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1. 发明申请

US20080084759A1 Nitride trapping memory device and method for reading the same 有权
标题翻译：氮化物捕获存储器件及其读取方法
公开(公告)号：US20080084759A1
公开(公告)日：2008-04-10
申请号：US11987240
申请日：2007-11-28
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.
摘要翻译：氮化物捕获存储器件包括比较器，偏置单元，存储单元，循环单元，补偿单元和控制单元。比较器具有参考电压。偏置单元用于向比较器输出偏置电压，并且比较器根据偏置电压和参考电压的比较输出位值。存储单元经由第一开关连接到偏置单元。循环电池通过第二开关连接到偏置单元。补偿单元经由第三开关连接到偏置单元。控制单元用于根据位值控制循环单元和补偿单元。

2. 发明授权

US07262999B2 System and method for preventing read margin degradation for a memory array 有权
标题翻译：用于防止存储器阵列的读取容限劣化的系统和方法
公开(公告)号：US07262999B2
公开(公告)日：2007-08-28
申请号：US10997114
申请日：2004-11-24
申请人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
发明人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/349 , G11C16/0475
摘要： An ultra cycling nitride read only memory (NROM) device is coupled to a NROM array such that both bits of the ultra cycling NROM device will be erased when all NROM devices of the NROM array are erased. The ultra cycling NROM device is then programmed at its right bit. A threshold voltage difference will be obtained for the ultra cycling NROM device for the un-programmed left bit. Next, a cycling number is obtained based on the threshold voltage difference for the ultra cycling NROM device. A threshold voltage shift can be found based on the cycling number for the NROM array. Finally, an erase voltage will be calculated according to the threshold voltage shift for the NROM array. If the NROM array is programmed again, the erase voltage will be applied to un-programmed NROM devices of the NROM array to further reduce the threshold voltages.
摘要翻译：超循环氮化物只读存储器（NROM）器件耦合到NROM阵列，使得当NROM阵列的所有NROM器件被擦除时，超循环NROM器件的两个位将被擦除。然后在其右侧编程超循环NROM设备。对于非编程左位的超循环NROM器件，将获得阈值电压差。接下来，基于超循环NROM装置的阈值电压差来获得循环次数。可以基于NROM阵列的循环次数找到阈值电压偏移。最后，将根据NROM阵列的阈值电压偏移计算擦除电压。如果NROM阵列再次被编程，则擦除电压将被施加到NROM阵列的未编程的NROM器件，以进一步降低阈值电压。

3. 发明授权

US07310261B2 Nitride read-only memory (NROM) device and method for reading the same 有权
标题翻译：氮化物只读存储器（NROM）器件及其读取方法
公开(公告)号：US07310261B2
公开(公告)日：2007-12-18
申请号：US11441250
申请日：2006-05-26
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C17/00
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride read-only memory (NROM) device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.
摘要翻译：氮化物只读存储器（NROM）器件包括比较器，偏置单元，存储单元，循环单元，补偿单元和控制单元。比较器具有参考电压。偏置单元用于向比较器输出偏置电压，并且比较器根据偏置电压和参考电压的比较输出位值。存储单元经由第一开关连接到偏置单元。循环电池通过第二开关连接到偏置单元。补偿单元经由第三开关连接到偏置单元。控制单元用于根据位值控制循环单元和补偿单元。

4. 发明申请

US20080205135A1 Method of reading the bits of nitride read-only memory cell 有权
标题翻译：读取氮化物只读存储单元的位的方法
公开(公告)号：US20080205135A1
公开(公告)日：2008-08-28
申请号：US12149350
申请日：2008-04-30
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C16/06 , G11C7/00
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.
摘要翻译：氮化物捕获存储器件包括比较器，偏置单元，存储单元，循环单元，补偿单元和控制单元。比较器具有参考电压。偏置单元用于向比较器输出偏置电压，并且比较器根据偏置电压和参考电压的比较输出位值。存储单元经由第一开关连接到偏置单元。循环电池通过第二开关连接到偏置单元。补偿单元经由第三开关连接到偏置单元。控制单元用于根据位值控制循环单元和补偿单元。

5. 发明授权

US07411833B2 Nitride trapping memory device and method for reading the same 有权
公开(公告)号：US07411833B2
公开(公告)日：2008-08-12
申请号：US11987240
申请日：2007-11-28
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C11/34
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.

6. 发明授权

US07710784B2 Method of reading the bits of nitride read-only memory cell 有权
标题翻译：读取氮化物只读存储单元的位的方法
公开(公告)号：US07710784B2
公开(公告)日：2010-05-04
申请号：US12149350
申请日：2008-04-30
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C11/34
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.
摘要翻译：氮化物捕获存储器件包括比较器，偏置单元，存储单元，循环单元，补偿单元和控制单元。比较器具有参考电压。偏置单元用于向比较器输出偏置电压，并且比较器根据偏置电压和参考电压的比较输出位值。存储单元经由第一开关连接到偏置单元。循环电池通过第二开关连接到偏置单元。补偿单元经由第三开关连接到偏置单元。控制单元用于根据位值控制循环单元和补偿单元。

7. 发明申请

US20060268617A1 Nitride read-only memory (NROM) device and method for reading the same 有权
标题翻译：氮化物只读存储器（NROM）器件及其读取方法
公开(公告)号：US20060268617A1
公开(公告)日：2006-11-30
申请号：US11441250
申请日：2006-05-26
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride read-only memory (NROM) device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.
摘要翻译：氮化物只读存储器（NROM）器件包括比较器，偏置单元，存储单元，循环单元，补偿单元和控制单元。比较器具有参考电压。偏置单元用于向比较器输出偏置电压，并且比较器根据偏置电压和参考电压的比较输出位值。存储单元经由第一开关连接到偏置单元。循环电池通过第二开关连接到偏置单元。补偿单元经由第三开关连接到偏置单元。控制单元用于根据位值控制循环单元和补偿单元。

8. 发明申请

US20060109718A1 System and method for preventing read margin degradation for a memory array 有权
标题翻译：用于防止存储器阵列的读取容限劣化的系统和方法
公开(公告)号：US20060109718A1
公开(公告)日：2006-05-25
申请号：US10997114
申请日：2004-11-24
申请人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
发明人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
IPC分类号： G11C16/04
CPC分类号： G11C16/349 , G11C16/0475
摘要： An ultra cycling nitride read only memory (NROM) device is coupled to a NROM array such that both bits of the ultra cycling NROM device will be erased when all NROM devices of the NROM array are erased. The ultra cycling NROM device is then programmed at its right bit. A threshold voltage difference will be obtained for the ultra cycling NROM device for the un-programmed left bit. Next, a cycling number is obtained based on the threshold voltage difference for the ultra cycling NROM device. A threshold voltage shift can be found based on the cycling number for the NROM array. Finally, an erase voltage will be calculated according to the threshold voltage shift for the NROM array. If the NROM array is programmed again, the erase voltage will be applied to un-programmed NROM devices of the NROM array to further reduce the threshold voltages.
摘要翻译：超循环氮化物只读存储器（NROM）器件耦合到NROM阵列，使得当NROM阵列的所有NROM器件被擦除时，超循环NROM器件的两个位将被擦除。然后在其右侧编程超循环NROM设备。对于非编程左位的超循环NROM器件，将获得阈值电压差。接下来，基于超循环NROM装置的阈值电压差来获得循环次数。可以基于NROM阵列的循环次数找到阈值电压偏移。最后，将根据NROM阵列的阈值电压偏移计算擦除电压。如果NROM阵列再次被编程，则擦除电压将被施加到NROM阵列的未编程的NROM器件，以进一步降低阈值电压。

9. 发明授权

US08308596B2 Transmission mechanism with intermittent output movement 有权
标题翻译：具有间歇输出运动的传动机构
公开(公告)号：US08308596B2
公开(公告)日：2012-11-13
申请号：US12606774
申请日：2009-10-27
申请人： Der-Min Tsay , Hsin-Pao Chen , Hsien-Wen Hsu , Chih-Wei Huang
发明人： Der-Min Tsay , Hsin-Pao Chen , Hsien-Wen Hsu , Chih-Wei Huang
IPC分类号： F16H35/02 , F16H37/12
CPC分类号： F16H37/12 , F16H35/02 , Y10T74/19186
摘要： A transmission mechanism with intermittent output movement includes an output shaft rotatably mounted to first and second cams and a sun gear mounted to the output shaft. A first rocker includes a first planet gear meshed with the sun gear and first and second rollers rotatably mounted on opposite sides of the first planet gear and respectively in contact with the first and second cams. A second rocker includes a second planet gear meshed with the sun gear. An end of a first connecting rod is mounted to the first rocker. An end of a second connecting rod is mounted to the second rocker. Two ends of a link are rotatably mounted to the other ends of the first and second connecting rods. A planet gear carrier is mounted to an input shaft coaxial to the input shaft and includes an end rotatably mounted to the first rocker.
摘要翻译：具有间歇输出运动的传动机构包括可旋转地安装到第一和第二凸轮的输出轴和安装到输出轴的太阳齿轮。第一摇杆包括与太阳齿轮啮合的第一行星齿轮和可旋转地安装在第一行星齿轮的相对侧上且分别与第一和第二凸轮接触的第一和第二辊。第二摇臂包括与太阳齿轮啮合的第二行星齿轮。第一连杆的端部安装在第一摇臂上。第二连杆的端部安装在第二摇臂上。连杆的两端可旋转地安装在第一和第二连杆的另一端上。行星齿轮架被安装到与输入轴同轴的输入轴上，并包括可旋转地安装到第一摇杆上的端部。

10. 发明申请

US20090039497A1 SEMICONDUCTOR DEVICE PACKAGE HAVING A BACK SIDE PROTECTIVE SCHEME 有权
公开(公告)号：US20090039497A1
公开(公告)日：2009-02-12
申请号：US11933758
申请日：2007-11-01
申请人： Wen-Kun Yang , Hsien-Wen Hsu
发明人： Wen-Kun Yang , Hsien-Wen Hsu
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： H01L23/3114 , H01L23/3157 , H01L23/562 , H01L2224/16 , H01L2224/274 , H01L2924/01087
摘要： The present invention provides a semiconductor device package, comprising a die having a back surface and an active surface formed thereon; an adhesive layer formed on the back surface of the die; a protection substrate formed on the adhesive layer; and a plurality of bumps formed on the active surface of the die for electrically connection. The present invention further provides a method for forming a semiconductor device package, comprising providing a plurality of die having a back surface and an active surface on a wafer; forming an adhesive layer on the back surface of the die; forming a protection substrates on the adhesive layer; forming a plurality of bumps on the active surface of each die; and dicing the plurality of die into individual die for singulation.

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