专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06586344B2 Precursors for zirconium and hafnium oxide thin film deposition 失效
公开(公告)号：US06586344B2
公开(公告)日：2003-07-01
申请号：US10261448
申请日：2002-09-30
申请人： Wei-Wei Zhuang , David R. Evans
发明人： Wei-Wei Zhuang , David R. Evans
IPC分类号： G01B533
CPC分类号： H01L21/31625 , C01G25/02 , C01G27/02 , C07F7/003 , C23C16/405 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/0228 , H01L21/3141
摘要： A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.

72. 发明授权

US06200866B1 Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET 有权
标题翻译：使用硅锗等合金作为制造MOSFET的替代栅极
公开(公告)号：US06200866B1
公开(公告)日：2001-03-13
申请号：US09410346
申请日：1999-09-30
申请人： Yanjun Ma , Douglas J. Tweet , David R. Evans , Yoshi Ono
发明人： Yanjun Ma , Douglas J. Tweet , David R. Evans , Yoshi Ono
IPC分类号： H01L21338
CPC分类号： H01L21/31053 , H01L21/2807 , H01L21/28194 , H01L21/28202 , H01L21/76801 , H01L21/76804 , H01L21/76834 , H01L29/41733 , H01L29/41775 , H01L29/41783 , H01L29/4908 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/66545 , H01L29/66575 , H01L29/66772 , H01L29/78684
摘要： A method of fabricating a MOSFET is provided, including: depositing an oxide layer on a silicon substrate for device isolation; forming a silicon based alloy island above a gate region in the substrate, wherein the silicon based alloy comprises a silicon germanium alloy or a silicon tin alloy or another alloy of Group IV-B elements; building a sidewall about the silicon based alloy island; forming a source region and a drain region in the substrate; removing the silicon based alloy island, thereby leaving a void over the gate region; filing the void and the areas over the source region and the drain region; and planarizing the upper surface of the structure by chemical mechanical polishing. Alternative embodiments providing conventional and raised source/drain structures are disclosed.
摘要翻译：提供一种制造MOSFET的方法，包括：在硅衬底上沉积氧化层用于器件隔离; 在所述基板的栅极区域的上方形成硅基合金岛，其中所述硅基合金包含硅锗合金或硅锡合金或第IV-B族元素的另一种合金; 围绕硅基合金岛构建侧壁; 在衬底中形成源区和漏区; 去除硅基合金岛，从而在栅极区域上留下空隙; 填充空隙和源区域和漏区域上的区域; 并通过化学机械抛光对结构的上表面进行平面化。公开了提供常规和凸起的源极/漏极结构的替代实施例。

73. 发明授权

US4866728A Electric discharge apparatus 失效
标题翻译：放电装置
公开(公告)号：US4866728A
公开(公告)日：1989-09-12
申请号：US166381
申请日：1988-02-04
申请人： David R. Evans , John E. Harry
发明人： David R. Evans , John E. Harry
IPC分类号： H01S3/038
CPC分类号： H01S3/038 , H01S3/0381
摘要： A gas laser includes a laser cavity, mirror means defining an optical path in the cavity, electrodes defining an electric discharge path in the cavity, the electrodes including at least one anode member having a passage therethrough which at one end opens into the cavity, and gas supply means for injecting gas into the cavity through the passage, wherein the wall of the passage at said one end and the exterior of the anode member around the end of said passage is electrically insulated and an electrically conducting anode surface defining the root of the discharge is provided inwardly of the perimeter of the open end of the passage.
摘要翻译：气体激光器包括激光腔，在空腔中限定光路的反射镜装置，限定空腔中的放电路径的电极，所述电极包括至少一个具有穿过其中的通道的阳极部件，其一端通向腔体，以及用于通过通道将气体注入空腔的气体供应装置，其中围绕所述通道端部的所述一端的所述通道的壁和所述阳极构件的外部是电绝缘的，并且限定所述通道的根部的导电阳极表面在通道的开口端的周边的内侧设置放电。

74. 发明授权

US09082700B2 Ultraviolet treatment of metal oxide electrodes 有权
标题翻译：金属氧化物电极的紫外线处理
公开(公告)号：US09082700B2
公开(公告)日：2015-07-14
申请号：US13296191
申请日：2011-11-14
申请人： Sean Andrew Vail , David R. Evans , Wei Pan , Jong-Jan Lee
发明人： Sean Andrew Vail , David R. Evans , Wei Pan , Jong-Jan Lee
IPC分类号： H01L21/44 , H01L21/268 , H01G9/20 , H01L21/02 , H01L29/786
CPC分类号： H01L21/2686 , H01G9/2031 , H01G9/2059 , H01L21/02554 , H01L29/7869 , Y02E10/542
摘要： An ultraviolet treatment method is provided for a metal oxide electrode. A metal oxide electrode is exposed to an ultraviolet (UV) light source in a humid environment. The metal oxide electrode is then treated with a moiety having at least one anchor group, where the anchor group is a chemical group capable of promoting communication between the moiety and the metal oxide electrode. As a result, the moiety is bound to the metal oxide electrode. In one aspect the metal oxide electrode is treated with a photoactive moiety. Exposing the metal oxide electrode to the UV light source in the humid environment induces surface defects in the metal oxide electrode in the form of oxygen vacancies. In response to the humidity, atmospheric water competes favorably with oxygen for dissociative adsorption on the metal oxide electrode surface, and hydroxylation of the metal oxide electrode surface is induced.
摘要翻译：为金属氧化物电极提供紫外线处理方法。金属氧化物电极在潮湿环境中暴露于紫外（UV）光源。然后用具有至少一个锚定基团的部分处理金属氧化物电极，其中锚定基团是能够促进部分和金属氧化物电极之间的连通的化学基团。结果，该部分与金属氧化物电极结合。在一个方面，用光活性部分处理金属氧化物电极。在潮湿环境中将金属氧化物电极暴露于UV光源以氧空位的形式引起金属氧化物电极中的表面缺陷。响应于湿度，大气水与氧反应，在金属氧化物电极表面上进行离解吸附，诱导金属氧化物电极表面的羟基化。

75. 发明授权

US07306962B2 Electroformed metallization 失效
标题翻译：电铸金属化
公开(公告)号：US07306962B2
公开(公告)日：2007-12-11
申请号：US10871938
申请日：2004-06-17
申请人： David R. Evans , John W. Hartzell
发明人： David R. Evans , John W. Hartzell
IPC分类号： H01L21/00
CPC分类号： H01L21/288 , C23C18/1605 , C23C18/165 , C23C18/1657 , C25D1/003 , C25D5/022 , C25D5/50 , H01L21/2885 , H01L21/76885
摘要： A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and substrate surface; forming a strike layer overlying the base layer; forming a top layer overlying the strike layer; selectively etching to remove the top layer overlying the substrate surface, exposing a strike layer surface; and, electroforming a metal structure overlying the strike layer surface. The electroformed metal structure is deposited using an electroplating or electroless deposition process. Typically, the metal is Cu, Au, Ir, Ru, Rh, Pd, Os, Pt, or Ag. The base, strike, and top layers can be deposited using physical vapor deposition (PVD), evaporation, reactive sputtering, or metal organic chemical vapor deposition (MOCVD).
摘要翻译：提供了一种电铸金属集成电路结构的方法。该方法包括：通过层间绝缘体形成诸如通孔或线的开口，暴露衬底表面; 形成覆盖层间绝缘体和衬底表面的基层; 形成覆盖基层的冲击层; 形成覆盖所述冲击层的顶层; 选择性蚀刻以去除覆盖在衬底表面上的顶层，暴露出一层击打层表面; 并且电铸在覆盖着撞击层表面的金属结构。使用电镀或无电沉积工艺沉积电铸金属结构。通常，金属是Cu，Au，Ir，Ru，Rh，Pd，Os，Pt或Ag。可以使用物理气相沉积（PVD），蒸发，反应溅射或金属有机化学气相沉积（MOCVD）来沉积基底，打击和顶层。

76. 发明授权

US07160819B2 Method to perform selective atomic layer deposition of zinc oxide 有权
标题翻译：执行氧化锌选择性原子层沉积的方法
公开(公告)号：US07160819B2
公开(公告)日：2007-01-09
申请号：US11114862
申请日：2005-04-25
申请人： John F. Conley, Jr. , Yoshi Ono , David R. Evans
发明人： John F. Conley, Jr. , Yoshi Ono , David R. Evans
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/042 , C23C16/407 , C23C16/45525 , H01L21/0217 , H01L21/02175 , H01L21/02334 , H01L21/0234 , H01L21/3141
摘要： A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H2O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.
摘要翻译：在准备硅晶片的晶片上的ZnO的选择性ALD的方法; 在其中要抑制ZnO沉积的选定区域中用封闭剂对硅晶片进行图案化，其中封闭剂取自一组封闭剂，包括异丙醇，丙酮和去离子水; 在约140℃至170℃的温度下，使用二乙基锌和H 2 O 2，通过ALD在晶片上沉积ZnO层。并从晶片上除去封闭剂。

77. 发明授权

US06290736B1 Chemically active slurry for the polishing of noble metals and method for same 有权
标题翻译：用于抛光贵金属的化学活性浆料及其方法
公开(公告)号：US06290736B1
公开(公告)日：2001-09-18
申请号：US09247655
申请日：1999-02-09
申请人： David R. Evans
发明人： David R. Evans
IPC分类号： C09G102
CPC分类号： C09G1/02 , C23F3/00
摘要： A slurry and CMP process to polish a noble metal surface is provided. The slurry and polishing process are used to form a damascene, or dual damascene noble metal inlay. Such as inlay is useful is forming an integrated circuit ferroelectric capacitor electrode. The slurry includes a halogen, such as bromine, in a basic aqueous solution to chemically react with the noble metal. With an abrasive added, the slurry is used to polish and remove noble metals from a wafer surface during a CMP process.
摘要翻译：提供了抛光贵金属表面的浆料和CMP工艺。浆料和抛光工艺用于形成镶嵌，或双镶嵌贵金属镶嵌。如嵌体是有用的是形成集成电路的铁电电容器电极。该浆料在碱性水溶液中包含卤素如溴，以与贵金属发生化学反应。加入磨料后，在CMP工艺中，浆料用于在晶片表面上抛光和去除贵金属。

78. 发明授权

US4732865A Self-aligned internal mobile ion getter for multi-layer metallization on integrated circuits 失效
标题翻译：用于集成电路上多层金属化的自对准内部移动离子吸气剂
公开(公告)号：US4732865A
公开(公告)日：1988-03-22
申请号：US915303
申请日：1986-10-03
申请人： David R. Evans , James S. Flores , Susan S. Dottarar
发明人： David R. Evans , James S. Flores , Susan S. Dottarar
IPC分类号： H01L21/283 , H01L21/31 , H01L21/3205 , H01L21/768 , H01L23/29 , H01L23/31 , H01L23/52 , H01L23/532 , H01L21/385 , H01L21/441 , H01L21/467
CPC分类号： H01L23/291 , H01L21/32051 , H01L21/76885 , H01L21/76886 , H01L23/3171 , H01L23/53242 , H01L23/53252 , H01L2924/0002
摘要： A multi-layer metallization method and structure that permits the use of sodium-ion contaminated titanium-tungsten (Ti:W) as a barrier metal with gold conductor metal on a silicon substrate, without significant degradation of device characteristics. After depositing the barrier and conductor metal layers, a layer of phosphorous-silicate glass (PSG) is anisotropically-etched to expose the field oxide and top surface of the conductor metal but leave PSG layer on each sidewall of the metallization structure. The circuit is then annealed at 400.degree. C. for 30 minutes. Then, an adhesion layer (Si.sub.3 N.sub.4) and an insulative layer (SiO.sub.2) are deposited over the metallization structure and field oxide, with the adhesion layer in contact with the top surface of the conductor metal and the gettering composition. The resultant circuit has a field threshold voltage shift comparable to devices made without a metal-ion-contaminated barrier layer and the resultant structure reliably retains the PSG layers in contact with the metallization sidewalls.
摘要翻译：允许在硅衬底上使用钠离子污染的钛 - 钨（Ti：W）作为金导体金属的阻挡金属的多层金属化方法和结构，而不会显着降低器件特性。在沉积阻挡层和导体金属层之后，各向异性蚀刻一层磷硅酸盐玻璃（PSG），以露出导体金属的场氧化物和顶表面，但在金属化结构的每个侧壁上留下PSG层。然后将电路在400℃退火30分钟。然后，在金属化结构和场氧化物上沉积粘合层（Si 3 N 4）和绝缘层（SiO 2），其中粘合层与导体金属的顶表面和吸气组合物接触。所得到的电路具有与没有金属离子污染的阻挡层制成的器件相当的场阈值电压偏移，并且所得结构可靠地保持PSG层与金属化侧壁接触。

79. 发明授权

US08810897B2 Method for improving metallic nanostructure stability 有权
标题翻译：提高金属纳米结构稳定性的方法
公开(公告)号：US08810897B2
公开(公告)日：2014-08-19
申请号：US13434548
申请日：2012-03-29
申请人： Akinori Hashimura , Liang Tang , David R. Evans
发明人： Akinori Hashimura , Liang Tang , David R. Evans
IPC分类号： G02B26/00 , G02F1/167
CPC分类号： G02F1/167 , B05D5/12 , G02F1/1334 , G02F1/13439 , G02F1/23 , G02F2202/36 , G02F2203/10 , G02F2203/34
摘要： A method is provided for improving metallic nanostructure stability. The method provides a substrate, and using a physical vapor deposition (PVD) process for example, deposits metallic nanostructures having a first diameter overlying the substrate. Some examples of metallic nanostructures include Ag, Au, and Al. The metallic nanostructures are annealed in an atmosphere including an inert gas and H2. The annealing temperature is less than the melting temperature the metal material in bulk form. In response to the annealing, stabilized metallic nanostructures are formed. If the stabilized metallic nanostructures are exposed to an ambient air environment the stabilized metallic nanostructure maintain the first diameter. Typically, the metallic nanostructures are initially formed having a rectangular shape with corners. After annealing, the stabilized metallic nanostructures have a dome shape.
摘要翻译：提供了一种提高金属纳米结构稳定性的方法。该方法提供基底，并且例如使用物理气相沉积（PVD）工艺沉积具有覆盖在基底上的第一直径的金属纳米结构。金属纳米结构的一些实例包括Ag，Au和Al。金属纳米结构在包括惰性气体和H 2的气氛中退火。退火温度小于块状形式的金属材料的熔融温度。响应于退火，形成稳定的金属纳米结构。如果稳定的金属纳米结构暴露于环境空气环境，则稳定的金属纳米结构保持第一直径。通常，金属纳米结构最初形成为具有角部的矩形形状。退火后，稳定的金属纳米结构具有圆顶形状。

80. 发明申请

US20130077036A1 Method for Improving Metallic Nanostructure Stability 有权
标题翻译：改善金属纳米结构稳定性的方法
公开(公告)号：US20130077036A1
公开(公告)日：2013-03-28
申请号：US13434548
申请日：2012-03-29
申请人： Akinori Hashimura , Liang Tang , David R. Evans
发明人： Akinori Hashimura , Liang Tang , David R. Evans
IPC分类号： B05D5/12 , G02F1/1343
CPC分类号： G02F1/167 , B05D5/12 , G02F1/1334 , G02F1/13439 , G02F1/23 , G02F2202/36 , G02F2203/10 , G02F2203/34
摘要： A method is provided for improving metallic nanostructure stability. The method provides a substrate, and using a physical vapor deposition (PVD) process for example, deposits metallic nanostructures having a first diameter overlying the substrate. Some examples of metallic nanostructures include Ag, Au, and Al. The metallic nanostructures are annealed in an atmosphere including an inert gas and H2. The annealing temperature is less than the melting temperature the metal material in bulk form. In response to the annealing, stabilized metallic nanostructures are formed. If the stabilized metallic nanostructures are exposed to an ambient air environment the stabilized metallic nanostructure maintain the first diameter. Typically, the metallic nanostructures are initially formed having a rectangular shape with corners. After annealing, the stabilized metallic nanostructures have a dome shape.
摘要翻译：提供了一种提高金属纳米结构稳定性的方法。该方法提供基底，并且例如使用物理气相沉积（PVD）工艺沉积具有覆盖在基底上的第一直径的金属纳米结构。金属纳米结构的一些实例包括Ag，Au和Al。金属纳米结构在包括惰性气体和H 2的气氛中退火。退火温度小于块状形式的金属材料的熔融温度。响应于退火，形成稳定的金属纳米结构。如果稳定的金属纳米结构暴露于环境空气环境，则稳定的金属纳米结构保持第一直径。通常，金属纳米结构最初形成为具有角部的矩形形状。退火后，稳定的金属纳米结构具有圆顶形状。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式