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71. 发明授权

US4856407A Action mechanism for a keyboard of an electronic piano 失效
标题翻译：电子钢琴键盘的动作机构
公开(公告)号：US4856407A
公开(公告)日：1989-08-15
申请号：US242575
申请日：1988-09-12
申请人： Masanori Katsuta , Tsutomu Yamaguchi
发明人： Masanori Katsuta , Tsutomu Yamaguchi
IPC分类号： G10C3/20
CPC分类号： G10C3/20
摘要： An action mechanism for a keyboard of an electronic piano which is capable of producing a touch that is nearly equal to that of an ordinary piano. The action mechanism comprises an action spring including a friction spring portion to produce a friction force which always opposes depression and restoring movements of key members.
摘要翻译：一种能够产生几乎等于普通钢琴的触摸的电子钢琴的键盘的动作机构。动作机构包括动作弹簧，该动作弹簧包括摩擦弹簧部分，以产生总是与凹陷相对的摩擦力并恢复关键部件的移动。

72. 发明授权

US3960662A Process for the production of 7-amino-cephem compounds 失效
标题翻译：生产7-氨基头孢烯化合物的方法
公开(公告)号：US3960662A
公开(公告)日：1976-06-01
申请号：US543639
申请日：1975-01-23
申请人： Tetsuo Matsuda , Tsutomu Yamaguchi , Tadashiro Fujii , Kunio Matsumoto , Masataka Morishita , Mitsuru Fukushima , Yuzo Shibuya
发明人： Tetsuo Matsuda , Tsutomu Yamaguchi , Tadashiro Fujii , Kunio Matsumoto , Masataka Morishita , Mitsuru Fukushima , Yuzo Shibuya
IPC分类号： C07D501/18 , C12P35/02 , C12D13/06
CPC分类号： C12P35/02 , Y10S435/822 , Y10S435/874
摘要： 7-Amino-cephem compounds are produced from 7-substituted-cephem compounds by the enzymatic action of microorganisms Comamonas sp. SY-77-1 FERM-P 2410 or Pseudomonas ovalis ATCC 950.
摘要翻译： 7-氨基头孢烯化合物由7-取代的头孢烯化合物通过微生物Comamonas sp的酶促作用产生。 SY-77-1 FERM-P 2410或椭圆形假单胞菌ATCC 950。

73. 发明授权

US07807490B2 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US07807490B2
公开(公告)日：2010-10-05
申请号：US12216928
申请日：2008-07-14
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
摘要翻译：提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

74. 发明授权

US07769069B2 Integrated semiconductor laser diode module and manufacturing method of the same 失效
标题翻译：集成半导体激光二极管模块及其制造方法相同
公开(公告)号：US07769069B2
公开(公告)日：2010-08-03
申请号：US11067472
申请日：2005-02-28
申请人： Yasuhiko Nomura , Yasuyuki Bessho , Masayuki Hata , Tsutomu Yamaguchi
发明人： Yasuhiko Nomura , Yasuyuki Bessho , Masayuki Hata , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/1082 , H01S5/2009 , H01S5/221 , H01S5/222 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/3436 , H01S5/4043 , H01S5/4087
摘要： Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LD 2 wafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching. A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.
摘要翻译：整合半导体激光二极管和GaP半导体激光二极管的集成半导体激光二极管模块的寿命提高以及激光二极管的激光特性。在由GaN衬底上形成的氮化物半导体结构和由铝镓铟磷化物半导体结构制成的LD 2晶片制成的LD 1晶片的接合步骤之前，氮化物半导体结构的谐振器的面通过蚀刻形成。在接合步骤之后，通过切割形成铝镓铟磷化物半导体结构的谐振器的一个面。晶片被接合，使得氮化物半导体结构的谐振器的面和磷化铝镓磷化物半导体结构在谐振器的长度方向上不对准。

75. 发明授权

US07732686B2 Stopper for keyboard-based musical instruments 失效
标题翻译：基于键盘的乐器的挡板
公开(公告)号：US07732686B2
公开(公告)日：2010-06-08
申请号：US11628254
申请日：2005-05-24
申请人： Tsutomu Yamaguchi
发明人： Tsutomu Yamaguchi
IPC分类号： G10C3/18
CPC分类号： G10H1/346 , G10C3/12
摘要： A stopper for a keyboard-based musical instrument is provided for accomplishing a good stopping feeling of a pivotable member, thereby making it possible to improve a touch feeling and restrain collision noise and other noise. A stopper 7 for a keyboard-based musical instrument with which a pivotable member 6 comes into contact while said pivotal member pivotally moves in association with a key touch, thereby restraining the pivotal movement of said pivotable member 6, comprises a mass 26, a first cushion 25 laminated on a front side of said mass 26, and a second cushion 27 laminated on a back side of said mass 26. Preferably, the mass 26 is made of a metal, and the first cushion 25 is harder than the second cushion 27.
摘要翻译：提供了一种用于基于键盘的乐器的止动器，用于实现可枢转构件的良好的停止感，从而可以改善触感并抑制碰撞噪声和其他噪音。用于基于键盘的乐器的止动器7，当枢转构件与钥匙接触相关联地枢转运动时，可枢转构件6与其接触，从而限制所述可枢转构件6的枢转运动，包括质量块26，第一层叠在所述物料26的前侧的衬垫25以及层叠在所述质量体26的背面上的第二衬垫27.优选地，质量体26由金属制成，第一衬垫25比第二衬垫27硬。

76. 发明授权

US07655484B2 Nitride-based semiconductor device and method of fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07655484B2
公开(公告)日：2010-02-02
申请号：US11114193
申请日：2005-04-26
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
摘要翻译：提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

77. 发明申请

US20090262772A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20090262772A1
公开(公告)日：2009-10-22
申请号：US12492517
申请日：2009-06-26
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

78. 发明授权

US07589357B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07589357B2
公开(公告)日：2009-09-15
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

79. 发明授权

US07550673B2 Electrode pattern and wire bonding method 有权
标题翻译：电极图案和引线接合方法
公开(公告)号：US07550673B2
公开(公告)日：2009-06-23
申请号：US12042650
申请日：2008-03-05
申请人： Yoshihiro Hisa , Tsutomu Yamaguchi , Hideyuki Tanaka , Kazunori Matsuo
发明人： Yoshihiro Hisa , Tsutomu Yamaguchi , Hideyuki Tanaka , Kazunori Matsuo
IPC分类号： H01R4/18
CPC分类号： H01R43/0221 , H01L2924/01074 , H01L2924/01079 , Y10T29/49218
摘要： An electrode pattern for wire-bonding includes: a wire-bonding reference pattern indicating a reference position for determination of a wire-bonding position; and a wire-bonding recognition pattern. The distance between the reference position and a wire-bonding metal portion bonded to the electrode pattern and the distance between the wire-bonding recognition pattern and the wire-bonding metal portion satisfy predetermined relationships.
摘要翻译：用于引线接合的电极图案包括：指示用于确定引线接合位置的基准位置的引线接合基准图; 和引线键合识别图案。接合到电极图案的基准位置与引线键合金属部分之间的距离以及引线接合识别图案和引线接合金属部分之间的距离满足预定关系。

80. 发明申请

US20080310473A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20080310473A1
公开(公告)日：2008-12-18
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/22 , H01S5/20
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

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