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71. 发明授权

US06714401B2 Thin film, method and apparatus for forming the same, and electronic component incorporating the same 失效
标题翻译：薄膜，其形成方法和装置以及包含该薄膜的电子部件
公开(公告)号：US06714401B2
公开(公告)日：2004-03-30
申请号：US10378693
申请日：2003-03-04
申请人： Kazuyoshi Honda , Masaru Odagiri , Kiyoshi Takahashi , Noriyasu Echigo , Nobuki Sunagare
发明人： Kazuyoshi Honda , Masaru Odagiri , Kiyoshi Takahashi , Noriyasu Echigo , Nobuki Sunagare
IPC分类号： H01G406
CPC分类号： B05D1/60 , B05B17/04 , C23C14/246 , C23C14/562 , G11B5/85
摘要： A method for forming a thin film includes the steps of: supplying a deposition material in the form of a liquid onto a heated surface; heating and vaporizing the deposition material on the heated surface while the deposition material is undergoing movement; and depositing the deposition material onto a deposition surface. The deposition material is supplied onto a position of the heated surface where the vaporized deposition material does not reach the deposition surface.
摘要翻译：一种形成薄膜的方法包括以下步骤：将液体形式的沉积材料供应到加热的表面上; 当沉积材料正在运动时，加热和蒸发加热表面上的沉积材料; 以及将沉积材料沉积到沉积表面上。将沉积材料供应到被蒸发的沉积材料未到达沉积表面的被加热表面的位置。

72. 发明授权

US06710997B2 Layered product and capacitor 失效
标题翻译：分层产品和电容器
公开(公告)号：US06710997B2
公开(公告)日：2004-03-23
申请号：US10138227
申请日：2002-05-01
申请人： Kazuyoshi Honda , Noriyasu Echigo , Masaru Odagiri , Nobuki Sunagare , Shinichi Suzawa
发明人： Kazuyoshi Honda , Noriyasu Echigo , Masaru Odagiri , Nobuki Sunagare , Shinichi Suzawa
IPC分类号： H01G406
CPC分类号： H01G4/30
摘要： A layered product including a plurality of deposition units, each having a thin resin layer and a thin metal layer wherein the surface roughness of the thin resin layer is 0.1 &mgr;m or below, a protrusion forming component is not added to the thin resin layer or the surface roughness of the thin metal layer is 0.1 &mgr;m or below. The surface characteristics are improved regardless of the thickness of the layered product and the requirement of high performance thin film can be satisfied because the layered product contains no foreign matter. The layered product is suitably applicable to electronic parts, e.g., a capacitor, especially a chip capacitor.
摘要翻译：包括多个沉积单元的分层产品，每个沉积单元具有薄树脂层和薄金属层，其中薄树脂层的表面粗糙度为0.1μm或更小，突起形成组分不添加到薄树脂层或薄金属层的表面粗糙度为0.1μm以下。无论层叠体的厚度如何，表面特性均有所提高，因层叠体不含异物，能够满足高性能薄膜的要求。层叠体适用于电子部件，例如电容器，特别是片状电容器。

73. 发明授权

US4999220A Method for manufacturing perpendicular magnetic recording medium 失效
标题翻译：制造垂直磁记录介质的方法
公开(公告)号：US4999220A
公开(公告)日：1991-03-12
申请号：US310994
申请日：1989-02-16
申请人： Kazuyoshi Honda , Ryuji Sugita , Kiyokazu Tohma , Yasuihiro Kawawake , Yoshiki Murakami
发明人： Kazuyoshi Honda , Ryuji Sugita , Kiyokazu Tohma , Yasuihiro Kawawake , Yoshiki Murakami
IPC分类号： G11B5/85
CPC分类号： G11B5/85 , Y10S428/90
摘要： In manufacturing perpendicular magnetic recording medium wherein a magnetic layer containing Co and Cr as main contents on a running substrate of polymer film incident angle (.phi..sub.f) of vaporized atom to form said magnetic layer is 30.degree. or larger at the final part of the film formation to improve manufacturing capacity, and magnetic layer (119) is heated after forming the magnetic layer in an oxygen-containing atmosphere.

74. 发明申请

US20130189424A1 HEATING APPARATUS, VACUUM-HEATING METHOD AND METHOD FOR MANUFACTURING THIN FILM 审中-公开
标题翻译：加热装置，真空加热方法和制造薄膜的方法
公开(公告)号：US20130189424A1
公开(公告)日：2013-07-25
申请号：US13820141
申请日：2012-06-28
申请人： Sadayuki Okazaki , Kazuyoshi Honda
发明人： Sadayuki Okazaki , Kazuyoshi Honda
IPC分类号： H01M10/04
CPC分类号： H01M10/04 , C23C14/24 , C23C14/243 , C23C14/562
摘要： Provided is a heating apparatus including: an object to be heated under vacuum; a heating body separable from the object to be heated, the heating body being configured so that a gap is formed between the heating body itself and the object to be heated; and a gas introduction channel for introducing a heat transfer gas into the gap. The object to be heated is heated by the heating body via the heat transfer gas. An example of the heating apparatus is a deposition apparatus 30. An example of the object to be heated is a storage container 9 that holds a deposition material and that has an opening for allowing the deposition material that has been vaporized to pass therethrough. An example of the heating body is a heating container 10 that detachably accommodates the storage container 9 and that has a heater 20 for heating the deposition material in the storage container 9. An example of the gas introduction channel is the gas introduction tube 11.
摘要翻译：本发明提供一种加热装置，包括：真空加热对象物; 加热体，其与被加热物体分离，所述加热体构造成在所述加热体本体与被加热体之间形成间隙，以及用于将传热气体引入到间隙中的气体导入通道。待加热物体由加热体通过传热气体加热。加热装置的一个实例是沉积装置30.被加热物体的一个实例是保持沉积材料的储存容器9，并且具有允许已被蒸发的沉积材料通过的开口。加热体的一个实例是可拆卸地容纳储存容器9的加热容器10，并且具有用于加热储存容器9中的沉积材料的加热器20.气体导入通道的一个例子是气体导入管11。

75. 发明授权

US08241699B2 Deposition apparatus and method for manufacturing film by using deposition apparatus 失效
标题翻译：沉积装置及其制造方法
公开(公告)号：US08241699B2
公开(公告)日：2012-08-14
申请号：US12516328
申请日：2008-03-10
申请人： Sadayuki Okazaki , Kazuyoshi Honda , Tomofumi Yanagi , Shoichi Imashiku
发明人： Sadayuki Okazaki , Kazuyoshi Honda , Tomofumi Yanagi , Shoichi Imashiku
IPC分类号： C23C16/52
CPC分类号： C23C14/562 , C23C14/02 , C23C14/226 , H01M4/0421 , H01M4/1395 , H01M10/052
摘要： A vapor deposition device 100 for moving a sheet-like substrate 4 in a roll-to-roll system in a chamber 2 to continuously form a vapor deposition film on the substrate 4. The vapor deposition device 100 comprises an evaporation source 9 for evaporating a vapor-depositing material; a transportation section including first and second rolls 3 and 8 for holding the substrate 4 in the state of being wound therearound and a guide section for guiding the substrate 4; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source 9. Vapor deposition zones 60a through 60d include a planar transportation zone for transporting the substrate 4 such that the surface of the substrate 4 to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source 9 such that the vapor-depositing material is not incident on the substrate 4 in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone.
摘要翻译：一种气相沉积装置100，用于在室2中的辊对辊系统中移动片状基底4，以在基底4上连续地形成气相沉积膜。气相沉积装置100包括蒸发源9 气相沉积材料; 一个传送部分，包括用于将基片4保持在其周围的状态的第一和第二辊子3和8;以及用于引导衬底4的引导部分; 以及位于气相沉积可能区域中的屏蔽部分，用于形成从蒸发源9不能通过气相沉积材料到达的屏蔽区域。蒸镀区域60a至60d包括用于输送基板4的平面输送区域使得要经历气相沉积材料的基板4的表面是平面的; 并且运送部分相对于蒸发源9定位，使得气相沉积材料在除了屏蔽区域之外的气相沉积可能区域中不与基板的法线方向入射到基板4上。

76. 发明申请

US20120100306A1 THIN FILM MANUFACTURING METHOD AND SILICON MATERIAL WHICH CAN BE USED IN THE METHOD 审中-公开
标题翻译：薄膜制造方法和可用于该方法的硅材料
公开(公告)号：US20120100306A1
公开(公告)日：2012-04-26
申请号：US13379282
申请日：2010-07-01
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
IPC分类号： B05D3/06 , C01B33/02 , B05D3/02
CPC分类号： C23C14/246 , C01B33/02 , C23C14/14
摘要： Particles coming from an evaporation source 9 are deposited on a substrate 21 at a specified film forming position 33 in a vacuum so as to form a thin film on the substrate 21. A rod-shaped material 32 containing a source material of the thin film is melted above the evaporation source 9 and the melted material is supplied to the evaporation source 9 in the form of droplets 14. As the rod-shaped material 32, a rod-shaped silicon material in which a plurality of first regions each surrounded by a grain boundary are present at positions of 90% length from a center toward an outer peripheral part on a cross section perpendicular to a longitudinal direction of the material, and an area-weighted average value of major diameters of the first regions is 200 μm or less, and a plurality of second regions each surrounded by a grain boundary are present at positions of 50% length from the center toward the outer peripheral part, and an area-weighted average value of major diameters of the second regions is 1000 μm or more is used.
摘要翻译：来自蒸发源9的颗粒在真空中在指定的膜形成位置33处沉积在基板21上，以在基板21上形成薄膜。包含薄膜源材料的棒状材料32是熔化在蒸发源9上方，并且熔融的材料以液滴14的形式供应到蒸发源9.作为棒状材料32，其中多个第一区域被颗粒包围的棒状材料边界存在于与材料的纵向方向垂直的截面上从中心朝向外周部的长度为90％的位置，第一区域的长径的面积加权平均值为200μm以下，并且由晶界包围的多个第二区域存在于从中心向外周部分的长度为50％的位置处，并且第二区域的主要直径的面积加权平均值区域为1000μm以上。

77. 发明申请

US20110281029A1 METHOD FOR FORMING THIN FILM 有权
标题翻译：形成薄膜的方法
公开(公告)号：US20110281029A1
公开(公告)日：2011-11-17
申请号：US13132023
申请日：2009-12-10
申请人： Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Satoshi Shibutani , Sadayuki Okazaki , Yuko Ogawa , Daisuke Suetsugu
发明人： Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Satoshi Shibutani , Sadayuki Okazaki , Yuko Ogawa , Daisuke Suetsugu
IPC分类号： C23C16/44 , C23C16/04
CPC分类号： C23C14/042 , C23C14/14 , C23C14/24 , C23C14/243 , C23C14/541 , C23C14/562
摘要： Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.
摘要翻译：在通过气体冷却确保足够的冷却性能的同时防止真空室中的真空度恶化。在真空中设置基板21，将冷却体1设置在基板21的膜非形成面附近。通过在基板21的成膜面上沉积成膜材料而形成薄膜，同时将冷却气体引入到基板21和冷却体1之间。此时，引入与成膜材料反应的气体作为冷却气体。

78. 发明申请

US20110111135A1 THIN FILM MANUFACTURING METHOD AND SILICON MATERIAL THAT CAN BE USED WITH SAID METHOD 审中-公开
标题翻译：薄膜制造方法和可以使用方法的硅材料
公开(公告)号：US20110111135A1
公开(公告)日：2011-05-12
申请号：US13002876
申请日：2009-07-07
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
IPC分类号： B05D5/12 , C01B33/02 , B05D3/06 , B05D3/00 , C23C16/00
CPC分类号： C23C14/246 , C23C14/20 , C23C14/562 , H01M4/0421 , H01M4/1395 , H01M6/40 , H01M10/052
摘要： Particles coming from an evaporation source 9 are deposited on a substrate 21 at a predetermined film forming position 33 in a vacuum so as to form a thin film on the substrate 21. A bulk material 32 containing a source material of the thin film is melted above the evaporation source 9, and the melted material is supplied to the evaporation source 9 in the form of droplets 14. A silicon material 32 including a plurality of pores therein is used as the bulk material 32. Preferably, the pores have a lower average internal pressure than an atmospheric pressure. More preferably, the average internal pressure is 0.1 atm or less.
摘要翻译：来自蒸发源9的颗粒在真空中在预定的膜形成位置33处沉积在基板21上，以在基板21上形成薄膜。将含有薄膜源材料的散装材料32熔化在蒸发源9和熔化的材料以液滴14的形式供应到蒸发源9.将包括多个孔的硅材料32用作主体材料32.优选地，孔具有较低的平均内部压力大于大气压。更优选地，平均内压为0.1atm以下。

79. 发明授权

US07781101B2 Electrode for nonaqueous electrolyte secondary battery, method for producing same, and nonaqueous electrolyte secondary battery comprising such electrode for nonaqueous electrolyte secondary battery 有权
标题翻译：非水电解质二次电池用电极及其制造方法以及非水电解质二次电池用电极的非水电解质二次电池
公开(公告)号：US07781101B2
公开(公告)日：2010-08-24
申请号：US11994562
申请日：2007-02-13
申请人： Sadayuki Okazaki , Kazuyoshi Honda , Masaya Ugaji
发明人： Sadayuki Okazaki , Kazuyoshi Honda , Masaya Ugaji
IPC分类号： H01M4/58
CPC分类号： H01M4/134 , H01M4/04 , H01M4/366 , H01M4/485 , H01M10/058
摘要： An electrode for a non-aqueous electrolyte secondary battery 6 according to the present invention includes: a current collector 3; a first active material layer 2 formed on the current collector 3; and a second active material layer 5 provided on the first active material layer 2, the second active material layer 5 including a plurality of active material particles 4. The plurality of active material particles 4 is mainly of a chemical composition represented as SiOx (0≦x x). The area in which the first active material layer 2 is in contact with the plurality of active material particles 4 is smaller than the area in which the current collector 3 is in contact with the first active material layer 2.
摘要翻译：本发明的非水电解质二次电池用电极6具备：集电体3，形成在集电体3上的第一活性物质层2; 以及设置在第一活性物质层2上的第二活性物质层5，具有多个活性物质粒子4的第二活性物质层5.多个活性物质粒子4主要以SiO x（0＆amp; x <1.2）。第一活性物质层2主要由以SiO y表示的化学组成（1.0＆amp; nl; y <2.0，y> x）。第一活性物质层2与多个活性物质粒子4接触的区域比集电体3与第一活性物质层2接触的面积小。

80. 发明申请

US20100089544A1 MOLD FOR FORMING CAST RODS, CASTING APPARATUS, AND PRODUCTION METHOD OF CAST RODS 有权
标题翻译：模具铸造模具，铸造装置和铸件生产方法
公开(公告)号：US20100089544A1
公开(公告)日：2010-04-15
申请号：US12576486
申请日：2009-10-09
申请人： Kazuyoshi Honda , Yuma Kamiyama , Yasuharu Shinokawa
发明人： Kazuyoshi Honda , Yuma Kamiyama , Yasuharu Shinokawa
IPC分类号： B22D23/00 , B29C39/26 , B22C9/22 , B22D45/00 , B22C9/00
CPC分类号： C01B33/02 , B22C9/061 , B22C9/22
摘要： Disclosed is a mold 10 for forming cast rods including: a segment assembly 12 including a plurality of segments 14 being placed side by side, and a plurality of cavities 26 extending along a longitudinal direction 16; and clamping means (18 to 21) for clamping the segment assembly 12 in directions orthogonal to the longitudinal direction 16. The mold 10 has one or more cavity-forming portions 28 each forming a part of one of the peripheral surfaces of the cavities 26. Each cavity 26 is formed by a combination of two or more segments 14, and at least one of the plurality of segments 14 has two or more cavity-forming portions 28.
摘要翻译：公开了一种用于形成铸棒的模具10，其包括：分段组件12，其包括并排放置的多个段14和沿着纵向方向16延伸的多个空腔26; 以及用于沿垂直于纵向方向16的方向夹紧段组件12的夹紧装置（18至21）。模具10具有一个或多个空腔形成部分28，每个腔形成部分形成空腔26的一个周边表面的一部分。每个空腔26由两个或多个段14的组合形成，并且多个段14中的至少一个具有两个或更多个空腔形成部分28。

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