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71. 发明授权

US06875627B2 Structure and method for index-guided buried heterostructure AlGaInN laser diodes 有权
标题翻译：折射率引导掩埋异质结AlGaInN激光二极管的结构与方法
公开(公告)号：US06875627B2
公开(公告)日：2005-04-05
申请号：US10025462
申请日：2001-12-26
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S5/227 , H01S5/20 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
摘要翻译：与传统的脊波导结构相比，索引引导掩埋异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

72. 发明授权

US06574256B1 Distributed feedback laser fabricated by lateral overgrowth of an active region 有权
标题翻译：通过有源区域的横向过度生长制造的分布式反馈激光器
公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译：分布式反馈结构包括基板材料。有源层具有包括铝，镓，铟和氮中的至少一种的合金。具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

73. 发明授权

US06389051B1 Structure and method for asymmetric waveguide nitride laser diode 有权
公开(公告)号：US06389051B1
公开(公告)日：2002-05-14
申请号：US09343939
申请日：1999-06-30
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

74. 发明授权

US06365429B1 Method for nitride based laser diode with growth substrate removed using an intermediate substrate 有权
标题翻译：使用中间基板去除生长衬底的基于氮化物的激光二极管的方法
公开(公告)号：US06365429B1
公开(公告)日：2002-04-02
申请号：US09276856
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热衬底上的方法。该方法使用准分子激光器在将中间衬底附着到与蓝宝石衬底相对的一侧附近后从蓝宝石生长衬底分离氮化物激光二极管。导热衬底随后与去除蓝宝石衬底的一侧接合。

75. 发明授权

US06285698B1 MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer 有权
标题翻译： InGaN量子阱激光器结构在沟槽下波导层上的MOCVD生长
公开(公告)号：US06285698B1
公开(公告)日：2001-09-04
申请号：US09160324
申请日：1998-09-25
申请人： Linda T. Romano , Daniel Hofstetter , Thomas L. Paoli
发明人： Linda T. Romano , Daniel Hofstetter , Thomas L. Paoli
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/34333 , H01S2304/04
摘要： Group III-V nitride semiconductors are used as light emitters for optoelectronic devices. To provide the desired range of bandgaps and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because poor lattice mismatch between group III-V nitride alloys. Thus, a plurality of gratings or grooves are formed in the group III-V nitride layer in order to relieve strain between the group III-V nitride layer and the active region. The plurality of gratings allows segregation of In in a manner that optimizes the wavelength of light produced.
摘要翻译： III-V族氮化物半导体用作光电器件的发光体。为了在异质结构器件中提供期望的带隙和带偏移范围，必须生长InGaN层。 InGaN层难以生长，因为III-V族氮化物合金之间的晶格失配不良。因此，为了减轻III-V族氮化物层和活性区域之间的应变，在III-V族氮化物层中形成多个光栅或沟槽。多个光栅允许以优化产生的光的波长的方式分离In。

76. 发明授权

US5977612A Semiconductor devices constructed from crystallites 失效
标题翻译：由微晶构成的半导体器件
公开(公告)号：US5977612A
公开(公告)日：1999-11-02
申请号：US770403
申请日：1996-12-20
申请人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
发明人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
IPC分类号： H01S5/00 , H01L29/201 , H01L33/16 , H01L33/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/201 , H01L33/16 , H01S5/34333
摘要： The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
摘要翻译：本发明涉及以III-V族氮化物材料微晶形成的电子器件。具体地说，本发明简化了在III-V族氮化物材料中制造高性能电子器件所需的加工技术。

77. 发明授权

US07534638B2 III-nitride light emitting devices grown on templates to reduce strain 有权
公开(公告)号：US07534638B2
公开(公告)日：2009-05-19
申请号：US11615826
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L21/205
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/32
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

78. 发明申请

US20090032828A1 III-Nitride Device Grown on Edge-Dislocation Template 审中-公开
标题翻译：边缘位错模板上生长的III型氮化物器件
公开(公告)号：US20090032828A1
公开(公告)日：2009-02-05
申请号：US11833921
申请日：2007-08-03
申请人： Linda T. Romano , Patrick N. Grillot
发明人： Linda T. Romano , Patrick N. Grillot
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/32 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L33/12
摘要： A semiconductor light emitting device includes a wurtzite III-nitride semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A template layer and a dislocation bending layer are grown before the light emitting layer. The template layer is grown such that at least 70% of the dislocations in the template layer are edge dislocations. At least some of the edge dislocations in the template layer continue into the dislocation bending layer. The dislocation bending layer is grown to have a different magnitude of strain than the template layer. The change in strain at the interface between the template layer and the dislocation bending layer causes at least some of the edge dislocations in the template layer to bend to a different orientation in the dislocation bending layer. Semiconductor material grown above the bent edge dislocations may exhibit reduced strain.
摘要翻译：半导体发光器件包括含有设置在n型区域和p型区域之间的发光层的纤锌矿III族氮化物半导体结构。模板层和位错弯曲层在发光层之前生长。生长模板层使得模板层中至少70％的位错是边缘位错。模板层中的至少一些边缘位错继续进入位错弯曲层。使位错弯曲层生长成具有与模板层不同的应变大小。在模板层和位错弯曲层之间的界面处的应变变化导致模板层中的至少一些边缘位错在位错弯曲层中弯曲成不同的取向。在弯曲边缘位错以上生长的半导体材料可能表现出减小的应变。

79. 发明授权

US07123637B2 Nitride-based laser diode with GaN waveguide/cladding layer 有权
标题翻译：氮化镓基激光二极管与GaN波导/包层
公开(公告)号：US07123637B2
公开(公告)日：2006-10-17
申请号：US10394559
申请日：2003-03-20
申请人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
发明人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2009 , H01S5/2205 , H01S5/2231 , H01S5/3213 , H01S5/34333
摘要： A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.
摘要翻译：使用单个GaN：Mg波导/包覆层的氮化物基激光二极管结构代替用于常规氮化物基激光二极管结构中的单独的GaN：Mg波导和AlGaN：Mg包覆层。当使用最佳厚度形成时，GaN：Mg层产生与传统结构相当或更好的光学约束。在多量子阱和GaN：Mg波导层的下部之间提供薄的AlGaN隧道势垒层，其抑制电子泄漏，而不会明显减少光学限制。在GaN：Mg上部波导结构上形成裂缝金属电极，以避免上部电极金属中的吸收损失。一对AlGaN：Si电流阻挡层部分位于裂缝金属电极部分下方，并被位于多量子阱的有源区上方的间隙分开。

80. 发明授权

US07000315B2 Method of making photolithographically-patterned out-of-plane coil structures 有权
公开(公告)号：US07000315B2
公开(公告)日：2006-02-21
申请号：US10387203
申请日：2003-03-11
申请人： Christopher L. Chua , Francesco Lemmi , Koenraad F. Van Schuylenbergh , Jeng Ping Lu , David K. Fork , Eric Peeters , Decai Sun , Donald L. Smith , Linda T. Romano
发明人： Christopher L. Chua , Francesco Lemmi , Koenraad F. Van Schuylenbergh , Jeng Ping Lu , David K. Fork , Eric Peeters , Decai Sun , Donald L. Smith , Linda T. Romano
IPC分类号： H01R43/16
CPC分类号： H01L24/13 , G01R1/06727 , G01R3/00 , H01F17/0033 , H01F17/02 , H01F41/041 , H01L21/76838 , H01L21/7688 , H01L23/498 , H01L23/49811 , H01L23/5227 , H01L24/11 , H01L24/16 , H01L24/48 , H01L28/10 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/13099 , H01L2224/4847 , H01L2224/8592 , H01L2924/0001 , H01L2924/00014 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01058 , H01L2924/01061 , H01L2924/01068 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12034 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/4902 , Y10T29/49071 , Y10T29/49147 , Y10T29/49204 , Y10T29/49208 , Y10T29/4921 , Y10T29/49218 , H01L2924/00 , H01L2224/05599 , H01L2224/85399 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

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