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71. 发明申请

US20070054064A1 Microwave plasma processing method, microwave plasma processing apparatus, and its plasma head 审中-公开
标题翻译：微波等离子体处理方法，微波等离子体处理装置及其等离子体头
公开(公告)号：US20070054064A1
公开(公告)日：2007-03-08
申请号：US10566241
申请日：2004-12-24
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/306 , H05H1/46 , H05H2001/4622 , H05H2001/463
摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).
摘要翻译：微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时物体相对于线性等离子体保持在水平位置。等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

72. 发明申请

US20070020940A1 Method of forming fluorinated carbon film 失效
标题翻译：形成氟化碳膜的方法
公开(公告)号：US20070020940A1
公开(公告)日：2007-01-25
申请号：US10558080
申请日：2004-05-19
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/0212 , C23C16/0245 , C23C16/26 , H01L21/02274 , H01L21/02315 , H01L21/3127
摘要： The present invention is made to solve a problem to improve adhesion between a fluorine-containing carbon film and a foundation film. In order to achieve this object, according to the present invention, a fluorine-containing carbon film forming method of forming a fluorine-containing carbon film on a to-be-processed substrate includes: a first process of carrying out plasma excitation of a rare gas, and carrying out a surface treatment of the to-be-processed substrate with the use of the thus-plasma-excited rare gas with a substrate processing apparatus; and a second process of forming the fluorine-containing carbon film on the to-be-processed substrate, wherein the substrate processing apparatus has a microwave antenna electrically connected to a microwave power source.
摘要翻译：本发明是为了解决提高含氟碳膜和基础膜之间的粘附性的问题而做出的。为了实现该目的，根据本发明，在被处理基板上形成含氟碳膜的含氟碳膜形成方法包括：进行稀有等离子体激发的第一工序利用基板处理装置利用等离子体激发的稀有气体进行被处理基板的表面处理，以及在被处理基板上形成含氟碳膜的第二工序，其中，基板处理装置具有与微波电源电连接的微波天线。

73. 发明申请

US20060289116A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060289116A1
公开(公告)日：2006-12-28
申请号：US11488059
申请日：2006-07-18
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32357 , H01J37/3244
摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a plasma gas supply part for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed, and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.
摘要翻译：等离子体处理装置包括由外壁限定的处理容器，具有用于保持要处理的基板的台，连接到处理容器的抽空系统，用于将等离子体气体供应到处理容器的内部的等离子体气体供应部设置在处理容器上的与要处理的基板相对应的微波天线，以及处理气体供给部，其设置在台面上的待处理基板与等离子体气体供给部之间，以与待处理基板相对，其中处理气体供应部分包括用于通过形成在处理容器内部的等离子体的多个第一孔，能够连接到处理气体源的处理气体通道，与第二孔连通的多个第二孔处理气体通道和与第二孔相对设置的用于扩散从第二孔释放的处理气体的扩散部分。

74. 发明授权

US07115184B2 Plasma processing device 有权
标题翻译：等离子处理装置
公开(公告)号：US07115184B2
公开(公告)日：2006-10-03
申请号：US10276673
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32357 , H01J37/3244
摘要： A plasma processing apparatus includes a processing vessel, a means for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a means for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel, and a process gas supply part comprised of two components. The first component includes a plurality of first apertures for passing through plasma formed in interior of the processing vessel, a process gas passage, and a plurality of second apertures in communication with the process gas passage. The second component includes a plurality of third apertures axially aligned with the first apertures in the first component and diffusion surfaces upon recessed areas of the second component, located opposite to the second apertures in the first component.
摘要翻译：等离子体处理装置包括处理容器，用于保持要处理的基板的装置，耦合到处理容器的抽空系统，用于向处理容器的内部供应等离子体气体的装置，设置在处理容器上的微波天线，以及由两个部件组成的工艺气体供给部。第一部件包括用于穿过形成在处理容器内部的等离子体的多个第一孔，处理气体通道和与处理气体通道连通的多个第二孔。第二部件包括与第一部件中的第一孔轴向对齐的多个第三孔和位于第二部件的与第一部件中的第二孔相对的凹陷区域上的扩散表面。

75. 发明授权

US06893970B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06893970B2
公开(公告)日：2005-05-17
申请号：US10015446
申请日：2001-12-12
申请人： Norio Kanetsuki , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Norio Kanetsuki , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F4/00 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L21/768
CPC分类号： C23F4/00 , H01L21/32136
摘要： According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.
摘要翻译：根据等离子体处理方法，使用供应到处理室中的处理气体从处理气体产生等离子体，并通过等离子体处理放置在处理室中的衬底。衬底包括由等离子体蚀刻的至少两种类型的堆叠膜，并且根据要蚀刻的任何膜，在等离子体产生周期中的处理气体中发生变化。因此，除了主等离子体处理之外的任何处理所需的时间可以缩短，从而可以缩短整个等离子体处理的总时间，从而提高处理速度。

76. 发明申请

US20050092437A1 Plasma processing equipment 审中-公开
标题翻译：等离子体处理设备
公开(公告)号：US20050092437A1
公开(公告)日：2005-05-05
申请号：US10493946
申请日：2003-07-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23C16/511 , H01J37/32 , H01L21/31 , C23F1/00
CPC分类号： C23C16/45568 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J37/3244
摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium.
摘要翻译：等离子体处理装置包括由外壁限定的处理容器，该处理容器具有保持要处理的基板的台，连接到处理容器的抽空系统，设置在处理容器上的作为外部的一部分的微波窗口壁，以便在台架上面对要处理的基板，向处理容器供应等离子体气体的等离子体气体供给部分和与微波对应地设置在处理容器上的微波天线。等离子体气体供给部包括多孔介质，等离子体气体供给部通过多孔介质供给等离子体气体。

77. 发明授权

US06829279B1 Laser oscillating apparatus, exposure apparatus using the same and device fabrication method 有权
标题翻译：激光振荡装置，使用其的曝光装置和装置制造方法
公开(公告)号：US06829279B1
公开(公告)日：2004-12-07
申请号：US09494945
申请日：2000-02-01
申请人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
IPC分类号： H01S500
CPC分类号： G03F7/70025 , H01S3/0315 , H01S3/0385 , H01S3/225
摘要： In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.
摘要翻译：在激光振荡装置中，通过将形成在波导壁上的多个槽引入来自波导的电磁波向激光管激励激光器中的激光气体，通过使从激光气体发出的光共振而产生激光束槽形成为一条直线，使得它们的纵向与波导的纵向方向一致，并且金属壁形成为围绕这些槽。该金属壁形成从激光管壁中的狭缝到窗口的微波通道的间隙，从而将激光管壁与狭缝分开预定距离。

78. 发明授权

US06818852B2 Microwave plasma processing device, plasma processing method, and microwave radiating member 失效
标题翻译：微波等离子体处理装置，等离子体处理方法和微波辐射构件
公开(公告)号：US06818852B2
公开(公告)日：2004-11-16
申请号：US10344761
申请日：2003-02-14
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： B23K900
CPC分类号： H01J37/3222 , H01J37/32192
摘要： A placement stage (24) on which a semiconductor wafer (W) is place is provided within a processing container (22). A microwave is generated by a microwave generator (76), and the microwave is introduced into a process container (22) through a flat antenna member (66). The flat antenna member (66) has a plurality of slots (84) arranged along a plurality of circumferences, and the plurality of circumferences are non-concentric to each other. A distribution of plasma density in the flat antenna member (66) in a radial direction is uniform.
摘要翻译：在处理容器（22）内设置放置有半导体晶片（W）的放置台（24）。由微波发生器（76）产生微波，微波通过平板天线构件（66）引入处理容器（22）。扁平天线构件（66）具有沿着多个圆周布置的多个狭槽（84），并且多个周边彼此不同心。扁平天线构件（66）中的等离子体密度在径向上的分布是均匀的。

79. 发明授权

US06804285B2 Gas supply path structure for a gas laser 有权
标题翻译：气体激光器的供气路径结构
公开(公告)号：US06804285B2
公开(公告)日：2004-10-12
申请号：US09425015
申请日：1999-10-25
申请人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
发明人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
IPC分类号： H01S322
CPC分类号： H01S3/036
摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.
摘要翻译：气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统流体入口和/或在流体出口处。

80. 发明授权

US06801554B1 Laser oscillating apparatus, exposure apparatus, and device fabrication method 有权
标题翻译：激光振荡装置，曝光装置和装置制造方法
公开(公告)号：US06801554B1
公开(公告)日：2004-10-05
申请号：US09531958
申请日：2000-03-21
申请人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobumasa Suzuki , Hiroshi Ohsawa , Nobuyoshi Tanaka , Toshikuni Shinohara , Masaki Hirayama
IPC分类号： H01S300
CPC分类号： H01S3/225 , H01S3/0975
摘要： An excimer laser gas in a laser tube 2 is excited by a microwave introduced from awaveguide 1, and electric field concentration occurs in a slit-shaped gap 3 provided in a plate member 11c, causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.
摘要翻译：激光管2中的准分子激光气体被从波导管1引入的微波激发，并且在设置在板构件11c中的狭缝状间隙3中发生电场浓度，引起等离子体放电。然后等离子体光的相位被调节并且光被共振，以引起准分子激光。这种结构实现了沿着激光发射的长度方向的等离子体激发完全均匀，并且以最小的能量损失实现均匀的激光发射。

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