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71. 发明专利

JPH07165066A SPACE MOVING SYSTEM DETECTING DEVICE 失效
公开(公告)号：JPH07165066A
公开(公告)日：1995-06-27
申请号：JP31852493
申请日：1993-12-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKESHITA HIROSHI , SUGIMOTO HIROSHI
IPC分类号： G21C17/013 , B61B13/06
摘要： PURPOSE:To provide a space moving system detecting device which can realize the reduction of an installing space, cost reduction, the simplification of installing work and the improvement of the stability of action by making rail structure simple and light, and effectively utilizing a space inside the rail, and decreasing the rattling and positional slippage of a truck. CONSTITUTION:A rail 11 having a reverse V-shaped section is provided, and a truck 15 is movably attached inside the rail 11 by an inner and an outer roller 13,12 arranged so as to sandwichedly hold both the two sides of the rail 11.

72. 发明专利

JPH06291360A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06291360A
公开(公告)日：1994-10-18
申请号：JP9507493
申请日：1993-03-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： OTSUKA KENICHI , IMAIZUMI MASAYUKI , GOTODA MITSUNOBU , ISHIHARA HAJIME , SUGIMOTO HIROSHI , MARUNO SHIGEMITSU , NOMURA YOSHITOKU
IPC分类号： H01L31/107
摘要： PURPOSE:To obtain high speed response and low noise operation in semiconductor devices, such as light receiving devices. CONSTITUTION:An avalanche multiplication part of a semiconductor device is specifies as a distorted superlattice structure where the first semiconductor layer 5 uses a constant identical to that of substrate crystal while a second semiconductor layer uses a lattice constant smaller than the substrate crystal 1. This construction makes it possible to change the allocation between a conduction band and a valence band of a differential forbidden band from an intrinsic value of the material and reduce differential energy 13 between the barrier and a well of the valence band as illustrated in a band energy diagram in FIGURE substantially to zero. This distorted superlattice structure makes it possible to create such a situation as electrons are overwhelmingly ionized compared with holes.

73. 发明专利

JPH06289339A OPTICAL SWITCH 失效
公开(公告)号：JPH06289339A
公开(公告)日：1994-10-18
申请号：JP9507893
申请日：1993-03-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： GOTODA MITSUNOBU , MARUNO SHIGEMITSU , NOMURA YOSHITOKU , ISHIHARA HAJIME , SUGIMOTO HIROSHI
IPC分类号： G02F3/02 , G02F1/015 , G02F1/313 , H01L31/14
摘要： PURPOSE:To provide the optical switch capable of changing the refractive index or transmittance in a crossing part at a high speed with a low voltage. CONSTITUTION:A multistrain quantum well structure 41 laminated with plural strain quantum well layers is formed in the crossing part 40 of the plural optical waveguides on a substrate 1. The strain quantum well layer 41 has a first semiconductor layer 42 which has the lattice constant equal to or slightly larger than the lattice constant of the substrate, second semiconductor layers 43 are formed on both surfaces of this first semiconductor layer 42 and have the lattice constant smaller than the lattice constant of the substrate and third semiconductor layers 8 which are formed on both surfaces of a laminate formed of the first and second semiconductor layers 42, 43 and have the lattice constant equal to the lattice constant of the substrate.

74. 发明专利

JPH06289208A WAVELENGTH FILTER AND ITS MANUFACTURE 失效
公开(公告)号：JPH06289208A
公开(公告)日：1994-10-18
申请号：JP9507593
申请日：1993-03-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , NOMURA YOSHITOKU , MARUNO SHIGEMITSU , OISHI TOSHIYUKI , GOTODA MITSUNOBU , ABE YUJI
IPC分类号： G02B5/18 , G02B5/28
摘要： PURPOSE:To perform wavelength control centering about plural pieces of wavelength remarkably different from each other and to obtain a wavelength variable range wider than the variable range of selected wavelength to infect a current by providing two waveguides with different angles to the periodic direction of a diffraction grating layer provided on a substrate. CONSTITUTION:Incident light on an optical waveguide layer 5 on a first optical waveguide 3 senses the change of refractive index of the period of the diffraction grating layer 2, and receives diffraction. Thereby, the first optical waveguide 3 functions as a wavelength filter which selects and emits wavelength in accordance with a period. While, since an angle 8 is formed between the direction of a second optical waveguide 4 and the periodic direction of the diffraction grating layer 2, the incident light on an optical waveguide layer 6 on the second optical waveguide 4 senses the change of refractive index longer by 1/COStheta than the period on the diffraction grating layer 2, and receives the diffraction. Therefore, the second optical waveguide 4 functions as the wavelength filter which selects and emits the wavelength in accordance with the period. In such a way, it is possible to transmit two different kinds of wavelength by using the diffraction grating layer 2 with one period.

75. 发明专利

JPH04362705A INTERFERENCE CHECK SYSTEM FOR ROBOT AND WORK 失效
公开(公告)号：JPH04362705A
公开(公告)日：1992-12-15
申请号：JP16504391
申请日：1991-06-10
申请人： DORYOKURO KAKUNENRYO , MITSUBISHI ELECTRIC CORP , TOKYO ELECTRIC POWER CO , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , CHUBU ELECTRIC POWER , HOKURIKU ELECTRIC POWER , KANSAI ELECTRIC POWER CO , CHUGOKU ELECTRIC POWER , SHIKOKU ELEC POWER , KYUSHU ELECTRIC POWER , JAPAN ATOMIC POWER
发明人： YASU TAKAMI , ISHIBASHI YUZO , MORI AKINOBU , SUGIMOTO HIROSHI
IPC分类号： B25J13/00 , B25J19/06 , G05B19/19 , G05B19/4063
摘要： PURPOSE:To attain an interference check system where the interference is previously checked in a relative shift state between a robot and a work in order to prevent the collision between them. CONSTITUTION:The surfaces of a robot and a work are covered and approximated by the polyhedrons. Then the shortest distance is calculated between the ridgeline of a polyhedron 41 covering the robot end the surface 42 of the polyhedron covering the work. Thus the interference is checked between the robot and the work. At the same time, it is decided whether the ridgeline of the polyhedron 41 is positioned or not on the entire surface in the moving direction of the robot. Then the interference is checked to only the ridges existing at the front side so that the processing data quantity is reduced. Thus the high speed and sure interference check is attained with high efficiency.

76. 发明专利

JPH03119779A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH03119779A
公开(公告)日：1991-05-22
申请号：JP25678389
申请日：1989-09-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , MATSUI TERUHITO , OTSUKA KENICHI , ABE YUJI , OISHI TOSHIYUKI
IPC分类号： H01S5/00
摘要： PURPOSE:To hold a self-converging function and to execute a high-output operation by a method wherein a surface light-emitting part is provided with the same light intensity distribution or light phase distribution as a diffraction-type lens radiating face and light radiated from the whole surface light-emitting part is converged. CONSTITUTION:When, in a DFB laser, an electric current is injected into an electrode 6, it is oscillated at an oscillation wavelength lambda corresponding to a period of a diffraction grating. While a surface light-emitting component radiated in a direction perpendicular to a substrate does not exist in a part of a primary diffraction grating 13, one part of a laser-oscillated beam is radiated in the direction perpendicular to the substrate by a diffraction effect. Consequently, when a boundary between the gratings 13 and 12 is formed at an identical phase point 10 and an antiphase point 9, the oscillated beam is radiated at the same light intensity distribution as transmitted light from the rear of a lens substrate 11 of a Fresnel zone plate provided with an opaque part 14. A radiated surface light-emitting component is converged on a line of a focal point 7 by the same effect as the Fresnel zone plate. Thereby, a self-converging function can be held and a high-output operation can be executed.

77. 发明专利

JPH02312291A MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPH02312291A
公开(公告)日：1990-12-27
申请号：JP13330689
申请日：1989-05-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUI TERUHITO , OTSUKA KENICHI , SUGIMOTO HIROSHI , ABE YUJI , OISHI TOSHIYUKI
IPC分类号： H01S5/00
摘要： PURPOSE:To improve a semiconductor laser of this design in dimensional accuracy and reproducibility by a method wherein a vertical plane used for the resonator mirror of a semiconductor laser and an inclined plane used for deflection are processed through a dry etching method using hydrocarbon gas. CONSTITUTION:An insulating film of silicon dioxide or silicon nitride is formed on the surface of a semiconductor laser crystal substrate 1, a window is provided to the film 2, and a groove 11 provided with vertical side faces 11a and 11b is formed on the surface of the substrate 1 through a reactive ion etching method using a mixed gas of hydrogen and methane or ethane as an etching gas and the film 2 as a mask. Then, the etching mask is removed, and side walls 6a and 6b provided with inclined planes are formed through a reactive etching method, using an insulating film 13 of silicon dioxide or silicon nitride provided with a window which covers the side wall 11a of the groove 11 but does not cover the other side wall 11b as a mask and hydrocarbon gas such as methane or ethane not mixed with hydrogen as an etching gas. As mentioned above, a semiconductor laser of this design is formed through a dry etching method, so that it is improved in dimensional accuracy and reproducibility.

78. 发明专利

JPH02257622A PROCESSING OF COMPOUND SEMICONDUCTOR MATERIAL 失效
公开(公告)号：JPH02257622A
公开(公告)日：1990-10-18
申请号：JP7925789
申请日：1989-03-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUI TERUHITO , SUGIMOTO HIROSHI , OTSUKA KENICHI , ABE YUJI , OISHI TOSHIYUKI
IPC分类号： H01L21/302 , H01L21/3065 , H01L27/15
摘要： PURPOSE:To obtain an etching sidewall which is inclined uniformly by a method wherein a hydrocarbon-based gas in sued as a reaction gas for an etching operation and a material whose etching speed is close to that of a semiconductor material, is used as an etching mask. CONSTITUTION:When a reactive ion etching operation is executed by using a hydrocarbon-based gas, e.g. methane, and by utilizing a silicon dioxide(SiO2) film 2 as an etching mask, the etching speed of an InP substrate 1 as a compound semiconductor is proportional to a flow rate of methane as an etching gas and the etching rate of the SiO2 film 2 is not changed very much. Accordingly, as the etching operation progresses, a film thickness of the etching mask 2 is reduced and also an etching operation which progresses from an edge to a transverse direction is caused; an edge of the etching mask is retreated. As a result, a shape of a sidewall of the InP substrate 1' is not vertical after the etching operation and can be inclined with reference to a face of the substrate 1. Thereby, it is possible to obtain an etching characteristic of a side face which is inclined uniformly.

79. 发明专利

JPH02115919A COORDINATE INPUT DEVICE 失效
公开(公告)号：JPH02115919A
公开(公告)日：1990-04-27
申请号：JP26818788
申请日：1988-10-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI
IPC分类号： G01B11/00 , G06F3/03 , G06F3/042
摘要： PURPOSE:To easily input the coordinates of a cylindrical plane, a spherical plane, and another arbitrary surface by sandwiching a photoconductive film and a film with a refractive index lower than that of the photoconductive film, and transmitting light through the photoconductive film. CONSTITUTION:The light 11 emitted from a light emitting element 9 arrives at a corresponding light receiving element 10 as performing total reflection on the inside of the photoconductive film 2 in a state where no coordinate is designated by a cursor 12. Therefore, a photoreceiving signal can be obtained from the light receiving element 10 in such state. Since the light 11 advances along a curve even when it is formed on a photoconductive sheet 1, an optical signal can be obtained from the light receiving element 10. Meanwhile, when the cursor 12 presses a point on the sheet 1, the position is recessed and deformed. The light 11 advancing through the photoconductive film 2 is made incident on a film 3 side, and is emitted to the outside. As a result, no photoreceiving signal can be obtained, and the position of the cursor 12 can be detected.

80. 发明专利

JPH01230280A LIGHT-SENSITIVE SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH01230280A
公开(公告)日：1989-09-13
申请号：JP5572388
申请日：1988-03-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： OTSUKA KENICHI , ABE YUJI , SUGIMOTO HIROSHI , OISHI TOSHIYUKI , MATSUI TERUHITO
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To enable producing a plurality of active waveguiding regions on the same base board easily, by not producing any thick waveguiding layers on the light-emitting region. CONSTITUTION:After the light-emitting region of a laser is made in a thin stripe shape, a light-waveguiding layer is formed on the clad layer around the region to be provided. No thick layers are produced on the active region of the laser. When a forward current flows between electrodes 10 and 8, carriers are injected into an InGaAsP active layer 3, and perform recombination- radiation. If the flowing current exceeds the laser oscillation threshold, the element starts laser-oscillating. When a forward current flows between electrodes 10 and 8, the refractive index of an InGaAsP guide layer 7 changes, and the laser characteristics of the oscillation wavelength and the oscillation intensity change.

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