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71. 发明授权

US5872023A Method of fabricating of light emitting device with controlled lattice mismatch 失效
标题翻译：具有受控晶格失配的发光器件的制造方法
公开(公告)号：US5872023A
公开(公告)日：1999-02-16
申请号：US829214
申请日：1997-03-31
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327 , H01S3/19
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成作为S，Se，Te。第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

72. 发明授权

US5695556A Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination 失效
标题翻译：化合物半导体层的临界膜厚的测定，以及使用该测定方法制造半导体器件的方法
公开(公告)号：US5695556A
公开(公告)日：1997-12-09
申请号：US555834
申请日：1995-11-13
申请人： Koshi Tamamura , Hironori Tsukamoto , Masaharu Nagai , Masao Ikeda
发明人： Koshi Tamamura , Hironori Tsukamoto , Masaharu Nagai , Masao Ikeda
IPC分类号： C30B25/16 , H01L21/66 , H01L33/06 , H01L33/28 , H01L33/30 , H01S5/00
CPC分类号： C30B25/16 , H01L22/12 , H01L2924/0002
摘要： By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured. The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated. When a semiconductor device is manufactured, a compound semiconductor layer is formed so as that the thickness of the layer is thinner than the critical film thickness determined from the equation.
摘要翻译：通过应用该方法，确定化合物半导体层的临界膜厚度，制造具有发光性能优异的膜厚化合物半导体层的半导体装置。化合物半导体层的膜厚与膜厚对应的光致发光（PL）之间的关系是通过测量获得的，其中PL表现出峰值的膜厚度被指定为临界膜厚度。半导体层包含至少含有镉的II-VI族化合物半导体层。通过测量获得临界膜厚度和镉组成比之间的关系。制定近似临界膜厚度和镉组成比之间关系的方程式。当制造半导体器件时，形成化合物半导体层，使得层的厚度比由等式确定的临界膜厚度薄。

73. 发明授权

US5234842A Method of producing p-typed CdS 失效
标题翻译：生产p型CdS的方法
公开(公告)号：US5234842A
公开(公告)日：1993-08-10
申请号：US848128
申请日：1992-03-09
申请人： Hiroyuki Okuyama , Katsuhiro Akimoto , Masao Ikeda
发明人： Hiroyuki Okuyama , Katsuhiro Akimoto , Masao Ikeda
IPC分类号： H01L21/36 , H01L21/425 , H01L29/227 , H01L31/0296 , H01L33/28 , H01L33/30 , H01S5/00
CPC分类号： H01L33/285 , H01L21/425 , H01L29/227 , H01L31/02963 , H01L33/0087
摘要： A method of producing a p-type CdS wherein oxygen is doped into a CdS layer at a concentration in a range between 10.sup.16 and 10.sup.19 atomic/cm.sup.3.
摘要翻译：一种生产p型CdS的方法，其中将氧以1016和1019原子/ cm3之间的浓度掺杂到CdS层中。

74. 发明授权

US5041335A Undercoat composition and a metal substrate coated with a resin composition 失效
标题翻译：底涂层组合物和涂有树脂组合物的金属基材
公开(公告)号：US5041335A
公开(公告)日：1991-08-20
申请号：US279602
申请日：1988-12-05
申请人： Toshimi Inai , Koichi Karukaya , Masao Ikeda , Kazuyoshi Yamamoto
发明人： Toshimi Inai , Koichi Karukaya , Masao Ikeda , Kazuyoshi Yamamoto
IPC分类号： C08L65/00 , C08L81/02 , C08L81/06 , C09D5/00 , C09D165/00 , C09D181/02 , C09D181/06
CPC分类号： C09D181/02 , C08L65/00 , C08L81/02 , C08L81/06 , C09D165/00 , C09D181/06 , C09D5/002 , Y10S525/906 , Y10T428/31522 , Y10T428/31533 , Y10T428/31681 , Y10T428/31688
摘要： There are provided an undercoat composition with excellent adhesiveness to both a resin coating layer and a metal layer, and a metal substrate coated with a resin composition. The undercoat composition and the resin-coated metal substrate offer excellent hot-water resistance and chemical resistance.

75. 发明授权

US4740977A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4740977A
公开(公告)日：1988-04-26
申请号：US889961
申请日：1986-07-28
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： H01S5/00 , H01S5/024 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/02461 , H01S5/32325 , H01S5/02272 , H01S5/3211
摘要： A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.
摘要翻译：与半导体激光器件相比，与有源层相邻的有源层和具有高导热性的AlGaAs层相比，包层中的至少一个由具有较大能带隙的薄AlGaInP层形成，的AlGaInP层和与位于AlGaInP层和散热片之间的有源层相比较大的能带隙，由此在有源层中产生的热量有效地辐射到散热器，因此半导体激光器能够在室温下连续地发射短波长的激光。

76. 发明授权

US4082744A 4-Benzazonine derivatives and process for preparation thereof 失效
标题翻译： 4-苯并噻吩衍生物及其制备方法
公开(公告)号：US4082744A
公开(公告)日：1978-04-04
申请号：US707276
申请日：1976-07-21
申请人： Masao Ikeda , Shigeo Miyamoto , Thutomu Nozawa , Akira Kurobe , Osamu Futsukaichi
发明人： Masao Ikeda , Shigeo Miyamoto , Thutomu Nozawa , Akira Kurobe , Osamu Futsukaichi
IPC分类号： C07D223/14 , C07D225/06 , C07D225/08
CPC分类号： C07D223/14 , C07D225/06 , Y10S514/849
摘要： Novel 4-benzazonine derivatives and their salts, and processes for the preparation thereof are disclosed. These 4-benzazonine derivatives are represented by the following general formula: ##STR1## wherein R stands for --H, --OH or a lower alkoxy group such as --OCH.sub.3, R.sub.1 designates --H or a lower alkyl group such as --CH.sub.3 and --CH.sub.2 CH.sub.3, R.sub.2 indicates --H or a lower alkyl group such as --CH.sub.3, R.sub.3 stands for --H, a linear or branched, saturated or unsaturated alkyl group having 1 to 4 carbon atoms, a mono- or di-hydroxy lower alkyl group such as --CH.sub.2 OH and ##STR2## a saturated cyclic hydrocarbon group having 3 to 6 carbon atoms or a substituted or unsubstituted aromatic hydrocarbon group having 6 to 8 carbon atoms, and R.sub.4 designates --H, --OH or .dbd. 0. These compounds have medicinal effects, especially therapeutic activities on the central nervous system, such as analgesic, antitussive and sedative activities.

77. 发明授权

US08329483B2 Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 有权
标题翻译：双段半导体激光装置及其制造方法及其驱动方法
公开(公告)号：US08329483B2
公开(公告)日：2012-12-11
申请号：US12726524
申请日：2010-03-18
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01L21/00
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译：一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

78. 发明申请

US20120281726A1 BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME 有权
标题翻译：双分半导体激光器件，其制造方法及其驱动方法
公开(公告)号：US20120281726A1
公开(公告)日：2012-11-08
申请号：US13553380
申请日：2012-07-19
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01S5/02
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译：一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

79. 发明申请

US20120220902A1 INNER DIAMETER MEASUREMENT INSTRUMENT AND PRIMING METHOD THEREFOR 审中-公开
标题翻译：内径测量仪器及其制作方法
公开(公告)号：US20120220902A1
公开(公告)日：2012-08-30
申请号：US13505565
申请日：2010-11-19
申请人： Hiroaki Hashido , Masao Ikeda
发明人： Hiroaki Hashido , Masao Ikeda
IPC分类号： A61B5/107
CPC分类号： A61B5/08 , A61B5/1076 , A61B5/6853 , A61B17/12045 , A61M25/10181 , A61M25/10185 , G01B13/10
摘要： An inner diameter measurement instrument (100) includes a first channel (120) and a second channel (140) respectively communicating with a balloon (110), a fluid injection mechanism (130), a fluid lock mechanism (150), and an amount measurement unit (160). The fluid injection mechanism (130) injects an incompressible fluid into the balloon (110) through the first channel (120) or the second channel (140). The fluid lock mechanism (150) closes the first channel (120) or the second channel (140). The amount measurement unit (160) measures the amount of an incompressible measurement fluid additionally injected after the balloon (110), the first channel (120), and the second channel (140) are filled with the fluid and the fluid lock mechanism (150) closes one of the first channel (120) and the second channel (140), by the fluid injection mechanism (130) through the other of the first channel (120) and the second channel (140).
摘要翻译：内径测量仪器（100）包括分别与球囊（110），流体注射机构（130），流体锁定机构（150）连通的第一通道（120）和第二通道（140）测量单元（160）。流体注入机构（130）通过第一通道（120）或第二通道（140）将不可压缩流体注入气囊（110）。流体锁定机构（150）关闭第一通道（120）或第二通道（140）。量测量单元（160）测量在气球（110），第一通道（120）和第二通道（140）之后被流体和流体锁定机构（150）填充的另外注入的不可压缩测量流体的量）通过流体注入机构（130）通过第一通道（120）和第二通道（140）中的另一个封闭第一通道（120）和第二通道（140）中的一个。

80. 发明授权

US08080434B2 Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer 有权
标题翻译：氧化物半导体层的无损检测方法及氧化物半导体层的制造方法
公开(公告)号：US08080434B2
公开(公告)日：2011-12-20
申请号：US12622095
申请日：2009-11-19
申请人： Norihiko Yamaguchi , Satoshi Taniguchi , Masao Ikeda
发明人： Norihiko Yamaguchi , Satoshi Taniguchi , Masao Ikeda
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , G01N21/6489
摘要： A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and measuring an intensity of photoluminescence in a wavelength region longer than a wavelength corresponding to a bandgap energy among light emitted from the target oxide semiconductor layer; and estimating a film property of the target oxide semiconductor layer on the basis of measurement results.
摘要翻译：氧化物半导体层的非破坏性测试方法包括以下步骤：向待测试的非晶或多晶目标氧化物半导体层施加激发光，并测量在比发射的光的带隙能量长的波长区域中的光致发光强度从目标氧化物半导体层; 并基于测量结果估计目标氧化物半导体层的膜性质。

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