专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06937038B2 Contactor having conductive particles in a hole as a contact electrode 有权
公开(公告)号：US06937038B2
公开(公告)日：2005-08-30
申请号：US10373072
申请日：2003-02-26
申请人： Shigeyuki Maruyama , Susumu Kida , Naoyuki Watanabe , Takafumi Hashitani , Ei Yano , Ichiro Midorikawa
发明人： Shigeyuki Maruyama , Susumu Kida , Naoyuki Watanabe , Takafumi Hashitani , Ei Yano , Ichiro Midorikawa
IPC分类号： G01R31/26 , G01R1/04 , G01R1/067 , G01R1/073 , H01L21/66 , H01L23/498 , G01R31/02
CPC分类号： G01R1/06733 , G01R1/0483 , G01R1/06711 , G01R1/06755 , G01R1/07314 , H01L23/49827 , H01L2924/0002 , H01L2924/00
摘要： A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

72. 发明申请

US20050110509A1 Contactor having conductive particles in a hole as a contact electrode 失效
标题翻译：在孔中具有作为接触电极的导电粒子的接触器
公开(公告)号：US20050110509A1
公开(公告)日：2005-05-26
申请号：US11023530
申请日：2004-12-29
申请人： Shigeyuki Maruyama , Susumu Kida , Naoyuki Watanabe , Takafumi Hashitani , Ei Yano , Ichiro Midorikawa
发明人： Shigeyuki Maruyama , Susumu Kida , Naoyuki Watanabe , Takafumi Hashitani , Ei Yano , Ichiro Midorikawa
IPC分类号： G01R31/26 , G01R1/04 , G01R1/067 , G01R1/073 , H01L21/66 , H01L23/498 , G01R31/02
CPC分类号： G01R1/06733 , G01R1/0483 , G01R1/06711 , G01R1/06755 , G01R1/07314 , H01L23/49827 , H01L2924/0002 , H01L2924/00
摘要： A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.
摘要翻译：提供一种接触器，该接触器包括绝缘基板，形成在绝缘基板中并从其表面沿垂直方向延伸的凹部，以及设置在凹部中的弹性导电颗粒。一部分导电粒子从绝缘基片的表面突出。

73. 发明授权

US08124239B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same 有权
标题翻译：二氧化硅膜形成材料，二氧化硅膜及其制造方法，多层布线结构及其制造方法以及半导体装置及其制造方法
公开(公告)号：US08124239B2
公开(公告)日：2012-02-28
申请号：US12640362
申请日：2009-12-17
申请人： Yoshihiro Nakata , Ei Yano
发明人： Yoshihiro Nakata , Ei Yano
IPC分类号： B32B9/04 , B32B13/04 , C08F2/46 , C08J7/18 , H01L21/31 , H01L21/469
CPC分类号： H01L21/3122 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/76801 , Y10T428/31663
摘要： The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH3 bond and an Si—CHx- bond, where x represents an integer of 0 to 2.
摘要翻译：本发明的二氧化硅薄膜形成材料包括硅氧烷聚合物，其包含作为其结构的一部分的CH x，Si-O-Si键，Si-CH 3键和Si-CH x键，其中x表示整数为0至2。

74. 发明授权

US08062414B2 Coating liquid for forming amorphous silica-based coating film with low dielectric constant 有权
标题翻译：用于形成具有低介电常数的无定形二氧化硅基涂膜的涂布液
公开(公告)号：US08062414B2
公开(公告)日：2011-11-22
申请号：US10533302
申请日：2003-10-27
申请人： Akira Nakashima , Miki Egami , Michio Komatsu , Yoshihiro Nakata , Ei Yano , Katsumi Suzuki
发明人： Akira Nakashima , Miki Egami , Michio Komatsu , Yoshihiro Nakata , Ei Yano , Katsumi Suzuki
IPC分类号： C04B41/50 , D06M15/643 , C09D183/04
CPC分类号： H01L21/02126 , C08G77/08 , C09D183/04 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316
摘要： The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.
摘要翻译：本发明涉及一种低介电常数为2.5以下，杨氏模量为6.0GPa以上，疏水性优异的无定形二氧化硅系涂膜用涂布液及其制备方法。涂布液可以含有通过在四烷基氢氧化铵（TAAOH）的存在下水解四烷基原硅酸盐（TAOS）和特定烷氧基硅烷（AS））而获得的硅化合物，或者可以含有通过水解或部分水解原硅酸四烷基酯 TAOS）在四烷基氢氧化铵（TAAOH）的存在下，将反应产物与特定的烷氧基硅烷或其水解产物或其部分水解产物混合，并根据需要水解全部或一部分混合物。此外，通过以特定比例和特定工艺条件混合上述组分来制备涂布液。

75. 发明申请

US20100155121A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：二氧化硅膜形成材料，二氧化硅膜及其制造方法，多层布线结构及其制造方法和半导体器件及其制造方法
公开(公告)号：US20100155121A1
公开(公告)日：2010-06-24
申请号：US12640362
申请日：2009-12-17
申请人： Yoshihiro Nakata , Ei Yano
发明人： Yoshihiro Nakata , Ei Yano
IPC分类号： H05K1/00 , B05D5/12
CPC分类号： H01L21/3122 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/76801 , Y10T428/31663
摘要： The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH3 bond and an Si—CHx- bond, where x represents an integer of 0 to 2.
摘要翻译：本发明的二氧化硅薄膜形成材料包括硅氧烷聚合物，其包含作为其结构的一部分的CH x，Si-O-Si键，Si-CH 3键和Si-CH x键，其中x表示整数为0至2。

76. 发明授权

US07659357B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same 有权
标题翻译：二氧化硅膜形成材料，二氧化硅膜及其制造方法，多层布线结构及其制造方法以及半导体装置及其制造方法
公开(公告)号：US07659357B2
公开(公告)日：2010-02-09
申请号：US11274094
申请日：2005-11-16
申请人： Yoshihiro Nakata , Ei Yano
发明人： Yoshihiro Nakata , Ei Yano
IPC分类号： C08G77/00 , H01L21/469
CPC分类号： H01L21/3122 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/76801 , Y10T428/31663
摘要： The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH3 bond and an Si—CHx- bond, where x represents an integer of 0 to 2.
摘要翻译：本发明的二氧化硅薄膜形成材料包括硅氧烷聚合物，其包含作为其结构的一部分的CH x，Si-O-Si键，Si-CH 3键和Si-CH x键，其中x表示整数为0至2。

77. 发明授权

US07655576B2 Insulator film, manufacturing method of multilayer wiring device and multilayer wiring device 有权
标题翻译：绝缘膜，多层布线装置及多层布线装置的制造方法
公开(公告)号：US07655576B2
公开(公告)日：2010-02-02
申请号：US11842412
申请日：2007-08-21
申请人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
发明人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/02348 , H01L21/31695 , H01L21/76807 , H01L21/7682 , H01L21/76825
摘要： In a method for manufacturing a semiconductor device, including forming an insulator film including a material having Si—CH3 bond and Si—OH bond, and irradiating the insulator film with ultraviolet rays, the rate of decrease of C concentration by X-ray photoelectron spectroscopy is not more than 30%, and the rate of decrease of one or more bonds selected from the group consisting of C—H bond, O—H bond and Si—O bond of Si—OH is not less than 10%, as a result of ultraviolet ray irradiation. A low-dielectric-constant insulator film that has a high film strength and can prevent increase of dielectric constant due to moisture absorption, a semiconductor device that can prevent device response speed delay and reliability decrease due to parasite capacity increase, and a manufacturing method therefor are provided.
摘要翻译：在制造半导体器件的方法中，包括形成包含具有Si-CH3键和Si-OH键的材料的绝缘膜，并用紫外线照射绝缘体膜，通过X射线光电子能谱法测定C浓度的降低速率不大于30％，并且由Si-OH的CH键，OH键和Si-O键组成的组中的一种或多种键的降低速率不低于10％，由于紫外线照射。一种低介电常数绝缘膜，其具有高的膜强度并且可以防止由于吸湿引起的介电常数的增加，能够防止器件响应速度延迟和可靠性由于寄生容量增加而降低的半导体器件及其制造方法被提供。

78. 发明申请

US20090081593A1 Method for forming resist pattern and method for manufacturing a semiconductor device 有权
标题翻译：用于形成抗蚀剂图案的方法和用于制造半导体器件的方法
公开(公告)号：US20090081593A1
公开(公告)日：2009-03-26
申请号：US12292170
申请日：2008-11-13
申请人： Junichi Kon , Ei Yano
发明人： Junichi Kon , Ei Yano
IPC分类号： H01L21/02 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/114 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/128 , Y10S430/143
摘要： The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.
摘要翻译：抗蚀剂材料包含具有对波长小于300nm的曝光光具有吸收峰的光酸产生器和具有波长为300nm或更大的曝光光的吸收峰的第二光酸产生器。形成抗蚀剂图案的方法包括用于选择性曝光的步骤，其将抗蚀剂材料的涂膜暴露于波长小于300nm的曝光光，以及通过使用具有波长为 300nm以上。半导体器件包括由抗蚀剂图案形成的图案。用于形成半导体器件的方法包括通过上述制造方法在下层形成抗蚀剂图案的步骤，以及通过使用抗蚀剂图案作为掩模通过蚀刻对下层进行图案化的步骤。

79. 发明授权

US07476970B2 Composition for forming insulating film and method for fabricating semiconductor device 有权
标题翻译：用于形成绝缘膜的组合物和用于制造半导体器件的方法
公开(公告)号：US07476970B2
公开(公告)日：2009-01-13
申请号：US11475000
申请日：2006-06-27
申请人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
发明人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/31633 , C09D183/14 , C09D183/16 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02222 , H01L21/02282 , H01L21/02348 , H01L21/31695
摘要： A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.
摘要翻译：一种制造半导体器件的方法，该半导体器件利用在衬底上形成多孔材料的第一绝缘膜的步骤; 在第一绝缘膜上形成包含含有Si-CH3键的硅化合物30-90％的第二绝缘膜的步骤，以及用形成在第一绝缘膜上的第二绝缘膜照射UV辐射的步骤，以固化第一绝缘膜绝缘膜。因此，具有消除CH 3基团的波长的紫外线辐射被第二绝缘膜充分吸收，由此通过UV固化优先地高度强化第一绝缘膜，并且第一绝缘膜可以具有不增加电介质的膜密度常数增加。

80. 发明申请

US20070232058A1 Composition for forming insulating film and method for fabricating semiconductor device 有权
标题翻译：用于形成绝缘膜的组合物和用于制造半导体器件的方法
公开(公告)号：US20070232058A1
公开(公告)日：2007-10-04
申请号：US11475000
申请日：2006-06-27
申请人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
发明人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
IPC分类号： H01L21/4763
CPC分类号： H01L21/31633 , C09D183/14 , C09D183/16 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02222 , H01L21/02282 , H01L21/02348 , H01L21/31695
摘要： The method for fabricating a semiconductor device comprises the step of forming a first insulating film 38 of a porous material over a substrate 10; the step of forming on the first insulating film 38 a second insulating film 40 containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film 40 formed on the first insulating film 38 to cure the first insulating film 38. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.
摘要翻译：制造半导体器件的方法包括在衬底10上形成多孔材料的第一绝缘膜38的步骤; 在第一绝缘膜38上形成包含含有Si-CH 3键的硅化合物30-90％的第二绝缘膜40的步骤，以及用第二绝缘膜照射UV辐射的步骤 40形成在第一绝缘膜38上以固化第一绝缘膜38。因此，具有消除CH 3 3基团的波长的紫外线辐射被第二绝缘膜充分吸收，由此通过UV固化优先地高度强化第一绝缘膜，并且第一绝缘膜可以具有膜密度增加而不增加介电常数。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式