专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US09068936B2 Graphene sensor 有权
公开(公告)号：US09068936B2
公开(公告)日：2015-06-30
申请号：US13605107
申请日：2012-09-06
申请人： Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Ning Su
发明人： Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Ning Su
IPC分类号： H01L29/786 , H01L21/336 , G01N27/414 , H01L29/423 , H01L29/49 , H01L29/66
CPC分类号： G01N27/4145 , G01N27/4146 , H01L29/1606 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/78684 , H01L51/0048
摘要： A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

72. 发明授权

US09059006B2 Replacement-gate-compatible programmable electrical antifuse 有权
标题翻译：替换门兼容可编程电气反熔丝
公开(公告)号：US09059006B2
公开(公告)日：2015-06-16
申请号：US13523120
申请日：2012-06-14
申请人： Satya N. Chakravarti , Dechao Guo , Chuck T. Le , Byoung W. Min , Thekkemadathil V. Rajeevakumar , Keith Kwong Hon Wong
发明人： Satya N. Chakravarti , Dechao Guo , Chuck T. Le , Byoung W. Min , Thekkemadathil V. Rajeevakumar , Keith Kwong Hon Wong
IPC分类号： G01R27/08 , H01L23/52 , H01L29/10 , H01L27/06 , H01L23/525 , H01L27/112 , H01L29/66 , H01L29/49 , H01L29/78
CPC分类号： H01L27/0617 , H01L23/5252 , H01L27/112 , H01L27/11206 , H01L29/4966 , H01L29/66545 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state).
摘要翻译：在栅极级介电层平坦化之后，去除虚拟结构以形成凹陷。第一导电材料层和无定形金属氧化物沉积到凹陷区域中。第二导电材料层填充凹部。在平坦化之后，在填充的凹陷区域内形成电反熔丝，其包括第一导电材料部分，非晶金属氧化物部分和第二导电材料部分。为了编程电反熔丝，电流在一对导电触点中的两个端子之间通过，以将非晶金属氧化物部分转变成具有较低电阻的结晶化金属氧化物部分。感测电路确定金属氧化物部分是非晶态（高电阻状态）还是结晶态（低电阻状态）。

73. 发明授权

US08927432B2 Continuously scalable width and height semiconductor fins 有权
标题翻译：连续可调的宽度和高度半导体鳍片
公开(公告)号：US08927432B2
公开(公告)日：2015-01-06
申请号：US13523048
申请日：2012-06-14
申请人： Dechao Guo , Yang Liu , Chengwen Pei , Yue Tan
发明人： Dechao Guo , Yang Liu , Chengwen Pei , Yue Tan
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L27/1211 , H01L21/845
摘要： Arbitrarily and continuously scalable on-currents can be provided for fin field effect transistors by providing two independent variables for physical dimensions for semiconductor fins that are employed for the fin field effect transistors. A recessed region is formed on a semiconductor layer over a buried insulator layer. A dielectric cap layer is formed over the semiconductor layer. Disposable mandrel structures are formed over the dielectric cap layer and spacer structures are formed around the disposable mandrel structures. Selected spacer structures can be structurally damaged during a masked ion implantation. An etch is employed to remove structurally damaged spacer structures at a greater etch rate than undamaged spacer structures. After removal of the disposable mandrel structures, the semiconductor layer is patterned into a plurality of semiconductor fins having different heights and/or different width. Fin field effect transistors having different widths and/or heights can be subsequently formed.
摘要翻译：通过为鳍式场效应晶体管所采用的半导体鳍片的物理尺寸提供两个独立的变量，可以为鳍式场效应晶体管提供任意和连续的可变电流。在掩埋绝缘体层上的半导体层上形成凹陷区域。在半导体层上形成电介质盖层。在电介质盖层上形成一次性心轴结构，并且围绕一次性心轴结构形成间隔结构。在掩蔽离子注入期间，选择的间隔结构可以在结构上受损。使用蚀刻以比未损坏的间隔物结构更大的蚀刻速率去除结构损坏的间隔物结构。在去除一次性心轴结构之后，将半导体层图案化成具有不同高度和/或不同宽度的多个半导体翅片。随后可以形成具有不同宽度和/或高度的鳍场效应晶体管。

74. 发明授权

US08895371B2 Transistor employing vertically stacked self-aligned carbon nanotubes 有权
标题翻译：晶体管采用垂直堆叠的自对准碳纳米管
公开(公告)号：US08895371B2
公开(公告)日：2014-11-25
申请号：US13605238
申请日：2012-09-06
申请人： Qing Cao , Dechao Guo , Shu-Jen Han , Yu Lu , Keith Kwong Hon Wong
发明人： Qing Cao , Dechao Guo , Shu-Jen Han , Yu Lu , Keith Kwong Hon Wong
IPC分类号： H01L21/335 , H01L51/05 , H01L29/775 , H01L29/66 , H01L51/00 , H01L29/12 , B82Y10/00 , B82Y30/00 , H01L29/78
CPC分类号： H01L51/057 , B82Y10/00 , B82Y30/00 , H01L29/125 , H01L29/66439 , H01L29/775 , H01L29/7827 , H01L51/0045 , H01L51/0048 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.
摘要翻译：形成包括具有第一等电点的第一等电点材料层和具有小于第一等电点的第二等电点的第二等电子材料层的垂直交替堆叠的鳍结构。第一和第二等电点材料层在具有第一和第二等电点之间的pH的溶液中相反地充电。通过阴离子表面活性剂将负电荷赋予碳纳米管。静电引力使得碳纳米管选择性地附着在第一等电点材料层的表面上。碳纳米管沿翅片结构的水平长度方向自对准地附接到第一等电点材料层。可以形成晶体管，其采用多个垂直排列的水平碳纳米管作为沟道。

75. 发明授权

US08859316B2 Schottky junction si nanowire field-effect bio-sensor/molecule detector 有权
标题翻译：肖特基结si纳米线场效应生物传感器/分子检测器
公开(公告)号：US08859316B2
公开(公告)日：2014-10-14
申请号：US12825527
申请日：2010-06-29
申请人： Dechao Guo , Christian Lavoie , Christine Ouyang Qiqing , Yanning Sun , Zhen Zhang
发明人： Dechao Guo , Christian Lavoie , Christine Ouyang Qiqing , Yanning Sun , Zhen Zhang
IPC分类号： H01L21/00 , H01L29/06 , G01N27/414
CPC分类号： G01N27/4145 , G01N27/4146 , H01L29/0673
摘要： A Schottky junction silicon nanowire field-effect biosensor/molecule detector with a nanowire thickness of 10 nanometer or less and an aligned source/drain workfunction for increased sensitivity. The nanowire channel is coated with a surface treatment to which a molecule of interest absorbs, which modulates the conductivity of the channel between the Schottky junctions sufficiently to qualitatively and quantitatively measure the presence and amount of the molecule.
摘要翻译：肖特基结的硅纳米线场效应生物传感器/分子检测器，纳米线厚度为10纳米或更小，并具有对准的源极/漏极功能，以提高灵敏度。纳米线通道涂覆有目标分子吸收的表面处理，其可以充分调节肖特基结之间的通道的电导率以定性和定量地测量分子的存在和量。

76. 发明授权

US08729637B2 Work function adjustment by carbon implant in semiconductor devices including gate structure 有权
标题翻译：通过碳植入在包括栅极结构的半导体器件中进行功能调整
公开(公告)号：US08729637B2
公开(公告)日：2014-05-20
申请号：US13253268
申请日：2011-10-05
申请人： Yue Liang , Dechao Guo , William K. Henson , Shreesh Narasimha , Yanfeng Wang
发明人： Yue Liang , Dechao Guo , William K. Henson , Shreesh Narasimha , Yanfeng Wang
IPC分类号： H01L21/70 , H01L21/20 , H01L21/00
CPC分类号： H01L27/092 , H01L21/26506 , H01L21/28088 , H01L21/28176 , H01L21/28194 , H01L21/823857 , H01L29/1054 , H01L29/517
摘要： A device including a p-type semiconductor device and an n-type semiconductor device on a semiconductor substrate. The n-type semiconductor device includes a gate structure having a high-k gate dielectric. A carbon dopant in a concentration ranging from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 is present at an interface between the high-k gate dielectric of the gate structure for the n-type semiconductor device and the semiconductor substrate. Methods of forming the aforementioned device are also disclosed.
摘要翻译：一种在半导体衬底上包括p型半导体器件和n型半导体器件的器件。 n型半导体器件包括具有高k栅极电介质的栅极结构。在n型半导体器件的栅极结构的高k栅极电介质和半导体衬底之间的界面处存在浓度范围为1×1016原子/ cm3至1×1021原子/ cm3的碳掺杂剂。还公开了形成上述装置的方法。

77. 发明授权

US08605499B2 Resonance nanoelectromechanical systems 有权
标题翻译：共振纳米机电系统
公开(公告)号：US08605499B2
公开(公告)日：2013-12-10
申请号：US13092247
申请日：2011-04-22
申请人： Leland Chang , Michael A. Guillorn , Dechao Guo , Fei Liu , Keith Kwong Hon Wong
发明人： Leland Chang , Michael A. Guillorn , Dechao Guo , Fei Liu , Keith Kwong Hon Wong
IPC分类号： G11C11/50
CPC分类号： H03H9/2457 , G11C11/404 , G11C23/00 , H03H2009/02314
摘要： Systems and methods for operating a nanometer-scale cantilever beam with a gate electrode. An example system includes a drive circuit coupled to the gate electrode where a drive signal from the circuit may cause the beam to oscillate at or near the beam's resonance frequency. The drive signal includes an AC component, and may include a DC component as well. An alternative example system includes a nanometer-scale cantilever beam, where the beam oscillates to contact a plurality of drain regions.
摘要翻译：用栅电极操作纳米级悬臂梁的系统和方法。示例性系统包括耦合到栅电极的驱动电路，其中来自电路的驱动信号可以使光束在光束的共振频率处或其附近振荡。驱动信号包括AC分量，并且还可以包括DC分量。替代示例系统包括纳米级悬臂梁，其中光束振荡以接触多个漏极区域。

78. 发明授权

US08455862B2 Self-aligned contacts in carbon devices 有权
标题翻译：碳装置中的自对准触点
公开(公告)号：US08455862B2
公开(公告)日：2013-06-04
申请号：US13562827
申请日：2012-07-31
申请人： Josephine B. Chang , Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
发明人： Josephine B. Chang , Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
IPC分类号： H01L29/775
CPC分类号： H01L29/1606 , B82Y10/00 , H01L29/165 , H01L29/41733 , H01L29/41766 , H01L29/41775 , H01L29/66431 , H01L29/66742 , H01L29/7781 , H01L29/78 , H01L29/78684 , H01L51/0048
摘要： A semiconductor device includes a carbon layer disposed on a substrate, a gate stack disposed on a portion of the carbon layer, a first cavity defined by the carbon layer and the substrate, a second cavity defined by the carbon layer and the substrate, a source region including a first conductive contact disposed in the first cavity, a drain region including a second conductive contact disposed in the second cavity.
摘要翻译：半导体器件包括设置在基底上的碳层，设置在碳层的一部分上的栅极叠层，由碳层和衬底限定的第一腔，由碳层和衬底限定的第二腔，源区域，包括设置在第一腔中的第一导电触点，漏区，包括设置在第二腔中的第二导电触点。

79. 发明授权

US08420474B1 Controlling threshold voltage in carbon based field effect transistors 失效
公开(公告)号：US08420474B1
公开(公告)日：2013-04-16
申请号：US13348355
申请日：2012-01-11
申请人： Martin M. Frank , Dechao Guo , Shu-Jen Hen , Kuen-Ting Shiu
发明人： Martin M. Frank , Dechao Guo , Shu-Jen Hen , Kuen-Ting Shiu
IPC分类号： H01L21/8238
CPC分类号： H01L51/0048 , B82Y10/00 , H01L21/823807 , H01L21/823828 , H01L27/1203 , H01L29/413 , H01L51/0558
摘要： A field effect transistor fabrication method includes defining a gate structure on a substrate, depositing a dielectric layer on the gate structure, depositing a first metal layer on the dielectric layer, removing a portion of the first metal layer, depositing a second metal layer, annealing the first and second metal layers, and defining a carbon based device on the dielectric layer and the gate structure.

80. 发明申请

US20120329193A1 GRAPHENE SENSOR 审中-公开
标题翻译：石墨传感器
公开(公告)号：US20120329193A1
公开(公告)日：2012-12-27
申请号：US13605107
申请日：2012-09-06
申请人： Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Ning Su
发明人： Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Ning Su
IPC分类号： H01L21/336
CPC分类号： G01N27/4145 , G01N27/4146 , H01L29/1606 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/78684 , H01L51/0048
摘要： A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.
摘要翻译：一种用于形成传感器的方法，包括在衬底中形成通道，在通道中形成牺牲层，形成具有设置在衬底上的第一介电层的传感器，设置在第一电介质层上的石墨烯层，以及设置在第二电介质层在石墨烯层上，源区域，漏极区域和栅极区域，其中栅极区域设置在牺牲层上，从沟道去除牺牲层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式