专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明专利

JPH03118429A INFRARED-RAY THERMOMETER 失效
公开(公告)号：JPH03118429A
公开(公告)日：1991-05-21
申请号：JP25526389
申请日：1989-10-02
申请人： FUJITSU LTD
发明人： SAWADA SHIGETOMO , KOBAYASHI KAZUO , UEHARA YUJI , SATO FUMIHIKO
IPC分类号： G01J5/02
摘要： PURPOSE:To measure temperature accurately by operating the relationship between the detected temperature and the amount of infrared rays based on the amount of the infrared rays from a shutter when the temperature is not measured, and computing the temperature based on the result of the operation and the measured amount of the infrared rays when the temperature is measured. CONSTITUTION:When temperature is not measured, a switch 22 is connected to a terminal (a) based on the signal from a shutter opening and closing part 83. The temperature of the shutter is detected with a thermocouple and inputted into a temperature measuring part 24. The infrared rays radiated from the shutter are detected with an infrared ray sensor 21 through an optical fiber 5. Then, the detected amount of the infrared rays are inputted into an infrared-ray-attenuating-rate operating part 23 through the switch 22. The attenuating rate of the infrared rays due to the contamination of a probe is operated. When the temperature is measured, the switch 22 is connected to a terminal (b) based on the signal from the opening and closing part 83. The amount of the infrared rays radiated from a disk is detected with the sensor 21 through the optical fiber 5 and inputted into a temperature operating part 25. In the operating part 25, present temperature is operated highly accurately based on the attenuating rate of the infrared rays inputted from the operating part 23. The result is displayed on a temperature display part 26.

82. 发明专利

JPH0382763A FORMATION OF THIN FILM AND ETCHING METHOD 失效
公开(公告)号：JPH0382763A
公开(公告)日：1991-04-08
申请号：JP21753289
申请日：1989-08-25
申请人： FUJITSU LTD
发明人： UEHARA YUJI , KOBAYASHI KAZUO
IPC分类号： C23C14/54 , C23F4/00 , H01L21/203 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To accurately detect the speed of particles of a thin film forming element in plasma of gas and to properly control the formation of a thin film by measuring the Doppler width or Doppler shift of luminous rays not causing transition to the ground state from the particles. CONSTITUTION:Gas introduced into a vacuum vessel 1 is converted into plasma with a power source 14 for sputtering between a substrate 3 and a target 5 placed opposite to each other in the vessel 1. The plasma is converged on the target 5 through an electromagnet 16 and particles of a thin film forming element generated by sputtering are deposited on the substrate 3 to form a thin film. In this method, luminous rays from the particles in the plasma are introduced into a Fabry-Perot interference spectrometer 19 through a light receiving element 17 and optical fibers 18 and the Doppler width and/or Doppler shift of luminous rays not causing transition to the ground state among the introduced luminous rays is measured. This measured value is inputted into a computer 23 through a photodetector 21 and operational factors affecting the energy of the particles are controlled. The accuracy of measurement of the speed of the particles in the plasma is enhanced and the formation of a thin film is properly controlled.

83. 发明专利

JPH02246306A FORMING MAGNETIC THIN FILM 失效
公开(公告)号：JPH02246306A
公开(公告)日：1990-10-02
申请号：JP6834689
申请日：1989-03-20
申请人： FUJITSU LTD
发明人： UEHARA YUJI , KOBAYASHI KAZUO , SAWADA SHIGETOMO , SATO FUMIHIKO
IPC分类号： C23C14/14 , C23C14/34 , H01F41/18
摘要： PURPOSE:To stabilize the magnetic characteristics of a thin film, and improve the yield by controlling the power of a power supply at the time of sputtering formation of a Cr-containg alloy thin film, electromagnet current and Ar gas pressure by using luminous spectrum wavelength of Cr excitation atom as an index. CONSTITUTION:Rays from Cr atom at the time of sputtering are collected at the end portion of an optical fiber 24 by a condenser lens 23; only 357.9nm ray is led out with a spectroscope 3; while this ray is inputted to a Fabry-Perot spectrometer 1 via a lens 2a. Output from the spectrometer 1 is detected by a photo detector 25 via a lens 2b, and a computer 21 calculates the half-width of wavelength of luminous spectrum to be affected by Doppler effect. The following are so controlled that the calculated value is kept always at the optimum value set for film formation; the power of a sputtering power supply, a current made to flow in an electromagnet for controlling the magnetic field generating on the surface of a target, and the pressure of Ar gas. Thereby a film wherein the magnetic and structural characteristics are optimum and constant can be obtained.

84. 发明专利

JPH0264424A MEASURING METHOD OF TEMPERATURE OF SUBSTRATE IN VACUUM FILM-FORMING CHAMBER 失效
公开(公告)号：JPH0264424A
公开(公告)日：1990-03-05
申请号：JP21701588
申请日：1988-08-31
申请人： FUJITSU LTD
发明人： SATO FUMIHIKO , KOBAYASHI KAZUO , SAWADA SHIGETOMO , UEHARA YUJI
IPC分类号： G01J5/00
摘要： PURPOSE:To eliminate a variation in a measured value with the lowering of transmittance of infrared rays due to the stain of a probe for measurement and thereby to conduct accurate measurement of temperature by calibrating the measured value of the main body of a thermometer by using a blackbody furnace installed in a vacuum film-forming chamber. CONSTITUTION:In the case when an indicated value of a measured temperature by the main body 9' of a thermometer is different from a controlled temperature of the above-mentioned blackbody furnace 18, the indicated temperature is made to accord with the temperature of the blackbody furnace 18 by increasing a rate of amplification on the occasion of conversion of a detected amount of infrared emission into an electric signal by means of a volume adjusting knob of the main body 9' of the thermometer, for instance. Then, a probe 10 is moved to the blackbody furnace 18, the amount of emission of infrared rays is measured and calibration of an indicated temperature value of the main body 9' of the thermometer is conducted. At that time, the degree of the lowering of transmittance of the infrared rays due to a stain is known from the comparison between the temperature due to the amount of the infrared rays and a temperature due to a previously-measured amount of infrared rays. By calibrating a rate of emission of the thermometer by the rate of the lowering when a substrate temperature is measured subsequently, accordingly, the substrate temperature can be measured again with high precision.

85. 发明专利

JPH01231080A MAGNETIC RECORDING DEVICE 失效
公开(公告)号：JPH01231080A
公开(公告)日：1989-09-14
申请号：JP5616488
申请日：1988-03-11
申请人： FUJITSU LTD
发明人： WANO MASAHIRO , NAKAMURA SEIKICHI , UEHARA YUJI , NAKA TOSHIYA , MIKAMI TOMOHISA , EBINAKA TOSHIO , MOROO JUN
IPC分类号： B41J2/42 , G03G19/00
摘要： PURPOSE:To safely and easily perform high-speed recording with a simple structure by forming a magnetic latent image by changing the superconductive state of a superconductive member to a normal-conductive state on a prescribed pattern. CONSTITUTION:In each ring-like superconductor 46 of a recording body 41 passed through a uniform magnetic field producing means 42, electric currents produced by electromagnetic inductance are made to flow continuously and uniform magnetic fields are produced. When the recording body 41 in such state is selectively heated on a pattern corresponding to picture signals by means of a thermal head 43, the heated superconductor 46 exceeds the critical temperature and changes to a normal-conductive state. When the temperature of the superconductor 46 drops by cooling thereafter, an electric current is made to flow through the superconductor 46 by means of the magnetic field of the adjacent unheated superconductor 46 and a latent image is formed by magnetic field inversion. By causing magnetic toner to adhere to the magnetic latent image by means of a development counter 44, a desired picture is formed. Therefore, high-speed recording can be performed stably and easily with a simple structure.

86. 发明专利

JPH01124229A METHOD FOR MEASURING DRIFT MOBILITY 失效
公开(公告)号：JPH01124229A
公开(公告)日：1989-05-17
申请号：JP28113587
申请日：1987-11-09
申请人： FUJITSU LTD
发明人： UEHARA YUJI , WANO MASAHIRO , KIMURA MASATOSHI
IPC分类号： H01L21/66 , G01N27/00 , G03G5/06
摘要： PURPOSE:To make it possible to make compact a measuring apparatus itself at low cost and easily perform its measurement, by using a small and compact LED as a light source of an optical pulse. CONSTITUTION:A sample 1 to be measured is held between electrodes 3 and 4 in such a state that a voltage is applied by a high voltage power supply 2. A high brightness LED 5 using GaAlAs, for example, is provided on the front surface of one electrode 3 through a converging lens group 6 and generates an optical pulse of a short constant width at a predetermined time by a LED driver 8 which operates on receiving a signal from a pulse generator 7. A current is detected by an optical carrier generated in the sample 1 on receiving the optical pulse as a voltage across a load resistance 9 and the voltage is amplified by an amplifier 10 and observed by an oscilloscope 11 as a wave form.

87. 发明专利

JPS61281873A THIN FILM FORMATION DEVICE 失效
公开(公告)号：JPS61281873A
公开(公告)日：1986-12-12
申请号：JP12461585
申请日：1985-06-07
申请人： FUJITSU LTD
发明人： OSAME HIROSHI , ARAKI MAKOTO , UEHARA YUJI , KIYOTA KOHEI
IPC分类号： C23C16/50 , H01L21/205 , H01L31/0248 , H01L31/08
摘要： PURPOSE:To prevent the fine powder of a reaction product from infiltrating into an exhaust system by positioning an aperture end part of an exhaust port provided to a vessel in a rear side of an opposite face of both an electrode and a substrate. CONSTITUTION:In the inside of a vessel 2, a pipeline 32 is individually connected to an exhaust port 9 and an aperture end part 31 thereof is positioned in a rear side of an opposite face of both an electrode 4 and a substrate 1. Thereby both the Si fine powder 22 of a reaction product which is stuck on an inside wall region 21 of the vessel 2 and an activated seed which is formed in an activated seed generation region 33 of an opposite region of the substrate 1 and the electrode 4 are prevented from infiltrating into the inside of the exhaust port 9. Therefore the inside of the vessel 2 is maintained in the prescribed pressure and an amorphous Si film excellent in film quality is formed.

88. 发明专利

JPS61165763A AMORPHOUS SILICON ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPS61165763A
公开(公告)日：1986-07-26
申请号：JP707285
申请日：1985-01-17
申请人： FUJITSU LTD
发明人： UEHARA YUJI , KIYOTA KOHEI , ARAKI MAKOTO , OSAME HIROSHI
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14
摘要： PURPOSE:To obtain high acceptance potential by forming an electrostatic charge blocking layer made of amorphous silicon higher in the energy gap than an amorphous silicon photosensitive layer. CONSTITUTION:The charge blocking layer 41 formed on a substrate drum 12, in a thickness of 8-30mum, evacuating the inside of a vessel 13 to a vacuum of 10 torr, heating the drum 12 to 200-300 deg.C, opening valves 19, 20, 23, 27, 28 to introduce a gas mixture of diborane, disilane, and silane gases from each cylinder 22, 26, 30 into the vessel 13, and applying high frequency voltage between an electrode 16 and the drum 12 to cause glow discharge. Then, the amorphous silicon photosensitive layer 42 is formed in a thickness of 8-30mum on this layer 41 from silane, thus permitting the charge blocking layer 41 enhanced in the energy band by using the silane type gas mixture contg. disilane to be formed on the conductive substrate 12, and hence to effectively prevent injection of charge from the conductive substrate 12.

89. 发明专利

JP2010010377A Magnetoresistive element, method of manufacturing the same, and magnetic head 审中-公开
标题翻译：磁性元件，制造它们的方法和磁头
公开(公告)号：JP2010010377A
公开(公告)日：2010-01-14
申请号：JP2008167672
申请日：2008-06-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MASUKO JUN , UEHARA YUJI
IPC分类号： H01L43/08 , G11B5/39 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide: a magnetoresistive element having improved hard bias efficiency in particular; a method of manufacturing the same; and a magnetic head.
SOLUTION: The magnetoresistive element is composed so that a permanent magnet to apply magnetic domain control to a magnetoresistive film is disposed on both sides of a magnetism sensing part formed from the magnetoresistive film having a multilayered structure, and a film having a prescribed thickness, which is made of an insulating hard magnetic material, is formed between the side of the magnetism sensing part and the permanent magnet.
COPYRIGHT: (C)2010,JPO&INPIT

90. 发明专利

JP2007220850A Laminated magnetic film and magnetic head 审中-公开
标题翻译：层压磁膜和磁头
公开(公告)号：JP2007220850A
公开(公告)日：2007-08-30
申请号：JP2006038898
申请日：2006-02-16
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KANE JIYUNICHI , UEHARA YUJI , NOMA KENJI , CHIKASAWA TETSUSHI
IPC分类号： H01F10/16 , G11B5/31 , H01F41/18
CPC分类号： G11B5/3146 , G11B5/147 , G11B5/3116
摘要： PROBLEM TO BE SOLVED: To provide a magnetic pole material having a high saturation flux density, exhibiting excellent soft magnetic characteristics, and constituting the write magnetic pole of a magnetic head capable of high density recording.
SOLUTION: The laminated magnetic film 5 is formed by laminating a magnetic layer 10 principally comprising iron Fe and cobalt Co, and an NiFe layer 20 alternately wherein the NiFe layer 20 is formed as a discontinuous film. The NiFe layer 20 can be formed as a discontinuous film by forming it with an average thickness equal to or smaller than the surface roughness of the magnetic layer 10.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高饱和磁通密度的磁极材料，具有优异的软磁特性，并且构成能够进行高密度记录的磁头的写入磁极。解决方案：层叠磁性膜5通过主要包含铁Fe和钴Co的磁性层10和NiFe层20交替地层压形成，其中NiFe层20形成为不连续膜。 NiFe层20可以通过使其具有等于或小于磁性层10的表面粗糙度的平均厚度而形成为不连续膜。（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式