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71. 发明授权

US07592407B2 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process 有权
标题翻译：可聚合氟化合物，制备方法，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07592407B2
公开(公告)日：2009-09-22
申请号：US11259179
申请日：2005-10-27
申请人： Yuji Harada , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
发明人： Yuji Harada , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
IPC分类号： C07C69/52
CPC分类号： G03F7/0397 , C07D309/10 , C08F220/24 , G03F7/0046 , G03F7/0392 , Y02P20/55
摘要： A polymerizable fluorinated compound having formula (2a) or (2b) wherein R1 and R2 are H or C1-C20 alkyl or fluoroalkyl, R3 is H, F or C1-C4 alkyl or fluoroalkyl, and R is H or a protective group is polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light of wavelength≦300 nm, alkali development amenability, and dry etch resistance.
摘要翻译：具有式（2a）或（2b）的可聚合氟化化合物，其中R 1和R 2是H或C 1 -C 20烷基或氟代烷基，R 3是H，F或C 1 -C 4烷基或氟代烷基，R是H或保护基团是聚合的转化成氟化聚合物，其用作基础聚合物以配制对波长<= 300nm的激光具有透明度的抗蚀剂组合物，碱显影易化性和耐干蚀刻性。

72. 发明申请

US20060094817A1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process 有权
标题翻译：可聚合氟化合物，制备方法，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20060094817A1
公开(公告)日：2006-05-04
申请号：US11259179
申请日：2005-10-27
申请人： Yuji Harada , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
发明人： Yuji Harada , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
IPC分类号： C08L27/12
CPC分类号： G03F7/0397 , C07D309/10 , C08F220/24 , G03F7/0046 , G03F7/0392 , Y02P20/55
摘要： A polymerizable fluorinated compound having formula (2a) or (2b) wherein R1 and R2 are H or C1-C20 alkyl or fluoroalkyl, R3 is H, F or C1-C4 alkyl or fluoroalkyl, and R is H or a protective group is polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light of wavelength≦300 nm, alkali development amenability, and dry etch resistance.
摘要翻译：具有式（2a）或（2b）的可聚合氟化化合物，其中R 1和R 2是H或C 1 -C 3 - 20个或多个烷基或氟烷基，R 3是H，F或C 1 -C 4烷基或氟代烷基，R是H 或保护基团聚合成氟化聚合物，其用作基础聚合物以配制对波长<= 300nm的激光具有透明度的抗蚀剂组合物，碱显影性能和耐干蚀刻性。

73. 发明申请

US20100119970A1 Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process 有权
标题翻译：阻止含有热酸发生剂的下层组合物，抗下层薄膜形成基材和图案化工艺
公开(公告)号：US20100119970A1
公开(公告)日：2010-05-13
申请号：US12588590
申请日：2009-10-20
申请人： Youichi Ohsawa , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
发明人： Youichi Ohsawa , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/20 , C07C309/19 , C07C309/04 , G03F7/004
CPC分类号： C07C381/12 , C07C309/12 , C07C2603/74 , C07D307/93 , G03F7/0045 , G03F7/091
摘要： There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH2CF2SO3−H+ (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.
摘要翻译：公开了一种抗蚀剂下层组合物，其被配置为通过在光刻中使用的多层抗蚀剂方法使用以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层，其中抗蚀剂下层组合物变得不溶或形成下层后在碱性显影剂中难以溶解，并且其中抗蚀剂下层组合物至少包含通过在100℃的温度下加热产生由通式（1）表示的酸的热酸发生剂 ℃以上。 RCOO-CH 2 CF 2 SO 3 -H +（1）可以提供多层抗蚀剂法（特别是双层抗蚀剂法和三层抗蚀剂法）中的抗蚀剂下层组合物，该组合物用于形成层低于作为抗蚀剂上层膜的光致抗蚀剂层，该组合物在形成下层之后在碱性显影剂中变得不溶或难溶，并且该组合物能够形成抗蚀剂下层膜，中间层膜等具有较高的抗中毒作用并且对环境具有较低的负荷。

74. 发明授权

US09017918B2 Monomer, polymer, chemically amplified positive resist composition, and patterning process 有权
标题翻译：单体，聚合物，化学放大阳性抗蚀剂组合物和图案化工艺
公开(公告)号：US09017918B2
公开(公告)日：2015-04-28
申请号：US13150698
申请日：2011-06-01
申请人： Jun Hatakeyama , Seiichiro Tachibana , Koji Hasegawa
发明人： Jun Hatakeyama , Seiichiro Tachibana , Koji Hasegawa
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F218/10 , C07C69/54 , C07C69/96 , C08F20/26 , C08F214/18 , G03F7/004
CPC分类号： C08F214/18 , C07C69/54 , C07C69/96 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C08F20/26 , G03F7/0045 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/111
摘要： A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance.
摘要翻译：从其上取代酸不稳定基团的羟基苯基甲基丙烯酸酯单体获得聚合物。包含聚合物作为基础树脂的正型抗蚀剂组合物在曝光前后具有非常高的对比度的碱溶解速率，高分辨率，良好的轮廓和曝光后图案的最小线边缘粗糙度，延迟的酸扩散速率和耐腐蚀性好。

75. 发明申请

US20070111140A1 Resist composition and patterning process using the same 有权
标题翻译：抗蚀剂组成和图案化工艺使用相同
公开(公告)号：US20070111140A1
公开(公告)日：2007-05-17
申请号：US11580962
申请日：2006-10-16
申请人： Jun Hatakeyama , Koji Hasegawa , Youichi Ohsawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Youichi Ohsawa , Seiichiro Tachibana
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/114 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).
摘要翻译：公开了一种抗蚀剂组合物，其在高能量束暴露时显示出高灵敏度和高分辨率，由于在显影时的膨胀减小，提供降低的线边缘粗糙度，在显影后提供少量残留物，具有优异的耐干蚀刻性，以及也可以适用于液浸光刻; 以及使用抗蚀剂组合物的图案化工艺。可以提供一种抗蚀剂组合物，其至少包含由以下通式（a）和（b）表示的重复单元的聚合物。

76. 发明授权

US08450042B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08450042B2
公开(公告)日：2013-05-28
申请号：US12720098
申请日：2010-03-09
申请人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
IPC分类号： G03F7/004 , G03F7/039 , G03F7/26
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/30 , C08F220/38 , C08F234/02 , C08F244/00 , G03F7/0045 , G03F7/0046 , C08F232/08
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：包含作为基础树脂的具有羧基的聚合物的正性抗蚀剂组合物，其氢被酸不稳定的芴结构基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。

77. 发明授权

US08211618B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08211618B2
公开(公告)日：2012-07-03
申请号：US12719229
申请日：2010-03-08
申请人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/28 , C08F220/30 , C08F220/38 , C08F244/00 , C08F2220/301 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111 , C08F234/02
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：一种正性抗蚀剂组合物，其包含作为基础树脂的具有羧基的聚合物，其氢被酸不稳定的苊基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。

78. 发明申请

US20100227274A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20100227274A1
公开(公告)日：2010-09-09
申请号：US12720098
申请日：2010-03-09
申请人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/30 , C08F220/38 , C08F234/02 , C08F244/00 , G03F7/0045 , G03F7/0046 , C08F232/08
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：包含作为基础树脂的具有羧基的聚合物的正性抗蚀剂组合物，其氢被酸不稳定的芴结构基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。

79. 发明申请

US20100227273A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20100227273A1
公开(公告)日：2010-09-09
申请号：US12719229
申请日：2010-03-08
申请人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
IPC分类号： G03F7/004 , G03F7/027 , G03F7/20 , C08F32/08 , C08F224/00
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/28 , C08F220/30 , C08F220/38 , C08F244/00 , C08F2220/301 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111 , C08F234/02
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：一种正性抗蚀剂组合物，其包含作为基础树脂的具有羧基的聚合物，其氢被酸不稳定的苊基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。

80. 发明申请

US20110294070A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：单体，聚合物，化学反应活性组分和方法
公开(公告)号：US20110294070A1
公开(公告)日：2011-12-01
申请号：US13150698
申请日：2011-06-01
申请人： Jun Hatakeyama , Seiichiro Tachibana , Koji Hasegawa
发明人： Jun Hatakeyama , Seiichiro Tachibana , Koji Hasegawa
IPC分类号： G03F7/004 , C08F214/18 , C07C69/54 , C08F220/68 , C08F224/00 , G03F7/20
CPC分类号： C08F214/18 , C07C69/54 , C07C69/96 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C08F20/26 , G03F7/0045 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/111
摘要： A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance.
摘要翻译：从其上取代酸不稳定基团的羟基苯基甲基丙烯酸酯单体获得聚合物。包含聚合物作为基础树脂的正型抗蚀剂组合物在曝光前后具有非常高的对比度的碱溶解速率，高分辨率，良好的轮廓和曝光后图案的最小线边缘粗糙度，延迟的酸扩散速率和耐腐蚀性好。

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