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81. 发明申请

US20100225903A1 PATTERN DEFECT INSPECTION APPARATUS AND METHOD 有权
标题翻译：图案缺陷检查装置及方法
公开(公告)号：US20100225903A1
公开(公告)日：2010-09-09
申请号：US12781682
申请日：2010-05-17
申请人： Hidetoshi NISHIYAMA , Kei Shimura , Sachio Uto , Minori Noguchi
发明人： Hidetoshi NISHIYAMA , Kei Shimura , Sachio Uto , Minori Noguchi
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/94 , G01N21/9501 , G01N2021/4711
摘要： A pattern defect inspection apparatus capable of detecting minute defects on a sample with high sensitivity without generating speckle noise in signals is realized. Substantially the same region on a surface of a wafer is detected by using two detectors at mutually different timings. Output signals from the two detectors are summed and averaged to eliminate noise. Since a large number of rays of illumination light are not simultaneously irradiated to the same region on the wafer, a pattern defect inspection apparatus capable of suppressing noise resulting from interference of a large number of rays, eliminating noise owing to other causes and detecting with high sensitivity minute defects on the sample without the occurrence of speckle noise in the signal can be accomplished.
摘要翻译：实现能够以高灵敏度检测样品上的微小缺陷而不产生信号中的斑点噪声的图案缺陷检查装置。通过在相互不同的定时使用两个检测器来检测晶片表面上的基本上相同的区域。来自两个检测器的输出信号被相加和平均以消除噪声。由于大量的照明光线不能同时照射到晶片上的相同区域，所以能够抑制由于大量光线的干扰而产生的噪声的图案缺陷检查装置，消除由于其它原因引起的噪声和高检测可以实现样品上的灵敏度微小缺陷，而不会在信号中发生斑点噪声。

82. 发明授权

US06897956B2 Apparatus and method for measuring alignment accuracy, as well as method and system for manufacturing semiconductor device 失效
标题翻译：用于测量对准精度的装置和方法，以及用于制造半导体器件的方法和系统
公开(公告)号：US06897956B2
公开(公告)日：2005-05-24
申请号：US10235656
申请日：2002-09-06
申请人： Minori Noguchi , Masahiko Nakada , Takahiko Suzuki , Taketo Ueno , Toshihiko Nakata , Shunji Maeda
发明人： Minori Noguchi , Masahiko Nakada , Takahiko Suzuki , Taketo Ueno , Toshihiko Nakata , Shunji Maeda
IPC分类号： G01B11/00 , G01B11/27 , H01L21/027 , H01L21/66 , H05K1/02 , H05K3/46
CPC分类号： G01B11/272 , H05K1/0269 , H05K3/4638
摘要： An apparatus for measuring an alignment accuracy between overlaid alignment marks formed to each of alignment mark portions on every plural chip units or exposure units arranged on a substrate to be measured, comprising: an XY stage running in a direction x and in a direction y while mounting the substrate; an illumination optical system for illuminating each of the alignment mark portions in a state where the XY stage runs in a direction x which is a direction of arranging the chips; a detecting optical system having an objective lens for collecting a reflection light in the running state obtained from the overlaid alignment marks, a focusing optical system for focusing the reflection light in the running state obtained from the objective lens, a scanning optical system for scanning reflection light image in the running state focused by the focusing optical system in a direction opposite to that of the running and a linear image sensor receiving reflection light image substantially in a static state being scanned in the opposite direction by the scanning optical system and converting them into image signal; and an alignment accuracy calculation device for measuring the alignment accuracy between the overlaid alignment marks at least for a direction perpendicular to the running direction based on the image signal converted by the linear image sensor.
摘要翻译：一种用于测量在布置在待测量基板上的每个多个芯片单元或曝光单元上形成的每个对准标记部分上的重叠对准标记之间的对准精度的装置，包括：沿x方向和y方向运行的XY台，安装基板; 照明光学系统，用于在XY台在作为排列芯片的方向的方向x上行进的状态下照亮每个对准标记部分; 一种检测光学系统，具有用于收集从重叠的对准标记获得的运行状态的反射光的物镜，用于将反射光聚焦在从物镜获得的运行状态的聚焦光学系统，用于扫描反射的扫描光学系统聚焦光学系统以与行进方向相反的方向聚焦的运行状态的光图像和接收基本处于静止状态的反射光图像的线性图像传感器被扫描光学系统沿相反方向扫描并将其转换成图像信号; 以及对准精度计算装置，用于根据由线性图像传感器转换的图像信号，至少对垂直于行进方向的方向测量重叠的对准标记之间的对准精度。

83. 发明授权

US07271908B2 Apparatus and method for measuring alignment accuracy, as well as method and system for manufacturing semiconductor device 失效
标题翻译：用于测量对准精度的装置和方法，以及用于制造半导体器件的方法和系统
公开(公告)号：US07271908B2
公开(公告)日：2007-09-18
申请号：US11131378
申请日：2005-05-18
申请人： Minori Noguchi , Masahiko Nakada , Takahiko Suzuki , Taketo Ueno , Toshihiko Nakata , Shunji Maeda
发明人： Minori Noguchi , Masahiko Nakada , Takahiko Suzuki , Taketo Ueno , Toshihiko Nakata , Shunji Maeda
IPC分类号： G01B11/00
CPC分类号： G01B11/272 , H05K1/0269 , H05K3/4638
摘要： An apparatus for measuring an alignment accuracy between overlaid alignment marks formed to each of alignment mark portions on every plural chip units or exposure units arranged on a substrate to be measured includes an XY stage movable X and Y directions while mounting the substrate, an illumination system for illuminating each of the alignment mark portions, a detecting system having a lens for collecting a reflection light, a focusing system for focusing the reflection light, a scanning system for scanning a reflection light image and an image sensor receiving reflection light image for conversion into an image signal. An alignment accuracy calculator measures the alignment accuracy between the overlaid alignment marks.
摘要翻译：用于测量在布置在被测定的基板上的每个多个芯片单元或曝光单元上形成的每个对准标记部分上的重叠对准标记之间的对准精度的装置包括XY台可移动X和Y方向，同时安装基板，照明系统用于照亮每个对准标记部分，具有用于收集反射光的透镜的检测系统，用于聚焦反射光的聚焦系统，用于扫描反射光图像的扫描系统和接收反射光图像的图像传感器转换成图像信号。对准精度计算器测量重叠对准标记之间的对准精度。

84. 发明申请

US20050206898A1 Apparatus and method for measuring alignment accuracy, as well as method and system for manufacturing semiconductor device 失效
标题翻译：用于测量对准精度的装置和方法，以及用于制造半导体器件的方法和系统
公开(公告)号：US20050206898A1
公开(公告)日：2005-09-22
申请号：US11131378
申请日：2005-05-18
申请人： Minori Noguchi , Masahiko Nakada , Takahiko Suzuki , Taketo Ueno , Toshihiko Nakata , Shunji Maeda
发明人： Minori Noguchi , Masahiko Nakada , Takahiko Suzuki , Taketo Ueno , Toshihiko Nakata , Shunji Maeda
IPC分类号： G01B11/00 , G01B11/27 , H01L21/027 , H01L21/66 , H05K1/02 , H05K3/46
CPC分类号： G01B11/272 , H05K1/0269 , H05K3/4638
摘要： An apparatus for measuring an alignment accuracy between overlaid alignment marks formed to each of alignment mark portions on every plural chip units or exposure units arranged on a substrate to be measured includes an XY stage movable X and Y directions while mounting the substrate, an illumination system for illuminating each of the alignment mark portions, a detecting system having a lens for collecting a reflection light, a focusing system for focusing the reflection light, a scanning system for scanning a reflection light image and an image sensor receiving reflection light image for conversion into an image signal. An alignment accuracy calculator measures the alignment accuracy between the overlaid alignment marks.
摘要翻译：用于测量在布置在被测定的基板上的每个多个芯片单元或曝光单元上形成的每个对准标记部分上的重叠对准标记之间的对准精度的装置包括XY台可移动X和Y方向，同时安装基板，照明系统用于照亮每个对准标记部分，具有用于收集反射光的透镜的检测系统，用于聚焦反射光的聚焦系统，用于扫描反射光图像的扫描系统和接收反射光图像的图像传感器转换成图像信号。对准精度计算器测量重叠对准标记之间的对准精度。

85. 发明授权

US06650409B1 Semiconductor device producing method, system for carrying out the same and semiconductor work processing apparatus included in the same system 失效
标题翻译：半导体器件制造方法，用于实施相同的系统和包括在同一系统中的半导体工件处理设备
公开(公告)号：US06650409B1
公开(公告)日：2003-11-18
申请号：US08617270
申请日：1996-03-14
申请人： Minori Noguchi , Yukio Kembo , Hiroshi Morioka , Hidetoshi Nishiyama , Hideaki Doi , Masataka Shiba , Yoshiharu Shigyo , Kazuhiko Matsuoka , Kenji Watanabe , Yoshimasa Ohshima , Fumiaki Endo , Yuzo Taniguchi
发明人： Minori Noguchi , Yukio Kembo , Hiroshi Morioka , Hidetoshi Nishiyama , Hideaki Doi , Masataka Shiba , Yoshiharu Shigyo , Kazuhiko Matsuoka , Kenji Watanabe , Yoshimasa Ohshima , Fumiaki Endo , Yuzo Taniguchi
IPC分类号： G01N2189
CPC分类号： H01L21/67288 , G01N21/9501 , H01J2237/0225 , H01L21/67253 , H01L21/681
摘要： A semiconductor device producing method and a semiconductor device producing system employs a processing apparatus provided with a dust particle detecting apparatus. The dust particle detecting apparatus measures the condition of adhesion of dust particles adhering to a work at least before or after processing the work, manages the condition of incremental adhesion of dust particles to the work resulting from processing for each lot of works or for each work on the basis of the measured condition of adhesion of dust particles measured before or after processing the work, and determines the time when the processing apparatus is to be cleaned or the cycle of cleaning the processing apparatus on the basis of the managed condition of adhesion of dust particles.
摘要翻译：半导体器件制造方法和半导体器件制造系统采用具有灰尘粒子检测装置的处理装置。尘埃粒子检测装置至少在工件加工之前或之后测量附着在工件上的灰尘颗粒的附着状态，管理灰尘颗粒对于每批工件或每个工件的加工产生的增加粘附的条件基于在处理工件之前或之后测量的粉尘颗粒的粘附测量条件，并根据管理的粘附条件确定处理设备要清洁的时间或清洁处理设备的循环灰尘颗粒。

86. 发明授权

US5274434A Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line 失效
标题翻译：半导体批量生产线实时检测外来颗粒的方法和装置
公开(公告)号：US5274434A
公开(公告)日：1993-12-28
申请号：US778363
申请日：1991-10-17
申请人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Yuzo Taniguchi
发明人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Yuzo Taniguchi
IPC分类号： G01N21/94 , G01N21/956 , G01R31/308 , H01J37/00 , H01L21/00 , H01L21/66 , H01L21/68 , G01N21/89 , G02B27/46 , G06F15/46
CPC分类号： H01L21/681 , B82Y15/00 , G01N21/94 , G01R31/308 , H01J37/00 , H01L21/67253 , H01L21/67276 , H01L21/67288 , H01L22/20 , G01N2021/8822 , G01N21/95623 , H01J2237/022 , H01J2237/0225 , H01L22/12
摘要： In a mass production line of a semiconductor manufacturing process, foreign particle inspection method and apparatus for preventing occurrence of large quantities of defects and for keeping a necessary yield. The inspection apparatus is made up in a small-sized apparatus and disposed at inlet/outlet of processing apparatuses of the production line or to a transfer system between the processing apparatuses. The inspection apparatus includes at least one monitor for real-time sampling foreign particles possible deposited on wafer which is being carried by the transfer system, thereby enabling simplification in construction of the production line and reduction of manufacturing cost. The inspection apparatus may comprise a refractive index changeable type lens array, a spatial filter and a pattern data elimination circuit, and makes possible to conduct foreign particle inspection on repetitively-patterned portions of the wafers during transfer. With the spatial filter for eliminating repetitive data of the repetition patterns the small-sized compact inspection apparatus is capable of real-time inspecting the foreign particles on the wafers at a high speed.
摘要翻译：在半导体制造方法的大规模生产线中，用于防止发生大量缺陷并保持必要成品率的外来颗粒检查方法和装置。检查装置由小型装置构成，配置在生产线的处理装置的出入口处或处理装置之间的转印系统。该检查装置包括至少一个监视器，用于实时采样可能沉积在由转印系统携带的晶片上的异物，从而能够简化生产线的构造和降低制造成本。检查装置可以包括折射率可变型透镜阵列，空间滤光器和图案数据消除电路，并且可以在转印期间对晶片的重复构图部分进行异物检查。利用用于消除重复图案的重复数据的空间滤波器，小型紧凑型检查装置能够以高速实时检查晶片上的异物。

87. 发明授权

US5463459A Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process 失效
标题翻译：用于分析半导体制造工艺中的外来颗粒的产生状态的方法和装置
公开(公告)号：US5463459A
公开(公告)日：1995-10-31
申请号：US46720
申请日：1993-04-16
申请人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
发明人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
IPC分类号： G01N21/00 , G01N21/94 , G01N21/95 , G01N21/956 , G01R31/308 , H01J37/00 , H01L21/00 , H01L21/66 , H01L21/68 , G01N21/89 , G02B27/46 , G06F15/46
CPC分类号： H01L21/681 , B82Y15/00 , G01N21/94 , G01N21/9501 , G01N21/95623 , G01R31/308 , H01J37/00 , H01L21/67253 , H01L21/67288 , G01N2021/8822 , H01J2237/022 , H01J2237/0225 , H01L22/12
摘要： A defect detecting apparatus including an illumination system for radiating a light of a plane wave linearly to a substrate having repetitive patterns of different pitches; a focusing optical system for focusing a light image reflected from the substrate thus illuminated by the illumination system; a spatial filter disposed intermediate the focusing optical system so as to shield a diffraction light from repetitive patterns of a small pitch on the substrate; a detector for detecting the light image formed by the focusing optical system; an erasing means for comparing and erasing signals which are generated on the basis of repetitive patterns of a large pitch and obtained through the spatial filter, out of signals detected by the detector; and a defect detecting means for detecting defects on the substrate in accordance with a signal detected by the detector, as well as a method applied to the said apparatus.
摘要翻译：一种缺陷检测装置，包括用于将平面波的光线线性地发射到具有不同间距的重复图案的基板的照明系统; 聚焦光学系统，用于聚焦由照明系统照射的从基板反射的光图像; 设置在聚焦光学系统之间的空间滤光器，以便屏蔽来自基板上的小间距的重复图案的衍射光; 用于检测由聚焦光学系统形成的光图像的检测器; 擦除装置，用于根据由检测器检测到的信号，比较和擦除基于大间距的重复图案并通过空间滤波器获得的信号; 以及缺陷检测装置，用于根据由检测器检测的信号检测基板上的缺陷，以及应用于所述装置的方法。

88. 发明授权

US5233191A Method and apparatus of inspecting foreign matters during mass production start-up and mass production line in semiconductor production process 失效
标题翻译：在半导体生产过程中批量生产启动和批量生产线中检查异物的方法和装置
公开(公告)号：US5233191A
公开(公告)日：1993-08-03
申请号：US679317
申请日：1991-04-02
申请人： Minori Noguchi , Yukio Kembo , Hiroshi Morioka , Hiroshi Yamaguchi , Makiko Kohno , Yoshimasa Ohshima
发明人： Minori Noguchi , Yukio Kembo , Hiroshi Morioka , Hiroshi Yamaguchi , Makiko Kohno , Yoshimasa Ohshima
IPC分类号： G01N21/94 , G01N21/956 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/14 , G01Q60/10 , G01R31/311 , H01J37/256 , H01L21/00 , H01L21/66
CPC分类号： H01L21/67253 , G01R31/311 , H01J37/256 , H01L21/67276 , H01L21/67288 , H01L22/20 , B82Y35/00 , G01N2021/8822 , G01N21/94 , G01N21/95623
摘要： Method and apparatus of detecting, analyzing and evaluating the content of foreign matters such as dusts and impurities contained in various materials, units, processes and environment standing for constituting components of a mass production line during mass production start-up and during mass production, in order to manage a semiconductor production process. A mass production off-line system including an apparatus for detecting, analyzing and evaluating the content of foreign matters during the mass production start-up is separated from the production line and installed independently thereof. Monitors for detection of foreign matters are provided at necessary locations in the production line and monitor data is evaluated through various units to manage the content of foreign matters in the production line, permitting efficient and economical mass production start-up and mass production. The kind of element of a foreign matter on sampling wafer detected in the mass production line is analyzed by means of STM/STS and the results are compared with a data base to effect identification. A foreign matter or a contaminant is detected by detecting a scatttered beam, of a light spot which scans the surface of a substrate. The detection of the scattered beam is carried out under the condition that Rayleigh scattering of the light spot on the light spot irradiation and reflection paths and Rayleigh scattering of the scattered beam on the scattered beam detection path are suppressed to a minimum. For the suppression of Rayleigh scattering, a low-pressure or low-temperature atmosphere may be used.
摘要翻译：检测，分析和评估大规模生产启动期间和批量生产期间大规模生产线组成部件的各种材料，单位，工艺和环境中所含的灰尘和杂质等杂质的含量，为了管理半导体生产过程。包括用于在批量生产启动期间检测，分析和评估异物含量的装置的批量生产离线系统与生产线分离并独立安装。在生产线必需的位置提供检测异物的监测器，通过各种单位对监测数据进行评估，对生产线内的异物含量进行管理，实现高效，经济的批量生产启动和批量生产。通过STM / STS分析在大规模生产线上检测到的采样晶圆上的异物元素的种类，并将结果与数据库进行比较以进行识别。通过检测扫描基板表面的光斑的光斑光束来检测异物或污染物。在光点照射和反射路径上的光斑的瑞利散射和散射光束检测路径上的散射光束的瑞利散射被抑制到最小的条件下进行散射光束的检测。为了抑制瑞利散射，可以使用低压或低温气氛。

89. 发明申请

US20050206887A1 Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process 失效
标题翻译：用于分析半导体制造工艺中的外来颗粒的产生状态的方法和装置
公开(公告)号：US20050206887A1
公开(公告)日：2005-09-22
申请号：US11128352
申请日：2005-05-13
申请人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
发明人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
IPC分类号： G01N21/00 , G01N21/94 , G01N21/95 , G01N21/956 , G01R31/308 , H01J37/00 , H01L21/00 , H01L21/66 , H01L21/68
CPC分类号： H01L21/681 , B82Y15/00 , G01N21/94 , G01N21/9501 , G01N21/95623 , G01N2021/8822 , G01R31/308 , H01J37/00 , H01J2237/022 , H01J2237/0225 , H01L21/67253 , H01L21/67288 , H01L22/12
摘要： An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.
摘要翻译：用于检测试样缺陷的装置和方法包括照射光学单元，其将激光倾斜地突出到在一个方向上在一个方向上比在横向方向上更长的区域，安装样本的台单元，可移动的检测光学单元，检测光学单元，其在桌子移动时利用图像传感器检测由激光照射的样本的光，以及信号处理器。信号处理器处理从检测光学单元的图像传感器输出的信号并转换为数字信号，并通过将转换的数字信号与参考数字信号进行比较来提取样本的缺陷。显示单元显示由信号处理器提取的缺陷的信息。

90. 发明授权

US06894773B2 Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process 失效
标题翻译：用于分析半导体制造工艺中的外来颗粒的产生状态的方法和装置
公开(公告)号：US06894773B2
公开(公告)日：2005-05-17
申请号：US09805188
申请日：2001-03-14
申请人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
发明人： Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
IPC分类号： G01N21/00 , G01N21/94 , G01N21/95 , G01N21/956 , G01R31/308 , H01J37/00 , H01L21/00 , H01L21/66 , H01L21/68
CPC分类号： H01L21/681 , B82Y15/00 , G01N21/94 , G01N21/9501 , G01N21/95623 , G01N2021/8822 , G01R31/308 , H01J37/00 , H01J2237/022 , H01J2237/0225 , H01L21/67253 , H01L21/67288 , H01L22/12
摘要： A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.
摘要翻译：半导体制造线中的半导体器件的处理方法包括在第一处理设备中处理衬底，将在第一处理设备中处理的衬底转移到检测设备，而不从半导体制造线移除衬底，同时继续制造半导体检测转移到检测装置的基板上的异物缺陷，以及根据来自检测的数据确定处理装置的异物生成条件。

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