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71. 发明申请

US20150137899A1 RESONATOR ELEMENT, RESONATOR, OSCILLATOR, ELECTRONIC DEVICE AND MOBILE OBJECT 有权
标题翻译：谐振器元件，谐振器，振荡器，电子设备和移动对象
公开(公告)号：US20150137899A1
公开(公告)日：2015-05-21
申请号：US14540578
申请日：2014-11-13
申请人： SEIKO EPSON CORPORATION
发明人： Akinori YAMADA
IPC分类号： H03H9/215 , H03B5/30
CPC分类号： H03H9/215 , H01L41/053 , H03B5/32 , H03H3/04 , H03H9/02157 , H03H9/0547 , H03H2003/0407
摘要： A resonator element includes a quartz crystal resonator blank provided with a base portion, vibrating arms extending from one end side of the base portion, a connecting portion which is disposed on the other end side of the base portion, and a coupling portion, located between the base portion and the connecting portion, which couples the base portion to the connecting portion. When a thickness of the quartz crystal resonator blank is set to T, a width of the base portion is set to W1, and a width of the coupling portion is set to W2, a relation of 110 μm≦T≦210 μm is satisfied, and a relation of 0.469≦W2/W1≦0.871 is satisfied.
摘要翻译：谐振器元件包括设置有基部的石英晶体谐振器坯料，从基部的一端侧延伸的振动臂，设置在基部的另一端侧的连接部，以及连接部，位于所述基部和所述连接部将所述基部连接到所述连接部。当将石英晶体谐振器坯件的厚度设定为T时，将基部的宽度设定为W1，将连结部的宽度设定为W2，则满足关系式为110μm＆lt; 1lE; T＆nlE;210μm，满足0.469＆nlE; W2 / W1＆nlE; 0.871的关系。

72. 发明授权

US09035536B2 Piezoelectric thin-film resonator and method for manufacturing the same 有权
标题翻译：压电薄膜谐振器及其制造方法
公开(公告)号：US09035536B2
公开(公告)日：2015-05-19
申请号：US13563505
申请日：2012-07-31
申请人： Masanori Ueda , Shinji Taniguchi , Tokihiro Nishihara
发明人： Masanori Ueda , Shinji Taniguchi , Tokihiro Nishihara
IPC分类号： H01L41/09 , H03H3/04 , H03H9/17 , H03H3/02
CPC分类号： H03H3/04 , H03H9/171 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H03H2003/0407 , Y10T29/42
摘要： A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film.
摘要翻译：压电薄膜谐振器包括：设置在基板上的下电极; 压电膜，其设置在所述下电极上并且包括至少两层; 上部电极，其设置在所述压电膜上，并且具有将所述压电膜与所述下部电极夹在中间且与所述下部电极相对的区域; 以及绝缘膜，其设置在所述下电极和所述上电极彼此面对并且在所述至少两层中的每一个之间的区域中，其中所述绝缘膜的上表面比所述绝缘膜的下表面平坦。

73. 发明申请

US20140375177A1 RESONATOR ELEMENT, RESONATOR, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND MOVING OBJECT 有权
标题翻译：谐振器元件，谐振器，电子设备，电子设备和移动对象
公开(公告)号：US20140375177A1
公开(公告)日：2014-12-25
申请号：US14313468
申请日：2014-06-24
申请人： SEIKO EPSON CORPORATION
发明人： Akinori YAMADA , Shuhei YOSHIDA
IPC分类号： H03H9/21
CPC分类号： H03H9/21 , H03H9/0542 , H03H2003/028 , H03H2003/0407
摘要： A resonator element includes: a base portion including a first end surface that faces a first direction and a second end surface that faces a direction opposite to the first direction, a first vibrating arm that is provided integrally with the base portion and is connected to the first end surface; and a second vibrating arm that is provided integrally with the base portion along the first vibrating arm and is connected to the first end surface. When the shortest distance between the first end surface and the second end surface is Wb and an effective width between the shortest distance Wb and the base portion is We, 0.81≦Wb/We≦1.70 is satisfied.
摘要翻译：谐振器元件包括：基部，其包括面向第一方向的第一端面和面向与第一方向相反的方向的第二端面;第一振动臂，与所述基部一体设置并连接到第一端面; 以及第二振动臂，其与所述基部沿着所述第一振动臂一体设置并且连接到所述第一端面。当第一端面和第二端面之间的最短距离为Wb且最短距离Wb与基部之间的有效宽度为We时，满足0.81＆nlE; Wb / We＆nlE; 1.70。

74. 发明授权

US08724431B2 First and second orders temperature-compensated resonator 有权
标题翻译：第一和第二阶温度补偿谐振器
公开(公告)号：US08724431B2
公开(公告)日：2014-05-13
申请号：US13156648
申请日：2011-06-09
申请人： Thierry Hessler , Silvio Dalla Piazza
发明人： Thierry Hessler , Silvio Dalla Piazza
IPC分类号： G04F1/04
CPC分类号： H03H9/02448 , G04F5/063 , H03H9/02023 , H03H9/02102 , H03H9/215 , H03H2003/027 , H03H2003/0407 , H03H2009/241
摘要： A temperature-compensated resonator includes a body used in deformation, wherein the core (58, 58′, 18) of the body (3, 5, 7, 15, 23, 25, 27, 33, 35, 37, 43, 45, 47) is formed from a plate formed at a cut angle (θ′) in a quartz crystal determining the first and second orders temperature coefficients (α, β, α′, β′). According to the invention, the body (3, 5, 7, 15, 23, 25, 27, 33, 35, 37, 43, 45, 47) includes a coating (52, 54, 56, 52′, 54′, 56′, 16) deposited at least partially on the core (58, 58′, 18) and having first and second orders Young's modulus variations (CTE1, CTE2, CTE1′, CTE2′) according to temperature of opposite signs respectively to the first and second orders temperature coefficients (α, β, α′, β′) of the resonator so as to render compensated first and second orders temperature coefficients substantially zero.
摘要翻译：温度补偿谐振器包括用于变形的主体，其中主体（3,5,7,15,23,25,27,33,35,37,43,45）的芯体（58,58'，18），47）由在确定第一和第二阶温度系数（α，＆bgr;α'，＆bgr''）的石英晶体中以切割角度形成的板（“the”s“）形成。根据本发明，身体（3,5,7,15,23,25,27,33,35,37,43,45,47）包括涂层（52,54,56,52'，54'， 56'，16）至少部分地沉积在所述芯部（58,58'，18）上，并且具有根据相反符号的温度的第一和第二阶次杨氏模量变化（CTE1，CTE2，CTE1'，CTE2'）到第一和谐振器的第二阶温度系数（α，＆bgr;α'，＆bgr“），以使补偿的第一和第二阶温度系数基本上为零。

75. 发明申请

US20100327701A1 Piezoelectric resonator structures having temperature compensation 有权
标题翻译：具有温度补偿的压电谐振器结构
公开(公告)号：US20100327701A1
公开(公告)日：2010-12-30
申请号：US12494886
申请日：2009-06-30
申请人： Kevin J. Grannen , Carrie A. Rogers , John Choy
发明人： Kevin J. Grannen , Carrie A. Rogers , John Choy
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/02102 , H01L41/18 , H03H3/04 , H03H9/173 , H03H9/583 , H03H9/587 , H03H2003/021 , H03H2003/0407 , H03H2003/0442 , Y10T29/42
摘要： An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).
摘要翻译：电谐振器包括包括空腔的基板。电谐振器包括悬挂在空腔上的谐振器堆叠。谐振器堆叠包括第一电极; 第二电极; 压电层; 和包含硼硅酸盐玻璃（BSG）的温度补偿层。

76. 发明授权

US07129624B2 Crystal unit 有权
标题翻译：水晶单位
公开(公告)号：US07129624B2
公开(公告)日：2006-10-31
申请号：US11035313
申请日：2005-01-13
申请人： Mitoshi Umeki , Kenichi Kikuchi , Keisuke Hirano
发明人： Mitoshi Umeki , Kenichi Kikuchi , Keisuke Hirano
IPC分类号： H01L41/08
CPC分类号： H03H9/171 , H03H3/04 , H03H9/131 , H03H9/132 , H03H2003/0407
摘要： A crystal unit comprises an AT-cut crystal blank, and an excitation electrode formed on each of opposing main surfaces of the crystal blank in an oscillation region of the crystal blank. The ratio b/a is 0.014 or less, and preferably 0.012 or less where a represents the thickness of the crystal blank in the oscillation region and b represents the thickness of the excitation electrode. The thickness a is typically 5 μm or less.
摘要翻译：晶体单元包括AT切割晶体坯和在晶体坯的振荡区域中在晶体坯的相对的主表面上形成的激励电极。比率b / a为0.014以下，优选为0.012以下，其中a表示振荡区域中的结晶坯的厚度，b表示激发电极的厚度。厚度a通常为5um或更小。

77. 发明申请

US20060236525A1 High intensity ultrasound transducers and methods and devices for manufacturing high intensity ultrasound transducers 有权
标题翻译：高强度超声波换能器以及用于制造高强度超声换能器的方法和装置
公开(公告)号：US20060236525A1
公开(公告)日：2006-10-26
申请号：US11104294
申请日：2005-04-11
申请人： Jack Sliwa , Jonathan Podmore , Chris Bagley , John Crowe , Michael Holzbaur , Derek Hillstrom , Steve Schellenberg , Peter Goetz , Stephen Morse
发明人： Jack Sliwa , Jonathan Podmore , Chris Bagley , John Crowe , Michael Holzbaur , Derek Hillstrom , Steve Schellenberg , Peter Goetz , Stephen Morse
IPC分类号： H04R31/00
CPC分类号： H03H3/04 , B06B1/06 , B23K26/351 , B23K2101/36 , G01N29/245 , H03H3/02 , H03H3/08 , H03H2003/0407 , H03H2003/045 , H04R31/00 , Y10T29/42 , Y10T29/49004 , Y10T29/49005
摘要： A method of manufacturing an ultrasound transducer is provided. The ultrasound transducer is activated and the activity across the transducer is measured to determine whether the activity at any area does not meet an acceptance criteria. The transducer is then modified so that the area meets the acceptance criteria. The transducer may be modified with a laser which removes material from the area which does not meet the accceptance criteria.
摘要翻译：提供一种制造超声换能器的方法。激活超声换能器，测量换能器的活动，以确定任何区域的活动是否不符合验收标准。然后对传感器进行修改，使得该区域满足接受标准。传感器可以用激光器进行修改，该激光器从不符合接受标准的区域去除材料。

78. 发明申请

US20040164648A1 Piezoelectric resonator, filter, and electronic communication device 失效
标题翻译：压电谐振器，滤波器和电子通信装置
公开(公告)号：US20040164648A1
公开(公告)日：2004-08-26
申请号：US10785284
申请日：2004-02-24
申请人： Murata Manufacturing Co., Ltd.
发明人： Masaki Takeuchi , Hajime Yamada , Yoshihiko Goto , Tadashi Nomura , Yukio Yoshino
IPC分类号： H01L041/08
CPC分类号： H03H9/174 , H03H3/04 , H03H9/0207 , H03H9/173 , H03H2003/0407
摘要： A piezoelectric resonator includes a substrate, a vibration unit disposed on the substrate and having a structure in which at least one pair of an upper electrode and a lower electrode opposed to each other, the upper and lower electrodes sandwiching the upper and lower surfaces of an internal thin-film portion including at least one layer of a piezoelectric thin-film, and an external thin-film portion provided under the lower electrode and including at least one layer of a piezoelectric thin-film or a dielectric thin-film, the vibration unit being vibrated in an n-th harmonic (n is an integer of 2 or more), the upper electrode and the lower electrode being provided substantially in the positions of the loops of the n-th harmonic.
摘要翻译：压电谐振器包括基板，设置在基板上的振动单元，具有这样的结构，其中至少一对上电极和下电极彼此相对，上电极和下电极夹着上表面和下表面包括至少一层压电薄膜的内部薄膜部分和设置在所述下部电极下方并且包括至少一层压电薄膜或电介质薄膜的外部薄膜部分，所述振动单元以n次谐波（n为2以上的整数）振动，上部电极和下部电极基本上设置在n次谐波的环路的位置。

79. 发明授权

US12143093B2 Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device 有权
公开(公告)号：US12143093B2
公开(公告)日：2024-11-12
申请号：US18352972
申请日：2023-07-14
申请人： Soitec
发明人： Marcel Broekaart , Thierry Barge , Pascal Guenard , Ionut Radu , Eric Desbonnets , Oleg Kononchuk
IPC分类号： H03H9/02 , A61B5/00 , A61B5/145 , A61B5/1459 , H03H3/02 , H03H3/04 , H03H3/10 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/25 , H03H9/56 , H03H9/64 , H10N30/072 , H10N30/085 , H10N30/87 , H10N39/00
CPC分类号： H03H9/02834 , A61B5/14546 , A61B5/1459 , A61B5/685 , H03H3/02 , H03H3/04 , H03H3/10 , H03H9/02102 , H03H9/02574 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/25 , H03H9/56 , H03H9/6489 , H10N30/072 , H10N30/87 , H10N39/00 , A61B2562/0204 , H03H2003/0407 , H10N30/085
摘要： A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

80. 发明授权

US11942919B2 Strain compensated rare earth group III-nitride heterostructures 有权
公开(公告)号：US11942919B2
公开(公告)日：2024-03-26
申请号：US17145665
申请日：2021-01-11
申请人： Raytheon Company
发明人： John A. Logan , Jason C. Soric , Adam E. Peczalski , Brian D. Schultz , Eduardo M. Chumbes
IPC分类号： H03H9/02 , H03H3/04 , H03H9/17 , H03H3/02
CPC分类号： H03H9/02133 , H03H3/04 , H03H9/02031 , H03H9/02102 , H03H9/174 , H03H9/176 , H03H2003/023 , H03H2003/0407
摘要： A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.

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