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1. 发明授权

US08472150B2 Magneto-resistive effect device and magnetic disk system 有权
标题翻译：磁阻效应器和磁盘系统
公开(公告)号：US08472150B2
公开(公告)日：2013-06-25
申请号：US11968911
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3993 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01L43/10
摘要： A giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of the spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc.
摘要翻译：具有包括间隔层的CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），以及间隔层彼此叠置的第一铁磁层和第二铁磁层，其中所述间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及插入在所述第一非磁性金属层和所述第二非磁性金属层之间的半导体氧化物层非磁性金属层，形成间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，添加金属不太可能被氧化成锌。

2. 发明授权

US08310791B2 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US08310791B2
公开(公告)日：2012-11-13
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

3. 发明授权

US08031444B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US08031444B2
公开(公告)日：2011-10-04
申请号：US12255105
申请日：2008-10-21
申请人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
发明人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.
摘要翻译：在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有至少一种选自以下的金属元素的掺杂剂：的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

4. 发明授权

US07944650B2 Magnetoresistive element including layered film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括层间膜接触间隔层的周边
公开(公告)号：US07944650B2
公开(公告)日：2011-05-17
申请号：US11898335
申请日：2007-09-11
申请人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.
摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。磁阻元件还包括接触间隔层的周边的层状膜。间隔层包括使用氧化物半导体作为材料形成的半导体层。层叠膜包括依次堆叠的第一层，第二层和第三层。第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。第三层是绝缘层。

5. 发明申请

US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20100232074A1
公开(公告)日：2010-09-16
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

6. 发明授权

US07739787B2 Method of manufacturing a magnetoresistive element 失效
标题翻译：制造磁阻元件的方法
公开(公告)号：US07739787B2
公开(公告)日：2010-06-22
申请号：US11715341
申请日：2007-03-08
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
摘要翻译：在MR元件中，被钉扎层和自由层中的每一个包括Heusler合金层。 Heusler合金层具有两个形状为四边形并面向相反方向的表面。 Heusler合金层包括接触两个表面之一的四个侧面的一个晶粒。在制造MR元件的方法中，形成并构图成为MR元件的层状膜，然后对图案化的层叠膜进行热处理，使得包含在作为Heusler合金层的膜中的晶粒在从而形成层状膜生长，并且形成一个接触作为Heusler合金层的膜的一个表面的四面的晶粒。

7. 发明申请

US20090274837A1 METHOD OF PRODUCING THE MAGNETORESISTIVE DEVICE OF THE CPP TYPE 审中-公开
标题翻译：生产CPP型磁性装置的方法
公开(公告)号：US20090274837A1
公开(公告)日：2009-11-05
申请号：US12112598
申请日：2008-04-30
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3903 , H01L43/12
摘要： The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates. There is also a limited dispersion of the MR change rate with extremely improved reliability.
摘要翻译：本发明提供一种用于形成磁阻器件的传感器位置的方法，其中依次形成第一铁磁层和非磁性中间层，然后对非磁性中间层的表面进行表面处理，之后将第二铁磁体层在非磁性中间层的如此处理的表面上形成铁磁层。表面处理通过使用真空使修饰元件在非磁性中间层的表面上正确敲击的方法来实现。非磁性中间层主要由氧化物或氮化物构成，改性元素为熔点为500℃以下的低熔点元素。因此，可以减少旋转散射，同时减少用于传感器部位的铁磁层的表面的氧化或氮化，由此实现高MR变化率。 MR变化率的有限分散也具有极高的可靠性。

8. 发明申请

US20090190270A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090190270A1
公开(公告)日：2009-07-30
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

9. 发明申请

US20090174971A1 CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS 审中-公开
标题翻译：具有磁性层对的CPP型MAGNETO电阻效应元件
公开(公告)号：US20090174971A1
公开(公告)日：2009-07-09
申请号：US11968788
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.
摘要翻译：磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间的层构造层和NiFe层。

10. 发明授权

US08094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system 有权
标题翻译： CCP的磁阻器件（电流垂直于平面）型，具有单域控制磁化，以及相关的磁盘系统
公开(公告)号：US08094420B2
公开(公告)日：2012-01-10
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.
摘要翻译：本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。磁阻单元包括夹在铁磁层之间的非磁性中间层。平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

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