公开(公告)号：US07772911B2
公开(公告)日：2010-08-10
申请号：US12208978
申请日：2008-09-11
申请人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
发明人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
IPC分类号： G06F1/04
CPC分类号： H03K5/135 , G11C7/04 , G11C7/1072 , G11C7/222 , G11C11/4076 , G11C19/00
摘要： Disclosed is a timing control circuit that receives a first clock having a period T1, a group of second clocks of L different phases spaced apart from each other at substantially equal intervals and selection signals m, n supplied thereto and generates a fine timing signal delayed from the rising edge of the first clock signal by a delay td of approximately td=m·T1+n·(T2/L). The timing control circuit includes a coarse delay circuit and a fine delay circuit. The coarse delay circuit includes a counter for counting a rising edge of the first clock signal after an activate signal is activated and generates a coarse timing signal whose amount of delay from the first clock signal is approximately m·T1. The fine delay circuit comprises L-number of multiphase clock control delay circuits disposed in parallel, delays by n·T2/L the timing of sampling of the coarse timing signal by respective clocks of the group of L-phase second clocks, and takes the OR among the resulting delayed pulses to thereby produce the fine timing signal.
摘要翻译：公开了一种定时控制电路，其接收具有周期T1的第一时钟，以相等间隔彼此间隔开的L个不同相位的一组第二时钟，以及提供给其的选择信号m，n，并产生从第一时钟信号的上升沿大约为td = m·T1 + n·（T2 / L）的延迟td。定时控制电路包括粗延迟电路和精细延迟电路。粗略延迟电路包括用于在激活信号被激活之后对第一时钟信号的上升沿进行计数的计数器，并产生其第一时钟信号的延迟量大约为m·T1的粗略定时信号。精细延迟电路包括L个并联设置的多相时钟控制延迟电路，通过n·T2 / L延迟由L组第二时钟组的相应时钟对粗略定时信号进行采样的定时，或者产生延迟脉冲，从而产生精细定时信号。

6. 发明申请

US20090180341A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090180341A1
公开(公告)日：2009-07-16
申请号：US12314860
申请日：2008-12-17
申请人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
发明人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
IPC分类号： G11C7/00 , H03L7/06 , G11C8/18
CPC分类号： G11C7/22 , G11C7/04 , G11C7/1048 , G11C7/12 , G11C7/20 , G11C7/222 , G11C11/4094 , H01L27/0207 , H01L27/108 , H01L27/10897 , H03K5/15066
摘要： Disclosed is a semiconductor device including a first clock generator that generates a first clock signal having a first period from an input clock signal, a second clock generator that generates a second clock signal having a second period from the input clock signal, and a timing generator that receives the first clock signal, the second clock signal, an activation signal from a command decoder and a selection signal for selecting the delay time from a timing register to produce a timing signal delayed as from activation of the activation signal by a delay equal to a sum of a time equal to a preset number m prescribed by the selection signal times the first period and a time equal to another preset number n prescribed by the selection signal times the second period. The timing register holds the values of m and n. These values are set in the timing register in an initialization sequence at the time of a mode register set command. In the operating states, the timing signals are output from the timing generator at a desired timing based on the information stored in the timing register (FIG. 6).
摘要翻译：公开了一种半导体器件，包括第一时钟发生器，其从输入时钟信号产生具有第一周期的第一时钟信号;第二时钟发生器，其从输入时钟信号产生具有第二周期的第二时钟信号;以及定时发生器其接收第一时钟信号，第二时钟信号，来自命令解码器的激活信号和用于从定时寄存器选择延迟时间的选择信号，以产生从激活信号的激活延迟等于等于由选择信号规定的预定数量m的时间等于第一周期的时间和等于由选择信号规定的另一个预设数量n的时间乘以第二周期的时间之和。定时寄存器保存m和n的值。这些值在模式寄存器设置命令时以初始化顺序设置在定时寄存器中。在操作状态下，基于定时寄存器（图6）中存储的信息，定时信号以定时发生器输出。

7. 发明申请

US20090102524A1 TIMING CONTROL CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：时序控制电路和半导体存储器件
公开(公告)号：US20090102524A1
公开(公告)日：2009-04-23
申请号：US12208978
申请日：2008-09-11
申请人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
发明人： Akira Ide , Yasuhiro Takai , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Hiroaki Nakaya
IPC分类号： H03L7/00
CPC分类号： H03K5/135 , G11C7/04 , G11C7/1072 , G11C7/222 , G11C11/4076 , G11C19/00
摘要： Disclosed is a timing control circuit that receives a first clock having a period T1, a group of second clocks of L different phases spaced apart from each other at substantially equal intervals and selection signals m, n supplied thereto and generates a fine timing signal delayed from the rising edge of the first clock signal by a delay td of approximately td=m·T1+n·(T2/L). The timing control circuit includes a coarse delay circuit and a fine delay circuit. The coarse delay circuit includes a counter for counting a rising edge of the first clock signal after an activate signal is activated and generates a coarse timing signal whose amount of delay from the first clock signal is approximately m·T1. The fine delay circuit comprises L-number of multiphase clock control delay circuits disposed in parallel, delays by n·T2/L the timing of sampling of the coarse timing signal by respective clocks of the group of L-phase second clocks, and takes the OR among the resulting delayed pulses to thereby produce the fine timing signal.
摘要翻译：公开了一种定时控制电路，其接收具有周期T1的第一时钟，以相等间隔彼此间隔开的L个不同相位的一组第二时钟，以及提供给其的选择信号m，n，并产生从第一时钟信号的上升沿大约为td = m.T1 + n。（T2 / L）的延迟td。定时控制电路包括粗延迟电路和精细延迟电路。粗延迟电路包括用于在激活信号被激活之后对第一时钟信号的上升沿进行计数的计数器，并产生其第一时钟信号的延迟量近似为m.T1的粗定时信号。精细延迟电路包括并联设置的L个多相时钟控制延迟电路，延迟n.T2 / L，通过L相第二时钟组的相应时钟对粗略定时信号进行采样的定时，或者产生延迟脉冲，从而产生精细定时信号。

8. 发明授权

US07995405B2 Semiconductor memory device having a sense amplifier circuit with decreased offset 有权
公开(公告)号：US07995405B2
公开(公告)日：2011-08-09
申请号：US12967728
申请日：2010-12-14
申请人： Satoru Akiyama , Tomonori Sekiguchi , Riichiro Takemura , Hiroaki Nakaya , Shinichi Miyatake , Yuko Watanabe
发明人： Satoru Akiyama , Tomonori Sekiguchi , Riichiro Takemura , Hiroaki Nakaya , Shinichi Miyatake , Yuko Watanabe
IPC分类号： G11C7/06
CPC分类号： G11C11/4091 , H01L27/10897
摘要： A semiconductor memory device having high integration, low power consumption and high operation speed. The memory device includes a sense amplifier circuit having plural pull-down circuits and a pull-up circuit. A transistor constituting one of the plural pull-down circuits has a larger constant than that of a transistor constituting the other pull-down circuits, for example, a channel length and a channel width. The pull-down circuit having the larger constant transistor is activated earlier than the other pull-down circuits and the pull-up circuit, which are activated to conduct reading. The data line and the earlier driven pull-down circuit are connected by an NMOS transistor and the NMOS transistor is activated or inactivated to control the activation or inactivation of the pull-down circuit.

9. 发明授权

US07603592B2 Semiconductor device having a sense amplifier array with adjacent ECC 有权
标题翻译：具有具有相邻ECC的读出放大器阵列的半导体器件
公开(公告)号：US07603592B2
公开(公告)日：2009-10-13
申请号：US11495550
申请日：2006-07-31
申请人： Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Satoru Hanzawa , Kazuhiko Kajigaya
发明人： Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Satoru Hanzawa , Kazuhiko Kajigaya
IPC分类号： G11C29/00
CPC分类号： G06F11/1044 , G11C2029/0409
摘要： A semiconductor memory device capable of achieving a sufficient operating margin without increasing an area penalty even in the case of miniaturization is provided. An error correction system composed of a data bit of 64 bits and a check bit of 9 bits is introduced to a memory array such as DRAM, and an error correction code circuit required therein is disposed near a sense amplifier array. In addition to normal memory arrays composed of such memory arrays, a redundant memory array having a sense amplifier array and an error correction code circuit adjacent thereto is provided in a chip. By this means, the error which occurs in the manufacture can be replaced. Also, the error correction code circuit corrects the error at the time of an activate command and stores the check bit at the time of a pre-charge command.
摘要翻译：提供了即使在小型化的情况下也能够实现足够的操作余量而不增加面积损失的半导体存储器件。将由64位的数据位和9位的校验位构成的纠错系统引入到诸如DRAM的存储器阵列中，并且其中需要的纠错码电路设置在读出放大器阵列附近。除了由这种存储器阵列组成的常规存储器阵列之外，在芯片中提供了具有读出放大器阵列和与其相邻的纠错码电路的冗余存储器阵列。通过这种方式，可以更换制造过程中发生的错误。此外，纠错码电路校正了激活命令时的错误，并且在预充电命令时存储检查位。

10. 发明授权

US07574648B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07574648B2
公开(公告)日：2009-08-11
申请号：US11194486
申请日：2005-08-02
申请人： Satoru Akiyama , Riichiro Takemura , Tomonori Sekiguchi
发明人： Satoru Akiyama , Riichiro Takemura , Tomonori Sekiguchi
IPC分类号： G11C29/00
CPC分类号： G11C29/4401 , G11C11/401 , G11C29/42 , G11C29/44
摘要： When the miniaturization of a DRAM advances, the capacity of a cell capacitor decreases, and further the voltage of a data line is lowered, the amount of read signals remarkably lowers, errors are produced during readout, and the yield of chips lowers. To solve the above problems, the present invention provides a DRAM that: has an error correcting code circuit for each sub-array; detects and corrects errors with said error correcting code circuit in both the reading and writing operations; and further has rescue circuits in addition to said error correcting code circuits and replaces a defective cell caused by hard error with a redundant bit.
摘要翻译：当DRAM的小型化进展时，单元电容器的容量减小，数据线的电压降低，读取信号量显着降低，读出时产生误差，芯片的产量降低。为了解决上述问题，本发明提供一种具有每个子阵列的纠错码电路的DRAM，在读取和写入操作中检测和纠正所述纠错码电路的错误; 并且除了所述纠错码电路之外还具有救援电路，并用冗余位代替由硬错误引起的故障单元。

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