专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4298629A Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation 失效
标题翻译：通过直接氮化在硅半导体衬底表面上形成氮化物绝缘膜的方法
公开(公告)号：US4298629A
公开(公告)日：1981-11-03
申请号：US128172
申请日：1980-03-07
申请人： Takao Nozaki , Takashi Ito , Hideki Arakawa , Hajime Ishikawa , Masaichi Shinoda
发明人： Takao Nozaki , Takashi Ito , Hideki Arakawa , Hajime Ishikawa , Masaichi Shinoda
IPC分类号： H01L29/78 , C01B21/068 , H01L21/318 , C23C11/00
CPC分类号： H01L21/3185 , H01L21/318
摘要： In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300.degree. C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.
摘要翻译：在半导体衬底表面上形成绝缘膜的方法中，绝缘膜的氮化硅通过等离子体CVD或直接氮化形成。在本发明中，在直接氮化反应室中产生含氮气体的气体等离子体，在气体等离子体气氛中将半导体硅体加热至约800〜约1300℃的温度，由此形成氮化硅膜。所得到的氮化硅膜具有致密结构和低氧浓度，并且通过硅的直接氮化在短时间内形成厚的氮化硅膜。

2. 发明授权

US5101249A Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US5101249A
公开(公告)日：1992-03-31
申请号：US859237
申请日：1986-05-06
申请人： Shinpei Hijiya , Takao Nozaki , Takashi Ito , Hajime Ishikawa
发明人： Shinpei Hijiya , Takao Nozaki , Takashi Ito , Hajime Ishikawa
IPC分类号： H01L21/8247 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7886
摘要： A nonvolatile semiconductor memory device comprising: a substrate, a pair of source and drain regions; a channel region between the source and drain regions; a pair of first and second insulating layers on the channel region, and a floating-gate or traps between the first and second insulating layer. The band gap of the first insulating layer increases gradually from the substrate to the floating gate or the traps.
摘要翻译：一种非易失性半导体存储器件，包括：衬底，一对源极和漏极区; 源区和漏区之间的沟道区; 沟道区域上的一对第一和第二绝缘层，以及在第一和第二绝缘层之间的浮栅或阱。第一绝缘层的带隙从衬底到浮栅或陷阱逐渐增加。

3. 发明授权

US4435447A Method for forming an insulating film on a semiconductor substrate surface 失效
标题翻译：在半导体衬底表面上形成绝缘膜的方法
公开(公告)号：US4435447A
公开(公告)日：1984-03-06
申请号：US322718
申请日：1981-11-18
申请人： Takashi Ito , Takao Nozaki
发明人： Takashi Ito , Takao Nozaki
IPC分类号： C04B41/50 , C04B41/87 , H01L21/318 , B05D5/12
CPC分类号： C04B41/009 , C04B41/5066 , C04B41/87 , H01L21/3185 , C04B2111/00844
摘要： A method for forming an insulating film on the surface of a silicon semiconductor substrate of a semiconductor device. The semiconductor substrate is subjected to a direct thermal nitridation, in a gas atmosphere containing nitrogen or nitrogen atoms. The semiconductor substrate has an average concentration of oxygen of not more than 10.sup.18 /cm.sup.3. The silicon nitride film formed by the direct thermal nitridation is thin, even and amorphous. The structure of the interface between the silicon substrate and the silicon nitride film is highly dense.
摘要翻译：一种在半导体器件的硅半导体衬底的表面上形成绝缘膜的方法。半导体衬底在含有氮或氮原子的气氛中进行直接热氮化。半导体衬底的平均氧浓度不大于1018 / cm3。通过直接热氮化形成的氮化硅膜是薄的，均匀的和无定形的。硅衬底和氮化硅膜之间的界面的结构是高密度的。

4. 发明授权

US4353936A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4353936A
公开(公告)日：1982-10-12
申请号：US252974
申请日：1980-09-05
申请人： Takao Nozaki , Takashi Ito
发明人： Takao Nozaki , Takashi Ito
IPC分类号： H01L21/318 , B05D5/12 , B44C1/22 , H01L21/306
CPC分类号： H01L21/3185 , Y10S438/909 , Y10S438/974
摘要： A silicon nitride film is generated by heating a silicon substrate having an exposed surface in an ambient including ammonia thereby causing the exposed silicon to react with nitrogen atoms. The substrate is heated to a temperature of at least 900.degree. C. in an inert gas, such as argon, whereby the natural oxide film or impurity particles on the surface are subject to vapor etching. The substrate is then heated to a temperature in a range of 900.degree. C. to 1300.degree. C. in the ambient, including ammonia, to produce a dense and homogeneous amorphous silicon nitride film.
摘要翻译： PCT No.PCT / JP79 / 00046 Sec。 371日期1980年9月5日 102（e）1980年9月5日PCT PCT日期为1979年2月27日。通过在包括氨的环境中加热具有暴露表面的硅衬底产生氮化硅膜，从而使暴露的硅与氮原子反应。将衬底在诸如氩气的惰性气体中加热到至少900℃的温度，由此表面上的天然氧化物膜或杂质颗粒经历气相蚀刻。然后将基底在包括氨的环境中加热到900℃至1300℃的温度，以产生致密且均匀的非晶氮化硅膜。

5. 发明授权

US4331710A Method of forming an insulation film on semiconductor device surface 失效
标题翻译：在半导体器件表面上形成绝缘膜的方法
公开(公告)号：US4331710A
公开(公告)日：1982-05-25
申请号：US212083
申请日：1980-09-08
申请人： Takao Nozaki , Takashi Ito
发明人： Takao Nozaki , Takashi Ito
IPC分类号： H01L21/318
CPC分类号： H01L21/3185 , Y10S148/112 , Y10S148/114
摘要： In a method of forming an insulating film on the surface of a silicon substrate, a silicon nitride film is formed on such surface by direct thermal nitridation. The nitridation is initially in an ambient gas of nitrogen whereby a comparatively thick silicon nitride film is formed. The ambient gas is then changed to ammonia or a mixture of an inert gas and ammonia to densify the silicon nitride film. The resultant film is useful as an insulating film in semiconductor devices, masks for impurity diffusion and selective oxidation in the manufacture thereof.
摘要翻译： PCT No.PCT / JP79 / 00039 Sec。 371日期1980年9月8日第 102（e）1980年9月8日PCT申请日1979年2月19日PCT公布。出版物WO80 / 01739 日本1980年8月21日。在硅衬底表面上形成绝缘膜的方法中，通过直接热氮化在这种表面上形成氮化硅膜。氮化最初处于氮气的环境气体中，由此形成较厚的氮化硅膜。然后将环境气体变为氨或惰性气体和氨的混合物以致密化氮化硅膜。所得膜可用作半导体器件中的绝缘膜，其制造中用于杂质扩散和选择性氧化的掩模。

6. 发明授权

US4282270A Method for forming an insulating film layer of silicon oxynitride on a semiconductor substrate surface 失效
标题翻译：在半导体衬底表面上形成氮氧化硅绝缘膜层的方法
公开(公告)号：US4282270A
公开(公告)日：1981-08-04
申请号：US84570
申请日：1979-10-15
申请人： Takao Nozaki , Takashi Ito
发明人： Takao Nozaki , Takashi Ito
IPC分类号： H01L21/318 , H01L21/314 , H01L21/316
CPC分类号： H01L21/3144 , Y10S438/909
摘要： An insulating film layer consisting of silicon oxynitride is formed on a silicon semiconductor substrate surface by bringing a surface of a silicon substrate into contact with an ammonia gas atmosphere containing a gas comprising containing substance gas, for example, oxygen gas, carbon dioxide gas, carbon monoxide gas, nitrogen monoxide gas, nitrogen dioxide gas, or water vapor, in a volume concentration of from 10.sup.2 to 10.sup.4 ppm in terms of molecular oxygen, at an elevated temperature, for example, of from 900.degree.to 1300.degree. C.
摘要翻译：通过使硅衬底的表面与包含含有物质气体的气体的氨气气氛例如氧气，二氧化碳气体，碳气体形成在硅半导体衬底表面上，形成由氮氧化硅组成的绝缘膜层一氧化碳气体，一氧化氮气体，二氧化氮气体或水蒸气，在分子氧方面的体积浓度为102〜104ppm，例如在900〜1300℃。

7. 发明授权

US4980307A Process for producing a semiconductor device having a silicon oxynitride insulative film 失效
标题翻译：一种具有氮氧化硅绝缘膜的半导体器件的制造方法
公开(公告)号：US4980307A
公开(公告)日：1990-12-25
申请号：US401489
申请日：1989-08-30
申请人： Takashi Ito , Takao Nozaki
发明人： Takashi Ito , Takao Nozaki
IPC分类号： H01L21/28 , H01L21/314 , H01L21/318 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L21/265
CPC分类号： H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L29/51 , H01L29/511 , H01L21/28167 , Y10S148/043 , Y10S148/112 , Y10S148/114
摘要： An insulative film, such as SiO.sub.2, Si.sub.3 N.sub.4 and PSG films, for example, is commonly used the passivation film or gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH.sub.3 gas, of an SiO.sub.2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.

8. 发明授权

US4621277A Semiconductor device having insulating film 失效
标题翻译：具有绝缘膜的半导体器件
公开(公告)号：US4621277A
公开(公告)日：1986-11-04
申请号：US372720
申请日：1982-04-28
申请人： Takashi Ito , Takao Nozaki
发明人： Takashi Ito , Takao Nozaki
IPC分类号： H01L21/28 , H01L21/314 , H01L21/318 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L29/34
CPC分类号： H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L29/51 , H01L29/511 , H01L21/28167 , Y10S148/043 , Y10S148/112 , Y10S148/114
摘要： An insulative film, such as SiO.sub.2, Si.sub.3 N.sub.4 and PSG films, is commonly used, for example, the passivation film or to insulate the gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH.sub.3 gas, of an SiO.sub.2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.
摘要翻译：通常使用诸如SiO 2，Si 3 N 4和PSG膜的绝缘膜，例如钝化膜或使MISFET的栅电极绝缘。通过提供通过例如在NH 3气体中形成SiO 2膜，优选直接热氧化的硅膜形成的绝缘膜来增强半导体器件的生产或操作期间的绝缘膜的稳定性。根据本发明的绝缘膜用于MISFET中的栅极绝缘膜，用于半导体器件的电容器或钝化膜，以及用于选择性地形成半导体器件的电路元件的掩模。形成绝缘膜的方法可以包括连续的氮化，氧化和氮化步骤。

9. 发明授权

US06769637B2 Injector module, injector electric block body, injector main bodies to be used for the same, and ignition coil device module 失效
标题翻译：注射器模块，注射器电块体，用于其的喷射器主体和点火线圈装置模块
公开(公告)号：US06769637B2
公开(公告)日：2004-08-03
申请号：US09994628
申请日：2001-11-28
申请人： Kazushige Nakamura , Isao Isshiki , Takao Nozaki , Fumiyoshi Tanigawa
发明人： Kazushige Nakamura , Isao Isshiki , Takao Nozaki , Fumiyoshi Tanigawa
IPC分类号： F02M5100
CPC分类号： F02M51/061 , F02D41/3005 , F02D2400/21 , F02M51/005 , F02M69/465 , F02P3/02
摘要： Electromagnetic coil parts 25 and wiring 26 for connection to the electromagnetic coil parts 25 are installed inside injector electric block body 20 in which injector main body housing holes 21h are made in accordance with injector mounting holes Eh of the engine body E side, and injector main bodies 30 having valve parts 35 are inserted into the injector main body housing holes 21h, whereby the valve parts 35 are driven to open and close by means of exciting and non-exciting operation of the electromagnetic coil parts 25. Further, an ignition coil device module is provided with ignition coil devices 102 provided corresponding to a plurality of combustion chambers of an engine, respectively, wherein connection surface base portions at which connecting terminals are exposed are provided on one-side surface of each ignition coil device 102.
摘要翻译：用于连接电磁线圈部25的电磁线圈部25和配线26安装在喷射器电块体20的内侧，喷射器电动块主体20中，根据发动机主体E侧的喷射器安装孔Eh，喷射器主体容纳孔21h，具有阀部件35的主体30被插入到喷射器主体容纳孔21h中，由此通过电磁线圈部件25的励磁和非励磁操作来驱动阀部件35打开和关闭。此外，点火线圈装置模块设置有分别对应于发动机的多个燃烧室设置的点火线圈装置102，其中连接端子暴露的连接表面基部设置在每个点火线圈装置102的单侧表面上。

10. 发明授权

US06398563B1 Shield connector 失效
标题翻译：屏蔽连接器
公开(公告)号：US06398563B1
公开(公告)日：2002-06-04
申请号：US09686905
申请日：2000-10-12
申请人： Syuuichi Kanagawa , Ichiaki Sano , Takao Nozaki , Kiyofumi Ichida
发明人： Syuuichi Kanagawa , Ichiaki Sano , Takao Nozaki , Kiyofumi Ichida
IPC分类号： H01R13648
CPC分类号： H01R9/0518
摘要： A shield connector is arranged such that a flange 22 fixed to a mating shielding wall W is made electrically conductive, and a shielding layer 13 of a shielding wire 10 is conductingly connected to an electrically conductive sleeve 26 which is formed integrally therewith. Consequently, the structure for allowing the shielding layer 13 and the mating shielding wall to conduct with each other can be simplified, and the number of parts can be reduced. A flange 22 provided in a shield connector has electrical conductivity and is provided with a U-shaped slot portion 24 which is capable of accommodating a shielding wire 10 from a lateral direction. A shielding layer 13 of the shielding wire 10 is brought into close contact with the inner surface of this U-shaped slot portion 24 so as to set the shielding layer 13 and the flange 22 in a conductingly connected state, and this subassembly is inserted in a mold to form a housing 21. Thus, with the shield connector in accordance with the invention, since the flange 22 fixed to a mating shielding wall is made electrically conductive, and the shielding layer 13 is conductingly connected to this flange 22, the structure for allowing the shielding layer 13 and the mating shielding wall to conduct with each other can be simplified, and the number of parts can be reduced.
摘要翻译：屏蔽连接器被布置成使得固定到匹配屏蔽壁W的凸缘22导电，并且屏蔽线10的屏蔽层13导电地连接到与其一体形成的导电套筒26。因此，可以简化用于使屏蔽层13和配合屏蔽壁彼此导通的结构，并且可以减少部件的数量。设置在屏蔽连接器中的凸缘22具有导电性并且设置有U 形状的槽部24能够从横向容纳屏蔽线10。屏蔽线10的屏蔽层13与该U形槽部24的内表面紧密接触，以将屏蔽层13和凸缘22设置在导电连接状态，并将该子组件插入因此，根据本发明的屏蔽连接器，由于固定在配合屏蔽壁上的凸缘22导电，屏蔽层13与该凸缘22导通地连接，所以结构可以简化屏蔽层13和匹配屏蔽壁彼此导通，并且可以减少部件的数量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式