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    • 71. 发明申请
    • Large-capacity magnetic memory using carbon nano-tube
    • 使用碳纳米管的大容量磁记忆体
    • US20060092542A1
    • 2006-05-04
    • US10516009
    • 2003-05-01
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • G11B5/02
    • G11C11/16B82Y10/00G11C13/025G11C2213/81H01L27/222H01L51/0048H01L51/0052Y10S977/724Y10S977/865
    • Disclosed is a high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
    • 公开了一种高容量磁存储器,其能够以纯电动随机存取方式以高速度根据垂直磁记录系统向/从磁记录膜读取磁记录。 在磁存储器中,写入磁场产生装置62和写入字线43相对于垂直磁记录膜50设置,并且读/写位线导体41,磁阻效应元件20和 读取字引线导体42依次层叠在与垂直磁记录膜50相对的探针基板上。 由含有软磁性材料的碳纳米管构成的磁性探头30相对于磁阻效应元件20以静止方式设置,并与读/写位线导体电连接。 在写入操作期间,在写入磁场下在磁探针的边缘和磁记录膜之间的微间隙G中产生微放电,以允许写入电流流过微间隙G,从而 加热磁记录膜的微区,使其通过其居里点,从而在记录磁场的方向上磁化,从而在其中形成磁记录。 在读取操作期间,磁记录根据磁阻效应元件的电流变化通过磁探头读出。
    • 73. 发明授权
    • Insert chip of oil-drilling tricone bit, manufacturing method thereof and oil-drilling tricone bit
    • 石油钻井钻头钻头,其制造方法和钻井三角钻头
    • US06719074B2
    • 2004-04-13
    • US10105012
    • 2002-03-20
    • Keiichi TsudaNobuyuki MoriHideki Moriguchi
    • Keiichi TsudaNobuyuki MoriHideki Moriguchi
    • E21B1052
    • E21B10/5735E21B10/52
    • An insert chip of an oil-drilling tricone bit includes an insert-chip substrate made of a cemented carbide of a first composition, and further includes a cemented carbide coating layer constituted of at least two stacked coating layers made of a cemented carbide of a composition different from the first composition. The cemented carbide coating layer covers the whole of a cutting edge of the insert-chip substrate. The coating layers each have a thickness, at a tip portion of the cutting edge, in a range from 0.1 mm to 2.5 mm, and the total thickness of the cemented carbide coating layer is in a range from 1 mm to 5 mm. The coating layers include an outermost cemented carbide layer and at least one intermediate coating layer in addition to the outermost cemented carbide layer, and the outermost cemented carbide layer has a hardness higher than that of the at least one intermediate coating layer and of the insert-chip substrate.
    • 油钻三角钻头的镶片包括由第一组合物的硬质合金制成的镶嵌芯片基片,并且还包括由至少两层由涂层组成的硬质合金制成的堆叠涂层构成的硬质合金涂层 不同于第一个组合。 硬质合金涂层覆盖了插入芯片基板的整个切割边缘。 各涂层在切削刃的前端部的厚度为0.1mm〜2.5mm的范围,硬质合金涂层的总厚度为1mm〜5mm。 除了最外面的硬质合金层之外,涂层还包括最外面的硬质合金层和至少一个中间涂层,并且最外面的硬质合金层的硬度高于至少一个中间涂层的硬度, 芯片基板。
    • 74. 发明授权
    • Wire-bonded semiconductor device
    • 线接半导体器件
    • US6005293A
    • 1999-12-21
    • US903434
    • 1997-07-30
    • Nobuyuki Mori
    • Nobuyuki Mori
    • H01L21/60H01L23/495H01L23/50H01L23/49
    • H01L24/06H01L23/49541H01L23/49558H01L24/48H01L24/49H01L2224/04042H01L2224/05554H01L2224/06153H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/484H01L2224/48599H01L2224/4899H01L2224/49171H01L2224/49433H01L2224/85148H01L24/45H01L2924/01004H01L2924/01033H01L2924/01079H01L2924/01082H01L2924/181
    • The present invention provides a wire-bonding structure of a semiconductor device comprising short and long bonding-wires. The short bonding-wires are provided for electrical connections between outer-positioned electrode bonding pads of the semiconductor device and inner-positioned inner lead bonding pads of longer inner leads. The long bonding-wires are provided for electrical connections between inner-positioned electrode bonding pads of the semiconductor device and outer-positioned inner lead bonding pads of shorter inner leads so that the short bonding-wires and the long bonding-wires area alternately aligned. The short bonding-wires rise to a first top level from the outer-positioned electrode bonding pads and slope down gradually from the first top level onto the inner-positioned inner lead bonding pads. The long bonding-wires rise to a second top level higher than the first level from the inner-positioned electrode bonding pads and slope down gradually from the second top level onto the outer-positioned inner lead bonding pads, whereby the long bonding-wires are kept in higher level than and differ in three-dimensional position from the short bonding-wires.
    • 本发明提供一种包括短和长接合线的半导体器件的引线接合结构。 短接合线设置用于半导体器件的外部定位电极接合焊盘和较长内部引线的内部定位的内部引线接合焊盘之间的电连接。 长接合线被设置用于半导体器件的内部定位电极接合焊盘和较短内部引线的外部定位的内部引线接合焊盘之间的电连接,使得短接合线和长接合线区域交替对准。 短接合线从外部定位的电极接合焊盘上升到第一顶层,并从第一顶层逐渐向下倾斜到内部定位的内引线接合焊盘上。 长接合线从内部定位的电极接合焊盘上升到高于第一级的第二顶级,并从第二顶层逐渐向下倾斜到外部定位的内部引线接合焊盘上,由此长的接合线是 保持在比短接合线更高的三维位置并且与三维位置不同。
    • 75. 发明授权
    • Air conditioner
    • 冷气机
    • US5888133A
    • 1999-03-30
    • US865180
    • 1997-05-29
    • Nobuyuki MoriYoshimi Kawai
    • Nobuyuki MoriYoshimi Kawai
    • F24F13/06F24F13/14F24F13/20F24F13/075
    • F24F13/06F24F1/0011F24F13/1426F24F2001/0048
    • In an air conditioner, at least one up-down wind direction board rotates in an up-down direction around almost horizontal rotation axis within an air outlet, and a plurality of lateral wind direction boards rotating laterally are provided around rotation axes as the center which are almost orthogonal to the rotation axis of said up-down wind direction board. Also a diffuser constituting a part of the air outlet is provided rotationally around an almost horizontal rotation axis as the center at the lower portion of the air outlet. A motor for driving the up-down wind direction board is provided at the side of one side wall portion of the air outlet. The up-down wind direction board is set by said motor to any arbitrary angle of tilt between the initial stop position closing said air outlet and maximum open position almost vertically downward. When the said up-down wind direction board is in a range from the position of a particular angle of tilt to said maximum open position between said up-down wind direction board and said diffuser, a drive force transmitting device provided is capable of transmitting the movement of said up-down wind direction board to said diffuser thereby permitting the driving of both the up-down wind direction board and diffuser by a single motor.
    • 在空调机中,至少一个上下风向板在空气出口内围绕大致水平旋转轴线的上下方向旋转,并且以旋转轴为中心设置有横向旋转的多个侧向风向板 几乎与所述上下风向板的旋转轴正交。 另外,构成空气出口的一部分的扩散器围绕作为空气出口下部的中心的几乎水平的旋转轴线旋转地设置。 用于驱动上下风向板的马达设置在出风口的一个侧壁部分的侧面。 上下风向板由所述电动机设定在关闭所述空气出口的初始停止位置和几乎垂直向下的最大打开位置之间的任意任意倾斜角度。 当所述上下风向板处于从所述上下风向板和所述扩散器之间的特定倾斜角度至所述最大打开位置的位置的范围内时,所提供的驱动力传递装置能够将 所述上下风向板到所述扩散器的运动,从而允许单个电动机驱动上下风向板和扩散器。
    • 78. 发明授权
    • Method of and apparatus for casting crystalline silicon ingot by
electron bean melting
    • 通过电子豆熔化铸造晶体硅锭的方法和装置
    • US5454424A
    • 1995-10-03
    • US107704
    • 1993-08-18
    • Nobuyuki MoriMasafumi Maeda
    • Nobuyuki MoriMasafumi Maeda
    • B22D11/11C30B11/00B22D11/00
    • C30B29/06B22D11/11C30B11/003
    • This invention aims at casting a large silicon crystal grain-containing ingot (14) by melting a silicon material (20) by scanning the same with an electron beam, and gradually cooling molten silicon (5) thus obtained. A method of casting a crystalline silicon ingot by electron beam melting, involves of the steps of melting a silicon material (20) by scanning the same with an electron beam, cooling the outer lower surface of molten silicon (5) thus produced while increasing the temperature of the molten silicon (5) suitably so as to generate crystals thereof, and gradually precipitating a crystalline silicon ingot (14) by the weight of itself in accordance with the generation of the crystals. An apparatus is provided for casting crystalline silicon ingot by electron beam melting, in which silicon material supply means (2, 3) are provided at one side of a cold hearth (1), one side portion of a crucible (8, 8a) being joined to the upper portion of the other side of the cold hearth (1) via a groove (7), electron guns (16 a, 16), a cooling means (10, 10a) being attached to the wall of the crucible (8, 8a), retaining means (15, 15a) for crystalline silicon ingot (14) being provided at the lower side of the crucible (8, 8a) so that the retaining means for the crystalline silicon ingot (14) can be vertically moved or both vertically and rotationally moved. The crystalline silicon ingot is lifted up at some point at a very slow speed so as to remove some part of the molten silicon which has a high concentration of impurities.
    • PCT No.PCT / JP92 / 01646 Sec。 371日期:1993年8月18日 102(e)日期1993年8月18日PCT提交1992年12月17日PCT公布。 公开号WO93 / 12272 日本6月24日,1993年。本发明旨在通过用电子束扫描硅材料(20)来熔化大量含硅晶粒的锭(14),并逐渐冷却由此获得的熔融硅(5) 。 通过电子束熔化铸造晶体硅锭的方法涉及通过用电子束扫描硅材料(20)的步骤,冷却由此产生的熔融硅(5)的外部下表面,同时增加 熔融硅(5)的温度适当地产生晶体,并且随着晶体的产生而使结晶硅锭(14)自身重量逐渐沉淀。 提供了一种用于通过电子束熔化铸造晶体硅锭的装置,其中硅材料供给装置(2,3)设置在冷炉床(1)的一侧,坩埚(8,8a)的一个侧部分为 通过凹槽(7),电子枪(16a,16),连接到坩埚(8)的壁上的冷却装置(10,10a)连接到冷床(1)的另一侧的上部, ,8a)中,用于晶体硅锭(14)的保持装置(15,15a)设置在坩埚(8,8a)的下侧,使得用于晶体硅锭(14)的保持装置可以垂直移动或 垂直和旋转移动。 晶体硅锭以非常慢的速度在某个点被提升,以便去除一些具有高浓度杂质的熔融硅。