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81. 发明申请

US20110014500A1 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US20110014500A1
公开(公告)日：2011-01-20
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , C23C14/34 , B44C1/22
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

82. 发明申请

US20100258889A1 High performance MTJ elements for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US20100258889A1
公开(公告)日：2010-10-14
申请号：US12803191
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： An STT-MTJ MRAM cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a composite tri-layer free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译： STT-MTJ MRAM单元利用自旋角动量的传递作为改变自由层的磁矩方向的机构。电池包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，复合三层自由层其包括分别在3和6埃厚度的Fe的两个结晶层之间形成的约20埃厚度的Co60Fe20B20的非晶层。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

83. 发明授权

US07808027B2 Free layer/capping layer for high performance MRAM MTJ 有权
标题翻译：用于高性能MRAM MTJ的自由层/覆盖层
公开(公告)号：US07808027B2
公开(公告)日：2010-10-05
申请号：US12319971
申请日：2009-01-14
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： An MTJ MRAM cell and its method of formation are described. The cell includes a composite free layer having the general form (Ni88Fe12)1-xCo100x—Ni92Fe8 with x between 0.05 and 0.1 that provides low magnetization and negative magnetostriction. The magnetostriction can be tuned to a low value by a multilayer capping layer that includes a positive magnetostriction layer of NiFeHf(15%). When this cell forms an MRAM array, it contributes to a TMR≧26%, a TMR/Rp—cov≧15.5 and a high AQF (array quality factor) for write operations.
摘要翻译：描述了MTJ MRAM电池及其形成方法。电池包括具有通常形式（Ni88Fe12）1-xCo100x-Ni92Fe8的复合自由层，x在0.05和0.1之间，其提供低磁化和负磁致伸缩。可以通过包括NiFeHf（15％）的正磁致伸缩层的多层封盖层将磁致伸缩调节到较低的值。当这个单元格形成MRAM阵列时，它有助于写入操作的TMR≥26％，TMR / Rp-cov≥15.5和高AQF（阵列品质因数）。

84. 发明申请

US20100176429A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US20100176429A1
公开(公告)日：2010-07-15
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

85. 发明申请

US20100009467A1 Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current 有权
标题翻译：新型磁隧道结（MTJ）降低自旋转移磁化开关电流
公开(公告)号：US20100009467A1
公开(公告)日：2010-01-14
申请号：US12584971
申请日：2009-09-15
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： H01L43/12
CPC分类号： H01L43/08 , H01L43/12
摘要： A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to
摘要翻译：公开了将旋转RAM中的自旋转移磁化开关电流（Jc）最小化为<1×10 6 A / cm 2的MTJ。 MTJ具有Co60Fe20B20 / MgO / Co60Fe20B20配置，其中CoFeB AP1钉扎和自由层是无定形的，并且通过ROX或NOX工艺形成结晶MgO隧道势垒。覆盖层优选为Hf / Ru复合材料，其中下部Hf层用作优异的吸氧材料，以减少自由层/覆盖层界面处的磁性“死层”，从而增加dR / R，并降低He和Jc 。退火温度降低至约280℃，以产生比350℃退火更平滑的CoFeB / MgO界面和较小的偏移场。在第二实施例中，AP1层具有CoFeB / CoFe构型，其中下CoFeB层是无定形的，并且上CoFe层是结晶的，以进一步改善dR / R，并将RA降低至<10欧姆/ m 2。

86. 发明授权

US07542249B2 Bottom spin valve with laminated CoFe free layer for ultra-high density recording 失效
标题翻译：底部自旋阀，具有层压CoFe自由层，用于超高密度记录
公开(公告)号：US07542249B2
公开(公告)日：2009-06-02
申请号：US11269473
申请日：2005-11-08
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3906 , G11B7/0053 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin (
摘要翻译：提供底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型的GMR传感器的两个实施例及其制造方法。在一个实施例中，传感器具有超薄（<20埃）单自由层和复合高电导层（HCL），提供高输出，低矫顽力和正磁致伸缩。在第二实施例中，传感器具有复合自由层和单个HCL，其也具有高输出，低矫顽力和正磁致伸缩。传感器能够读取超过60Gb / in2的密度。

87. 发明授权

US07394625B2 Structure/method to form bottom spin valves for ultra-high density 有权
标题翻译：用于形成超高密度底部自旋阀的结构/方法
公开(公告)号：US07394625B2
公开(公告)日：2008-07-01
申请号：US11389677
申请日：2006-03-27
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3929 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/302 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which is a more uniform and dense layer than such layers formed by high temperature annealing or reactive-ion etching. In one embodiment, the sensor has an ultra thin composite free layer and a high-conductance layer (HCL), providing high output and low coercivity. In a second embodiment, along with the same NOL, the sensor has a laminated free layer which includes a non-magnetic conductive layer, which also provides high output and low coercivity. The sensors are capable of reading densities exceeding 60 Gb/in2.
摘要翻译：底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型的GMR传感器的两个实施例与其制造方法一起提供。在每个实施例中，传感器包括原位自然氧化的镜面反射层（NOL），其比通过高温退火或反应离子蚀刻形成的这种层更均匀和致密的层。在一个实施例中，传感器具有超薄复合自由层和高电导层（HCL），提供高输出和低矫顽力。在第二实施例中，与相同的NOL一起，传感器具有包括非磁性导电层的层叠自由层，其也提供高输出和低矫顽力。这些传感器能够读取超过60Gb / in <2>的密度。

88. 发明申请

US20080088986A1 Hafnium doped cap and free layer for MRAM device 有权
标题翻译：铪掺杂帽和MRAM器件的自由层
公开(公告)号：US20080088986A1
公开(公告)日：2008-04-17
申请号：US11582244
申请日：2006-10-17
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
摘要翻译：描述了高性能MTJ及其制造方法。使用NiFeHf的覆盖层将氧气从自由层中吸出，从而增加了自由层 - 隧道层界面的清晰度。自由层包含两个NiFe层，它们的磁致伸缩常数是相反的，从而很大程度地相互抵消。

89. 发明授权

US07325295B2 Structure/method to form bottom spin valves for ultra-high density 失效
公开(公告)号：US07325295B2
公开(公告)日：2008-02-05
申请号：US11389686
申请日：2006-03-27
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3929 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/302 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which is a more uniform and dense layer than such layers formed by high temperature annealing or reactive-ion etching. In one embodiment, the sensor has an ultra thin composite free layer and a high-conductance layer (HCL), providing high output and low coercivity. In a second embodiment, along with the same NOL, the sensor has a laminated free layer which includes a non-magnetic conductive layer, which also provides high output and low coercivity. The sensors are capable of reading densities exceeding 60 Gb/in2.

90. 发明授权

US07122852B2 Structure/method to fabricate a high performance magnetic tunneling junction MRAM 失效
标题翻译：制造高性能磁隧道结MRAM的结构/方法
公开(公告)号：US07122852B2
公开(公告)日：2006-10-17
申请号：US10844171
申请日：2004-05-12
申请人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
IPC分类号： H01L31/113 , H01L29/76 , H01L21/00
CPC分类号： H01L43/12 , H01L43/08 , Y10S977/934 , Y10S977/935
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
摘要翻译：在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。作为溅射蚀刻的结果，Ta层具有光滑的表面，并且光滑的表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层），其中具有超薄，光滑，且具有较高的击穿电压。在Ta的溅射蚀刻层上形成NiCr种子层。在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

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