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1. 发明申请

US20050056904A1 Radiation-sensitive semiconductor body having an integrated filter layer 有权
标题翻译：具有集成滤光层的辐射敏感半导体本体
公开(公告)号：US20050056904A1
公开(公告)日：2005-03-17
申请号：US10909036
申请日：2004-07-30
申请人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
发明人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
IPC分类号： H01L31/02 , H01L31/00
CPC分类号： H01L31/02162 , H01L31/0547 , Y02E10/52
摘要： A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between λ1 and λ2 where λ2>λ1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below λ2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below λ1, and passes electromagnetic radiation at a wavelength above λ1.
摘要翻译：一种辐射敏感半导体本体，其在至少两个接触层（6,7）之间具有至少一个辐射吸收有源区域（2），并接收λ1和λ2之间的波长范围的电磁辐射，其中λ2>λ1。在有源区域（2）和辐射输入表面（9）之间布置滤光层（5）。有源区域（2）检测波长低于λ2的电磁辐射。滤波器层（5）吸收波长低于λ1的电磁辐射，并通过波长高于λ1的电磁辐射。

2. 发明申请

US20080153189A1 Method for producing a radiation-emitting-and-receiving semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片的制造方法
公开(公告)号：US20080153189A1
公开(公告)日：2008-06-26
申请号：US12072365
申请日：2008-02-26
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L31/173
摘要： A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.
摘要翻译：一种用于制造集成半导体部件的方法，包括用于发射辐射的第一半导体层结构和用于接收辐射的第二半导体层结构，其中首先提供衬底，并且包含辐射产生区的第一半导体层序列外延地沉积在基质。随后在第一半导体层序列上外延沉积包含辐射吸收区的第二半导体层序列。然后将第二半导体层序列图案化以便露出第一位置和第二位置。第一半导体层结构与第二半导体层结构电绝缘。最后，将第一接触层施加到衬底的自由表面，并且至少将第二接触层施加到第一和第二位置用于接触连接。

3. 发明申请

US20070041414A1 Semiconductor laser showing reduced sensitivity to disturbances 审中-公开
标题翻译：半导体激光器对干扰的灵敏度降低
公开(公告)号：US20070041414A1
公开(公告)日：2007-02-22
申请号：US10550994
申请日：2004-02-23
申请人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
发明人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
IPC分类号： H01S5/00
CPC分类号： H01S5/18377 , H01S5/2022 , H01S2301/02 , H01S2301/163
摘要： A semiconductor laser, contains at least one absorbing layer (8) in its laser resonator, said absorbing layer reducing the transmission TRes of the laser radiation (10) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation (9) fed back into the laser resonator. This reduces fluctuations in the output power due to fed-back radiation (9).
摘要翻译：半导体激光器在其激光谐振器中包含至少一个吸收层（8），所述吸收层减少了激光谐振器中的激光辐射（10）的透射率T res，以减少半导体激光器对由反馈到激光谐振器中的辐射（9）产生的干扰的灵敏度。这减少了由反馈辐射引起的输出功率的波动（9）。

4. 发明申请

US20050110026A1 Radiation-emitting-and-receiving semiconductor chip and method for producing such a semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片及其制造方法
公开(公告)号：US20050110026A1
公开(公告)日：2005-05-26
申请号：US10951525
申请日：2004-09-28
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L31/12 , H01L27/15 , H01L31/173
CPC分类号： H01L27/15 , H01L31/173
摘要： A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2). The second semiconductor layer construction (2) has an electromagnetic-radiation-absorbing region (9), the composition of the radiation-generating region (5) being different from that of the radiation-absorbing region (9).
摘要翻译：辐射发射和接收半导体部件至少具有用于发射辐射的第一半导体层结构（1）和用于接收辐射的第二半导体层结构（2），所述第二半导体层结构（2）以彼此间隔开的方式布置公共衬底（3）并且具有至少一个第一接触层（4）。第一半导体层结构（1）具有布置在第一半导体层结构（1）的p导电半导体层（6）和n导电半导体层（7）之间的电磁辐射产生区域（5）。第二接触层（8）至少部分地布置在远离基板（3）的第一半导体层结构（1）的表面和第二半导体层结构（2）的表面上。第二半导体层结构（2）具有电磁辐射吸收区域（9），辐射产生区域（5）的组成与辐射吸收区域（9）的组成不同。

5. 发明授权

US07335922B2 Radiation-emitting-and-receiving semiconductor chip and method for producing such a semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片及其制造方法
公开(公告)号：US07335922B2
公开(公告)日：2008-02-26
申请号：US10951525
申请日：2004-09-28
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L31/173
摘要： A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2). The second semiconductor layer construction (2) has an electromagnetic-radiation-absorbing region (9), the composition of the radiation-generating region (5) being different from that of the radiation-absorbing region (9).
摘要翻译：辐射发射和接收半导体部件至少具有用于发射辐射的第一半导体层结构（1）和用于接收辐射的第二半导体层结构（2），所述第二半导体层结构（2）以彼此间隔开的方式布置公共衬底（3）并且具有至少一个第一接触层（4）。第一半导体层结构（1）具有布置在第一半导体层结构（1）的p导电半导体层（6）和n导电半导体层（7）之间的电磁辐射产生区域（5）。第二接触层（8）至少部分地布置在远离基板（3）的第一半导体层结构（1）的表面和第二半导体层结构（2）的表面上。第二半导体层结构（2）具有电磁辐射吸收区域（9），辐射产生区域（5）的组成与辐射吸收区域（9）的组成不同。

6. 发明授权

US07693201B2 Light-emitting semiconductor component comprising a protective diode 有权
标题翻译：包含保护二极管的发光半导体元件
公开(公告)号：US07693201B2
公开(公告)日：2010-04-06
申请号：US10580969
申请日：2004-10-26
申请人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
发明人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
IPC分类号： H01S5/183 , H01S5/125
CPC分类号： H01S5/06825 , H01L27/15 , H01S5/0261 , H01S5/042 , H01S5/18311 , H01S5/18313 , H01S5/40
摘要： A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).
摘要翻译：一种发光半导体元件，其包含具有p掺杂半导体层（4）的面积的半导体层（2）和n掺杂半导体层（3）的序列，在其间形成有第一pn结（5a，5b）。通过绝缘部分（6）将pn结（5a，5b）沿横向细分成发光部分（7）和保护二极管部分（8）。形成与p掺杂区域（4）一起用作保护二极管的第二pn结（10）的n掺杂层（9）在p掺杂区域（4）的区域中被施加到p掺杂区域保护二极管部分（8）中，保护二极管部分（8）中的第一pn结（5b）的面积大于发光部分（7）中的第一pn结（5a）的面积。保护二极管部分（8）保护发光半导体部件免受静电放电（ESD）的电压脉冲的影响。

7. 发明授权

US07524687B2 Method for producing a radiation-emitting-and-receiving semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片的制造方法
公开(公告)号：US07524687B2
公开(公告)日：2009-04-28
申请号：US12072365
申请日：2008-02-26
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L31/173
摘要： A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.
摘要翻译：一种用于制造集成半导体部件的方法，包括用于发射辐射的第一半导体层结构和用于接收辐射的第二半导体层结构，其中首先提供衬底，并且包含辐射产生区的第一半导体层序列外延地沉积在基质。随后在第一半导体层序列上外延沉积包含辐射吸收区的第二半导体层序列。然后将第二半导体层序列图案化以便露出第一位置和第二位置。第一半导体层结构与第二半导体层结构电绝缘。最后，将第一接触层施加到衬底的自由表面，并且至少将第二接触层施加到第一和第二位置用于接触连接。

8. 发明授权

US07075124B2 Radiation-sensitive semiconductor body having an integrated filter layer 有权
标题翻译：具有集成滤光层的辐射敏感半导体本体
公开(公告)号：US07075124B2
公开(公告)日：2006-07-11
申请号：US10909036
申请日：2004-07-30
申请人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
发明人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
IPC分类号： H01L31/248
CPC分类号： H01L31/02162 , H01L31/0547 , Y02E10/52
摘要： A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between λ1 and λ2 where λ2>λ1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below λ2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below λ1, and passes electromagnetic radiation at a wavelength above λ1.
摘要翻译：一种辐射敏感半导体本体，其在至少两个接触层（6,7）之间具有至少一个辐射吸收有源面积（2），并接收在λ1和1之间的波长范围内的电磁辐射 λ2其中λ2 λ1 <1>。在有源区域（2）和辐射输入表面（9）之间布置滤光层（5）。有源区域（2）检测波长低于λ2的电磁辐射。过滤层（5）吸收波长低于λ1的电磁辐射，并通过波长高于λ1的电磁辐射。

9. 发明授权

US07620087B2 Radiation-emitting semiconductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07620087B2
公开(公告)日：2009-11-17
申请号：US11047833
申请日：2005-01-31
申请人： Marc Philippens , Tony Albrecht
发明人： Marc Philippens , Tony Albrecht
IPC分类号： H01S5/00
CPC分类号： H01L27/15 , H01L33/08 , H01S5/026 , H01S5/0425 , H01S5/18311 , H01S2301/18
摘要： A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength λ1 (11) and the second active zone being provided for generating a radiation having a second wavelength λ2 (22), the radiation having the first wavelength λ1 being coherent and the radiation having the second wavelength λ2 being incoherent.
摘要翻译：一种辐射发射半导体部件，包括具有第一有源区（1）的半导体本体（3）和布置在所述第一有源区上方的第二有源区（2），所述第一有源区被设置用于产生具有第一波长 λ1（11）并且第二有源区被提供用于产生具有第二波长λ2（22）的辐射，所述具有第一波长λ1的辐射是相干的，并且具有第二波长λ2的辐射是不相干的。

10. 发明授权

US07856045B2 Surface emitting semiconductor component 有权
标题翻译：表面发射半导体元件
公开(公告)号：US07856045B2
公开(公告)日：2010-12-21
申请号：US11634708
申请日：2006-12-05
申请人： Marc Philippens , Tony Albrecht , Martin Müller , Wolfgang Schmid
发明人： Marc Philippens , Tony Albrecht , Martin Müller , Wolfgang Schmid
IPC分类号： H01S5/187
CPC分类号： H01S5/18383 , B82Y20/00 , H01L33/08 , H01L33/105 , H01S5/18311 , H01S5/18358 , H01S5/3095 , H01S5/34
摘要： A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6) being formed in the semiconductor body.
摘要翻译：具有包括半导体本体（2）的发射方向的表面发射半导体部件（1）。半导体本体包括多个适于产生辐射的有源区（4a，4b），并且以相互隔开的方式布置，在半导体本体中形成频率选择元件（6）。

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