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81. 发明申请

US20120225053A1 COMPOSITIONS AND METHODS FOR THE PREVENTION AND TREATMENT OF CONDITIONS ASSOCIATED WITH INFLAMATION 审中-公开
标题翻译：预防和治疗与炎症有关的病症的组合物和方法
公开(公告)号：US20120225053A1
公开(公告)日：2012-09-06
申请号：US11920973
申请日：2006-05-24
申请人： Slavik Dushenkov , Patricia Lucas-Schnarre , Julie Beth Hirsch , David Evans , Kitty Evans
发明人： Slavik Dushenkov , Patricia Lucas-Schnarre , Julie Beth Hirsch , David Evans , Kitty Evans
IPC分类号： A61K31/353 , A61P11/06 , A61P25/00 , A61P1/00 , A61P11/00 , A61P37/08 , A61P31/00 , A61P19/02 , A61P17/06 , A61K31/7008 , A61K38/48 , A61K36/287 , A61K31/715 , A61K38/39 , A61K35/60 , A61K36/906 , A61K36/16 , A61K36/258 , A61K36/87 , A61K36/76 , A61K36/736 , A61K36/81 , A61P29/00
CPC分类号： A61K36/82 , A23L33/11 , A23L33/175 , A61K36/16 , A61K36/185 , A61K36/258 , A61K36/28 , A61K36/324 , A61K36/73 , A61K36/752 , A61K36/76 , A61K36/87 , A61K36/9066 , A61K36/9068 , A61K38/39 , A61K2300/00
摘要： The present invention provides methods for preventing, treating, managing and/or ameliorating a condition associated with inflammation (e.g., an inflammatory disorder) or a symptom thereof, the methods comprising administering to a subject in need thereof an effective amount of a theaflavin composition and an effective amount of one or more therapies other than such a theaflavin composition. In particular, the present invention provides methods for preventing, treating, managing and/or ameliorating a condition associated with inflammation (e.g., an inflammatory disorder) or a symptom thereof, the methods comprising administering to a subject in need thereof an effective amount of a theaflavin composition, an effective amount of a glucosamine composition, and optionally one or more other therapies.
摘要翻译：本发明提供了用于预防，治疗，控制和/或改善与炎症（例如，炎症性疾病）或其症状相关的病症的方法，所述方法包括向有需要的受试者施用有效量的茶黄素组合物和有效量的除了这种茶黄素组合物之外的一种或多种疗法。特别地，本发明提供了用于预防，治疗，控制和/或改善与炎症（例如，炎症性疾病）或其症状相关的病症的方法，所述方法包括向有需要的受试者施用有效量的茶黄素组合物，有效量的葡糖胺组合物，以及任选的一种或多种其它疗法。

82. 发明授权

US07875003B2 Medical device with elastomeric bulb 有权
标题翻译：带弹性球泡的医疗器械
公开(公告)号：US07875003B2
公开(公告)日：2011-01-25
申请号：US11289124
申请日：2005-11-29
申请人： Roger Howard Meek , David Evans
发明人： Roger Howard Meek , David Evans
IPC分类号： A61M29/00
CPC分类号： A61M25/10183 , A61M25/0017 , A61M25/002 , A61M25/10 , A61M2039/222 , Y10T29/494
摘要： In a pre-filled Foley catheter for urine drainage, the conventional clip for releasing sterile water from a bulb (21) at the proximal end of the catheter, to fill the anchor bulb (20) at the distal end of the device, is replaced by a plug (25) which has an annular portion connected to a thin stem (27) by a circle of weakness. Snapping the stem (27) from the annulus provides a tactile signal through the opaque latex lumen that the catheter has been actuated. There is no separate clip to be disposed of. The interface between the latex and the plug remains undisturbed. Further improvement in the shelf-life and convenience of use of the catheter is delivered by the use of a sleeve, which can be of shrink-wrap material, around the bulb (21) and optionally also around the drain coupling (15) of the catheter. Apparatus for placing the plug and the sleeve is also described.
摘要翻译：在用于排尿的预填充的Foley导管中，用于从导管的近端处的灯泡（21）释放无菌水以填充设备远端处的锚定灯泡（20）的常规夹子被替换通过具有环形部分的插头（25），所述环形部分通过一个弱点连接到细的杆（27）。从环形空间中抓住杆（27）通过导管已被致动的不透明胶乳腔提供触觉信号。没有单独的剪辑被丢弃。胶乳和塞子之间的界面保持不受干扰。导管的使用寿命和使用便利性的进一步改进是通过使用可以是包封材料的套筒（其可以是包封材料），并且可选地也围绕灯泡（21）的排水接头（15）导管。还描述了用于放置插头和套筒的装置。

83. 发明申请

US20100234234A1 Methods and Devices for Detecting Structural Changes in a Molecule Measuring Electrochemical Impedance 审中-公开
标题翻译：用于检测测量电化学阻抗的分子中的结构变化的方法和装置
公开(公告)号：US20100234234A1
公开(公告)日：2010-09-16
申请号：US12440832
申请日：2007-09-13
申请人： Paul Ko Ferrigno , Christoph Walti , David Evans , Steven Johnson , Alexander Giles Davies
发明人： Paul Ko Ferrigno , Christoph Walti , David Evans , Steven Johnson , Alexander Giles Davies
IPC分类号： C40B30/00 , C40B40/10 , G01F1/64
CPC分类号： G01N33/5438 , B01J19/0046 , B01J2219/00653 , B01J2219/00659 , B01J2219/00704 , B01J2219/00725
摘要： The invention relates to a method of detecting a structural change in a molecule, said molecule being attached to a surface, said surface being electrically conductive, wherein the phase of the electrochemical impedance at said surface is monitored, and wherein a change in the phase in the electrochemical impedance at said surface indicates a change in the structure of said molecule. The invention further relates to methods for making arrays having molecules such as, polypeptides attached to electrically conductive surfaces such as electrodes, and to arrays.
摘要翻译：本发明涉及一种检测分子中的结构变化的方法，所述分子附着于表面，所述表面是导电的，其中监测所述表面处的电化学阻抗的相位，并且其中相的变化所述表面的电化学阻抗表示所述分子的结构的变化。本发明还涉及制备具有分子的阵列的方法，所述分子例如附着到诸如电极的导电表面上的多肽，以及阵列。

84. 发明授权

US07762608B2 Vehicle with a trunk 有权
标题翻译：车辆带有行李箱
公开(公告)号：US07762608B2
公开(公告)日：2010-07-27
申请号：US12428033
申请日：2009-04-22
申请人： Klaus Gersmann , Andreas Clausen-Schaumann , David Evans
发明人： Klaus Gersmann , Andreas Clausen-Schaumann , David Evans
IPC分类号： B62D25/10 , B62D25/12
CPC分类号： B60J5/103
摘要： A motor vehicle includes a trunk, in which the trunk has a body cutout opening which can be closed off by a two-part trunk lid which is composed of an upper trunk lid and a lower trunk lid. The upper trunk lid can be pivoted downward by an angle from, in each case, one closed position into, in each case, one open position. The lower trunk lid has at least one pivot lever, which is arranged such that it can be pivoted by way of a pivot axle formed on a lower body section. In the open position of the lower trunk lid, the pivot lever is in engagement with the lower body section.
摘要翻译：机动车辆包括躯干，其中躯干具有主体切口，其可以由由上行李箱盖和下行李箱盖组成的两部分行李箱盖封闭。上行李箱盖可以在每种情况下向下一个角度向下枢转一个关闭位置，在每种情况下都是一个打开位置。下行李箱盖具有至少一个枢转杆，其布置成使得其能够通过形成在下主体部分上的枢轴枢转。在下行李箱盖的打开位置，枢转杆与下主体部分接合。

85. 发明申请

US20080177054A1 Automated Parallel Oligonucleotide Synthesis 审中-公开
标题翻译：自动平行寡核苷酸合成
公开(公告)号：US20080177054A1
公开(公告)日：2008-07-24
申请号：US11847589
申请日：2007-08-30
申请人： David Evans
发明人： David Evans
IPC分类号： C07H1/00 , B01J19/00
CPC分类号： B01J19/0046 , B01J2219/00315 , B01J2219/00324 , B01J2219/00328 , B01J2219/0036 , B01J2219/00376 , B01J2219/00412 , B01J2219/00416 , B01J2219/00585 , B01J2219/00587 , B01J2219/0059 , B01J2219/00599 , B01J2219/00689 , B01J2219/00691 , B01J2219/00695 , B01J2219/00698 , B01J2219/00722 , C40B50/08 , C40B60/14
摘要： The invention is a system and method for the automated synthesis of biopolymers, such as polynucleotides. The synthesis reactions are conducted asynchronously in separate reaction volumes to minimize idle times for the machinery and to allow shorter polynucleotides to be removed when complete, rather than at the end of the entire run.
摘要翻译：本发明是用于自动合成生物聚合物的系统和方法，例如多核苷酸。合成反应在单独的反应体积中异步进行，以最小化机器的空闲时间，并允许在完成时将其移除较短的多核苷酸，而不是在整个运行结束时除去。

86. 发明申请

US20070284575A1 Metal/semiconductor/metal current limiter 有权
标题翻译：金属/半导体/金属限流器
公开(公告)号：US20070284575A1
公开(公告)日：2007-12-13
申请号：US11893402
申请日：2007-08-15
申请人： Tingkai Li , Sheng Hsu , Wei-Wei Zhuang , David Evans
发明人： Tingkai Li , Sheng Hsu , Wei-Wei Zhuang , David Evans
IPC分类号： H01L29/12
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/31 , H01L27/2409 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method comprises: providing a substrate; forming an MSM bottom electrode overlying the substrate; forming a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forming an MSM top electrode overlying the semiconductor layer. The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).
摘要翻译：提供了一种用于形成具有MSM限流器的金属/半导体/金属（MSM）限流器和电阻存储器单元的方法。该方法包括：提供衬底; 形成覆盖所述衬底的MSM底部电极; 形成覆盖MSM底部电极的ZnO x半导体层，其中x在约1和约2之间的范围内; 并且形成覆盖半导体层的MSM顶部电极。可以通过旋涂，直流（DC）溅射，射频（RF）溅射，金属有机化学气相沉积（MOCVD）或原子层沉积（ALD）等多种不同的工艺形成ZnO x半导体。

87. 发明申请

US20070136336A1 Method and apparatus for constructing a compact similarity structure and for using the same in analyzing document relevance 失效
标题翻译：用于构建紧凑型相似度结构并用于分析文档相关性的方法和装置
公开(公告)号：US20070136336A1
公开(公告)日：2007-06-14
申请号：US11298500
申请日：2005-12-12
申请人： James Shanahan , Norbert Roma , David Evans
发明人： James Shanahan , Norbert Roma , David Evans
IPC分类号： G06F7/00
CPC分类号： G06F17/30705 , Y10S707/99935 , Y10S707/99942
摘要： A computer-readable medium comprises data structure for providing information about levels of similarity between pairs of N documents. The data structure comprises a plurality of entries of similarity values representing levels of similarity for a plurality of pairs of the documents. Each of the similarity values represents a level of similarity of one document of a given pair relative to the other document of the given pair. The similarity value of each entry is greater than a threshold similarity value that is greater than zero. The plurality of similarity-value entries are fewer than N2−N in number if the similarity values are asymmetric with regard to document pairing, and the plurality of similarity-value entries are fewer than N 2 - N 2 in number if the similarity values are symmetric with regard to document pairing. A method and apparatus for generating the data structure are described.
摘要翻译：计算机可读介质包括用于提供关于N个文档对之间的相似性级别的信息的数据结构。数据结构包括表示多对文档对象的相似度级的多个相似度条目。每个相似度值表示给定对的一个文档相对于给定对的另一个文档的相似度级别。每个条目的相似度值大于大于零的阈值相似度值。如果相似度值对于文档配对是不对称的，则多个相似值条目数量少于N≥2，并且多个相似值条目少于 $N2如果相似性值是对称的，则数字中的-N2文件配对。描述了用于生成数据结构的方法和装置。$

88. 发明申请

US20070015330A1 Metal/semiconductor/metal (MSM) back-to-back Schottky diode 有权
标题翻译：金属/半导体/金属（MSM）背对背肖特基二极管
公开(公告)号：US20070015330A1
公开(公告)日：2007-01-18
申请号：US11435669
申请日：2006-05-17
申请人： Tingkai Li , Sheng Hsu , David Evans
发明人： Tingkai Li , Sheng Hsu , David Evans
IPC分类号： H01L21/8242
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/31 , H01L27/2409 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method is provided for forming a metal/semiconductor/metal (MSM) back-to-back Schottky diode from a silicon (Si) semiconductor. The method deposits a Si semiconductor layer between a bottom electrode and a top electrode, and forms a MSM diode having a threshold voltage, breakdown voltage, and on/off current ratio. The method is able to modify the threshold voltage, breakdown voltage, and on/off current ratio of the MSM diode in response to controlling the Si semiconductor layer thickness. Generally, both the threshold and breakdown voltage are increased in response to increasing the Si thickness. With respect to the on/off current ratio, there is an optimal thickness. The method is able to form an amorphous Si (a-Si) and polycrystalline Si (polySi) semiconductor layer using either chemical vapor deposition (CVD) or DC sputtering. The Si semiconductor can be doped with a Group V donor material, which decreases the threshold voltage and increases the breakdown voltage.
摘要翻译：提供了用于从硅（Si）半导体形成金属/半导体/金属（MSM）背对背肖特基二极管的方法。该方法在底电极和顶电极之间沉积Si半导体层，并形成具有阈值电压，击穿电压和开/关电流比的MSM二极管。响应于控制Si半导体层厚度，该方法能够修改MSM二极管的阈值电压，击穿电压和导通/截止电流比。通常，响应于Si厚度的增加，阈值和击穿电压都增加。关于开/关电流比，存在最佳厚度。该方法能够使用化学气相沉积（CVD）或DC溅射形成非晶Si（a-Si）和多晶硅（polySi）半导体层。 Si半导体可以掺杂有V族施主材料，其降低阈值电压并增加击穿电压。

89. 发明申请

US20060194403A1 PCMO thin film with controlled resistance characteristics 审中-公开
标题翻译： PCMO薄膜具有受控电阻特性
公开(公告)号：US20060194403A1
公开(公告)日：2006-08-31
申请号：US11378719
申请日：2006-03-17
申请人： Tingkai Li , Wei-Wei Zhuang , David Evans , Sheng Hsu
发明人： Tingkai Li , Wei-Wei Zhuang , David Evans , Sheng Hsu
IPC分类号： H01L21/20
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： PrCaMnO (PCMO) thin films with predetermined memory-resistance characteristics and associated formation processes have been provided. In one aspect the method comprises: forming a Pr3+1−xCa2+xMnO thin film composition, where 0.1
摘要翻译：已经提供了具有预定的记忆电阻特性和相关的形成过程的PrCaMnO（PCMO）薄膜。在一个方面，所述方法包括：形成Pr 3+ 1-x 2 Ca 2 O 3 x MnO薄膜组成，其中0.1 _0.78Mn^{4+</SUP>_0.22O^2-_{2.96 组合， Mn和O离子的比例变化如下：O 2 - （2.96）; Mn（3+）+（（1-x）+ 8％）; 和Mn 4+（x-8％）。在另一方面，该方法响应于晶体取向在PCMO膜中产生密度。例如，如果PCMO膜具有（110）取向，则在垂直于（110）取向的平面中产生在每平方英尺5至6.76个Mn原子的范围内的密度。}}

90. 发明申请

US20060088974A1 METHOD OF AFFECTING RRAM CHARACTERISTICS BY DOPING PCMO THIN FILMS 有权
标题翻译：通过PCMO薄膜影响RRAM特性的方法
公开(公告)号：US20060088974A1
公开(公告)日：2006-04-27
申请号：US10971387
申请日：2004-10-21
申请人： Wei-Wei Zhuang , David Evans , Fengyan Zhang , Sheng Hsu
发明人： Wei-Wei Zhuang , David Evans , Fengyan Zhang , Sheng Hsu
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L45/1608 , C23C18/1216 , C23C18/1225 , C23C18/1283 , C23C18/1295 , H01L21/31691 , H01L28/20 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer.
摘要翻译：制造掺杂PCMO薄膜层的方法包括制备其中具有过渡金属添加剂的PCMO前体溶液; 并将掺杂的PCMO旋涂溶液旋涂到晶片上。

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