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71. 发明授权

US07495252B2 Organic thin film transistor, method of fabricating the same, and flat panel display having the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，其制造方法以及具有有机薄膜晶体管的平板显示器
公开(公告)号：US07495252B2
公开(公告)日：2009-02-24
申请号：US11436531
申请日：2006-05-19
申请人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
发明人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L27/3274 , H01L27/283 , H01L51/0017 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
摘要翻译：一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案，所述分离图案适于限定半导体层的沟道区。

72. 发明申请

US20080182356A1 Thin film transistor, method of manufacturing the same, and flat panel display using the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的平板显示器
公开(公告)号：US20080182356A1
公开(公告)日：2008-07-31
申请号：US12078171
申请日：2008-03-27
申请人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
发明人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/0516
摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.
摘要翻译：薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米颗粒和固化树脂。薄膜晶体管的导电层可以具有精确的图案。薄膜晶体管可以通过低成本，低温工艺制造。

73. 发明申请

US20080157071A1 THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY INCLUDING THE SAME 有权
标题翻译：薄膜晶体管和平板显示器包括它们
公开(公告)号：US20080157071A1
公开(公告)日：2008-07-03
申请号：US12047654
申请日：2008-03-13
申请人： Taek AHN , Min-Chul Suh , Jin-Saong Park , Seok-Jong Lee , Jung-Han Shin
发明人： Taek AHN , Min-Chul Suh , Jin-Saong Park , Seok-Jong Lee , Jung-Han Shin
IPC分类号： H01L51/30
CPC分类号： H01L51/0533 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L51/0545
摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要翻译：薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

74. 发明授权

US07381984B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07381984B2
公开(公告)日：2008-06-03
申请号：US11280761
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L21/336 , H01L51/30
CPC分类号： H01L51/0545 , H01L51/002
摘要： Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that are insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an electron withdrawing layer composed of a Lewis acid compound formed between the source and drain electrodes and the organic semiconductor layer. Charges can easily accumulate so that a channel doping effect occurs in the semiconductor layer, thus preventing the formation of an energy barrier and increasing the number of carriers that are injected into a channel. As a result, a TFT having a low contact resistance, an large number of injected carriers, and good charge mobility can be obtained. A flat panel display including the TFT is reliable and has low power consumption.
摘要翻译：提供一种薄膜晶体管和包括该薄膜晶体管的有机电致发光显示器。有机电致发光显示器包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及由在源极和漏极之间形成的路易斯酸化合物和有机半导体层构成的吸电子层。可以容易地积累电荷，使得在半导体层中发生沟道掺杂效应，从而防止形成能量势垒并增加注入到沟道中的载流子的数量。结果，可以获得具有低接触电阻，大量注入载流子和良好的电荷迁移率的TFT。包括TFT的平板显示器是可靠的并且具有低功耗。

75. 发明授权

US07348593B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07348593B2
公开(公告)日：2008-03-25
申请号：US11193474
申请日：2005-08-01
申请人： Jae-Bon Koo , Min-Chul Suh
发明人： Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L51/00
CPC分类号： H01L21/02118 , H01L21/31691 , H01L51/0021 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0053 , H01L51/0097 , H01L51/0516 , H01L51/0545
摘要： An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, an adhesive layer formed on the gate insulating layer, source/drain electrodes formed on the adhesive layer, and a semiconductor layer formed on the source/drain electrodes and on the adhesive layer. The gate insulating layer and the semiconductor layer are organic, the adhesive layer providing adhesion between the source/drain electrodes and the gate insulating film while preventing gate leakage current while also improving contact resistance.
摘要翻译：一种具有粘合剂层的有机薄膜晶体管（OTFT）及其制造方法。 OTFT包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层和基板的剩余的暴露部分，形成在栅极绝缘层上的粘合层，形成在粘合剂层上的源极/漏极，以及在源/漏电极和粘合剂层上形成的半导体层。栅极绝缘层和半导体层是有机的，粘合剂层在防止栅极漏电流同时也提高接触电阻的同时提供源/漏电极和栅极绝缘膜之间的粘附。

76. 发明申请

US20080012014A1 Thin film transistor, method of preparing the same, and flat panel display device including the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制备方法以及包括薄膜晶体管的平板显示装置
公开(公告)号：US20080012014A1
公开(公告)日：2008-01-17
申请号：US11819966
申请日：2007-06-29
申请人： Jin-Seong Park , Min-Chul Suh
发明人： Jin-Seong Park , Min-Chul Suh
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0533 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor (TFT) has reduced contact resistance between an organic semiconductor layer and source and drain electrodes. In the TFT, organic semiconductor crystals can be grown satisfactorily so as to improve electrical properties of the TFT. A method of preparing the same and a flat panel display device including the TFT are disclosed.
摘要翻译：薄膜晶体管（TFT）具有降低有机半导体层与源极和漏极之间的接触电阻。在TFT中，可以令人满意地生长有机半导体晶体，以改善TFT的电性能。公开了一种其制备方法和包括TFT的平板显示装置。

77. 发明申请

US20070111371A1 Organic thin film transistor and method of fabricating the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20070111371A1
公开(公告)日：2007-05-17
申请号：US11595568
申请日：2006-11-10
申请人： Taek Ahn , Min-Chul Suh
发明人： Taek Ahn , Min-Chul Suh
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L51/0005 , H01L51/0021 , H01L51/0097
摘要： An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.
摘要翻译：提供有机薄膜晶体管（OTFT）及其制造方法，其中有机层和金属互连形成为具有一定的线宽和形状，从而防止器件特性的劣化。该方法包括提供衬底，在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成源电极和漏电极，以及在源极和漏极上形成半导体层。栅电极通过喷墨印刷法形成，并通过激光烧蚀。

78. 发明申请

US20070090352A1 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US20070090352A1
公开(公告)日：2007-04-26
申请号：US11582534
申请日：2006-10-18
申请人： Taek Ahn , Min-Chul Suh , Jin-Seong Park , Seok-Jong Lee , Jung-Han Shin
发明人： Taek Ahn , Min-Chul Suh , Jin-Seong Park , Seok-Jong Lee , Jung-Han Shin
IPC分类号： H01L29/08
CPC分类号： H01L51/0533 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L51/0545
摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要翻译：薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

79. 发明申请

US20060270122A1 Organic TFT, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：有机TFT，其制造方法和具有该有机TFT的平板显示装置
公开(公告)号：US20060270122A1
公开(公告)日：2006-11-30
申请号：US11435849
申请日：2006-05-18
申请人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
发明人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L51/105 , H01L27/3274 , H01L51/0021 , H01L51/0541
摘要： An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.
摘要翻译：有机薄膜晶体管（TFT），制造方法和包括有机TFT的显示器。在TFT中，通过在缓冲膜中的沟槽中形成源电极和漏电极来减小或消除衬底与源电极和漏电极之间的阶差，不会发生沟道区的断开。制造有机TFT的方法包括在基板上形成缓冲膜，通过蚀刻缓冲膜形成在缓冲膜中彼此隔开一定距离的凹形单元，在缓冲膜上形成电极层，形成源极和漏极在凹面单元内通过使用光刻工艺蚀刻电极层，在源极和漏极以及缓冲膜上形成半导体层，在半导体层上形成栅极绝缘膜，并在栅极绝缘膜上形成栅电极。

80. 发明申请

US20060237789A1 Thin film transistor (TFT) and flat panel display including the TFT 有权
公开(公告)号：US20060237789A1
公开(公告)日：2006-10-26
申请号：US11403011
申请日：2006-04-13
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L27/12
CPC分类号： H01L51/0545 , H01L27/1214 , H01L27/283 , H01L29/78651 , H01L29/78681 , H01L51/0017
摘要： A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode.

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