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71. 发明授权

US07535682B2 Magneto-resistance element and thin film magnetic head with improved heat reliability 有权
标题翻译：磁阻元件和薄膜磁头，提高了热可靠性
公开(公告)号：US07535682B2
公开(公告)日：2009-05-19
申请号：US11519854
申请日：2006-09-13
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , H01F1/408 , H01F10/1936 , H01F10/3272
摘要： A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.
摘要翻译：根据本发明的磁阻元件具有固定磁化方向的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在被钉扎层和自由层之间的非磁性间隔层，至少被钉扎层或自由层包括由组成式X2YZ（其中X为贵金属元素，Y为过渡层）的Heusler合金层 Mn，V或Ti基的金属，Z是III族至V族的元素），组成X的一部分被Co替代，组合物X中的Co的原子组成比为0.5〜0.85。

72. 发明申请

US20080112091A1 Current-confined-path type magnetoresistive element and method of manufacturing same 审中-公开
标题翻译：电流限制型磁阻元件及其制造方法
公开(公告)号：US20080112091A1
公开(公告)日：2008-05-15
申请号：US11896707
申请日：2007-09-05
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A spacer layer of an MR element includes: a nonmagnetic metal layer disposed on a pinned layer; a protection layer disposed on the nonmagnetic metal layer to prevent oxidation or nitriding of the nonmagnetic metal layer; an island-shaped insulating layer disposed on the protection layer; and a coating layer covering these layers. When seen in a direction perpendicular to the top surface of the pinned layer, there are formed in the spacer layer a region where the insulating layer is present and a region where the insulating layer is absent. A thickness of the protection layer taken in at least part of the region where the insulating layer is absent is zero or smaller than a thickness of the protection layer taken in the region where the insulating layer is present.
摘要翻译： MR元件的间隔层包括：设置在钉扎层上的非磁性金属层; 设置在所述非磁性金属层上以防止所述非磁性金属层的氧化或氮化的保护层; 设置在保护层上的岛状绝缘层; 以及覆盖这些层的涂层。当在垂直于被钉扎层的顶表面的方向上观察时，在间隔层中形成绝缘层存在的区域和绝缘层不存在的区域。在绝缘层不存在的区域的至少一部分中取出的保护层的厚度为保护层的厚度在与绝缘层存在的区域相同的厚度以上。

73. 发明申请

US20080019060A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080019060A1
公开(公告)日：2008-01-24
申请号：US11762457
申请日：2007-06-13
申请人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01F10/3295 , H01L43/10
摘要： The invention provides a magneto-resistive effect device having a CPP (current perpendicular to plane) structure comprising a nonmagnetic spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said nonmagnetic spacer layer sandwiched between them, with a sense current applied in a stacking direction, wherein said free layer functions such that its magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a Heusler alloy layer, wherein an Fe layer is formed on one of both planes of said Heusler alloy layer in the stacking direction, wherein said one plane is near to at least a nonmagnetic spacer layer side, and said fixed magnetization layer is made up of a multilayer structure including a Heusler alloy layer, wherein Fe layers are formed on both plane sides of said Heusler alloy layer in the stacking direction with said Heusler alloy layer sandwiched between them. It is thus possible to prevent diffusion of Co atoms contained in the CoFe layer into the Heusler alloy layer, enabling the decrease in the spin polarizability of the Heusler alloy layer to be hold back and achieving a high MR ratio.
摘要翻译：本发明提供一种具有包含非磁性间隔层的CPP（电流垂直于平面）结构的磁阻效应器件，以及夹在它们之间的所述非磁性间隔层彼此堆叠的固定磁化层和自由层，具有感觉电流施加在层叠方向上，其中所述自由层的功能使得其磁化方向根据外部磁场而变化，并且由包括Heusler合金层的多层结构构成，其中在两个平面之一上形成Fe层的所述Heusler合金层，其中所述一个平面接近至少一个非磁性间隔层侧，并且所述固定磁化层由包括Heusler合金层的多层结构构成，其中在两者上形成Fe层所述Heusler合金层在层叠方向上的平面侧与所述Heusler合金层夹在它们之间。因此，可以防止CoFe层中所含的Co原子扩散到Heusler合金层中，能够抑制Heusler合金层的自旋极化率的降低并获得高的MR比。

74. 发明申请

US20070291422A1 Method for manufacturing magnetic field detecting element, utilizing diffusion of metal 有权
标题翻译：利用金属扩散制造磁场检测元件的方法
公开(公告)号：US20070291422A1
公开(公告)日：2007-12-20
申请号：US11708537
申请日：2007-02-21
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
IPC分类号： G11B5/39 , G11B5/33 , G11B5/48
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/12 , Y10T428/1121
摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.
摘要翻译：一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或者由其合金。

75. 发明申请

US20070217087A1 Magnetic thin film and magnetoresistance effect element having a heusler alloy layer containing an additive element 审中-公开
标题翻译：磁性薄膜和磁阻效应元件具有包含添加元素的赫斯勒合金层
公开(公告)号：US20070217087A1
公开(公告)日：2007-09-20
申请号：US11723143
申请日：2007-03-16
申请人： Kei Hirata , Keita Kawamori , Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Kei Hirata , Keita Kawamori , Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01L27/222 , H01L43/10
摘要： A magnetic thin film has a layer which is formed of an alloy having a ordered crystal structure whose composition formula is represented by XYZ or X2YZ (where X is one or more than one of the elements selected from the group consisting of Co, Ir, Rh, Pt, and Cu, Y is one or more than one of the elements selected from the group consisting of V, Cr, Mn, and Fe, and Z is one or more than one of the elements selected the group consisting of Al, Si, Ge, As, Sb, Bi, In, Ti, and Pb). The alloy contains at least one additive element which is not included in the composition formula of the alloy and which has a Debye temperature that is equal to or less than 300K.
摘要翻译：磁性薄膜具有由具有有序晶体结构的合金形成的层，其组成式由XYZ或X 2 YZ表示（其中X是选自以下的元素中的一种或多于一种元素：由Co，Ir，Rh，Pt和Cu组成的组，Y是选自V，Cr，Mn和Fe中的一种或多种元素，Z是一种或多于一种元素选自Al，Si，Ge，As，Sb，Bi，In，Ti和Pb组成的组）。该合金含有至少一种添加元素，其不包括在合金的组成式中，并且德拜温度等于或小于300K。

76. 发明申请

US20090274837A1 METHOD OF PRODUCING THE MAGNETORESISTIVE DEVICE OF THE CPP TYPE 审中-公开
标题翻译：生产CPP型磁性装置的方法
公开(公告)号：US20090274837A1
公开(公告)日：2009-11-05
申请号：US12112598
申请日：2008-04-30
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3903 , H01L43/12
摘要： The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates. There is also a limited dispersion of the MR change rate with extremely improved reliability.
摘要翻译：本发明提供一种用于形成磁阻器件的传感器位置的方法，其中依次形成第一铁磁层和非磁性中间层，然后对非磁性中间层的表面进行表面处理，之后将第二铁磁体层在非磁性中间层的如此处理的表面上形成铁磁层。表面处理通过使用真空使修饰元件在非磁性中间层的表面上正确敲击的方法来实现。非磁性中间层主要由氧化物或氮化物构成，改性元素为熔点为500℃以下的低熔点元素。因此，可以减少旋转散射，同时减少用于传感器部位的铁磁层的表面的氧化或氮化，由此实现高MR变化率。 MR变化率的有限分散也具有极高的可靠性。

77. 发明申请

US20090174971A1 CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS 审中-公开
标题翻译：具有磁性层对的CPP型MAGNETO电阻效应元件
公开(公告)号：US20090174971A1
公开(公告)日：2009-07-09
申请号：US11968788
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.
摘要翻译：磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间的层构造层和NiFe层。

78. 发明授权

US07826180B2 Magneto-resistive effect device of the CPP structure, and magnetic disk system 有权
标题翻译： CPP结构的磁阻效应器，磁盘系统
公开(公告)号：US07826180B2
公开(公告)日：2010-11-02
申请号：US11768435
申请日：2007-06-26
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3967 , H01L43/10
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿堆叠方向施加的感测电流，其中自由层起着使得磁化方向取决于外部磁场的作用，并且间隔层包括第一和第二非磁性金属层，每个非磁性金属层由非磁性金属材料和介于第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化锌，氧化锡，氧化铟和氧化铟锡（ITO ），第一非磁性金属层由Cu制成，第二非磁性金属层基本上由Zn制成。因此，MR变化率和耐热性比以前更加改善。

79. 发明申请

US20090002893A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP STRUCTURE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP结构和磁盘系统的磁阻效应器件
公开(公告)号：US20090002893A1
公开(公告)日：2009-01-01
申请号：US11768435
申请日：2007-06-26
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
IPC分类号： G11B5/33 , G11B5/147 , G11B5/48
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3967 , H01L43/10
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨型磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿堆叠方向施加的感测电流，其中自由层起着使得磁化方向取决于外部磁场的作用，并且间隔层包括第一和第二非磁性金属层，每个非磁性金属层由非磁性金属材料和介于第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化锌，氧化锡，氧化铟和氧化铟锡（ITO ），第一非磁性金属层由Cu制成，第二非磁性金属层基本上由Zn制成。因此，MR变化率和耐热性比以前更加改善。

80. 发明授权

US07859798B2 Magnetic thin film having non-magnetic spacer layer that is provided with SnO2 layer 有权
标题翻译：具有设置有SnO 2层的非磁性间隔层的磁性薄膜
公开(公告)号：US07859798B2
公开(公告)日：2010-12-28
申请号：US11676969
申请日：2007-02-20
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is sandwiched between said the pinned layer and the free layer, wherein sense current is configured to flow in a direction that is perpendicular to film surfaces of the pinned layer, the non-magnetic spacer layer, and the free layer. The non-magnetic spacer layer has a first layer which includes SnO2, and a pair of second layers which are provided to sandwich the first layer, the second layers being made of a material which exhibits a higher corrosion potential than Sn.
摘要翻译：磁性薄膜具有：磁化方向相对于外部磁场固定的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及夹在所述被钉扎层和所述自由层之间的非磁性间隔层，其中，感测电流被配置为沿着与所述被钉扎层，所述非磁性间隔层的膜表面垂直的方向流动，层。非磁性间隔层具有包括SnO 2的第一层和设置成夹持第一层的一对第二层，第二层由表现出比Sn更高的腐蚀电位的材料制成。

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