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71. 发明申请

US20110309368A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110309368A1
公开(公告)日：2011-12-22
申请号：US13223582
申请日：2011-09-01
申请人： Shunpei YAMAZAKI , Masahiko HAYAKAWA , Yoshifumi TANADA , Mitsuaki OSAME , Aya ANZAI , Ryota FUKUMOTO
发明人： Shunpei YAMAZAKI , Masahiko HAYAKAWA , Yoshifumi TANADA , Mitsuaki OSAME , Aya ANZAI , Ryota FUKUMOTO
IPC分类号： H01L33/08
CPC分类号： H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
摘要翻译：半导体元件由于静电放电损坏而劣化或被破坏。本发明提供一种其中在每个像素中形成保护装置的半导体器件。保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或晶体管的漏极。因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

72. 发明申请

US20110284839A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110284839A1
公开(公告)日：2011-11-24
申请号：US13107283
申请日：2011-05-13
申请人： Shunpei YAMAZAKI , Toshinari SASAKI , Kosei NODA
发明人： Shunpei YAMAZAKI , Toshinari SASAKI , Kosei NODA
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/385 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.
摘要翻译：本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下到热解吸光谱。包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化并制成电i型（本征）半导体。

73. 发明申请

US20110272701A1 THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，具有薄膜晶体管的显示装置及其制造方法
公开(公告)号：US20110272701A1
公开(公告)日：2011-11-10
申请号：US13187584
申请日：2011-07-21
申请人： Shunpei YAMAZAKI , Yoshiyuki KUROKAWA , Yasuhiro JINBO , Satoshi KOBAYASHI , Daisuke KAWAE
发明人： Shunpei YAMAZAKI , Yoshiyuki KUROKAWA , Yasuhiro JINBO , Satoshi KOBAYASHI , Daisuke KAWAE
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.
摘要翻译：提出了具有优异电特性的薄膜晶体管，具有薄膜晶体管的显示装置，以及制造薄膜晶体管和显示装置的方法。薄膜晶体管包括形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜，形成在微晶半导体膜上的缓冲层，一对半导体膜，赋予一种导电型的杂质元素并且形成在缓冲层之上，并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。栅极绝缘膜或整个栅极绝缘膜的一部分和/或微晶半导体的一部分或整个微晶半导体包括用作供体的杂质元素。

74. 发明申请

US20110263059A1 LIGHT-EMITTING DEVICE, LIQUID-CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光装置，液晶显示装置及其制造方法
公开(公告)号：US20110263059A1
公开(公告)日：2011-10-27
申请号：US13097445
申请日：2011-04-29
申请人： Toru TAKAYAMA , Shunpei YAMAZAKI
发明人： Toru TAKAYAMA , Shunpei YAMAZAKI
IPC分类号： H01L33/40
CPC分类号： G02F1/136286 , G02F1/13454 , G02F2001/136295 , H01L27/124 , H01L27/3279 , H01L27/3293 , H01L2251/5315
摘要： The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of. Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an alloy thereof) in the insulating layer. Furthermore, after planarizing the surface of the insulating layer, a metal protection film (Ti, TiN, Ta, TaN or the like) is formed in an exposed part. By using the buried interconnection in part of various lines (gate line, source line, power supply line, common line and the like) for a light-emitting device or liquid-crystal display device, line resistance is decreased.
摘要翻译：本发明提供即使在屏幕尺寸增加的情况下实现低功耗的半导体器件的结构及其制造方法。本发明形成绝缘层，在绝缘层中形成埋置互连（Cu，Au，Ag，Ni，Cr，Pd，Rh，Sn，Pb或其合金）。此外，在平坦化绝缘层的表面之后，在暴露部分中形成金属保护膜（Ti，TiN，Ta，TaN等）。通过在发光装置或液晶显示装置的各种线路（栅极线，源极线，电源线，公共线等）的一部分中使用埋入布线，线电阻降低。

75. 发明申请

US20110249038A1 LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：液晶显示器件和电子器件
公开(公告)号：US20110249038A1
公开(公告)日：2011-10-13
申请号：US13079035
申请日：2011-04-04
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： G09G3/36 , G09G5/10
CPC分类号： G09G3/3413 , G09G3/3611 , G09G2310/0235 , G09G2320/0242 , G09G2320/0247 , G09G2320/103 , G09G2330/021
摘要： A liquid crystal display device by which a color moving image displayed with a field sequential system and a monochrome still image are switched and displayed. In a moving-image mode, a driving control circuit controls the backlight portion to emit light corresponding to any one of a plurality of colors of the first light source, and controls the display panel by writing of the image signal in the display panel for each of the plurality of colors within a predetermined period. In a still-image mode, the driving control circuit controls the backlight portion to keep the second light source emitting light, and controls the display panel to hold the image signal written thereto, for a predetermined period.
摘要翻译：切换显示用场顺序系统和单色静止图像显示的彩色运动图像的液晶显示装置。在运动图像模式中，驱动控制电路控制背光部分发出与第一光源的多种颜色中的任意一种相对应的光，并且通过在每个显示面板中写入图像信号来控制显示面板的多个颜色。在静止图像模式中，驱动控制电路控制背光部分以保持第二光源发光，并且控制显示面板将写入的图像信号保持在预定时间段。

76. 发明申请

US20110235162A1 DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110235162A1
公开(公告)日：2011-09-29
申请号：US13153546
申请日：2011-06-06
申请人： Shunpei YAMAZAKI , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Yasuyuki ARAI
IPC分类号： G02F1/167
CPC分类号： G02F1/167 , G02B26/026 , G02F1/133305 , G02F1/1368 , G02F2001/1672 , G02F2001/1676 , G02F2001/1678 , G02F2201/123 , G09F9/372 , G09G3/344 , H01L51/0097 , H01L51/0545
摘要： A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.
摘要翻译：以下示出本发明的显示装置的结构。显示装置包括像素单元，其包括TFT，其中有源层包含有机半导体材料，用于在布置成与栅电极相遇的绝缘层中的开口部分中形成沟道部分。像素单元还包括形成在连接到TFT上的电极上用于改变施加电场时的反射率的造影剂，或者包含在施加电场时改变反射率的带电粒子的微胶囊。像素单元被塑料基板夹持，并且在塑料基板和像素单元之间设置包括无机绝缘材料的阻挡层。本发明的目的是提供生产率优良，重量轻且柔软的显示装置。

77. 发明申请

US20110212575A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE 有权
标题翻译：制造薄膜集成电路和元件基板的方法
公开(公告)号：US20110212575A1
公开(公告)日：2011-09-01
申请号：US13101400
申请日：2011-05-05
申请人： Shunpei YAMAZAKI , Koji DAIRIKI
发明人： Shunpei YAMAZAKI , Koji DAIRIKI
IPC分类号： H01L21/8232
CPC分类号： H01L27/1266 , G06K19/07749 , G06K19/07758 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/1214 , H01L27/13 , H01L29/66757 , H01L29/78675
摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. In view of the above described object, one feature of the invention is to provide the steps of forming a separation layer over an insulating substrate and forming a thin film integrated circuit having a semiconductor film as an active region over the separation layer, wherein the thin film integrated circuit is not separated. There is less limitation on the shape of a mother substrate in the case of using the insulating substrate, when compared with the case of taking a chip out of a circular silicon wafer. Accordingly, reduction in cost of an IC chip can be achieved.
摘要翻译：预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。鉴于上述目的，本发明的一个特征是提供在绝缘基板上形成分离层并形成薄膜集成电路的步骤，该薄膜集成电路具有半导体薄膜作为分离层上的活性区域，其中薄的胶片集成电路不分离。与使用圆形硅晶片的情况相比，在使用绝缘基板的情况下，母基板的形状受到限制。因此，可以实现IC芯片的成本降低。

78. 发明申请

US20110212569A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110212569A1
公开(公告)日：2011-09-01
申请号：US13029148
申请日：2011-02-17
申请人： Shunpei YAMAZAKI , Junichi KOEZUKA
发明人： Shunpei YAMAZAKI , Junichi KOEZUKA
IPC分类号： H01L21/16
CPC分类号： H01L21/385 , G02F1/134309 , G02F1/13439 , G02F1/1368 , G02F2201/123 , H01L27/1225 , H01L27/124 , H01L29/4908 , H01L29/4958 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.
摘要翻译：在包括氧化物半导体层的晶体管中，形成与氧化物半导体层接触的氧化物绝缘层。然后，通过氧化物绝缘层将氧引入（添加）到氧化物半导体层，并进行热处理。通过氧气引入和热处理的这些步骤，有意地从氧化物半导体层除去诸如氢，水分，羟基或氢化物的杂质，使得氧化物半导体层被高度纯化。

79. 发明申请

US20110210949A1 DISPLAY DEVICE AND E-BOOK READER PROVIDED THEREWITH 有权
标题翻译：显示设备和电子书阅读器
公开(公告)号：US20110210949A1
公开(公告)日：2011-09-01
申请号：US13029147
申请日：2011-02-17
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： G09G5/00
CPC分类号： G09G3/3648 , G09G2340/0435
摘要： An object is to provide a display device in which deterioration in display quality due to a change in voltage applied is reduced and a lower visible efficiency in changing display is prevented. The display device has a display controller configured to make the display portion perform display by switching a first still image display period including a writing period in which a first image signal is written and a holding period in which the first image signal is held, and a second still image display period including a writing period in which a second image signal is written and a holding period in which the second image signal is held. The display controller is configured to make a length of the writing period of the first still image display period and a length of the writing period of the second still image display period different from each other.
摘要翻译：本发明的目的是提供一种显示装置，其中由于施加的电压变化引起的显示质量的劣化被降低，并且防止了改变显示的较低的可见效率。显示装置具有显示控制器，其被配置为通过切换包括写入第一图像信号的写入周期和保持第一图像信号的保持周期的第一静止图像显示周期来使显示部分进行显示，第二静止图像显示周期包括写入第二图像信号的写入周期和保持第二图像信号的保持周期。显示控制器被配置为使第一静止图像显示周期的写入周期的长度和第二静止图像显示周期的写入周期的长度彼此不同。

80. 发明申请

US20110198595A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20110198595A1
公开(公告)日：2011-08-18
申请号：US13093897
申请日：2011-04-26
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , G02F1/1368 , H01L27/12 , H01L29/458 , H01L29/786 , H01L29/78696
摘要： It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种包括具有高电特性和高可靠性的薄膜晶体管的液晶显示装置。对于包括沟道阻挡型倒置交错薄膜晶体管的液晶显示装置，反交错薄膜晶体管包括栅电极，栅电极上的栅极绝缘膜，微晶半导体膜，包括沟道形成区域栅极绝缘膜，微晶半导体膜上的缓冲层，以及形成在缓冲层上以与微晶半导体膜的沟道形成区重叠的沟道保护层。

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