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71. 发明授权

US07387678B2 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same 有权
标题翻译： GaN衬底及其制造方法，氮化物半导体器件及其制造方法
公开(公告)号：US07387678B2
公开(公告)日：2008-06-17
申请号：US10875512
申请日：2004-06-25
申请人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
发明人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
IPC分类号： C30B29/38
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007
摘要： A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0
摘要翻译： GaN衬底包括在衬底上外延生长的GaN单晶衬底，Al x x Ga 1-x N中间层（0

72. 发明授权

US08829545B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08829545B2
公开(公告)日：2014-09-09
申请号：US12119015
申请日：2008-05-12
申请人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
发明人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/32
摘要： A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0≦X
摘要翻译： III族氮化物半导体发光器件包括n型氮化镓基半导体层，第一p型AlXGa1-XN（0＆lt; NlE; X <1）层，包含InGaN层的有源层，和第三p型AlZGa1-XN层（0＆amp; nlE; Z＆lt; EL; Y＆lt; NlE; X <1）和与第三p型AlZGa1相接触的p电极的第二p型AlYGa1-YN（0＆nlE; Y＆ -ZN层。有源层设置在n型氮化镓基半导体层和第一p型AlXGa1-XN层之间。在第一p型AlXGa1-XN层上设置第二p型AlYGa1-YN（0＆nlE; Y＆nlE; X <1）层。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第一p型AlXGa1-XN层的p型掺杂剂浓度。在第二p型AlYGa1-YN层上设置第三p型AlZGa1-ZN层（0＆nlE; Z＆lt; Y; Y＆nlE; X <1）。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第三p型AlZGa1-ZN层的p型掺杂剂浓度。

73. 发明申请

US20080315243A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20080315243A1
公开(公告)日：2008-12-25
申请号：US12119015
申请日：2008-05-12
申请人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
发明人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/32
摘要： A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0≦X
摘要翻译： III族氮化物半导体发光器件包括n型氮化镓基半导体层，第一p型AlXGa1-XN（0 <= X <1）层，包含InGaN层的有源层，第二p型型AlYGa1-YN（0 <= Y <= X <1）层，第三p型AlZGa1-XN层（0 <= Z <= Y <= X <1）第三个p型AlZGa1-ZN层。有源层设置在n型氮化镓基半导体层和第一p型AlXGa1-XN层之间。在第一p型AlXGa1-XN层上设置第二p型AlYGa1-YN（0 <= Y <= X <1）层。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第一p型AlXGa1-XN层的p型掺杂剂浓度。在第二p型AlYGa1-YN层上设置第三p型AlZGa1-ZN层（0 <= Z <= Y <= X <1）。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第三p型AlZGa1-ZN层的p型掺杂剂浓度。

74. 发明授权

US08227898B2 Ohmic contact on a p-type principal surface tilting with respect to the c-plane 有权
标题翻译：在相对于c面倾斜的p型主表面上的欧姆接触
公开(公告)号：US08227898B2
公开(公告)日：2012-07-24
申请号：US12836222
申请日：2010-07-14
申请人： Shinji Tokuyama , Masahiro Adachi , Takashi Kyono , Yoshihiro Saito
发明人： Shinji Tokuyama , Masahiro Adachi , Takashi Kyono , Yoshihiro Saito
IPC分类号： H01L29/20 , H01L29/04
CPC分类号： H01L33/40 , H01L33/16 , H01L33/32
摘要： A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface 13a of a p-type semiconductor region 13 extends along a plane tilting from a c-axis (axis ) of hexagonal group-III nitride. A metal layer 15 is deposited on the principal surface 13a of the p-type semiconductor region 13. The metal layer 15 and the p-type semiconductor region 13 are separated by an interface 17 such that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surface 13a comprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interface 17 avoids an increase in amount of oxide after the formation of the metal layer 15 for the electrode.
摘要翻译：半导体器件在从c面倾斜的p型主表面上具有令人满意的欧姆接触。 p型半导体区域13的主表面13a沿着从六方晶III族氮化物的c轴（轴<0001>）倾斜的平面延伸。金属层15沉积在p型半导体区域13的主表面13a上。金属层15和p型半导体区域13被界面17分离，使得金属层用作非合金电极。由于六方晶III族氮化物含有镓作为III族元素，所以与六方晶III族氮化物的c面相比，包含六方晶III族氮化物的主表面13a更易于氧化。界面17避免了形成用于电极的金属层15之后的氧化物的量的增加。

75. 发明授权

US08872156B2 Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device 有权
标题翻译： III族氮化物半导体发光器件和制造III族氮化物半导体发光器件的方法
公开(公告)号：US08872156B2
公开(公告)日：2014-10-28
申请号：US13453718
申请日：2012-04-23
申请人： Takumi Yonemura , Takashi Kyono , Yohei Enya
发明人： Takumi Yonemura , Takashi Kyono , Yohei Enya
IPC分类号： H01L29/16 , H01L29/20 , H01L29/872 , H01L29/78 , H01L31/0352 , H01S5/343 , H01L21/02 , H01S5/32 , H01S5/30 , H01S5/042 , H01L33/32 , H01S5/00 , H01S5/20 , H01L33/16
CPC分类号： H01S5/3202 , B82Y20/00 , H01L21/0254 , H01L21/02554 , H01L21/02579 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/0035 , H01S5/0421 , H01S5/2009 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/34333
摘要： A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)−E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts.
摘要翻译： III族氮化物半导体发光器件在衬底的主表面上包括n型覆层和p型覆层，其中c轴相对于衬底的主表面的法线倾斜。 p型覆层被掺杂有提供受主电平的p型掺杂剂，p型覆层包含提供施主电位的n型杂质。在n型包覆层和p型包覆层之间配置有源层。 p型掺杂剂的浓度大于n型杂质的浓度。 p型包覆层的光致发光光谱中的带边发光峰值的能量E（BAND）与供体 - 荧光体的能量E（DAP）之间的差（E（BAND）-E（DAP）光致发光光谱中的受主对发射峰值不大于0.42电子伏特。

76. 发明申请

US20080308906A1 GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE 失效
标题翻译： GaN衬底，具有外延层的衬底，半导体器件以及制造GaN衬底的方法
公开(公告)号：US20080308906A1
公开(公告)日：2008-12-18
申请号：US12137038
申请日：2008-06-11
申请人： Hideki OSADA , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
发明人： Hideki OSADA , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
IPC分类号： H01L29/20 , H01L21/20 , C01B21/06
CPC分类号： H01L29/2003 , C30B25/02 , C30B25/183 , C30B29/406 , H01L29/045 , Y10S438/945 , Y10S438/973
摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.
摘要翻译：具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，工作寿命等改善的特性的发光元件的半导体器件，具有外延提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。平面方向相对于主表面的法线矢量在偏角方向上倾斜。

77. 发明授权

US07816238B2 GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate 失效
标题翻译： GaN衬底，具有外延层的衬底，半导体器件和制造GaN衬底的方法
公开(公告)号：US07816238B2
公开(公告)日：2010-10-19
申请号：US12137038
申请日：2008-06-11
申请人： Hideki Osada , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
发明人： Hideki Osada , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B25/183 , C30B29/406 , H01L29/045 , Y10S438/945 , Y10S438/973
摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.
摘要翻译：具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，寿命等的改善的特性的发光元件的半导体器件，具有外延的衬底提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。平面方向相对于主表面的法线矢量在偏角方向上倾斜。

78. 发明申请

US20090212277A1 GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING GROUP-III NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译： III族氮化物发光器件及其制造基于III族氮化物的半导体发光器件的方法
公开(公告)号：US20090212277A1
公开(公告)日：2009-08-27
申请号：US12390036
申请日：2009-02-20
申请人： Katsushi Akita , Hitoshi Kasai , Takashi Kyono , Kensaku Motoki
发明人： Katsushi Akita , Hitoshi Kasai , Takashi Kyono , Kensaku Motoki
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/16 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X
摘要翻译：提供III族氮化物发光器件。具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。量子阱结构形成为具有410nm以上的发光峰值波长。阱层的厚度为4nm以上，10nm以下。阱层由InXGa1-XN（0.15 <= X <1，其中X是应变组成）组成。氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。该范围内的基面是半极性平面。

79. 发明申请

US20080308815A1 GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method 审中-公开
标题翻译： GaN衬底，具有外延层的衬底，半导体器件和GaN衬底制造方法
公开(公告)号：US20080308815A1
公开(公告)日：2008-12-18
申请号：US12138441
申请日：2008-06-13
申请人： Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Katsushi Akita , Takashi Kyono , Yoshiki Miura
发明人： Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Katsushi Akita , Takashi Kyono , Yoshiki Miura
IPC分类号： H01L29/20 , B23B9/00 , H01L21/205
CPC分类号： C30B25/02 , C23C16/01 , C23C16/303 , C30B25/04 , C30B25/18 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/02395 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02639
摘要： Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions.
摘要翻译：提供可以制造增强发光效率的发光等半导体器件的GaN衬底，其中在GaN衬底主表面上形成外延层的外延衬底，半导体器件和制造方法 GaN衬底。 GaN衬底是具有相对于其法线向量的主表面的衬底，[0001]面取向在两个不同的偏轴方向上倾斜。

80. 发明授权

US07973322B2 Nitride semiconductor light emitting device and method for forming the same 有权
标题翻译：氮化物半导体发光器件及其形成方法
公开(公告)号：US07973322B2
公开(公告)日：2011-07-05
申请号：US12440643
申请日：2008-04-17
申请人： Katsushi Akita , Takashi Kyono , Keiji Ishibashi , Hitoshi Kasai
发明人： Katsushi Akita , Takashi Kyono , Keiji Ishibashi , Hitoshi Kasai
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.
摘要翻译：提供有源层17以发射具有在440至550nm范围内的发光波长的光。第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。六边形InXGa1-XN的a平面在预定轴Ax方向上对准。阱层的厚度在大于2.5nm至10nm的范围内。当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

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