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71. 发明申请

US20060216914A1 Method of growing non-polar a-plane gallium nitride 有权
标题翻译：生长非极性a面平面氮化镓的方法
公开(公告)号：US20060216914A1
公开(公告)日：2006-09-28
申请号：US11368184
申请日：2006-03-03
申请人： Soo Lee , Rak Choi , Naoi Yoshiki , Sakai Shiro , Masayoshi Koike
发明人： Soo Lee , Rak Choi , Naoi Yoshiki , Sakai Shiro , Masayoshi Koike
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.
摘要翻译：本发明提供一种生长非极性a-平面氮化镓的方法。在该方法中，首先，准备r面基板。然后，在基板上沉积低温氮化物基成核层。最后，在成核层上生长非极性a面平面氮化镓。在生长非极性a面平面氮化镓的过程中，以约190〜390微摩尔/分钟的流量供给镓源，将氮源的流量设定为V / III比约为770〜 2310。

72. 发明申请

US20060118821A1 Light-emitting semiconductor device using group III nitrogen compound 失效
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US20060118821A1
公开(公告)日：2006-06-08
申请号：US11328079
申请日：2006-01-10
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L31/109
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译：发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3）（n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中，具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga）在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +层（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。镍电极（7,8）分别连接到p层（6）和n + +层（4）。一个凹槽（9）使电极（7,8）电绝缘。选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

73. 发明申请

US20050224834A1 LIght-emitting semiconductor device using group III nitrogen compound 有权
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US20050224834A1
公开(公告)日：2005-10-13
申请号：US11143664
申请日：2005-06-03
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L33/00 , H01L33/32 , H01L33/38 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译：发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3）（n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中，具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga）在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。镍电极（7,8）分别连接到p层（6）和n + +层（4）。一个凹槽（9）使电极（7,8）电绝缘。选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

74. 发明申请

US20050221526A1 Process for producing nitride semiconductor light-emitting device 失效
标题翻译：氮化物半导体发光元件的制造方法
公开(公告)号：US20050221526A1
公开(公告)日：2005-10-06
申请号：US10893924
申请日：2004-07-20
申请人： Dong Cho , Masayoshi Koike , Hun Hahm
发明人： Dong Cho , Masayoshi Koike , Hun Hahm
IPC分类号： H01L21/00 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/3205 , H01L29/22 , H01L29/24 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A process for producing a nitride semiconductor light-emitting device includes the steps of preparing a substrate, growing a p-type nitride semiconductor layer on the substrate by the MOCVD process using hydrazine-based gas as a nitrogen precursor and N2 gas as a carrier gas, forming an active layer on the p-type nitride semiconductor layer, forming an n-type conductive nitride semiconductor layer on the active layer, and forming p- and n-electrodes in electrical connection with the p- and n-type nitride semiconductors, respectively.
摘要翻译：制造氮化物半导体发光器件的方法包括以下步骤：制备衬底，通过使用肼系气体作为氮前驱体的MOCVD法在衬底上生长p型氮化物半导体层，气体作为载气，在p型氮化物半导体层上形成有源层，在有源层上形成n型导电氮化物半导体层，形成与p电极电连接的p型和n型电极和n型氮化物半导体。

75. 发明授权

US06946788B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US06946788B2
公开(公告)日：2005-09-20
申请号：US10156502
申请日：2002-05-29
申请人： Yoshinobu Suehiro , Masayoshi Koike , Hideaki Kato
发明人： Yoshinobu Suehiro , Masayoshi Koike , Hideaki Kato
IPC分类号： H01L33/08 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01J1/62
CPC分类号： H01L33/20 , H01L33/08 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38
摘要： A light-emitting element has a light-emitting layer and at lease one light-extracting portion. At least a partial part of the light-extracting portion is formed into a concave or convex surface for enhancing the efficiency of extracting light. Another light-emitting element has a light-emitting layer and a concave or convex surface for reflecting light emitted from the light-emitting layer toward one or more other surfaces of the light-emitting element through an inside of the light-emitting element.
摘要翻译：发光元件具有发光层和至少一个光提取部分。光提取部分的至少一部分形成为凹面或凸面，以提高提取光的效率。另一个发光元件具有发光层和用于通过发光元件的内部将从发光层发射的光朝向发光元件的一个或多个其它表面反射的发光层和凹凸表面。

76. 发明申请

US20050032344A1 Group III nitride compound semiconductor laser 有权
标题翻译： III族氮化物化合物半导体激光器
公开(公告)号：US20050032344A1
公开(公告)日：2005-02-10
申请号：US10924999
申请日：2004-08-25
申请人： Takashi Hatano , Sho Iwayama , Masayoshi Koike
发明人： Takashi Hatano , Sho Iwayama , Masayoshi Koike
IPC分类号： H01S5/20 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/343 , H01L21/3205
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/209 , H01S5/22 , H01S5/34333 , H01S2301/18
摘要： A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.
摘要翻译：半导体激光器包括蓝宝石衬底，AlN缓冲层，Si掺杂GaN n层，Si掺杂的Al 0.1 Ga 0.9 N n包层，Si掺杂的GaN n引导层，具有多个量子阱的有源层（MQW）结构，其中GaN阻挡层62的厚度约为35，Ga0.95In0.05N阱层61的厚度约为35，Mg掺杂的GaN引导层，Mg掺杂的Al0.25Ga0 在其上依次形成了.75N p层，Mg掺杂的Al 0.1 Ga 0.9 N p包覆层和掺杂Mg的GaN p接触层。与脊状激光腔部A接触的脊状空穴注入部B形成为与Ni电极的宽度w相同的宽度。因为p层具有较大的铝组成，所以蚀刻速率变小，并且可以防止在该蚀刻工艺中损坏p导向层。

77. 发明授权

US06680957B1 Group III nitride compound semiconductor laser 失效
标题翻译： III族氮化物化合物半导体激光器
公开(公告)号：US06680957B1
公开(公告)日：2004-01-20
申请号：US09515493
申请日：2000-02-29
申请人： Masayoshi Koike , Shiro Yamasaki , Yuta Tezen , Seiji Nagai , Akira Kojima , Toshio Hiramatsu
发明人： Masayoshi Koike , Shiro Yamasaki , Yuta Tezen , Seiji Nagai , Akira Kojima , Toshio Hiramatsu
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34333
摘要： A semiconductor laser 101 comprises a sapphire substrate 1, an AlN buffer layer 2, Si-doped GaN n-layer 3, Si-doped Al0.1Ga0.9N n-cladding layer 4, Si-doped GaN n-guide layer 5, an active layer 6 having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer 7, Mg-doped Al0.1Ga0.9N p-cladding layer 8, and Mg-doped GaN p-contact layer 9 are formed successively thereon. A ridged hole injection part B which contacts to a ridged resonator part A is formed to have the same width as the width w of an Ni electrode 10. Holes transmitted from the Ni electrode 10 are injected to the active layer 6 with high current density, and electric current threshold for laser oscillation can be decreased. Electric current threshold can be improved more effectively by forming also the p-guide layer 7 to have the same width as the width w of the Ni electrode 10.
摘要翻译：半导体激光器101包括蓝宝石衬底1，AlN缓冲层2，掺杂Si的GaN n层3，掺杂Si的Al 0.1 Ga 0.9 N n包层4，掺杂Si的GaN n引导层5，具有多个量子阱（MQW）结构的有源层6，其中厚度约为35的GaN阻挡层62和约35厚度的Ga0.95In0.05N阱层61交替层叠，掺杂Mg的GaN p引导层如图7所示，依次形成Mg掺杂的Al 0.1 Ga 0.9 N p包覆层8和Mg掺杂的GaN p接触层9。与脊状谐振器部件A接触的脊状空穴注入部分B形成为具有与Ni电极10的宽度w相同的宽度。从Ni电极10传输的孔以高电流密度注入到有源层6中，可以降低激光振荡的电流阈值。也可以通过将p导向层7形成为具有与Ni电极10的宽度w相同的宽度来更有效地提高电流阈值。

78. 发明授权

US06631149B1 Laser diode using group III nitride group compound semiconductor 失效
标题翻译：使用III族氮化物族化合物半导体的激光二极管
公开(公告)号：US06631149B1
公开(公告)日：2003-10-07
申请号：US09688206
申请日：2000-10-16
申请人： Yuta Tezen , Masayoshi Koike
发明人： Yuta Tezen , Masayoshi Koike
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01L33/32 , H01S5/32 , H01S5/3211 , H01S5/34 , H01S5/3406 , H01S5/34333
摘要： A guide layer is formed to have a superlattice structure comprising five pairs of layers of AlGaN and InN, each having a thickness of about 10 nm. The guide layer has a total thickness of about 0.1 &mgr;m. The guide layer so structured has a reduced elastic constant such that the guide layer acts as a stress relieving layer.
摘要翻译：引导层形成为具有包括5对AlGaN和InN的超晶格结构，每层具有约10nm的厚度。引导层的总厚度约为0.1μm。如此构造的引导层具有降低的弹性常数，使得引导层用作应力消除层。

79. 发明授权

US5953581A Methods for manufacturing group III nitride compound semiconductor laser diodes 失效
标题翻译：制造III族氮化物半导体激光二极管的方法
公开(公告)号：US5953581A
公开(公告)日：1999-09-14
申请号：US840895
申请日：1997-04-17
申请人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike
发明人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike
IPC分类号： H01L33/10 , H01L33/12 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/10 , H01S5/323 , H01S5/343 , H01L21/66
CPC分类号： H01S5/32308 , H01S5/0203
摘要： As a method for manufacturing a laser diode using a group III nitride compound semiconductor, independent dry etching process for forming electrodes and mirror facets are adopted. A portion of an upper semiconductor layer is etched for forming a window. An electrode for a lower semiconductor layer is formed through the window. After electrodes are formed, then, etching is carried out for forming mirror facets of laser cavity. This method realizes high oscillation, because the method enhances parallel and vertical degrees of the mirror facets. Further, cleanness of the mirror facets are improved, because they are formed after the electrodes are formed. The method further lowers resistivity of lower semiconductor layer, because its thickness can be controlled easily without etching excessively. As a result, luminous efficiency is improved.
摘要翻译：作为使用III族氮化物化合物半导体制造激光二极管的方法，采用用于形成电极和镜面的独立的干蚀刻工艺。上部半导体层的一部分被蚀刻以形成窗口。通过窗口形成下半导体层用电极。在形成电极之后，进行蚀刻以形成激光腔的镜面。该方法实现了高振荡，因为该方法增强了镜面的平行和垂直度。此外，改善了镜面的清洁度，因为它们在形成电极之后形成。该方法进一步降低下半导体层的电阻率，因为其厚度可以容易地控制，而不会过度蚀刻。结果，发光效率提高。

80. 发明授权

US5700713A Light emitting semiconductor device using group III nitride compound and method of producing the same 失效
标题翻译：使用III族氮化物化合物的发光半导体器件及其制造方法
公开(公告)号：US5700713A
公开(公告)日：1997-12-23
申请号：US406415
申请日：1995-03-20
申请人： Shiro Yamazaki , Naoki Shibata , Masayoshi Koike
发明人： Shiro Yamazaki , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L33/12 , H01L33/14 , H01L33/32 , H01L33/40 , H01L33/44 , H01L21/20
CPC分类号： H01L33/32 , H01L33/325 , Y10S148/099 , Y10S438/93
摘要： A light-emitting semiconductor device a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Mg doped ((Al.sub.x1 Ga.sub.1-x1).sub.y2 In.sub.1-y2 N n.sup.+ -layer (5), and a Mg doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) has about a 2.0 .mu.m thickness and a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) has about a 2.0 .mu.m thickness and a 2.times.10.sup.18 /cm.sup.3 electron concentration. A double i-layer structure includes the emission layer (5) and the i-layer (6). The emission layer (5) has about a 0.5 .mu.m thickness, and the i-layer (6) has about a 0.5 .mu.m thickness. Parts of the emission layer (5) and the i-layer (6) are p-type regions (50, 60). Both of the p-type regions exhibit p-type conduction with a 2.times.10.sup.17 /cm.sup.3 hole concentration. The emission layer (5) and the i-layer (6), except for the p-type region, exhibit semi-insulative characteristics.
摘要翻译：发光半导体器件蓝宝石衬底（1），AlN缓冲层（2），掺杂高（n型）的硅（Si）掺杂的GaN n +层（3），掺杂Si（Alx2Ga1 -x2）n + +（4），Zn（Zn）和Mg掺杂的（（Alx1Ga1-x1）y2In1-y2Nn +层（5），Mg掺杂（Alx2Ga1-x2）y2In1-y2N n +层（6），AlN层（2）的厚度为500，GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 2，i层结构包括发光层（5）和i层（6），发射层（5）具有约0.5μm的厚度，i层（6）的厚度为0.5μm左右，发光层（5）和i层（6）的一部分为p型区域（50,60）两个p型区域都具有2x1017 / cm3空穴浓度的p型导电，发射层（5）和i层（6），e 对于p型区域，表示半绝缘特性。

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