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81. 发明申请

US20100255681A1 SLURRY COMPOSITION AND METHOD OF FABRICATING DAMASCENE STRUCTURE USING THE SAME 有权
标题翻译：浆料组合物和使用其制备大分子结构的方法
公开(公告)号：US20100255681A1
公开(公告)日：2010-10-07
申请号：US12546688
申请日：2009-08-25
申请人： Song-Yuan Chang , Wen-Tsai Tsai , Ming-Hui Lu , Po-Yuan Shen
发明人： Song-Yuan Chang , Wen-Tsai Tsai , Ming-Hui Lu , Po-Yuan Shen
IPC分类号： H01L21/304 , C09K13/00 , C09K13/02
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： A slurry composition has an amount of 100% and includes abrasives, an acid-base pH adjustor, an oxidant and water. A content of the abrasives is 10 wt % to 40 wt %, and a polydisperse index of the abrasives sizes is greater than 1.8. A content of the acid-base pH adjustor is 0.01 wt % to 10 wt %. A content of the oxidant is 0.01 wt % to 10 wt %. A remaining portion of the slurry composition is water.
摘要翻译：浆料组合物的量为100％，包括研磨剂，酸碱pH调节剂，氧化剂和水。研磨剂的含量为10重量％〜40重量％，研磨剂的多分散指数大于1.8。酸碱pH调节剂的含量为0.01重量％〜10重量％。氧化剂的含量为0.01重量％〜10重量％。浆料组合物的剩余部分是水。

82. 发明申请

US20100007843A1 SPACER STRUCTURE 有权
标题翻译：间隔结构
公开(公告)号：US20100007843A1
公开(公告)日：2010-01-14
申请号：US12327819
申请日：2008-12-04
申请人： Po-Yuan Shen
发明人： Po-Yuan Shen
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F2001/13396 , G02F2001/13398
摘要： A spacer structure includes a first substrate, an overcoat layer, first spacers, second spacers, and a second substrate. The first spacers are disposed in a first region, and the overcoat layer has a first thickness in the first region. The second spacers are disposed in a second region, and the overcoat layer has a second thickness in the second region. The first spacers and the second spacers have the same height, and the first thickness is greater than the second thickness. Accordingly, no gap exists between each of the first spacers and the second substrate; however, a gap exists between each or the second spacers and the second substrate.
摘要翻译：间隔结构包括第一基底，外涂层，第一间隔物，第二间隔物和第二基底。第一间隔件设置在第一区域中，并且外涂层在第一区域具有第一厚度。第二间隔件设置在第二区域中，并且外涂层在第二区域具有第二厚度。第一间隔件和第二间隔件具有相同的高度，第一厚度大于第二厚度。因此，在每个第一间隔件和第二基板之间不存在间隙; 然而，在每个或第二间隔件和第二衬底之间存在间隙。

83. 发明授权

US07588971B2 Method of fabricating vertical thin film transistor 有权
公开(公告)号：US07588971B2
公开(公告)日：2009-09-15
申请号：US11778668
申请日：2007-07-17
申请人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L51/057 , Y10S438/944 , Y10S438/951
摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

84. 发明申请

US20090059186A1 LAMP HOLDER OF A PROJECTION APPARATUS AND FABRICATION THEREOF 审中-公开
标题翻译：投影仪的灯具及其制造
公开(公告)号：US20090059186A1
公开(公告)日：2009-03-05
申请号：US12123518
申请日：2008-05-20
申请人： Chih-Hao Wu , Ying-Yuan Shen , Jung-Chi Chen , Tsan-Fu Tseng
发明人： Chih-Hao Wu , Ying-Yuan Shen , Jung-Chi Chen , Tsan-Fu Tseng
IPC分类号： F21V33/00
CPC分类号： C23C8/36 , C23C28/04 , C25D11/08 , C25D11/243 , C25D11/246 , C25D11/30 , G03B21/16 , G03B21/2026 , G03B21/2086
摘要： A method for forming a lamp holder. The lamp holder is applied in a projection apparatus. First, the lamp holder comprising metal is provided. An insulating layer is formed on one surface of the lamp holder to insulate the lamp holder from another element of the projection apparatus.
摘要翻译：一种用于形成灯座的方法。灯座应用在投影设备中。首先，提供包括金属的灯座。在灯座的一个表面上形成绝缘层，以将灯座与投影设备的另一个元件绝缘。

85. 发明申请

US20080084759A1 Nitride trapping memory device and method for reading the same 有权
标题翻译：氮化物捕获存储器件及其读取方法
公开(公告)号：US20080084759A1
公开(公告)日：2008-04-10
申请号：US11987240
申请日：2007-11-28
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.
摘要翻译：氮化物捕获存储器件包括比较器，偏置单元，存储单元，循环单元，补偿单元和控制单元。比较器具有参考电压。偏置单元用于向比较器输出偏置电压，并且比较器根据偏置电压和参考电压的比较输出位值。存储单元经由第一开关连接到偏置单元。循环电池通过第二开关连接到偏置单元。补偿单元经由第三开关连接到偏置单元。控制单元用于根据位值控制循环单元和补偿单元。

86. 外观设计

USD560097S1 Container for making tea or the like 有权
标题翻译：制茶的容器等
公开(公告)号：USD560097S1
公开(公告)日：2008-01-22
申请号：US29264310
申请日：2006-08-09
申请人： Tzu Yuan Shen
设计人： Tzu Yuan Shen

87. 发明授权

US07262999B2 System and method for preventing read margin degradation for a memory array 有权
标题翻译：用于防止存储器阵列的读取容限劣化的系统和方法
公开(公告)号：US07262999B2
公开(公告)日：2007-08-28
申请号：US10997114
申请日：2004-11-24
申请人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
发明人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/349 , G11C16/0475
摘要： An ultra cycling nitride read only memory (NROM) device is coupled to a NROM array such that both bits of the ultra cycling NROM device will be erased when all NROM devices of the NROM array are erased. The ultra cycling NROM device is then programmed at its right bit. A threshold voltage difference will be obtained for the ultra cycling NROM device for the un-programmed left bit. Next, a cycling number is obtained based on the threshold voltage difference for the ultra cycling NROM device. A threshold voltage shift can be found based on the cycling number for the NROM array. Finally, an erase voltage will be calculated according to the threshold voltage shift for the NROM array. If the NROM array is programmed again, the erase voltage will be applied to un-programmed NROM devices of the NROM array to further reduce the threshold voltages.
摘要翻译：超循环氮化物只读存储器（NROM）器件耦合到NROM阵列，使得当NROM阵列的所有NROM器件被擦除时，超循环NROM器件的两个位将被擦除。然后在其右侧编程超循环NROM设备。对于非编程左位的超循环NROM器件，将获得阈值电压差。接下来，基于超循环NROM装置的阈值电压差来获得循环次数。可以基于NROM阵列的循环次数找到阈值电压偏移。最后，将根据NROM阵列的阈值电压偏移计算擦除电压。如果NROM阵列再次被编程，则擦除电压将被施加到NROM阵列的未编程的NROM器件，以进一步降低阈值电压。

88. 发明授权

US06751489B2 High temperature superconductor mini-filters and mini-multiplexers with self-resonant spiral resonators 失效
标题翻译：具有自谐振螺旋谐振器的高温超导体微型滤波器和微型多路复用器
公开(公告)号：US06751489B2
公开(公告)日：2004-06-15
申请号：US10051912
申请日：2002-01-17
申请人： Zhi-Yuan Shen
发明人： Zhi-Yuan Shen
IPC分类号： H01P1213
CPC分类号： H01P1/20381 , H01P1/2135 , H01P7/082 , H01P7/084 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： High temperature superconductor mini-filters and mini-multiplexers utilize self-resonant spiral resonators and have very small size and very low cross-talk between adjacent channels.
摘要翻译：高温超导体微型滤波器和微型多路复用器采用自谐振螺旋谐振器，具有非常小的尺寸和相邻通道之间非常低的串扰。

89. 发明授权

US06711912B2 Cryogenic devices 失效
标题翻译：低温装置
公开(公告)号：US06711912B2
公开(公告)日：2004-03-30
申请号：US10187548
申请日：2002-07-02
申请人： Daniel B. Laubacher , Zhi-Yuan Shen , Philip Shek Wah Pang , Alan Lauder , Dean Face
发明人： Daniel B. Laubacher , Zhi-Yuan Shen , Philip Shek Wah Pang , Alan Lauder , Dean Face
IPC分类号： F25D2312
CPC分类号： H01P1/30
摘要： This invention relates generally to cryogenic devices and, more particularly, to cryogenic devices of very small size based on superconducting elements, low thermal transmission interconnects and low dissipated power semiconductor.
摘要翻译：本发明一般涉及低温装置，尤其涉及基于超导元件，低热传导互连和低耗散功率半导体的非常小尺寸的低温装置。

90. 发明授权

US4861955A Matched absorptive end choke for microwave applicators 失效
标题翻译：微波加热器匹配吸收端扼流圈
公开(公告)号：US4861955A
公开(公告)日：1989-08-29
申请号：US71413
申请日：1987-07-09
申请人： Zhi-Yuan Shen
发明人： Zhi-Yuan Shen
IPC分类号： H05B6/76
CPC分类号： H05B6/78 , H05B6/76
摘要： A microwave application chamber including a reactive and absorptive choke is shown and described. The absorptive choke is made of a material having the same or close dielectric constant as the material being treated so that microwave energy will pass readily from the material being treated into the absorptive choke. The interface between the absorptive choke and the material being treated is essentially transparent to microwave without reflections. This transparency permits microwave energy to be absorbed in the absorptive choke which otherwise would follow the waveguide created by the material being treated and exit into the environment.

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