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71. 发明授权

US08785926B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08785926B2
公开(公告)日：2014-07-22
申请号：US13860879
申请日：2013-04-11
申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
发明人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/78696
摘要： The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.
摘要翻译：半导体导体器件包括栅电极106，氧化物半导体膜110，源极114a和漏电极114b以及形成在氧化物半导体膜中的沟道区。沟道区形成在源电极的第一侧表面214a和与第一侧表面214a相对的漏电极的第二侧表面214b之间。氧化物半导体膜具有与栅电极重叠的侧面，该侧面具有位于最靠近第一侧面214a的一端314a的第一区域206a和位于第一侧面214a的一端314a的第一区域206a之间的第一高电阻区域，最靠近第二侧表面214b的一端314b。第一高电阻区域具有波纹状的侧面等。

72. 发明申请

US20130270555A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130270555A1
公开(公告)日：2013-10-17
申请号：US13861587
申请日：2013-04-12
申请人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
发明人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02172 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.
摘要翻译：目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。氧化物半导体膜在X射线衍射测定中具有在31°附近的旋转角2θ处的峰值。

73. 发明申请

US20110146340A1 Method of recovering carbon dioxide from gas and apparatus therefor 审中-公开
标题翻译：从天然气中回收二氧化碳的方法及其设备
公开(公告)号：US20110146340A1
公开(公告)日：2011-06-23
申请号：US12311350
申请日：2006-09-29
申请人： Yoshitaka Yamamoto , Taro Kawamura , Kazuo Uchida , Hajime Kanda , Susumu Tanaka , Osamu Takano
发明人： Yoshitaka Yamamoto , Taro Kawamura , Kazuo Uchida , Hajime Kanda , Susumu Tanaka , Osamu Takano
IPC分类号： F25J1/00
CPC分类号： B01D53/62 , B01D53/79 , B01D2257/504 , Y02C10/04
摘要： Provided is a method including the steps of: cooling exhaust gas to a given temperature by use of cold energy of liquefied natural gas; spraying water in a minute-ice generator having been cooled to a given temperature by use of the cold energy of the liquefied natural gas to generate minute ice; and introducing the minute ice and the cooled exhaust gas into a gas hydrate generator so as to cause the minute ice and carbon dioxide in the exhaust gas to react with each other in the gas hydrate generator, thereby generating carbon dioxide hydrate.
摘要翻译：提供了一种方法，包括以下步骤：通过使用液化天然气的冷能将废气冷却至给定温度; 在通过使用液化天然气的冷能被冷却至给定温度的分冰机中喷洒水，以产生微小的冰; 并将微小的冰和冷却的废气引入气体水合物发生器，以使排气中的微小冰和二氧化碳在气体水合物发生器中彼此反应，从而产生二氧化碳水合物。

74. 发明授权

US07046312B2 Active matrix liquid crystal display and method of fabricating same 失效
公开(公告)号：US07046312B2
公开(公告)日：2006-05-16
申请号：US09757778
申请日：2001-01-09
申请人： Jun Koyama , Yoshitaka Yamamoto
发明人： Jun Koyama , Yoshitaka Yamamoto
IPC分类号： G02F1/1368 , G02F1/1339 , G02F1/1345
CPC分类号： G02F1/136204 , G02F1/13454
摘要： There is disclosed a small-sized, active matrix liquid crystal display having high reliability. The liquid crystal display comprises a TFT substrate, a counter substrate, and a layer of a liquid crystal material held between these two substrates. A plurality of pixel TFTs are arranged in rows and columns on the TFT substrate. Driver TFTs forming a driver circuit for driving the pixel TFTs are formed also on the TFT substrate. All of these TFTs are covered by the liquid crystal material directly or via a thin film to protect these TFTs. A short ring is cut after a rubbing operation and before bonding of the substrates. Therefore, during manufacturing, the TFTs are protected from static charges. Also, the cutting operation is facilitated.

75. 发明申请

US20060040436A1 Method and apparatus forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus 审中-公开
标题翻译：形成结晶半导体层的方法和装置以及半导体装置的制造方法
公开(公告)号：US20060040436A1
公开(公告)日：2006-02-23
申请号：US11203962
申请日：2005-08-16
申请人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
发明人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
IPC分类号： H01L21/84
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66772
摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
摘要翻译：一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射，能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

76. 发明申请

US20050014315A1 Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus 失效
标题翻译：用于形成结晶半导体层的方法和装置，以及半导体装置的制造方法
公开(公告)号：US20050014315A1
公开(公告)日：2005-01-20
申请号：US10857941
申请日：2004-06-02
申请人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
发明人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
IPC分类号： G02F1/1345 , B23K26/00 , G02F1/1368 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/335 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66772
摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
摘要翻译：一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射，能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

77. 发明授权

US06828178B2 Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it 失效
标题翻译：具有半导体晶体排列构造的薄膜半导体器件及其制造方法
公开(公告)号：US06828178B2
公开(公告)日：2004-12-07
申请号：US10192850
申请日：2002-07-11
申请人： Masakiyo Matsumura , Yasuhisa Oana , Hiroyuki Abe , Yoshitaka Yamamoto , Hideo Koseki , Mitsunori Warabisako
发明人： Masakiyo Matsumura , Yasuhisa Oana , Hiroyuki Abe , Yoshitaka Yamamoto , Hideo Koseki , Mitsunori Warabisako
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L21/67373 , H01L21/67379 , H01L21/67772 , H01L21/67775 , H01L27/1218 , H01L27/1274 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of semiconductor are formed in a regulated configuration, and each of single crystalline grains is equipped with one unit of electric circuit having a gate electrode, a source electrode and drain electrode. Such regulated arrangement of large size single-crystalline grains in the semiconductor layer is realized by a process including a step of irradiating the layer of amorphous or polycrystalline semiconductor with energy beam such as excimer laser so that maximum irradiation intensity points and minimum irradiation intensity points are arranged regulatedly. The device can have a high mobility such as about 500 cm2/V sec.
摘要翻译：对薄膜半导体器件及其制造方法进行说明。在器件的半导体薄膜层中，以规定的形式形成多个大尺寸的半导体单晶晶粒，并且每个单晶粒都配备有一个单元的电路，该电路具有栅电极，源极电极和漏电极。半导体层中大尺寸单晶晶粒的这种调节布置通过包括以下步骤的方法来实现：使用能量束如准分子激光器照射非晶或多晶半导体层，使得最大照射强度点和最小照射强度点为按规定排列。该装置可以具有高迁移率，例如约500cm 2 / V sec。

78. 发明授权

US06118506A Electro-optical device and method of fabricating same 有权
标题翻译：电光装置及其制造方法
公开(公告)号：US06118506A
公开(公告)日：2000-09-12
申请号：US161161
申请日：1998-09-25
申请人： Shunpei Yamazaki , Jun Koyama , Naoaki Yamaguchi , Katunobu Awane , Funiaki Funada , Yoshitaka Yamamoto
发明人： Shunpei Yamazaki , Jun Koyama , Naoaki Yamaguchi , Katunobu Awane , Funiaki Funada , Yoshitaka Yamamoto
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/136209 , G02F1/136213 , H01L27/1255 , H01L29/66757 , H01L29/78621
摘要： An active matrix liquid crystal display having a high aperture ratio is provided. Retaining capacitors are created between a black matrix and pixel electrodes via a dielectric layer made from an organic resinous material or inorganic material. Those regions of the black matrix which cover TFTs are fully utilized. Therefore, wider area can be used to display an image than heretofore. In the present invention, the difference in relative dielectric constant between different dielectric layers is employed. Therefore, retaining capacitors can be created without the need to take account of parasitic capacitance.
摘要翻译：提供了具有高开口率的有源矩阵液晶显示器。通过由有机树脂材料或无机材料制成的电介质层，在黑矩阵和像素电极之间产生保持电容。覆盖TFT的黑矩阵的那些区域被充分利用。因此，可以使用更宽的面积来显示比迄今为止的图像。在本发明中，采用不同介电层之间的相对介电常数差。因此，可以创建保持电容器，而不需要考虑寄生电容。

79. 发明授权

US5837569A Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5837569A
公开(公告)日：1998-11-17
申请号：US777029
申请日：1996-12-30
申请人： Naoki Makita , Yoshitaka Yamamoto
发明人： Naoki Makita , Yoshitaka Yamamoto
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78654 , H01L21/2022 , H01L27/1277 , G02F1/13454 , H01L29/4908
摘要： According to the present invention, a method for producing a semiconductor device in which an active region made of a crystalline silicon film is formed on an insulating surface of a substrate is provided. The method includes the steps of: forming a first amorphous silicon film on the substrate; selectively introducing at least one kind of catalyst elements for promoting the crystallization of the first amorphous silicon film into a part of the first amorphous silicon film before or after forming the first amorphous silicon film; heating the first amorphous silicon film so as to crystallize the first amorphous silicon film in a direction substantially parallel to a surface of the substrate with respect to a region surrounding a region into which the catalyst elements are selectively introduced; forming an insulating thin film in a region on the crystalline silicon film in which crystals are grown in a direction substantially parallel to the surface of the substrate so as to partially remove the insulating thin film and the crystalline silicon film so that a linear boundary is formed along a crystal-growing direction of the crystalline silicon film; forming a second amorphous silicon film on the crystalline silicon film; and crystallizing the second amorphous silicon film by heating or by irradiating a laser beam or an intense light.
摘要翻译：根据本发明，提供一种半导体器件的制造方法，其中在基板的绝缘表面上形成由结晶硅膜制成的有源区。该方法包括以下步骤：在衬底上形成第一非晶硅膜; 在形成第一非晶硅膜之前或之后，选择性地引入至少一种用于促进第一非晶硅膜在第一非晶硅膜的一部分中的结晶的催化剂元件; 加热所述第一非晶硅膜以使所述第一非晶硅膜相对于选择性地引入所述催化剂元件的区域的区域在基本上平行于所述基板的表面的方向上结晶; 在结晶硅膜上形成绝缘薄膜，其中晶体沿基本上平行于衬底表面的方向生长，从而部分去除绝缘薄膜和晶体硅膜，从而形成线性边界沿着结晶硅膜的晶体生长方向; 在所述晶体硅膜上形成第二非晶硅膜; 并通过加热或照射激光束或强光使第二非晶硅膜结晶。

80. 发明授权

US5764320A Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US5764320A
公开(公告)日：1998-06-09
申请号：US766662
申请日：1996-12-16
申请人： Toshimitsu Konuma , Jun Koyama , Shunpei Yamazaki , Yoshitaka Yamamoto
发明人： Toshimitsu Konuma , Jun Koyama , Shunpei Yamazaki , Yoshitaka Yamamoto
IPC分类号： G02F1/13 , G02F1/1335 , G02F1/1339 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/786 , G02F1/1333
CPC分类号： G02F1/136204
摘要： Within an active matrix liquid crystal display device, short rings, which prevent breakdown of TFTs due to static electricity which may occur in an assembling step, are provided on the TFT substrate covering with the opposed substrate. With this configuration, the same size substrates are able to utilize as the TFT and the opposed substrates. Moreover, even if the short rings are cut in the assembling step, no deterioration occurs in display performance because the short ring cutting portion is protected from the eternal environment by an opposed substrate and a liquid crystal. Thus, the reliability of the device is improved.
摘要翻译：在有源矩阵液晶显示装置中，在与相对基板覆盖的TFT基板上设置有防止由于组装步骤中可能发生的静电导致的TFT的击穿的短环。利用这种配置，相同尺寸的基板能够用作TFT和相对的基板。此外，即使在组装步骤中短切环被切割，由于短环切割部分被相对的基板和液晶保护而不被永久环境保护，所以在显示性能上不会发生劣化。因此，提高了装置的可靠性。

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