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    • 71. 发明专利
    • OPTICAL TRANSMISSION LINE
    • JP2000341215A
    • 2000-12-08
    • JP15164799
    • 1999-05-31
    • NIPPON TELEGRAPH & TELEPHONE
    • YONENAGA KAZUSHIGEHIRANO AKIRAKUWABARA SHOICHIROMIYAMOTO YUTAKATOBA HIROSHI
    • G02B6/00H04B10/2507H04B10/2513H04B10/02H04B10/18
    • PROBLEM TO BE SOLVED: To suppress variation in wavelength dispersion with ambient temperature through simple constitution and to reduce deterioration in transmission characteristics by constituting a transmission line by providing in series optical fibers which have positive and negative variations in wavelength dispersion value with the ambient temperature in a transmission signal band. SOLUTION: An optical fiber cable 1 constituting each linear repeating section is so set that the mean wavelength dispersion value of each linear repeating section is always within dispersion tolerance in an ambient temperature variation range by connecting in series an optical fiber A which increases in the wavelength dispersed value corresponding to an arbitrary wavelength in the transmission signal band with the ambient temperature and an optical fiber B which decreases, i.e., two kinds of optical fibers A and B having positive and negative temperature differentiation coefficients of wavelength dispersed values. Consequently, the temperature variation of the mean wavelength dispersed values in each linear section can be suppressed below a variation quantity affecting deterioration of a transmission signal and a high-speed large-capacity optical transmission system of simple constitution can be structured without using a wavelength dispersion control mechanism.
    • 80. 发明专利
    • BROAD BAND DC AMPLIFIER
    • JPH036907A
    • 1991-01-14
    • JP14140589
    • 1989-06-02
    • NIPPON TELEGRAPH & TELEPHONE
    • MIYAMOTO YUTAKAMIYAGAWA YUZOHAGIMOTO KAZUO
    • H03F1/48H03F3/345H03F3/347
    • PURPOSE:To reduce the signal loss due to a diode substantially in the vicinity of the upper limit of the frequency band of an amplifier and to expand the frequency band width by connecting a small capacitance capacitor to the diode acting like a level shift circuit inserted in the path of an output signal. CONSTITUTION:The amplifier consists of a 1st amplifier circuit comprising a field effect transistor(TR) Q1 whose gate connects to an input terminal I, whose source connects to a common potential, and whose drain acts like an output electrode, and a 2nd amplifier circuit comprising a field effect TR Q2 whose gate is connected directly to an output electrode of the 1st amplifier circuit and connecting to the common level via a source level shift circuit, and the level shift circuit includes a diode D connecting forward to a DC bias level. A small capacitance capacitor C connects in parallel with the diode D. The capacitance of the capacitor C is selected to be equal to or less than the impedance of the diode D at a frequency near the upper limit of the amplification band of the 1st and 2nd amplifier circuits.