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71. 发明授权

US08668365B2 Optoelectronic device 有权
标题翻译：光电器件
公开(公告)号：US08668365B2
公开(公告)日：2014-03-11
申请号：US13119342
申请日：2009-09-01
申请人： Peter Brick , Sven Weber-Rabsilber , Michael Zitzlsperger
发明人： Peter Brick , Sven Weber-Rabsilber , Michael Zitzlsperger
IPC分类号： F21V7/00 , F21S8/00
CPC分类号： H01L33/60 , G09F27/008 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： An optoelectronic device includes at least one luminescence diode chip which emits electromagnetic radiation during operation of the optoelectronic device, and at least one shield against stray radiation which laterally surrounds the luminescence diode chip only in places, wherein each shield is integral with a component of the optoelectronic device.
摘要翻译：光电子器件包括至少一个发光二极管芯片，其在光电子器件的工作过程中发射电磁辐射，以及至少一个防止杂散辐射的屏蔽物，其仅在某些位置横向包围发光二极管芯片，其中每个屏蔽件与光电器件。

72. 发明申请

US20130250610A1 SURFACE LIGHT GUIDE AND PLANAR EMITTER 有权
标题翻译：表面光导和平面发射体
公开(公告)号：US20130250610A1
公开(公告)日：2013-09-26
申请号：US13642924
申请日：2011-03-23
申请人： Peter Brick , Joachim Frank , Stephan Kaiser , Gerhard Kuhn , Ales Markytan , Julius Muschaweck , Christian Neugirg
发明人： Peter Brick , Joachim Frank , Stephan Kaiser , Gerhard Kuhn , Ales Markytan , Julius Muschaweck , Christian Neugirg
IPC分类号： F21V8/00
CPC分类号： G02B6/0035 , G02B6/004 , G02B6/0041 , G02B6/0055 , G02B6/0063
摘要： A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.
摘要翻译：表面光导包括沿着表面光导的主延伸平面延伸的辐射出射区域，并且包括具有散射位置的导光区域和布置在导光区域的第一主区域上的涂层，其中辐射耦合在沿着在散射位置散射之后入射在第一主区域上的主延伸平面具有过度增加的辐射分量，并且涂层以目标方式减少辐射出射区域过度增加的辐射分量。

73. 发明申请

US20110215369A1 LUMINESCENCE DIODE CHIP 有权
标题翻译：发光二极管芯片
公开(公告)号：US20110215369A1
公开(公告)日：2011-09-08
申请号：US13124145
申请日：2009-10-16
申请人： Peter Brick , Matthias Sabathil , Hagen Luckner
发明人： Peter Brick , Matthias Sabathil , Hagen Luckner
IPC分类号： H01L33/62
CPC分类号： H01L33/387 , F21S41/155 , H01L33/20 , H01L33/22 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.
摘要翻译：发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。第一电连接层特别地与多个接触区域接触并与半导体层序列接触。在发光二极管芯片的情况下，通过沿着主要平面的接触区域的面积密度的不均匀分布，在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布半导体层序列。

74. 发明授权

US07693201B2 Light-emitting semiconductor component comprising a protective diode 有权
标题翻译：包含保护二极管的发光半导体元件
公开(公告)号：US07693201B2
公开(公告)日：2010-04-06
申请号：US10580969
申请日：2004-10-26
申请人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
发明人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
IPC分类号： H01S5/183 , H01S5/125
CPC分类号： H01S5/06825 , H01L27/15 , H01S5/0261 , H01S5/042 , H01S5/18311 , H01S5/18313 , H01S5/40
摘要： A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).
摘要翻译：一种发光半导体元件，其包含具有p掺杂半导体层（4）的面积的半导体层（2）和n掺杂半导体层（3）的序列，在其间形成有第一pn结（5a，5b）。通过绝缘部分（6）将pn结（5a，5b）沿横向细分成发光部分（7）和保护二极管部分（8）。形成与p掺杂区域（4）一起用作保护二极管的第二pn结（10）的n掺杂层（9）在p掺杂区域（4）的区域中被施加到p掺杂区域保护二极管部分（8）中，保护二极管部分（8）中的第一pn结（5b）的面积大于发光部分（7）中的第一pn结（5a）的面积。保护二极管部分（8）保护发光半导体部件免受静电放电（ESD）的电压脉冲的影响。

75. 发明授权

US07633982B2 Optically pumped surface emitting semiconductor laser device 有权
标题翻译：光学泵浦表面发射半导体激光器件
公开(公告)号：US07633982B2
公开(公告)日：2009-12-15
申请号：US11140862
申请日：2005-05-31
申请人： Tony Albrecht , Peter Brick
发明人： Tony Albrecht , Peter Brick
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , H01S5/026 , H01S5/041 , H01S5/1064 , H01S5/4056 , H01S2301/18
摘要： A surface emitting semiconductor laser device, having at least one monolithically integrated pump radiation source (20), in which the pump radiation source (20) has at least one edge emitting semiconductor structure (9) that is suitable for emission of electromagnetic radiation whose intensity profile transversely with respect to the emission direction (z) of the semiconductor structure follows a predeterminable curve. Such a surface emitting semiconductor laser device emits electromagnetic radiation having a particularly good beam quality.
摘要翻译：一种表面发射半导体激光器件，具有至少一个单片集成泵浦辐射源（20），其中所述泵浦辐射源（20）具有至少一个边缘发射半导体结构（9），所述边缘发射半导体结构（9）适于发射电磁辐射，所述电磁辐射的强度相对于半导体结构的发射方向（z）横向的剖面遵循可预定的曲线。这种表面发射半导体激光器件发射具有特别好的光束质量的电磁辐射。

76. 发明授权

US07573927B2 Semiconductor laser with reduced heat loss 失效
标题翻译：半导体激光器具有减少的热损失
公开(公告)号：US07573927B2
公开(公告)日：2009-08-11
申请号：US12080378
申请日：2008-04-01
申请人： Peter Brick
发明人： Peter Brick
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/02461 , H01S5/041 , H01S5/105 , H01S5/1078 , H01S5/141 , H01S5/18319 , H01S5/18352 , H01S5/34 , H01S5/343
摘要： Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the semiconductor chip by spontaneously emitted radiation. The active layer includes a region provided for optical pumping by a pump radiation source. The optically pumped region of the active layer is surrounded by a region having, in a direction perpendicular to the main radiating direction, a periodic structure that forms a photonic crystal in which radiation having the emission wavelength is not capable of propagation.
摘要翻译：公开了一种半导体激光器。半导体激光器包括包含有源层并沿主辐射方向发射辐射的半导体芯片。有源层在垂直于主辐射方向的方向上构造，以通过自发发射的辐射来减少半导体芯片的加热。有源层包括用于通过泵浦辐射源进行光泵浦的区域。有源层的光泵浦区域被沿着与主辐射方向垂直的方向的区域包围，该区域形成具有发射波长的辐射不能传播的光子晶体的周期性结构。

77. 发明授权

US07524687B2 Method for producing a radiation-emitting-and-receiving semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片的制造方法
公开(公告)号：US07524687B2
公开(公告)日：2009-04-28
申请号：US12072365
申请日：2008-02-26
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L31/173
摘要： A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.
摘要翻译：一种用于制造集成半导体部件的方法，包括用于发射辐射的第一半导体层结构和用于接收辐射的第二半导体层结构，其中首先提供衬底，并且包含辐射产生区的第一半导体层序列外延地沉积在基质。随后在第一半导体层序列上外延沉积包含辐射吸收区的第二半导体层序列。然后将第二半导体层序列图案化以便露出第一位置和第二位置。第一半导体层结构与第二半导体层结构电绝缘。最后，将第一接触层施加到衬底的自由表面，并且至少将第二接触层施加到第一和第二位置用于接触连接。

78. 发明授权

US07468999B2 Laser diode apparatus, laser arrangement having at least one laser diode apparatus, and optically pumped laser 有权
标题翻译：激光二极管装置，具有至少一个激光二极管装置的激光装置和光泵浦激光器
公开(公告)号：US07468999B2
公开(公告)日：2008-12-23
申请号：US11541131
申请日：2006-09-28
申请人： Harald König , Peter Brick , Jürgen Moosburger
发明人： Harald König , Peter Brick , Jürgen Moosburger
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/0224 , H01S5/02276 , H01S5/02461 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/183
摘要： A laser diode apparatus (2) having a plurality of active regions (4a . . . 4n) which are arranged side by side and are designed for radiation production when the laser diode apparatus is in operation. A lateral dimension (ba . . . bn) of the active regions is varied in the lateral direction, and/or the distance (Da . . . D1) between adjacent active regions is varied in the lateral direction. Furthermore, a laser arrangement (1) is specified, having a laser diode apparatus which is arranged on a mount (6) with the mount being matched to the laser diode apparatus. Furthermore, a laser which is optically pumped by means of the laser diode apparatus or the laser arrangement is specified.
摘要翻译：一种激光二极管装置（2），具有并排配置的多个有源区域（4a，...，4n），并被设计成在激光二极管装置工作时进行辐射生成。有源区域的横向尺寸（ba。bn）在横向方向上变化，和/或相邻有源区域之间的距离（Da ... D1）在横向方向上变化。此外，具有激光装置（1），其具有设置在安装件与激光二极管装置匹配的安装座（6）上的激光二极管装置。此外，指定了通过激光二极管装置或激光装置光学泵浦的激光器。

79. 发明申请

US20070258500A1 Light-Emitting Semiconductor Component Comprising a Protective Diode 有权
标题翻译：包含保护二极管的发光半导体元件
公开(公告)号：US20070258500A1
公开(公告)日：2007-11-08
申请号：US10580969
申请日：2004-10-26
申请人： Tony Albrecht , Peter Brick , Marc Phillippens , Glenn-Yves Plaine
发明人： Tony Albrecht , Peter Brick , Marc Phillippens , Glenn-Yves Plaine
IPC分类号： H01S5/183 , H01S5/125
CPC分类号： H01S5/06825 , H01L27/15 , H01S5/0261 , H01S5/042 , H01S5/18311 , H01S5/18313 , H01S5/40
摘要： A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).
摘要翻译：一种发光半导体部件，其包含具有p掺杂半导体层（4）的面积和n掺杂半导体层（3）的半导体层（2）的序列，在其间形成有第一pn结（5a，5b）形成了。 pn结（5a，5b）通过绝缘部分（6）在横向被细分成发光部分（7）和保护二极管部分（8）。形成与p掺杂区域（4）一起用作保护二极管的第二pn结（10）的n掺杂层（9）在p掺杂区域（4）的区域中被施加到p掺杂区域保护二极管部分（8）中，保护二极管部分（8）中的第一pn结（5b）具有比发光部分（7）中的第一pn结（5a）更大的面积。保护二极管部分（8）保护发光半导体部件免受静电放电（ESD）的电压脉冲的影响。

80. 发明授权

US07075124B2 Radiation-sensitive semiconductor body having an integrated filter layer 有权
标题翻译：具有集成滤光层的辐射敏感半导体本体
公开(公告)号：US07075124B2
公开(公告)日：2006-07-11
申请号：US10909036
申请日：2004-07-30
申请人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
发明人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
IPC分类号： H01L31/248
CPC分类号： H01L31/02162 , H01L31/0547 , Y02E10/52
摘要： A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between λ1 and λ2 where λ2>λ1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below λ2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below λ1, and passes electromagnetic radiation at a wavelength above λ1.
摘要翻译：一种辐射敏感半导体本体，其在至少两个接触层（6,7）之间具有至少一个辐射吸收有源面积（2），并接收在λ1和1之间的波长范围内的电磁辐射 λ2其中λ2 λ1 <1>。在有源区域（2）和辐射输入表面（9）之间布置滤光层（5）。有源区域（2）检测波长低于λ2的电磁辐射。过滤层（5）吸收波长低于λ1的电磁辐射，并通过波长高于λ1的电磁辐射。

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