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71. 发明授权

US06829279B1 Laser oscillating apparatus, exposure apparatus using the same and device fabrication method 有权
标题翻译：激光振荡装置，使用其的曝光装置和装置制造方法
公开(公告)号：US06829279B1
公开(公告)日：2004-12-07
申请号：US09494945
申请日：2000-02-01
申请人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
IPC分类号： H01S500
CPC分类号： G03F7/70025 , H01S3/0315 , H01S3/0385 , H01S3/225
摘要： In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.
摘要翻译：在激光振荡装置中，通过将形成在波导壁上的多个槽引入来自波导的电磁波向激光管激励激光器中的激光气体，通过使从激光气体发出的光共振而产生激光束槽形成为一条直线，使得它们的纵向与波导的纵向方向一致，并且金属壁形成为围绕这些槽。该金属壁形成从激光管壁中的狭缝到窗口的微波通道的间隙，从而将激光管壁与狭缝分开预定距离。

72. 发明授权

US06818852B2 Microwave plasma processing device, plasma processing method, and microwave radiating member 失效
标题翻译：微波等离子体处理装置，等离子体处理方法和微波辐射构件
公开(公告)号：US06818852B2
公开(公告)日：2004-11-16
申请号：US10344761
申请日：2003-02-14
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： B23K900
CPC分类号： H01J37/3222 , H01J37/32192
摘要： A placement stage (24) on which a semiconductor wafer (W) is place is provided within a processing container (22). A microwave is generated by a microwave generator (76), and the microwave is introduced into a process container (22) through a flat antenna member (66). The flat antenna member (66) has a plurality of slots (84) arranged along a plurality of circumferences, and the plurality of circumferences are non-concentric to each other. A distribution of plasma density in the flat antenna member (66) in a radial direction is uniform.
摘要翻译：在处理容器（22）内设置放置有半导体晶片（W）的放置台（24）。由微波发生器（76）产生微波，微波通过平板天线构件（66）引入处理容器（22）。扁平天线构件（66）具有沿着多个圆周布置的多个狭槽（84），并且多个周边彼此不同心。扁平天线构件（66）中的等离子体密度在径向上的分布是均匀的。

73. 发明授权

US06804285B2 Gas supply path structure for a gas laser 有权
标题翻译：气体激光器的供气路径结构
公开(公告)号：US06804285B2
公开(公告)日：2004-10-12
申请号：US09425015
申请日：1999-10-25
申请人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
发明人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
IPC分类号： H01S322
CPC分类号： H01S3/036
摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.
摘要翻译：气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统流体入口和/或在流体出口处。

74. 发明授权

US06801554B1 Laser oscillating apparatus, exposure apparatus, and device fabrication method 有权
标题翻译：激光振荡装置，曝光装置和装置制造方法
公开(公告)号：US06801554B1
公开(公告)日：2004-10-05
申请号：US09531958
申请日：2000-03-21
申请人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
IPC分类号： H01S300
CPC分类号： H01S3/225 , H01S3/0975
摘要： An excimer laser gas in a laser tube 2 is excited by a microwave introduced from awaveguide 1, and electric field concentration occurs in a slit-shaped gap 3 provided in a plate member 11c, causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.
摘要翻译：激光管2中的准分子激光气体被从波导管1引入的微波激发，并且在设置在板构件11c中的狭缝状间隙3中发生电场浓度，引起等离子体放电。然后等离子体光的相位被调节并且光被共振，以引起准分子激光。这种结构实现了沿着激光发射的长度方向的等离子体激发完全均匀，并且以最小的能量损失实现均匀的激光发射。

75. 发明授权

US06753496B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06753496B2
公开(公告)日：2004-06-22
申请号：US10010383
申请日：2001-12-07
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B23K1000
CPC分类号： B23K10/003 , B23K2101/40
摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
摘要翻译：在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

76. 发明授权

US06744802B1 Laser oscillating apparatus with slotted waveguide 有权
标题翻译：具有开槽波导的激光振荡装置
公开(公告)号：US06744802B1
公开(公告)日：2004-06-01
申请号：US09512074
申请日：2000-02-24
申请人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
IPC分类号： H01S3097
CPC分类号： G03F7/70025 , H01S3/0315 , H01S3/0975 , H01S3/225
摘要： In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots (10) are formed at a predetermined pitch in a long end face (H plane) of each waveguide (1) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).
摘要翻译：在时隙阵列结构中，实现了在激光管的长度上整体上均匀的电磁波发射，以允许具有最小能量损失的均匀的激光发射。在每个波导（1）的长边（H平面）上沿着H平面的纵向方向上的中心线（m）以预定间距形成狭槽（10），以交替地位于左侧和右侧的中心线（m）并与中心线（m）间隔开距离（d）。

77. 发明授权

US06726802B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06726802B2
公开(公告)日：2004-04-27
申请号：US10211498
申请日：2002-08-02
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32266
摘要： A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.
摘要翻译：等离子体处理装置包括：槽板，其具有用于将微波从波导传递到微波入口窗口的槽形区域;以及槽板驱动单元，其驱动槽板以改变槽板相对于微波入口的位置窗口。狭缝板因此相对于微波入口窗移动，以改变微波通过的槽口的位置，数量和面积中的至少一个。因此，等离子体处理装置即使在待处理的大面积基板或晶片上的膜由不同的材料制成或由不同材料的层构成的叠层膜将被处理时，即使处理条件显着变化，也能确保均匀的等离子体处理。

78. 发明授权

US06638392B2 Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06638392B2
公开(公告)日：2003-10-28
申请号：US09730739
申请日：2000-12-07
申请人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H01J37/3244
摘要： A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.
摘要翻译：等离子体处理装置包括在室内发射等离子体的电介质板和用于支撑电介质板的电介质板支撑构件。在电介质板支撑构件上设置有用于向反应室内部供应反应气体的多个气体导入孔。气体导入孔的出口在与基板8的表面相对的一侧开口，并布置在电介质板5外侧的周边区域。接地电位施加到室盖和电介质板支撑构件，偏压为施加到基底。因此，可以获得能够使用均匀等离子体均匀地处理大面积的基板的低成本等离子体处理装置。

79. 发明授权

US06585851B1 Plasma etching device 失效
公开(公告)号：US06585851B1
公开(公告)日：2003-07-01
申请号：US09380520
申请日：1999-11-26
申请人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
IPC分类号： C23F108
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/3266
摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

80. 发明授权

US06357385B1 Plasma device 有权
标题翻译：等离子体装置
公开(公告)号：US06357385B1
公开(公告)日：2002-03-19
申请号：US09355229
申请日：1999-10-05
申请人： Tadahiro Ohmi , Takahisa Nitta , Masaki Hirayama , Haruyuki Takano , Ryu Kaiwara
发明人： Tadahiro Ohmi , Takahisa Nitta , Masaki Hirayama , Haruyuki Takano , Ryu Kaiwara
IPC分类号： C23C1600
CPC分类号： H01J37/32238 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/02115 , H01L21/0212 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02197 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31675 , H01L21/31691
摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/&mgr;0&sgr;)½, where &sgr;, &mgr;0 and &ohgr; respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.
摘要翻译：设置有容器，气体供给系统和排气系统的等离子体装置。容器由能够传输微波的材料制成的第一电介质板组成。用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。构件的厚度（d）大于（2 / mu0sigma）1/2，其中σ，μ0和ω分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

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