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1. 发明授权

US06893970B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06893970B2
公开(公告)日：2005-05-17
申请号：US10015446
申请日：2001-12-12
申请人： Norio Kanetsuki , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Norio Kanetsuki , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F4/00 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L21/768
CPC分类号： C23F4/00 , H01L21/32136
摘要： According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.
摘要翻译：根据等离子体处理方法，使用供应到处理室中的处理气体从处理气体产生等离子体，并通过等离子体处理放置在处理室中的衬底。衬底包括由等离子体蚀刻的至少两种类型的堆叠膜，并且根据要蚀刻的任何膜，在等离子体产生周期中的处理气体中发生变化。因此，除了主等离子体处理之外的任何处理所需的时间可以缩短，从而可以缩短整个等离子体处理的总时间，从而提高处理速度。

2. 发明授权

US06527908B2 Plasma process apparatus 失效
公开(公告)号：US06527908B2
公开(公告)日：2003-03-04
申请号：US09813147
申请日：2001-03-21
申请人： Norio Kanetsuki , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Norio Kanetsuki , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , C23C16/4401 , C23C16/511
摘要： A plasma process apparatus capable of preventing generation of plasma in an unwanted location and performing uniform plasma processing with stability is obtained. The plasma process apparatus includes a processing chamber having an internal wall surface; a microwave radiating member having one wall surface and the other wall surface that faces the internal wall surface of the processing chamber, and being disposed such that a space is formed between the other wall surface and a portion of the internal wall surface, and propagating and radiating microwaves within the processing chamber; and a reactive gas supply member, including a reactive gas supply passage having a space formed between the other wall surface of the microwave radiating member and the internal wall surface; and a microwave transmission preventing member disposed on a region, which faces the reactive gas supply passage, of the other wall surface of the microwave radiating member.

3. 发明申请

US20060150914A1 Plasma process device 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060150914A1
公开(公告)日：2006-07-13
申请号：US10545355
申请日：2004-02-20
申请人： Naoko Yamamoto , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Naoko Yamamoto , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32238
摘要： A plasma processing apparatus includes: a processing chamber; an inlet waveguide having an interior space in which a first standing wave of a microwave is formed by means of resonance; a dielectric within which a second standing wave of the microwave is formed by means of resonance; and a slot antenna having a slot through which the microwave is passed from the interior space to the dielectric. The slot is generally located at a point where the position of a loop in the first standing wave orthogonally projected to the slot antenna coincides with the position of a loop in the second standing wave orthogonally projected to the slot antenna. The present invention provides a plasma processing apparatus that improves the propagation efficiency of a microwave passed through an aperture of the slot antenna, thereby allowing microwave energy to be efficiently introduced into a processing chamber.
摘要翻译：一种等离子体处理装置，包括：处理室; 具有通过谐振形成微波的第一驻波的内部空间的入口波导; 通过谐振形成微波的第二驻波的电介质; 以及具有狭槽的缝隙天线，微波从该槽从内部空间通过电介质。槽通常位于正交投影到缝隙天线的第一驻波中的环的位置与正交投影到缝隙天线的第二驻波中的环的位置重合的点。本发明提供一种等离子体处理装置，其提高通过缝隙天线的孔径的微波的传播效率，从而使微波能量被有效地引入处理室。

4. 发明授权

US06866747B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06866747B2
公开(公告)日：2005-03-15
申请号：US10843004
申请日：2004-05-10
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H1/46 , B23K10/00 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/30 , H05H1/00 , C23C16/00
CPC分类号： B23K10/003 , B23K2101/40
摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
摘要翻译：在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

5. 发明授权

US06620290B2 Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06620290B2
公开(公告)日：2003-09-16
申请号：US09758292
申请日：2001-01-12
申请人： Tatsushi Yamamoto , Masaya Okamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Tatsushi Yamamoto , Masaya Okamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , C23C16/511
摘要： A plurality of microwave introduction windows are placed at the top wall of the reaction chamber. Microwaves of the same power are introduced into, e.g., two microwave introduction windows that are equivalent in location relationship with respect to the sidewall of the reaction chamber, while microwaves of different power are introduced into, e.g., two microwave introduction windows that are non-equivalent in location relationship with respect to the sidewall. Thus, a cost-effective plasma process apparatus is obtained which can realize uniform plasma processing even if the plasma being generated within the reaction chamber has varied load impedance.
摘要翻译：多个微波引入窗口放置在反应室的顶壁处。相同功率的微波被引入到例如两个相对于反应室的侧壁的位置关系相等的微波引入窗口中，而不同功率的微波被引入到例如两个微波引入窗口中，等同于相对于侧壁的位置关系。因此，即使在反应室内产生的等离子体具有变化的负载阻抗，也可获得能够实现均匀等离子体处理的成本有效的等离子体处理装置。

6. 发明授权

US06446573B2 Plasma process device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06446573B2
公开(公告)日：2002-09-10
申请号：US09925572
申请日：2001-08-09
申请人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
发明人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/511 , H01J37/3244
摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
摘要翻译：可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供应通道。微波引导装置引导微波进入处理室。淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。反应气体供给通路位于喷淋板的上表面，将反应气体供给到气体导入孔。反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。

7. 发明授权

US06286454B1 Plasma process device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06286454B1
公开(公告)日：2001-09-11
申请号：US09583161
申请日：2000-05-30
申请人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
发明人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/511 , H01J37/3244
摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
摘要翻译：可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供给通道。微波引导装置引导微波进入处理室。淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。反应气体供给通道位于淋浴板的上表面上，并将反应气体供给到气体入口孔。反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。

8. 发明授权

US06753496B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06753496B2
公开(公告)日：2004-06-22
申请号：US10010383
申请日：2001-12-07
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B23K1000
CPC分类号： B23K10/003 , B23K2101/40
摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
摘要翻译：在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

9. 发明授权

US06726802B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06726802B2
公开(公告)日：2004-04-27
申请号：US10211498
申请日：2002-08-02
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32266
摘要： A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.
摘要翻译：等离子体处理装置包括：槽板，其具有用于将微波从波导传递到微波入口窗口的槽形区域;以及槽板驱动单元，其驱动槽板以改变槽板相对于微波入口的位置窗口。狭缝板因此相对于微波入口窗移动，以改变微波通过的槽口的位置，数量和面积中的至少一个。因此，等离子体处理装置即使在待处理的大面积基板或晶片上的膜由不同的材料制成或由不同材料的层构成的叠层膜将被处理时，即使处理条件显着变化，也能确保均匀的等离子体处理。

10. 发明授权

US06638392B2 Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06638392B2
公开(公告)日：2003-10-28
申请号：US09730739
申请日：2000-12-07
申请人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H01J37/3244
摘要： A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.
摘要翻译：等离子体处理装置包括在室内发射等离子体的电介质板和用于支撑电介质板的电介质板支撑构件。在电介质板支撑构件上设置有用于向反应室内部供应反应气体的多个气体导入孔。气体导入孔的出口在与基板8的表面相对的一侧开口，并布置在电介质板5外侧的周边区域。接地电位施加到室盖和电介质板支撑构件，偏压为施加到基底。因此，可以获得能够使用均匀等离子体均匀地处理大面积的基板的低成本等离子体处理装置。

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