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71. 发明授权

US5117112A Method and apparatus for monitoring astigmatism and focus in electron microscope 失效
标题翻译：用于电子显微镜监测散光和聚焦的方法和装置
公开(公告)号：US5117112A
公开(公告)日：1992-05-26
申请号：US616323
申请日：1990-11-21
申请人： Takashi Ito
发明人： Takashi Ito
IPC分类号： H01J37/153 , H01J37/21 , H01J37/22 , H01J37/26
CPC分类号： H01J37/153 , H01J37/21 , H01J37/22 , H01J2237/1532
摘要： There are disclosed a method and an apparatus for monitoring astigmatism and the condition of the focus in a transmission electron microscope. The apparatus includes a TV camera for converting the specimen image taken by the electron microscope into a video signal, which is sent to a control unit. An image monitor, a graph monitor and image memory are connected with the control unit, as well as the TV camera. The control unit superimposes radial cursor lines on the image of a specimen displayed on the image monitor, and reads data about the pixels lying on the cursor lines from the image memory. The control unit then creates graphs showing the distributions of data about the pixels existing on the cursor lines from the data read from the memory. An array of the graphs is displayed on the graph monitor.
摘要翻译：公开了一种用于在透射电子显微镜中监测散光和焦点状态的方法和装置。该装置包括用于将由电子显微镜拍摄的样本图像转换成视频信号的电视摄像机，该视频信号被发送到控制单元。图像监视器，图形显示器和图像存储器与控制单元以及电视摄像机连接。控制单元将径向光标线叠加在显示在图像监视器上的样本的图像上，并且从图像存储器读取关于位于光标线上的像素的数据。控制单元然后创建从存储器读取的数据显示关于存在于光标线上的像素的数据分布的图。图形阵列显示在图形监视器上。

72. 发明授权

US5084618A Autofocus method and apparatus for electron microscope 失效
标题翻译：电子显微镜的自动对焦方法和装置
公开(公告)号：US5084618A
公开(公告)日：1992-01-28
申请号：US609871
申请日：1990-11-06
申请人： Takashi Ito
发明人： Takashi Ito
IPC分类号： H01J37/22 , H01J37/21 , H01J37/26
CPC分类号： H01J37/21
摘要： Autofocus method and apparatus capable of quickly detecting the focal point in an electron microscope in spite of the magnetic aftereffects of the ferromagnetic substance forming the objective lens. The autofocus method is initiated by causing the electron beam emitted from the microscope to hit a specimen at a first angle. Under this condition, the excitation current fed to the objective lens is continuously varied between values. At the same time, a video signal obtained from the resulting projected image is sampled at fixed intervals to obtain a first set of data. Then, the beam is caused to hit the specimen at a second angle. Under this condition, the excitation current fed to the objective lens is continuously varied between values. Simultaneously, a video signal produced from the resulting projected image is sampled at fixed intervals to obtain a second set of data. These two sets of data are compared to find the focal point.
摘要翻译：尽管存在形成物镜的铁磁性物质的磁性后果，能够快速检测电子显微镜中焦点的自动对焦方法和装置。通过使从显微镜发射的电子束以第一角度撞击样品来启动自动聚焦方法。在这种情况下，馈送到物镜的激励电流在值之间连续变化。同时，从得到的投影图像获得的视频信号以固定间隔进行采样以获得第一组数据。然后使光束以第二个角度撞击样品。在这种情况下，馈送到物镜的激励电流在值之间连续变化。同时，从产生的投影图像产生的视频信号以固定间隔进行采样以获得第二组数据。将这两组数据进行比较，找出焦点。

73. 发明授权

US5016362A Coffee bean roasting device 失效
标题翻译：咖啡豆焙烧装置
公开(公告)号：US5016362A
公开(公告)日：1991-05-21
申请号：US537148
申请日：1990-06-12
申请人： Akihiko Nakamura , Takashi Ito
发明人： Akihiko Nakamura , Takashi Ito
IPC分类号： A23N12/10
CPC分类号： A23N12/10
摘要： A coffee bean roasting device includes a heating oven and a roasting drum in the heating drum, infrared heaters attached to inner walls of the heating oven, and a cooling drum provided under the roasting drum. The device further includes agitating blades spirally provided on inner walls of the roasting drum and the cooling drum and having smooth inner circumferential edges, a suction blower for sucking air in either of the drums, an exhaust passage for exhausting burnt gases produced in the roasting drum out of the device, a pressure sensor provided in a passage from an opening of the roasting drum to the exhaust passage, a pressure regulating device for regulating pressures in the roasting drum with the aid of differences between pressures detected by the pressure sensor and atmospheric pressure, a temperature sensor provided on an inner wall of the heating oven in opposition to the roasting drum, and a water spray nozzle for spraying water into the roasting drum through its opening.
摘要翻译：咖啡豆焙烧装置包括加热炉中的加热炉和焙烧桶，附着在加热炉内壁的红外线加热器和设置在焙烧鼓下方的冷却鼓。该装置还包括螺旋地设置在焙烧滚筒和冷却滚筒的内壁上并且具有平滑的内圆周边缘的搅拌叶片，用于在任一个滚筒中吸入空气的抽吸鼓风机，用于排出在焙烧滚筒中产生的燃烧气体的排气通道设置在从焙烧鼓的开口到排气通道的通道中的压力传感器，用于通过压力传感器检测到的压力和大气压之间的差异来调节焙烧鼓中的压力的压力调节装置设置在与焙烧鼓相对的加热炉的内壁上的温度传感器，以及通过其开口将水喷入焙烧鼓中的喷水嘴。

74. 发明授权

US4935804A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4935804A
公开(公告)日：1990-06-19
申请号：US168589
申请日：1988-03-03
申请人： Takashi Ito , Hiroshi Horie , Toshihiro Sugii
发明人： Takashi Ito , Hiroshi Horie , Toshihiro Sugii
IPC分类号： H01L29/78 , H01L21/28 , H01L21/3205 , H01L21/441 , H01L23/52 , H01L29/43 , H01L29/45 , H01L29/49
CPC分类号： H01L21/28061 , H01L29/458 , H01L29/4941
摘要： A semiconductor device with an electrode wiring layer including an upper conductive layer and, interspaced with a barrier layer used for reaction prevention, a lower conductive layer contacting an active region. The barrier layer consists of an insulating film having a thickness thin enough for flow of a tunnel current.
摘要翻译：一种具有电极布线层的半导体器件，该电极布线层包括上导电层，并且与用于防止反应的阻挡层相互间隔开接触有源区的下导电层。阻挡层由具有足够薄的隧道电流流动的厚度的绝缘膜组成。

75. 发明授权

US4794054A Platinum alloy electrocatalyst and acid-electrolyte fuel cell electrode using the same 失效
标题翻译：铂合金电催化剂和酸性电解质燃料电池电极使用相同
公开(公告)号：US4794054A
公开(公告)日：1988-12-27
申请号：US67423
申请日：1987-06-24
申请人： Takashi Ito , Shigemitsu Matsuzawa , Katsuaki Kato
发明人： Takashi Ito , Shigemitsu Matsuzawa , Katsuaki Kato
IPC分类号： B01J23/89 , C25B11/08 , H01M4/86 , H01M4/90 , H01M4/92
CPC分类号： H01M4/925 , B01J23/8913 , H01M4/86 , H01M4/92 , H01M4/926 , H01M2004/8689 , H01M2300/0005 , H01M2300/0008 , H01M4/921
摘要： A platinum alloy electrocatalyst composed of a platinum-iron-cobalt alloy comprising 40 to 80 atomic percent of platinum, 10 to 40 atomic percent of iron and 10 to 40 atomic percent of cobalt supported on a suitable carrier has outstandingly high stability and catalytic activity. Electrodes using such an electrocatalyst (particularly when used as cathodes in acid-electrolyte fuel cells) remain stable for longer periods and have more than 30% higher output than electrodes using conventional catalysts.
摘要翻译：由合金载体上含有40〜80原子％铂，10〜40原子％铁和10〜40原子％钴的铂 - 铁 - 钴合金构成的铂合金电催化剂具有极高的稳定性和催化活性。使用这种电催化剂的电极（特别是当用作酸性电解质燃料电池中的阴极时）长时间保持稳定，并且比使用常规催化剂的电极的输出高出30％以上。

76. 发明授权

US4716087A Platinum-copper alloy electrocatalyst and acid-electrolyte fuel cell electrode using the same 失效
标题翻译：铂 - 铜合金电催化剂和使用其的酸性电解质燃料电池电极
公开(公告)号：US4716087A
公开(公告)日：1987-12-29
申请号：US940246
申请日：1986-12-10
申请人： Takashi Ito , Shigemitsu Matsuzawa , Katsuaki Kato
发明人： Takashi Ito , Shigemitsu Matsuzawa , Katsuaki Kato
IPC分类号： B01J23/89 , H01M4/86 , H01M4/90 , H01M4/92
CPC分类号： H01M4/925 , B01J23/8926 , H01M4/92 , H01M4/926 , H01M2004/8689 , H01M2300/0005 , H01M2300/0008 , H01M2300/0011 , H01M4/921
摘要： A platinum alloy electrocatalyst, composed of a platinum-copper alloy containing 15 to 50 atomic percent of copper (the balance being platinum) and supported on a suitable carrier, shows high activity over long periods because of the enhanced specific activity of supported metal and improved maintainability of its specific surface area. Thus acid-electrolyte fuel cells using the electrode comprising such an electrocatalyst feature better output performances and longer service life than fuel cells using conventional electrodes.
摘要翻译：铂合金电催化剂由含有15〜50原子百分比的铜（余量为铂）并负载于合适的载体上的铂 - 铜合金组成，长时间显示高活性，因为负载金属的比活性提高，其比表面积的可维持性。因此，使用包含这种电催化剂的电极的酸电解质燃料电池具有比使用常规电极的燃料电池更好的输出性能和更长的使用寿命。

77. 发明授权

US4621314A Thyristor converter control apparatus including differentiation arrangement to prevent abnormal operation 失效
标题翻译：晶闸管转换器控制装置包括差分装置，以防止异常运行
公开(公告)号：US4621314A
公开(公告)日：1986-11-04
申请号：US631817
申请日：1984-07-17
申请人： Takashi Ito
发明人： Takashi Ito
IPC分类号： H02M1/088 , H02M1/092 , H02H7/12
CPC分类号： H02M1/092
摘要： An apparatus for controlling a thyristor converter includes a plurality of voltage detectors provided for individual series-connected thyristors respectively for detecting the presence or absence of voltage applied to the thyristors, and elements for generating a thyristor triggering pulse signal representative of the logical sum of the voltage presence-absence signals from the voltage detectors and a triggering command signal commanding the desired triggering phase and on-period of the thyristor converter. The apparatus comprises a plurality of differentiation circuits differentiating the output signals of the plural voltage detectors respectively, and a signal synthesis circuit synthesizing the output signals of the differentiation circuits to generate an output signal indicative of the voltage presence or absence. By virtue of the above construction, the thyristor converter can continuously operate without being shut down even when any one of the thyristor voltage detection signals is disabled.
摘要翻译：一种用于控制晶闸管转换器的装置，包括分别为单独的串联连接的晶闸管提供的多个电压检测器，用于检测施加到晶闸管的电压是否存在，以及用于产生晶闸管触发脉冲信号的元件，来自电压检测器的电压无存在信号和指令期望的触发相位和晶闸管转换器导通周期的触发命令信号。该装置包括分别分离多个电压检测器的输出信号的多个微分电路和合成差分电路的输出信号的信号合成电路，以产生表示电压存在或不存在的输出信号。由于上述结构，即使当晶闸管电压检测信号中的任何一个被禁用时，晶闸管转换器也可以连续工作而不关闭。

78. 发明授权

US4435447A Method for forming an insulating film on a semiconductor substrate surface 失效
标题翻译：在半导体衬底表面上形成绝缘膜的方法
公开(公告)号：US4435447A
公开(公告)日：1984-03-06
申请号：US322718
申请日：1981-11-18
申请人： Takashi Ito , Takao Nozaki
发明人： Takashi Ito , Takao Nozaki
IPC分类号： C04B41/50 , C04B41/87 , H01L21/318 , B05D5/12
CPC分类号： C04B41/009 , C04B41/5066 , C04B41/87 , H01L21/3185 , C04B2111/00844
摘要： A method for forming an insulating film on the surface of a silicon semiconductor substrate of a semiconductor device. The semiconductor substrate is subjected to a direct thermal nitridation, in a gas atmosphere containing nitrogen or nitrogen atoms. The semiconductor substrate has an average concentration of oxygen of not more than 10.sup.18 /cm.sup.3. The silicon nitride film formed by the direct thermal nitridation is thin, even and amorphous. The structure of the interface between the silicon substrate and the silicon nitride film is highly dense.
摘要翻译：一种在半导体器件的硅半导体衬底的表面上形成绝缘膜的方法。半导体衬底在含有氮或氮原子的气氛中进行直接热氮化。半导体衬底的平均氧浓度不大于1018 / cm3。通过直接热氮化形成的氮化硅膜是薄的，均匀的和无定形的。硅衬底和氮化硅膜之间的界面的结构是高密度的。

79. 发明授权

US4353936A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4353936A
公开(公告)日：1982-10-12
申请号：US252974
申请日：1980-09-05
申请人： Takao Nozaki , Takashi Ito
发明人： Takao Nozaki , Takashi Ito
IPC分类号： H01L21/318 , B05D5/12 , B44C1/22 , H01L21/306
CPC分类号： H01L21/3185 , Y10S438/909 , Y10S438/974
摘要： A silicon nitride film is generated by heating a silicon substrate having an exposed surface in an ambient including ammonia thereby causing the exposed silicon to react with nitrogen atoms. The substrate is heated to a temperature of at least 900.degree. C. in an inert gas, such as argon, whereby the natural oxide film or impurity particles on the surface are subject to vapor etching. The substrate is then heated to a temperature in a range of 900.degree. C. to 1300.degree. C. in the ambient, including ammonia, to produce a dense and homogeneous amorphous silicon nitride film.
摘要翻译： PCT No.PCT / JP79 / 00046 Sec。 371日期1980年9月5日 102（e）1980年9月5日PCT PCT日期为1979年2月27日。通过在包括氨的环境中加热具有暴露表面的硅衬底产生氮化硅膜，从而使暴露的硅与氮原子反应。将衬底在诸如氩气的惰性气体中加热到至少900℃的温度，由此表面上的天然氧化物膜或杂质颗粒经历气相蚀刻。然后将基底在包括氨的环境中加热到900℃至1300℃的温度，以产生致密且均匀的非晶氮化硅膜。

80. 发明授权

US4331710A Method of forming an insulation film on semiconductor device surface 失效
标题翻译：在半导体器件表面上形成绝缘膜的方法
公开(公告)号：US4331710A
公开(公告)日：1982-05-25
申请号：US212083
申请日：1980-09-08
申请人： Takao Nozaki , Takashi Ito
发明人： Takao Nozaki , Takashi Ito
IPC分类号： H01L21/318
CPC分类号： H01L21/3185 , Y10S148/112 , Y10S148/114
摘要： In a method of forming an insulating film on the surface of a silicon substrate, a silicon nitride film is formed on such surface by direct thermal nitridation. The nitridation is initially in an ambient gas of nitrogen whereby a comparatively thick silicon nitride film is formed. The ambient gas is then changed to ammonia or a mixture of an inert gas and ammonia to densify the silicon nitride film. The resultant film is useful as an insulating film in semiconductor devices, masks for impurity diffusion and selective oxidation in the manufacture thereof.
摘要翻译： PCT No.PCT / JP79 / 00039 Sec。 371日期1980年9月8日第 102（e）1980年9月8日PCT申请日1979年2月19日PCT公布。出版物WO80 / 01739 日本1980年8月21日。在硅衬底表面上形成绝缘膜的方法中，通过直接热氮化在这种表面上形成氮化硅膜。氮化最初处于氮气的环境气体中，由此形成较厚的氮化硅膜。然后将环境气体变为氨或惰性气体和氨的混合物以致密化氮化硅膜。所得膜可用作半导体器件中的绝缘膜，其制造中用于杂质扩散和选择性氧化的掩模。

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