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    • 5. 发明授权
    • Magnetoresistive element including heusler alloy layer
    • 磁阻元件包括heusler合金层
    • US07808748B2
    • 2010-10-05
    • US11709148
    • 2007-02-22
    • Tomohito MizunoYoshihiro TsuchiyaKeita Kawamori
    • Tomohito MizunoYoshihiro TsuchiyaKeita Kawamori
    • G11B5/48
    • G01R33/093B82Y10/00B82Y25/00G11B5/3929G11B2005/3996
    • A pinned layer of an MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. A free layer of the MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. Each of these two Heusler alloy layers is made of a CoMnSi alloy having an Mn content higher than 25 atomic percent and lower than or equal to 40 atomic percent, and contains a principal component having a B2 structure in which Co atoms are placed at body-centered positions of unit cells and Mn atoms or Si atoms are randomly placed at vertexes of the unit cells.
    • MR元件的被钉扎层包括由具有体心立方结构的磁性合金层制成的下层磁性层,以及形成在下面的磁性层上的Heusler合金层。 MR元件的自由层包括由具有体心立方结构的磁性合金层制成的下层磁性层和形成在下面的磁性层上的Heusler合金层。 这两个Heusler合金层中的每一个由Mn含量高于25原子%且低于或等于40原子%的CoMnSi合金制成,并且包含具有其中Co原子被置于体态的B2结构的主要成分, 单元电池的中心位置和Mn原子或Si原子随机放置在单位晶胞的顶点。