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71. 发明授权

US06992834B2 Objective with birefringent lenses 失效
标题翻译：目标双折射镜片
公开(公告)号：US06992834B2
公开(公告)日：2006-01-31
申请号：US11071523
申请日：2005-03-02
申请人： Michael Totzeck , Vladimer Kamenov , Daniel Kraehmer , Wilhelm Ulrich
发明人： Michael Totzeck , Vladimer Kamenov , Daniel Kraehmer , Wilhelm Ulrich
IPC分类号： G02B21/02
CPC分类号： G02B1/08 , G02B1/02 , G02B5/3083 , G02B13/143 , G03F7/70241 , G03F7/705 , G03F7/70966
摘要： Objective (1, 601), in particular a projection objective for a microlithography projection apparatus, with first birefringent lenses (L108, L109, L129, L130) and with second birefringent lenses (L101–L107, L110–L128). The first lenses (L108, L109, L129, L130) are distinguished from the second lenses (L101–L107, L110–L128) by the lens material used or by the material orientation. After passing through the first lenses (L108, L109, L129, L130) and the second lenses (L101–L107, L110–L128), an outer aperture ray (5, 7) and a principal ray (9) are subject to optical path differences for two mutually orthogonal states of polarization. The difference between these optical path differences is smaller than 25% of the working wavelength. In at least one first lens (L129, L130), the aperture angle of the outer aperture ray (5, 7) is at least 70% of the largest aperture angle occurring for said aperture ray in all of the first lenses (L108, L109, L129, L130) and second lenses (L101–L107, L110–L128). This arrangement has the result that the first lenses (L108, L109, L129, L130) have a combined material volume of no more than 20% of the combined total material volume of the first lenses (L108, L109, L129, L130) and second lenses (L101–L107, L110–L128).
摘要翻译：目的（1，601），特别是具有第一双折射透镜（L108，L109，L129，L130）和第二双折射透镜（L101-L107，L110-L128）的微光刻投影装置的投影物镜。第一透镜（L108，L109，L129，L130）与所使用的透镜材料或材料取向与第二透镜（L101-L107，L110-L128）不同。在通过第一透镜（L108，L109，L129，L130）和第二透镜（L101-L107，L110-L128）之后，外光线（5,7）和主光线（9）经受光路两个相互正交的极化状态的差异。这些光程差之差小于工作波长的25％。在至少一个第一透镜（L129，L130）中，外光圈（5,7）的孔径角为所有第一透镜（L108，L109）中的所述孔径光线发生的最大孔径角的至少70％，L129，L130）和第二透镜（L101-L107，L110-L128）。这种结构的结果是，第一透镜（L108，L109，L129，L130）的组合材料体积不超过第一透镜（L108，L109，L129，L130）和第二透镜镜头（L101-L107，L110-L128）。

72. 发明授权

US08436982B2 Projection objective for microlithography 有权
标题翻译：微光刻的投影目标
公开(公告)号：US08436982B2
公开(公告)日：2013-05-07
申请号：US12723496
申请日：2010-03-12
申请人： Helmut Beierl , Heiko Feldmann , Jochen Hetzler , Michael Totzeck
发明人： Helmut Beierl , Heiko Feldmann , Jochen Hetzler , Michael Totzeck
IPC分类号： G03B27/54 , G03B27/52 , G03B27/42
CPC分类号： G03F7/70341 , G02B1/02 , G02B21/33 , G03F7/70941
摘要： A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.
摘要翻译：用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。光学组件包括靠近图像平面设置的至少一个光学终端元件。第一浸没液体设置在光学终端元件的图像取向表面上。第二浸没液体设置在光学终端元件的物体取向表面上。面向对象的表面包括用于成像光进入端子元件的第一表面部分，并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

73. 发明授权

US08294991B2 Interference systems for microlithgraphic projection exposure systems 有权
标题翻译：微光刻投影曝光系统的干涉系统
公开(公告)号：US08294991B2
公开(公告)日：2012-10-23
申请号：US12687299
申请日：2010-01-14
申请人： Ralf Mueller , Toralf Gruner , Michael Totzeck , Heiko Feldmann , Hans-Jochen Paul
发明人： Ralf Mueller , Toralf Gruner , Michael Totzeck , Heiko Feldmann , Hans-Jochen Paul
IPC分类号： G02B27/00
CPC分类号： G03F7/70308 , G02B5/205 , G02B5/283 , G02B26/001 , G02B26/0825 , G03F7/70191 , G03F7/70266 , G03F7/70566
摘要： An optical system of a microlithographic projection exposure apparatus permits comparatively flexible and fast influencing of the intensity distribution and/or the polarization state. The optical system includes at least one layer system that is at least one-side bounded by a lens or a mirror. The layer system is an interference layer system of several layers and has at least one liquid or gaseous layer portion with a maximum thickness of one micrometer (μm), and a manipulator for manipulation of the thickness profile of the layer portion.
摘要翻译：微光刻投影曝光装置的光学系统允许强度分布和/或偏振状态的相对灵活和快速的影响。光学系统包括至少一个由透镜或反射镜限定的一个层系统。层系统是几层的干涉层系统，并且具有至少一个最大厚度为1微米（μm）的液体或气体层部分，以及用于操纵层部分的厚度分布的操纵器。

74. 发明申请

US20100142042A1 MICROSCOPE AND MICROSCOPY METHOD FOR SPACE-RESOLVED MEASUREMENT OF A PREDETERMINED STRUCTURE, IN PARTICULAR A STRUCTURE OF A LITHOGRAPHIC MASK 有权
标题翻译：微观结构和微观方法用于预测结构的空间分辨率测量，特别是LITHOGRAPHIC MASK的结构
公开(公告)号：US20100142042A1
公开(公告)日：2010-06-10
申请号：US12517583
申请日：2007-11-20
申请人： Hans-Juergen Mann , Michael Totzeck , Norbert Kerwien
发明人： Hans-Juergen Mann , Michael Totzeck , Norbert Kerwien
IPC分类号： G02B21/06
CPC分类号： G03F7/70625 , G02B21/0092 , G02B21/06 , G02B21/16 , G02B27/28 , G02B27/283 , G03F1/0092 , G03F1/84 , G03F7/70616
摘要： A microscope is provided for space-resolved measurement of a predetermined structure (12), said microscope comprising a source of radiation (2), which emits electromagnetic radiation (3) of a predetermined wavelength, an optical system (13), which irradiates the electromagnetic radiation (3) onto the structure (12) to be measured and images the structure (12), irradiated with the electromagnetic radiation, onto a detector (9), wherein the optical system (13) has two eigen polarization conditions (Z1, Z2), and the apparatus includes a polarization module (4) by which a polarization condition can be set for the electromagnetic radiation (3) of the source of radiation (2), which condition includes only components of a known quantity which correspond to the eigen polarization conditions (Z1, Z2).
摘要翻译：提供了用于对预定结构（12）进行空间分辨测量的显微镜，所述显微镜包括发射预定波长的电磁辐射（3）的辐射源（2），光学系统（13），其照射将电磁辐射（3）放置在要测量的结构（12）上并将照射有电磁辐射的结构（12）成像到检测器（9）上，其中光学系统（13）具有两个特征极化条件（Z1， Z2），并且该装置包括偏振模块（4），通过该偏振模块可以为辐射源（2）的电磁辐射（3）设置偏振条件，该条件仅包括已知量的对应于特征极化条件（Z1，Z2）。

75. 发明申请

US20090213356A1 ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微型投影曝光装置照明系统
公开(公告)号：US20090213356A1
公开(公告)日：2009-08-27
申请号：US12390676
申请日：2009-02-23
申请人： Toralf Gruner , Michael Totzeck
发明人： Toralf Gruner , Michael Totzeck
IPC分类号： G03B27/72
CPC分类号： G03F7/70566 , B82Y10/00 , G03F7/70008 , G21K2201/061 , H05G2/00
摘要： An illumination system for a microlithographic projection exposure apparatus includes an EUV light source which generates an emission beam of linearly polarized EUV illumination light. An illumination optics guides the emission beam along an optical axis which causes an illumination field in a reticle plane to be illuminated by the emission beam. The illumination system also includes an illumination subunit of the illumination system. The illumination subunit includes at least the EUV light source and a polarization setting device for setting a defined polarization of the EUV emission beam of the illumination subunit.
摘要翻译：用于微光刻投影曝光装置的照明系统包括产生线偏极化EUV照明光的发射光束的EUV光源。照明光学器件沿着光轴引导发射光束，其使得光栅平面中的照明场被发射光束照射。照明系统还包括照明系统的照明子单元。照明子单元至少包括EUV光源和用于设定照明子单元的EUV发射光束的限定极化的偏振设置装置。

76. 发明申请

US20090040496A1 MICROLITHOGRAPHIC EXPOSURE METHOD AS WELL AS A PROJECTION EXPOSURE SYSTEM FOR CARRYING OUT THE METHOD 有权
标题翻译：作为实施方法的投影曝光系统的微观曝光方法
公开(公告)号：US20090040496A1
公开(公告)日：2009-02-12
申请号：US12177715
申请日：2008-07-22
申请人： Toralf GRUNER , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
发明人： Toralf GRUNER , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
IPC分类号： G03B27/72
CPC分类号： G03F7/70566 , G03F7/70108 , G03F7/70225 , G03F7/70308
摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要翻译：在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。可以在基于偏振光学测量数据的控制回路中进行极化处理。

77. 发明授权

US07408616B2 Microlithographic exposure method as well as a projection exposure system for carrying out the method 有权
标题翻译：微光刻曝光方法以及用于实施该方法的投影曝光系统
公开(公告)号：US07408616B2
公开(公告)日：2008-08-05
申请号：US10949396
申请日：2004-09-27
申请人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
发明人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
IPC分类号： G03B27/42
CPC分类号： G03F7/70566 , G03F7/70108 , G03F7/70225 , G03F7/70308
摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要翻译：在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。可以在基于偏振光学测量数据的控制回路中进行极化处理。

78. 发明授权

US07286245B2 Method and apparatus for determining the influencing of the state of polarization by an optical system; and an analyser 有权
标题翻译：用于确定光学系统对偏振状态的影响的方法和装置; 和分析仪
公开(公告)号：US07286245B2
公开(公告)日：2007-10-23
申请号：US10628431
申请日：2003-07-29
申请人： Ulrich Wegmann , Michael Hartl , Markus Mengel , Manfred Dahl , Helmut Haidner , Martin Schriever , Michael Totzeck
发明人： Ulrich Wegmann , Michael Hartl , Markus Mengel , Manfred Dahl , Helmut Haidner , Martin Schriever , Michael Totzeck
IPC分类号： G01B9/02
CPC分类号： G03F7/70566 , G01J4/04 , G01M11/0271 , G01M11/0285 , G02B27/0025 , G03F7/70591
摘要： A method and an apparatus for determining the influencing of the state of polarization of optical radiation by an optical system under test, wherein radiation with a defined entrance state of polarization is directed onto the optical system, the exit-side state of polarization is measured, and the influencing of the state of polarization is determined by the optical system with the aid of evaluation of the exit state of polarization with reference to the entrance state of polarization. An analyser arrangement which can be used for this purpose is also disclosed. The method and the apparatus are used, e.g., to determine the influencing of the state of polarization of optical radiation by an optical imaging system of prescribable aperture, the determination being performed in a pupil-resolved fashion.
摘要翻译：一种用于通过被测光学系统确定光辐射的偏振状态的影响的方法和装置，其中具有限定的入射极化状态的辐射被引导到光学系统上，测量出射侧的偏振态，并且通过参考偏振的入射状态来评估偏振的退出状态，由光学系统确定极化状态的影响。还公开了可用于此目的的分析装置。使用该方法和装置，例如通过具有规定孔径的光学成像系统来确定光学辐射的偏振状态的影响，该确定以瞳孔分辨的方式执行。

79. 发明申请

US20060007541A1 Imaging system for emulation of a high aperture scanning system 有权
标题翻译：用于高光圈扫描系统仿真的成像系统
公开(公告)号：US20060007541A1
公开(公告)日：2006-01-12
申请号：US10923551
申请日：2004-08-20
申请人： Michael Totzeck , Ulrich Stroessner , Joern Greif-Wuestenbecker
发明人： Michael Totzeck , Ulrich Stroessner , Joern Greif-Wuestenbecker
IPC分类号： G02B5/30
CPC分类号： G03F7/70566 , G02B21/002 , G02B27/286 , G03F7/70666
摘要： The present invention is directed to an optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The imaging system, according to the invention, for emulating high-aperture scanner systems comprises imaging optics, a detector and an evaluating unit, wherein at least one polarization-active optical element is arranged as desired in the imaging beam path for selection of different polarization components of the imaging beam, an optical element with intensity attenuation function can be introduced in the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing. With the proposed solution, it is possible in particular to examine lithography masks for defects in spite of increasingly smaller structures and increasingly higher image-side numerical apertures of the imaging systems by means of inspection microscopes with high magnifications. Realistic images of the stepper systems can be generated by emulating the occurring vector effects.
摘要翻译：本发明涉及一种用于检查显微镜的光学成像系统，通过该光学成像系统可以通过光学掩模来检查缺陷，特别是通过高光阑扫描器系统的仿真。根据本发明的用于模拟高光圈扫描器系统的成像系统包括成像光学器件，检测器和评估单元，其中至少一个偏振有源光学元件根据需要在成像光束路径中布置以选择不同的极化成像光束的成分，具有强度衰减功能的光学元件可以被引入到成像光束路径中，掩模和/或样品的图像由检测器接收以用于不同偏振的光束分量，并被传送到评估单元进行进一步处理。利用所提出的解决方案，可以通过借助于具有高放大率的检查显微镜，检查光刻掩模的缺陷，尽管结构越来越小，成像系统的图像侧数值孔径越来越高。可以通过仿真出现的矢量效应来生成步进系统的现实图像。

80. 发明申请

US20050200966A1 Objective with birefringent lenses 失效
标题翻译：目标双折射镜片
公开(公告)号：US20050200966A1
公开(公告)日：2005-09-15
申请号：US11071523
申请日：2005-03-02
申请人： Michael Totzeck , Vladimer Kamenov , Daniel Kraehmer , Wilhelm Ulrich
发明人： Michael Totzeck , Vladimer Kamenov , Daniel Kraehmer , Wilhelm Ulrich
IPC分类号： G02B1/02 , G02B5/30 , G02B13/14 , G02B13/18 , G03F7/20 , H01L21/027 , G02B3/00 , G02B9/00 , G02B15/14
CPC分类号： G02B1/08 , G02B1/02 , G02B5/3083 , G02B13/143 , G03F7/70241 , G03F7/705 , G03F7/70966
摘要： Objective (1, 601), in particular a projection objective for a microlithography projection apparatus, with first birefringent lenses (L108, L109, L129, L130) and with second birefringent lenses (L101-L107, L110-L128). The first lenses (L108, L109, L129, L130) are distinguished from the second lenses (L101-L107, L110-L128) by the lens material used or by the material orientation. After passing through the first lenses (L108, L109, L129, L130) and the second lenses (L101-L107, L110-L128), an outer aperture ray (5, 7) and a principal ray (9) are subject to optical path differences for two mutually orthogonal states of polarization. The difference between these optical path differences is smaller than 25% of the working wavelength. In at least one first lens (L129, L130), the aperture angle of the outer aperture ray (5, 7) is at least 70% of the largest aperture angle occurring for said aperture ray in all of the first lenses (L108, L109, L129, L130) and second lenses (L101-L107, L110-L128). This arrangement has the result that the first lenses (L108, L109, L129, L130) have a combined material volume of no more than 20% of the combined total material volume of the first lenses (L108, L109, L129, L130) and second lenses (L101-L107, L110-L128).
摘要翻译：目的（1，601），特别是具有第一双折射透镜（L 108，L 109，L 129，L 130）和第二双折射透镜（L 101 -L 107，L 110-110）的微光刻投影装置的投影物镜， L 128）。第一透镜（L 108，L 109，L 129，L 130）与所使用的透镜材料或材料取向与第二透镜（L 101 -L 107，L 110 -L 128）不同。在穿过第一透镜（L 108，L 109，L 129，L 130）和第二透镜（L 101 -L 107，L 110 -L 128）之后，外孔光线（5,7）和主光线（9）对于两个相互正交的极化状态经受光程差。这些光程差之差小于工作波长的25％。在至少一个第一透镜（L 129，L 130）中，外孔径光线（5,7）的孔径角度是所有第一透镜中的所述孔径光线发生的最大孔径角的至少70％（L 108，L 109，L 129，L 130）和第二透镜（L 101 -L 107，L 110 -L 128）。这种结构的结果是，第一透镜（L 108，L 109，L 129，L 130）的组合材料体积不超过第一透镜（L 108，L 109，L 130， L 129，L 130）和第二透镜（L 101 -L 107，L 110 -L 128）。

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