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71. 发明授权

US06413695B1 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06413695B1
公开(公告)日：2002-07-02
申请号：US09572973
申请日：2000-05-18
申请人： Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Koji Hasegawa , Mutsuo Nakashima , Jun Hatakeyama
发明人： Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Koji Hasegawa , Mutsuo Nakashima , Jun Hatakeyama
IPC分类号： G03F7004
CPC分类号： C07C69/753 , C07C69/013 , C07C69/608 , C07C69/732 , C07C69/76 , C07C2602/42 , C07C2603/68 , C07C2603/74 , G03F7/0045 , G03F7/038 , G03F7/039
摘要： A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.
摘要翻译：包含作为溶解调节剂的外型2-烷基双环[2.2.1]庚-2-基酯化合物的抗蚀剂组合物具有高灵敏度，分辨率，耐蚀刻性和储存稳定性，并且适用于电子束或深层的微图案，紫外线。

72. 发明授权

US06403822B2 Ester compounds having alicyclic structure and method for preparing same 有权
标题翻译：具有脂环结构的酯化合物及其制备方法
公开(公告)号：US06403822B2
公开(公告)日：2002-06-11
申请号：US09842005
申请日：2001-04-26
申请人： Takeru Watanabe , Koji Hasegawa , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
发明人： Takeru Watanabe , Koji Hasegawa , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
IPC分类号： C07C6974
CPC分类号： G03F7/0397 , C07C69/732 , C07C2601/08 , C07C2601/14 , C07C2602/42 , C07C2603/68 , C07C2603/74 , C07C2603/86 , G03F7/0395
摘要： Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. R1 is H or C1-6 alkyl, R2 is an acid labile group, k is 0 or 1, and m is an integer from 0 to 5.
摘要翻译：式（1）的酯化合物可用作单体以形成适用于微图案光刻的化学放大抗蚀剂组合物的基础树脂.R1为H或C1-6烷基，R2为酸不稳定基团，k为0或1，和 m为0〜5的整数。

73. 发明授权

US06337415B1 Process for preparing tetrakis (trimethylsily) silane and tris (trimethysilyl) silane 有权
标题翻译：制备四（三甲基甲硅烷基）硅烷和三（三甲基甲硅烷基）硅烷的方法
公开(公告)号：US06337415B1
公开(公告)日：2002-01-08
申请号：US09704557
申请日：2000-11-03
申请人： Ayumu Kiyomori , Tohru Kubota , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe
发明人： Ayumu Kiyomori , Tohru Kubota , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe
IPC分类号： C07F704
CPC分类号： C07F7/0803
摘要： Tetrakis(trimethylsilyl)silane is prepared by reacting tetrachlorosilane with chlorotrimethylsilane in the presence of lithium metal, adding a compound with active proton(s) to the reaction mixture for treating the residual lithium metal therewith while maintaining the mixture neutral or acidic, and separating tetrakis(trimethylsilyl)silane from the organic layer. The residual lithium metal is treated in a safe and simple manner. Reaction of the tetrakis(trimethylsilyl)silane with an alkyl lithium or alkali metal alkoxide, followed by acid hydrolysis, affords tris(trimethylsilyl)silane. The desired compounds are prepared in high yields and on an industrial scale.
摘要翻译：通过四氯硅烷与氯代三甲基硅烷在锂金属的存在下反应制备四（三甲基甲硅烷基）硅烷，在反应混合物中加入具有活性质子的化合物，用于处理残留的锂金属同时保持混合物中性或酸性，并分离四（三甲基甲硅烷基）硅烷。剩余的锂金属以安全和简单的方式进行处理。四（三甲基甲硅烷基）硅烷与烷基锂或碱金属醇盐的反应，然后进行酸水解，得到三（三甲基甲硅烷基）硅烷。所需化合物以高产率和工业规模制备。

74. 发明授权

US6147249A Ester compounds, polymers, resist composition and patterning process 有权
公开(公告)号：US6147249A
公开(公告)日：2000-11-14
申请号：US307767
申请日：1999-05-10
申请人： Takeru Watanabe , Takeshi Kinsho , Tsunehiro Nishi , Mutsuo Nakashima , Koji Hasegawa , Jun Hatakeyama
发明人： Takeru Watanabe , Takeshi Kinsho , Tsunehiro Nishi , Mutsuo Nakashima , Koji Hasegawa , Jun Hatakeyama
IPC分类号： C07C69/03 , C07C69/00 , C07C69/753 , C08F32/08 , G03F7/004 , G03F7/039 , C07C69/74
CPC分类号： G03F7/039 , C07C69/753 , C08F32/08 , G03F7/0045 , C07C2101/08 , C07C2101/10 , C07C2101/14 , C07C2101/16 , C07C2102/42 , C07C2103/86 , Y02P20/55 , Y10S430/106
摘要： A novel ester compound having an alkylcycloalkyl or alkylcycloalkenyl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.

75. 发明授权

US09034661B2 Method for producing molecule immobilizing substrate, and molecule immobilizing substrate 有权
标题翻译：制备分子固定底物的方法和分子固定底物
公开(公告)号：US09034661B2
公开(公告)日：2015-05-19
申请号：US12709020
申请日：2010-02-19
申请人： Wataru Kusaki , Toshinobu Ishihara , Takeshi Kinsho , Takeru Watanabe
发明人： Wataru Kusaki , Toshinobu Ishihara , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G01N33/544 , G01N33/543 , G01N33/53 , C08L83/04 , C08L83/06
CPC分类号： G01N33/54393 , C08L83/04 , C08L83/06 , G01N33/543 , G01N33/54353
摘要： There is disclosed a method for producing a molecule immobilizing substrate, comprising at least the steps of: forming, on a substrate, a monomolecular film including hydroxyl groups, cyano groups, or oxiranyl groups, which are oriented toward an outmost surface of the monomolecular film; and chemically modifying the hydroxyl groups, cyano groups, or oxiranyl groups of the monomolecular film to transform them into carboxyl groups, to thereby form, on the substrate, the monomolecular film including the carboxyl groups, which are oriented toward an outmost surface of the monomolecular film. There can be provided: a method for producing a molecule immobilizing substrate which is free of occurrence of an immobilized-molecule peeling problem in the case of conducting an assay by immobilizing molecules on the substrate.
摘要翻译：公开了一种分子固定基板的制造方法，至少包括以下步骤：在基板上形成包含羟基，氰基或环氧乙烷基的单分子膜，该单分子膜朝向单分子膜的最外表面 ; 并对单分子膜的羟基，氰基或环氧乙烷基进行化学改性，将其转化为羧基，从而在基材上形成包含羧基的单分子膜，该单分子膜朝向单分子膜的最外表面电影。可以提供：在通过将分子固定在基材上进行测定的情况下，制备不存在固定化分子剥离问题的分子固定化基质的方法。

76. 发明授权

US08835092B2 Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative 有权
标题翻译：抗蚀剂下层膜组合物，形成抗蚀剂下层膜的工艺，图案化工艺和富勒烯衍生物
公开(公告)号：US08835092B2
公开(公告)日：2014-09-16
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/095 , G03F7/11 , G03F7/40 , G03F7/09 , C07C69/753 , C08L61/06
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译：公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。

77. 发明授权

US08592133B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08592133B2
公开(公告)日：2013-11-26
申请号：US13427621
申请日：2012-03-22
申请人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
发明人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/20 , G03F7/028 , G03F7/40 , G03F1/08
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译：本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些）并且不具有与氮原子共价键合的氢原子作为碱性中心。

78. 发明授权

US08313890B2 Antireflective coating composition, antireflective coating, and patterning process 有权
标题翻译：抗反射涂料组合物，抗反射涂层和图案化工艺
公开(公告)号：US08313890B2
公开(公告)日：2012-11-20
申请号：US12636546
申请日：2009-12-11
申请人： Seiichiro Tachibana , Kazumi Noda , Takeru Watanabe , Jun Hatakeyama , Takeshi Kinsho
发明人： Seiichiro Tachibana , Kazumi Noda , Takeru Watanabe , Jun Hatakeyama , Takeshi Kinsho
IPC分类号： G03F7/11 , G03F7/40 , C08L31/02
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译：包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。

79. 发明授权

US07638256B2 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process 有权
标题翻译：含氟环状结构的硅化合物和有机硅树脂，使用其的抗蚀剂组合物和图案化工艺
公开(公告)号：US07638256B2
公开(公告)日：2009-12-29
申请号：US11480944
申请日：2006-07-06
申请人： Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Yoshitaka Hamada
发明人： Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Yoshitaka Hamada
IPC分类号： G03F7/039 , G03F7/038 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： C08G77/24 , C07D307/20 , C07D319/06 , G03F7/0045 , G03F7/0046 , G03F7/0757 , Y10S430/106 , Y10S430/108
摘要： Silicon compounds having fluorinated hemiacetal structure are provided. Silicone resins having the same structure have an appropriate acidity to enable formation of a finer pattern by minimizing the pattern collapse by swelling, exhibit improved resistance to the etching used in the pattern transfer to an organic film, and are thus suited for use in resist compositions for the bilayer process.
摘要翻译：提供具有氟化半缩醛结构的硅化合物。具有相同结构的硅氧烷树脂具有适当的酸度，以通过使图案由于膨胀膨胀而最小化形成更细的图案，显示出改进的抗转移到有机膜图案中的蚀刻性，因此适用于抗蚀剂组合物用于双层工艺。

80. 发明申请

US20090274984A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：含羧酸的化合物，聚合物，耐腐蚀组合物和图案处理
公开(公告)号：US20090274984A1
公开(公告)日：2009-11-05
申请号：US12434365
申请日：2009-05-01
申请人： Satoshi SHINACHI , Tsunehiro Nishi , Koji Hasegawa , Takeshi Kinsho , Seiichiro Tachibana , Takeru Watanabe
发明人： Satoshi SHINACHI , Tsunehiro Nishi , Koji Hasegawa , Takeshi Kinsho , Seiichiro Tachibana , Takeru Watanabe
IPC分类号： G03F7/20 , C07D307/77 , C08F24/00
CPC分类号： G03F7/0397 , C07D307/77 , C08F220/28 , G03F7/0045 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： Carboxyl-containing lactone compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic ring, W is CH2, O or S, k1 is an integer of 0 to 4, and k2 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation ≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.
摘要翻译：具有式（1）的含羧基的内酯化合物是新的，其中R 1是H，F，甲基或三氟甲基，R 2和R 3是H或一价烃基，或者R 2和R 3可以一起形成脂族环，W是CH 2，O或 S，k1为0〜4的整数，k2为0或1.它们可用作单体以产生对辐射<= 500nm透明的聚合物。包含作为基础树脂的聚合物的辐射敏感性抗蚀剂组合物表现出优异的性能，包括分辨率，LER，图案密度依赖性和曝光余量。

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