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71. 发明授权

US6081541A Semiconductor laser device and optical disk apparatus using the same 失效
公开(公告)号：US6081541A
公开(公告)日：2000-06-27
申请号：US349747
申请日：1999-07-08
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.

72. 发明授权

US6072817A Semiconductor laser device and optical disk apparatus using the same 失效
标题翻译：半导体激光装置及其使用的光盘装置
公开(公告)号：US6072817A
公开(公告)日：2000-06-06
申请号：US732279
申请日：1996-10-30
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
摘要翻译： PCT No.PCT / JP96 / 00801 Sec。 371日期1996年10月30日 102（e）日期1996年10月30日PCT 1996年3月27日PCT公布。公开号WO96 / 30977 日期1996年10月3日本发明的半导体激光装置包括由n型GaAs制成的基板201，有源层204和夹持有源层204的一对包层。该器件还包括相邻的间隔层205 到有源层204和高掺杂的可饱和吸收层206.通过以高浓度掺杂可饱和吸收层206来缩短载流子寿命，由此可以获得稳定的自持脉动。结果，可以获得在宽的温度范围内具有低的相对噪声强度的半导体激光器件。

73. 发明授权

US5974068A Semiconductor laser and a method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5974068A
公开(公告)日：1999-10-26
申请号：US822409
申请日：1997-03-21
申请人： Hideto Adachi , Isao Kidoguchi , Kiyoshi Ohnaka , Satoshi Kamiyama
发明人： Hideto Adachi , Isao Kidoguchi , Kiyoshi Ohnaka , Satoshi Kamiyama
IPC分类号： H01S5/065 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/10 , H01S5/2231 , H01S5/0655 , H01S5/0658 , H01S5/106 , H01S5/1064 , H01S5/209 , H01S5/2206 , H01S5/2219 , H01S5/222 , H01S5/32325
摘要： A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.
摘要翻译：根据本发明的半导体激光器包括：半导体衬底; 设置在所述半导体衬底上的多层结构，所述多层结构包括有源层，插入所述有源层的一对包覆层以及用于将电流注入到所述有源层的条形预定区域中的电流限制部分，其中，所述电流限制部分包括形成在除了与有源层的预定区域相对应的区域之外的区域中的第一电流限制层，第一电流限制层具有大于有源层的能带隙的能带隙并具有更小的折射率比活性层的折射率高。

74. 发明授权

US5787104A Semiconductor light emitting element and method for fabricating the same 失效
公开(公告)号：US5787104A
公开(公告)日：1998-07-28
申请号：US588863
申请日：1996-01-19
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/16 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2201 , H01S5/34333 , H01L33/16 , H01L33/32 , H01S2301/173 , H01S2304/04 , H01S2304/12 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

75. 发明授权

US5784188A Electro-absorption optical modulator and method for fabricating the same 失效
标题翻译：电吸收光调制器及其制造方法
公开(公告)号：US5784188A
公开(公告)日：1998-07-21
申请号：US796934
申请日：1997-02-07
申请人： Shinji Nakamura , Satoshi Kamiyama , Kenichi Matsuda , Yasushi Matsui
发明人： Shinji Nakamura , Satoshi Kamiyama , Kenichi Matsuda , Yasushi Matsui
IPC分类号： G02F1/015 , G02F1/017 , G02F1/03
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/19
摘要： An electro-absorption optical modulator, where a waveguide length of the absorption layer is denoted by L, a light confinement coefficient thereof is denoted by .GAMMA., and a performance factor of the absorption layer at an applied voltage V to an absorption layer is denoted by K(V), has design parameters selected so that a relationship .vertline.K(V)-.GAMMA..multidot.L.vertline. .ltoreq.0.005 cm is satisfied in a continuous operation range of a quenching ration T.sub.Att. The waveguide length L is preferably optimizrd so as to satisfy K(V).apprxeq..GAMMA..multidot.L in the operation range.
摘要翻译：将吸收层的波导长度用L表示的电吸收光调制器用GAMMA表示其光限制系数，吸收层的施加电压V下的吸收层的性能因子表示为 K（V）具有选择的设计参数，使得关系| K（V）-GAMMA xL | 在骤冷比TAtt的连续运行范围内满足0.005cm。波导长度L优选地优选地在操作范围内满足K（V）APPROX GAMMA xL。

76. 发明授权

US5622888A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5622888A
公开(公告)日：1997-04-22
申请号：US550355
申请日：1995-10-30
申请人： Makoto Sekine , Satoshi Kamiyama
发明人： Makoto Sekine , Satoshi Kamiyama
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10852 , H01L28/84
摘要： A semiconductor device has a capacitive element with excellent leak current characteristics which has a tungsten film with a roughened surface for increasing the surface of a lower electrode. A capacitive element for use in a VLSI memory circuit such as a DRAM or the like is fabricated by forming a thin, roughened tungsten film selectively on a surface of a lower electrode of polysilicon by chemical vapor-phase growth and forming a capacitive insulating film on the surface of the lower electrode of polysilicon, densifying the capacitive insulating film, and forming an upper electrode of a metal element.
摘要翻译：半导体器件具有优异的漏电流特性的电容元件，其具有用于增加下电极表面的粗糙表面的钨膜。通过化学气相生长在多晶硅的下电极的表面上选择性地形成薄的粗糙的钨膜，并形成电容绝缘膜，制造用于诸如DRAM等的VLSI存储器电路中的电容元件多晶硅的下电极的表面，使电容绝缘膜致密化，并形成金属元件的上电极。

77. 发明授权

US5383214A Semiconductor laser and a method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5383214A
公开(公告)日：1995-01-17
申请号：US92358
申请日：1993-07-15
申请人： Isao Kidoguchi , Satoshi Kamiyama , Kiyoshi Ohnaka
发明人： Isao Kidoguchi , Satoshi Kamiyama , Kiyoshi Ohnaka
IPC分类号： H01S5/10 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/1039 , H01S5/204 , H01S5/205 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.
摘要翻译：一种半导体激光器，包括半导体衬底和形成在半导体衬底上的多层结构，所述多层结构包括有源层，一对覆盖层，有源层插入在其间，以及用于将电流注入到条带中的电流限制层形状的有源层的预定区域。电流限制层包括在除了与有源层的预定区域相对应的区域之外的区域中形成的第一电流阻挡层。第一电流阻挡层的折射率高于一对包覆层的折射率，并且能带隙大于有源层的能带隙。

78. 发明授权

US5268328A Method of fabricating a semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US5268328A
公开(公告)日：1993-12-07
申请号：US991223
申请日：1992-12-16
申请人： Yoshihiro Mori , Masaya Mannoh , Satoshi Kamiyama , Kiyoshi Ohnaka
发明人： Yoshihiro Mori , Masaya Mannoh , Satoshi Kamiyama , Kiyoshi Ohnaka
IPC分类号： H01S5/22 , H01S5/223 , H01S5/323 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/221 , H01S5/32325
摘要： A method of fabricating a semiconductor laser includes successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic. A mask is formed for selectively etching the current blocking layer in the form of a stripe. A buffer-etching step is formed on both the current blocking layer and the mask to expose a surface of the current blocking layer and the thin-film layer, the surface including a Group V element arsenic. An outer cladding layer comprising a first-conductivity type compound semiconductor having a Group V element arsenic is formed on the current blocking layer and the thin-film layer in an atmosphere having a Group V element arsenic. The method has characteristic features including carrying out the crystal growth only twice, minimizing the movement of impurities in crystals, regrowing the interface with a very little defect and forming a structure wherein the outer cladding layer has a smaller width at its portion near to the active waveguide.
摘要翻译：制造半导体激光器的方法包括：通过晶体生长在半导体衬底上依次形成由包括V族元素磷的化合物半导体构成的有源波导，由包含第V族元素的第一导电型化合物半导体构成的薄膜层元素砷和由包含第V族元素砷的第二导电型化合物半导体构成的电流阻挡层。形成掩模以选择性地蚀刻呈条状形式的电流阻挡层。在电流阻挡层和掩模上形成缓冲蚀刻步骤，以暴露电流阻挡层和薄膜层的表面，该表面包括第V族元素砷。在具有V族元素砷的气氛中，在电流阻挡层和薄膜层上形成包含具有V族元素砷的第一导电型化合物半导体的外包层。该方法具有特征，包括仅进行晶体生长两次，使晶体中的杂质的移动最小化，再次产生具有很小缺陷的界面，并且形成其中外包层在其活性附近部分具有较小宽度的结构波导。

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