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71. 发明申请

US20050058938A1 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050058938A1
公开(公告)日：2005-03-17
申请号：US10936753
申请日：2004-09-09
申请人： Seiichiro Tachibana , Tsunehiro Nishi , Tomohiro Kobayashi
发明人： Seiichiro Tachibana , Tsunehiro Nishi , Tomohiro Kobayashi
IPC分类号： G03C1/76 , G03F7/039
CPC分类号： G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
摘要翻译：包含式（1）至（4）的重复单元的聚合物，其中R 1，R 3，R 4和R 7为氢或甲基，R 2为酸不稳定基团，R 5和R 6是氢或羟基，R 8是内酯结构基团，其Mw为1,000-50,000。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。

72. 发明授权

US06605678B2 Polymer, resist composition and patterning process 有权
公开(公告)号：US06605678B2
公开(公告)日：2003-08-12
申请号：US10307996
申请日：2002-12-03
申请人： Tsunehiro Nishi , Mutsuo Nakashima , Tomohiro Kobayashi
发明人： Tsunehiro Nishi , Mutsuo Nakashima , Tomohiro Kobayashi
IPC分类号： C08F12400
CPC分类号： G03F7/0395 , C08F32/08 , G03F7/0045
摘要： A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1, R2, R3 and R4 are H or C1-15 alkyl, R1 and R2, and R3 and R4, taken together, may form a ring; R5 and R6 are H, C1-15 alkyl, acyl or alkylsulfonyl groups or C2-15 alkoxycarbonyl or alkoxyalkyl groups which may have halogen substituents; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

73. 发明授权

US07618765B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US07618765B2
公开(公告)日：2009-11-17
申请号：US12003834
申请日：2008-01-02
申请人： Tsunehiro Nishi , Seiichiro Tachibana , Katsuhiro Kobayashi
发明人： Tsunehiro Nishi , Seiichiro Tachibana , Katsuhiro Kobayashi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator which is a specific sulfonium salt compound. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]dodecane structure, di- or trihydroxyadamantyl units, and monocyclic lactone units.
摘要翻译：正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）作为特定锍盐化合物的酸产生剂。树脂（A）是包含具有疏水四环[4.4.0.12,5.17,10]十二烷结构的叔烷基保护基单元，二羟基金刚烷基单元和三羟基金刚烷基单元和单环内酯单元的聚合物。

74. 发明授权

US07601479B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07601479B2
公开(公告)日：2009-10-13
申请号：US10936753
申请日：2004-09-09
申请人： Seiichiro Tachibana , Tsunehiro Nishi , Tomohiro Kobayashi
发明人： Seiichiro Tachibana , Tsunehiro Nishi , Tomohiro Kobayashi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , C08F224/00
CPC分类号： G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
摘要翻译：包含式（1）至（4）的重复单元的聚合物，其中R1，R3，R4和R7是氢或甲基，R2是酸不稳定基团，R5和R6是氢或羟基，R8是内酯结构基团，提供Mw为1,000-50,000的Mw。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。

75. 发明授权

US07541133B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US07541133B2
公开(公告)日：2009-06-02
申请号：US11984614
申请日：2007-11-20
申请人： Tsunehiro Nishi , Seiichiro Tachibana , Katsuhiro Kobayashi
发明人： Tsunehiro Nishi , Seiichiro Tachibana , Katsuhiro Kobayashi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]-dodecane structure, hydroxyadamantane units, monocyclic lactone units, and carboxylic acid units. The acid generator (B) is a specific sulfonium salt compound.
摘要翻译：正型抗蚀剂组合物包含（A）在酸作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。树脂（A）是包含具有疏水性四环[4.4.0.12,5.17,10] - 十二烷结构的叔烷基保护基单元，羟基金刚烷单元，单环内酯单元和羧酸单元的聚合物。酸产生剂（B）是特定的锍盐化合物。

76. 发明申请

US20080254386A1 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US20080254386A1
公开(公告)日：2008-10-16
申请号：US12003834
申请日：2008-01-02
申请人： Tsunehiro Nishi , Seiichiro Tachibana , Katsuhiro Kobayashi
发明人： Tsunehiro Nishi , Seiichiro Tachibana , Katsuhiro Kobayashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator which is a specific sulfonium salt compound. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]dodecane structure, di- or trihydroxyadamantyl units, and monocyclic lactone units.
摘要翻译：正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）作为特定锍盐化合物的酸产生剂。树脂（A）是包含具有疏水性四环[4.4.0.1 <2,5> 0,1,7,10-]十二烷结构的叔烷基保护基单元的聚合物，或三羟基金刚烷基单元和单环内酯单元。

77. 发明授权

US06605408B2 Resist composition and patterning process 有权
公开(公告)号：US06605408B2
公开(公告)日：2003-08-12
申请号：US09832919
申请日：2001-04-12
申请人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
发明人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
IPC分类号： C08F200
CPC分类号： G03F7/0395 , C08G61/06 , C08G61/08 , G03F7/0397
摘要： A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

78. 发明授权

US07611821B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US07611821B2
公开(公告)日：2009-11-03
申请号：US11774300
申请日：2007-07-06
申请人： Tsunehiro Nishi , Takeshi Kinsho
发明人： Tsunehiro Nishi , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/114
摘要： A positive resist composition is provided comprising (A) a resin component having a carboxylic acid moiety protected with an acetal protective group which is decomposable under the action of an acid, wherein in the carboxylic acid moiety protected with an acetal protective group, deprotection occurs not by way of β-elimination, and (B) a photoacid generator. The resist composition exhibits a high resolution when processed by ArF lithography.
摘要翻译：提供了一种正性抗蚀剂组合物，其包含（A）具有羧酸部分保护的树脂组分，所述羧酸部分用可在酸作用下分解的缩醛保护基保护，其中在羧酸部分用缩醛保护基保护，脱保护不发生通过β消除，和（B）光致酸发生器。当通过ArF光刻处理时，抗蚀剂组合物显示出高分辨率。

79. 发明授权

US06830866B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US06830866B2
公开(公告)日：2004-12-14
申请号：US10170345
申请日：2002-06-14
申请人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7038
CPC分类号： G03F7/0392 , C08G61/06 , G03F7/0395 , G03F7/0397
摘要： A resist composition comprising a hydrogenated product of ring-opening metathesis polymer and a poly(meth)acrylic acid derivative as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etch resistance, and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：包含开环易位聚合物和聚（甲基）丙烯酸衍生物作为基础树脂的氢化产物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于微图案化电子束或深紫外线。

80. 发明授权

US06673517B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06673517B2
公开(公告)日：2004-01-06
申请号：US10003117
申请日：2001-12-06
申请人： Tsunehiro Nishi , Takeshi Kinsho
发明人： Tsunehiro Nishi , Takeshi Kinsho
IPC分类号： C08G6534
CPC分类号： C08G61/08 , C08G61/02 , Y10S430/106 , Y10S430/111
摘要： A polymer comprising recurring units of formula (1) and/or (2) wherein R1 and R2 are H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents; R3 and R4 are H, C1-15 alkyl or alkoxy or C2-15, alkoxyalkyl which may have halogen substituents, and R3 and R4 may together bond with the carbon atom to form an aliphatic ring, or R3 and R4, taken together, may be an oxygen atom; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：包含式（1）和/或（2）的重复单元的聚合物，其中R 1和R 2是H，C 1-15烷基，酰基或烷基磺酰基或可以具有卤素取代基的C 2-5烷氧基羰基或烷氧基烷基; R 3和R 4是H，C 1-15烷基或烷氧基或C 2-5-15，可具有卤素取代基的烷氧基烷基，R 3和R 4可以与碳原子一起键合形成脂族环或R 3和R 4一起可以是氧原子; 并且k = 0或1，并且具有1,000-500,000的Mw是新颖的。包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。

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