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71. 发明授权

US5891758A Semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US5891758A
公开(公告)日：1999-04-06
申请号：US962395
申请日：1997-10-31
申请人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
发明人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
IPC分类号： H01L23/12 , H01L21/56 , H01L21/68 , H01L23/31 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/568 , H01L21/565 , H01L23/3107 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49109 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/18165 , Y10T29/49169
摘要： A method of manufacturing a semiconductor device includes the steps of: mounting a semiconductor chip on a holding board having electrode accommodation recesses formed thereon, and mounting electrode members to the electrode accommodation recesses, the electrode members being formed separately from the semiconductor element; electrically connecting electrode pads formed on the semiconductor chip with the electrode members; forming a resin package for sealing the semiconductor chip on the holding board by using a die, the holding board serving as a part of the die; and separating the resin package including the electrode members from the holding board. A semiconductor device includes: a semiconductor chip; a resin package for sealing the semiconductor chip; electrode members which are embedded in and held by the resin package and which are partly exposed from a mounting surface so as to form external connection terminals; and connecting parts electrically connecting electrode pads on the semiconductor chip with the electrode members.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将半导体芯片安装在其上形成有电极容纳凹部的保持板上，以及将电极构件安装到电极容置凹部，电极构件与半导体元件分开形成; 将形成在半导体芯片上的电极焊盘与电极部件电连接; 通过使用模具形成用于将所述保持板上的半导体芯片密封的树脂封装，所述保持板用作所述管芯的一部分; 以及将包括电极构件的树脂封装从保持板分离。半导体器件包括：半导体芯片; 用于密封半导体芯片的树脂封装; 电极构件，其嵌入并保持在树脂封装中，并且从安装表面部分露出以形成外部连接端子; 以及将半导体芯片上的电极焊盘与电极部件电连接的部分。

72. 发明授权

US5458755A Anodization apparatus with supporting device for substrate to be treated 失效
标题翻译：具有待处理基板的支撑装置的阳极氧化装置
公开(公告)号：US5458755A
公开(公告)日：1995-10-17
申请号：US148341
申请日：1993-11-08
申请人： Yasutomo Fujiyama , Mitsuhiro Ishii , Senju Kanbe , Takao Yonehara , Toru Takisawa , Akira Okita , Kiyofumi Sakaguchi , Takanori Watanabe , Kazuo Kokumai
发明人： Yasutomo Fujiyama , Mitsuhiro Ishii , Senju Kanbe , Takao Yonehara , Toru Takisawa , Akira Okita , Kiyofumi Sakaguchi , Takanori Watanabe , Kazuo Kokumai
IPC分类号： C25D5/02 , C25D17/08 , C25D17/06 , C25D21/00
CPC分类号： C25D11/32 , C25D11/005 , C25D17/004 , C25D17/06 , C25D5/022
摘要： An anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the semiconductor substrate between a pair of electrodes in an electrolytic solution and applying a voltage across the pair of electrodes. The anodization apparatus includes an elastic sealing member for supporting a peripheral portion of the semiconductor substrate such that a surface portion of a semiconductor substrate remains exposed, a support jig which includes a tapered hollow portion for supporting the sealing member, and a device for introducing a fluid of gas or liquid into the tapered hollow portion. When the fluid is introduced, the sealing member is pressed against and brought into hermetic contact with the tapered hollow portion and with the entire peripheral portion of the semiconductor substrate such that the electrolytic solution is separated into electrically isolated parts by coordination between the semiconductor substrate, the sealing member, and the support jig. Anodization of the semiconductor substrate may then be carried out, such as by producing a porous silicon layer on the surface of the semiconductor substrate.
摘要翻译：一种阳极氧化装置，用于通过将半导体衬底支撑在电解液中的一对电极之间并在一对电极之间施加电压来阳极氧化半导体衬底的表面。阳极氧化装置包括用于支撑半导体衬底的周边部分使得半导体衬底的表面部分保持露出的弹性密封构件，包括用于支撑密封构件的锥形中空部分的支撑夹具，以及用于引入气体或液体的流体进入锥形中空部分。当引入流体时，密封构件被挤压并与锥形中空部分和半导体衬底的整个周边部分气密接触，使得电解溶液通过半导体衬底之间的配合被分离成电隔离部分，密封构件和支撑夹具。然后可以进行半导体衬底的阳极氧化，例如通过在半导体衬底的表面上产生多孔硅层。

73. 发明授权

US09453277B2 Method of heat treatment and the directions for use of furnace of heat treatment 有权
标题翻译：热处理方法和热处理炉的使用方向
公开(公告)号：US09453277B2
公开(公告)日：2016-09-27
申请号：US14133935
申请日：2013-12-19
申请人： Takanori Watanabe , Asahiro Sakata , Hideaki Iwamura
发明人： Takanori Watanabe , Asahiro Sakata , Hideaki Iwamura
IPC分类号： C23C8/26 , C22C19/03 , C23C8/24 , C21D1/06 , C21D1/76 , C22C19/05 , C23C8/02 , C23C8/34 , C23C8/80 , F27B5/04 , F27D7/02 , F27D7/06
CPC分类号： C23C8/24 , C21D1/06 , C21D1/76 , C22C19/055 , C22C19/056 , C23C8/02 , C23C8/34 , C23C8/80 , F27B5/04 , F27D7/02 , F27D7/06
摘要： A furnace of heat treatment capable of keeping a stable nitriding quality for a long period of time is provided. The furnace of heat treatment performs a halogenation treatment and a nitriding treatment by heating a steel material under a predetermined atmosphere. An alloy containing Ni ranging between 50 mass % or more and 80 mass % or less and Fe ranging between 0 mass % or more and 20 mass % or less is used as a material of surfaces of core internals exposed to a treatment space where the nitriding treatment is performed. Accordingly, a nitriding reaction is hardly caused on the surfaces of the core internals, and the halogenation treatment and the nitriding treatment to an article to be treated can be stably executed for a long period of time. Further, a nitrided layer can be stably formed according to purposes on any types of steel materials including a steel type hard to be nitride.
摘要翻译：提供能够长时间保持稳定的氮化质量的热处理炉。热处理炉通过在预定的气氛下加热钢材进行卤化处理和氮化处理。使用包含Ni在50质量％以上至80质量％以下的Fe和0质量％以上至20质量％以下的Fe的合金作为暴露于氮化处理空间的芯部内部材料的表面的材料进行治疗。因此，核心内部的表面几乎不发生氮化反应，能够长时间稳定地进行对被处理物的卤化处理和氮化处理。此外，氮化层可以根据目的对包括难以氮化的钢的任何类型的钢材进行稳定地形成。

74. 发明授权

US08798514B2 Image fixing appratus for fixing a toner image on a recording material by heating the toner image while feeding the recording material through a nip 有权
标题翻译：图像定影装置，用于通过在通过压区馈送记录材料的同时加热调色剂图像来将调色剂图像定影在记录材料上
公开(公告)号：US08798514B2
公开(公告)日：2014-08-05
申请号：US13484960
申请日：2012-05-31
申请人： Masashi Tanaka , Kohei Okayasu , Takanori Watanabe , Keisuke Fujita
发明人： Masashi Tanaka , Kohei Okayasu , Takanori Watanabe , Keisuke Fujita
IPC分类号： G03G15/20
CPC分类号： G03G15/2053
摘要： Image fixing apparatus for fixing a toner image through a nip, the apparatus including a cylindrical film; a nip forming member contacting an inner surface of the film; a pressing rotatable member forming the nip in cooperation with the nip forming member with the film interposed therebetween; and a regulating member for regulating movement of the film in a direction of a generatrix of the film, wherein the regulating member has an opposing surface opposing an edge of an end portion of the film with respect to the direction of the generatrix, and the opposing surface has a regulation region for regulating the edge of the film when the film is driven and moves in the generatrix direction, wherein the regulation region is narrower in a downstream side of a center portion of the nip than in an upstream side thereof with respect to a sheet feeding direction.
摘要翻译：图像定影装置，用于通过辊隙固定调色剂图像，该装置包括圆柱形膜; 与所述膜的内表面接触的辊隙形成部件; 与辊隙形成构件协同地形成夹持部的压制可旋转构件，其间插入有膜; 以及调节构件，用于调节所述膜在所述膜的母线方向上的移动，其中所述调节构件具有相对于所述母线的方向与所述膜的端部的边缘相对的相对表面，并且所述相对的表面具有用于调节膜的边缘的调节区域，当膜被驱动并且沿母线方向移动时，调节区域在辊隙的中心部分的下游侧比在其上游侧相对于送纸方向。

75. 发明申请

US20140102593A1 METHOD OF HEAT TREATMENT AND THE DIRECTIONS FOR USE OF FURNACE OF HEAT TREATMENT 有权
标题翻译：热处理方法和使用热处理炉的方向
公开(公告)号：US20140102593A1
公开(公告)日：2014-04-17
申请号：US14133935
申请日：2013-12-19
申请人： Takanori Watanabe , Asahiro Sakata , Hideaki Iwamura
发明人： Takanori Watanabe , Asahiro Sakata , Hideaki Iwamura
IPC分类号： C23C8/24 , C23C8/80
CPC分类号： C23C8/24 , C21D1/06 , C21D1/76 , C22C19/055 , C22C19/056 , C23C8/02 , C23C8/34 , C23C8/80 , F27B5/04 , F27D7/02 , F27D7/06
摘要： A furnace of heat treatment capable of keeping a stable nitriding quality for a long period of time is provided. The furnace of heat treatment performs a halogenation treatment and a nitriding treatment by heating a steel material under a predetermined atmosphere. An alloy containing Ni ranging between 50 mass % or more and 80 mass % or less and Fe ranging between 0 mass % or more and 20 mass % or less is used as a material of surfaces of core internals exposed to a treatment space where the nitriding treatment is performed. Accordingly, a nitriding reaction is hardly caused on the surfaces of the core internals, and the halogenation treatment and the nitriding treatment to an article to be treated can be stably executed for a long period of time. Further, a nitrided layer can be stably formed according to purposes on any types of steel materials including a steel type hard to be nitride.
摘要翻译：提供能够长时间保持稳定的氮化质量的热处理炉。热处理炉通过在预定的气氛下加热钢材进行卤化处理和氮化处理。使用包含Ni在50质量％以上至80质量％以下的Fe和0质量％以上至20质量％以下的Fe的合金作为暴露于氮化处理空间的芯部内部的表面的材料进行治疗。因此，核心内部的表面几乎不发生氮化反应，能够长时间稳定地进行对被处理物的卤化处理和氮化处理。此外，氮化层可以根据目的对包括难以氮化的钢的任何类型的钢材进行稳定地形成。

76. 发明申请

US20140102592A1 STEEL PRODUCT AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：钢产品及其制造方法
公开(公告)号：US20140102592A1
公开(公告)日：2014-04-17
申请号：US14123540
申请日：2012-04-19
申请人： Koji Nishikawa , Hisao Fujikawa , Takanori Watanabe , Hideaki Iwamura , Morihiro Fujita
发明人： Koji Nishikawa , Hisao Fujikawa , Takanori Watanabe , Hideaki Iwamura , Morihiro Fujita
IPC分类号： C23C8/26
CPC分类号： C23C8/26 , C21D9/40 , C23C8/02 , C23C8/80
摘要： To provide a steel product excelling in both corrosion resistance and adhesion. A steel product having a nitride layer and a nitrogen diffused layer formed on the surface of a steel base material is provided. The nitride layer includes a first compound layer formed on a nitrogen diffused layer side and a second compound layer formed on a surface side of the first compound layer. The first compound layer has an ε-structure mainly made of Fe3N, and the second compound layer has a higher nitrogen concentration than the first compound layer and has a concavoconvex formed on the surface thereof. Thus, the nitride layer having excellent adhesion, an extremely small carbon containing amount, and high corrosion resistance can be formed.
摘要翻译：提供优异的耐腐蚀性和附着性的钢制品。提供了在钢基材的表面上形成有氮化物层和氮扩散层的钢制品。氮化物层包括在氮扩散层侧形成的第一化合物层和形成在第一化合物层的表面侧上的第二化合物层。第一化合物层具有主要由Fe 3 N制成的结构，第二化合物层的氮浓度高于第一化合物层，并且在其表面上形成凹凸。因此，可以形成具有优异的粘附性，极小碳含量和高耐腐蚀性的氮化物层。

77. 发明授权

US08570418B2 Photoelectric conversion apparatus and manufacturing method for a photoelectric conversion apparatus 有权
标题翻译：光电转换装置及光电转换装置的制造方法
公开(公告)号：US08570418B2
公开(公告)日：2013-10-29
申请号：US13132968
申请日：2010-01-26
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H01L21/00
CPC分类号： H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A photoelectric conversion apparatus (100) comprises: multiple photoelectric converting units (PD) disposed in a semiconductor substrate; (SB) and isolation portions (103,104,105,106) disposed in the semiconductor substrate. Each photoelectric converting unit includes: a second semiconductor region (107); a third semiconductor region, (109) disposed below the second semiconductor region(107) and a fourth semiconductor region (102) disposed below the third semiconductor region, and each isolation portion includes: a fifth semiconductor region, (104) disposed at a location that is deeper than the surface of the semiconductor substrate and at least extending laterally to the second semiconductor region, containing a first conductivity type impurity; and a sixth semiconductor region,(105) disposed below the fifth semiconductor region and at least extending laterally to the third semiconductor region, containing the first conductivity type impurity, and the diffusion coefficient of the impurity contained in the fifth semiconductor region is lower than the diffusion coefficient of the impurity contained in the sixth semiconductor region.
摘要翻译：光电转换装置（100）包括：设置在半导体衬底中的多个光电转换单元（PD）; （SB）和设置在半导体衬底中的隔离部分（103,104,105,106）。每个光电转换单元包括：第二半导体区域（107）; 设置在所述第二半导体区域（107）下方的第三半导体区域（109）和设置在所述第三半导体区域下方的第四半导体区域（102），并且每个隔离部分包括：第五半导体区域（104），设置在位置其比半导体衬底的表面更深，并且至少横向延伸到包含第一导电类型杂质的第二半导体区域; 以及第六半导体区域（105），其设置在所述第五半导体区域的下方，并且至少横向延伸到所述第三半导体区域，所述第三半导体区域包含所述第一导电型杂质，并且所述第五半导体区域中包含的杂质的扩散系数低于包含在第六半导体区域中的杂质的扩散系数。

78. 发明授权

US08395862B2 Disk drive device with motor coil wiring arrangement to reduce thickness and suppressed torque decrease 失效
标题翻译：具有电机线圈布线布置的磁盘驱动装置，以减小厚度并抑制扭矩减小
公开(公告)号：US08395862B2
公开(公告)日：2013-03-12
申请号：US13530433
申请日：2012-06-22
申请人： Takanori Watanabe , Hiroshi Iwai , Tomoyuki Tashiro
发明人： Takanori Watanabe , Hiroshi Iwai , Tomoyuki Tashiro
IPC分类号： G11B17/02
CPC分类号： G11B19/2009 , G11B19/2045 , H02K3/28
摘要： The disk drive device includes a base member, a hub, a bearing unit which is arranged on the base member and which rotatably supports the hub, and a spindle drive unit which drives the hub to rotate. The spindle drive unit includes a stator core having a salient pole, a coil wound around the salient pole and a magnet opposed to the salient pole. The hub formed of magnetic material includes an outer cylinder portion engaged with an inner circumference of a recording disk and an inner cylinder portion to which an outer circumference of the magnet is fixed. The base member having a wire hole through which a wire from the coil passes, and a concavity that is formed at a bottom surface of the base member wherein the wire passes through the wire hole along a bottom face of the base member to a wiring member at the concavity.
摘要翻译：盘驱动装置包括基座构件，轮毂，布置在基座构件上并且可旋转地支撑轮毂的轴承单元和驱动轮毂旋转的主轴驱动单元。主轴驱动单元包括具有凸极的定子芯，缠绕在凸极上的线圈和与凸极相对的磁体。由磁性材料构成的毂包括与记录盘的内周接合的外筒部和固定有磁体的外周的内筒部。所述基部构件具有线圈，线圈通过该线孔，并且形成在所述基座构件的底面的凹部，其中所述线材沿着所述基座构件的底面穿过所述线孔，至所述布线构件在凹处。

79. 发明授权

US08293561B2 Image pickup device and image pickup system 有权
标题翻译：摄像设备和摄像系统
公开(公告)号：US08293561B2
公开(公告)日：2012-10-23
申请号：US13442235
申请日：2012-04-09
申请人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
发明人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3595 , H04N5/374
摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
摘要翻译：提供了一种图像拾取装置，包括将光转换成电荷的光电转换元件，用于将转换的电荷转移到浮动节点的传输门，源极跟随器晶体管，用于基于浮动节点的电压将信号输出到信号线和钳位电路，在第一电压和第二电压下限幅信号线。

80. 发明授权

US08222682B2 Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus 有权
标题翻译：光电转换装置和使用光电转换装置的摄像系统
公开(公告)号：US08222682B2
公开(公告)日：2012-07-17
申请号：US13079381
申请日：2011-04-04
申请人： Takanori Watanabe , Masaaki Iwane , Yukihiro Kuroda , Masahiro Kobayashi , Yasushi Nakata
发明人： Takanori Watanabe , Masaaki Iwane , Yukihiro Kuroda , Masahiro Kobayashi , Yasushi Nakata
IPC分类号： H01L31/062
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14641
摘要： A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.
摘要翻译：一种光电转换装置，包括将入射光转换成电载体的多个光电转换元件，由多个光电转换元件共用的放大器MOS晶体管，与放大器MOS晶体管的栅电极连接的多个浮置扩散，以及对应于各个光电转换元件布置的多个传输MOS晶体管，每个传输MOS晶体管将电载体从相应的一个光电转换元件传输到相应的一个浮置扩散。在这种光电转换装置中，至少两个浮置扩散部通过与放大器MOS晶体管的栅电极相同的布线层所包含的布线彼此电连接。

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