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71. 发明申请

US20060208291A1 Solid state image pickup device and camera 失效
标题翻译：固态图像拾取装置和相机
公开(公告)号：US20060208291A1
公开(公告)日：2006-09-21
申请号：US11373191
申请日：2006-03-13
申请人： Toru Koizumi , Akira Okita , Masanori Ogura , Shin Kikuchi , Tetsuya Itano
发明人： Toru Koizumi , Akira Okita , Masanori Ogura , Shin Kikuchi , Tetsuya Itano
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/14625 , H01L27/14645 , H01L27/14656 , H01L27/14806 , H04N5/3559 , H04N9/045
摘要： A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.
摘要翻译：提供一种可以通过使用与浮动扩散区域分开设置的电容器区域的布局来防止混色的固态图像拾取装置和使用这种装置的相机。光电二极管区域是包括光电二极管的矩形区域。电容器区域包括载体保持单元，并且布置在作为具有比一侧更长的一侧的区域的光电二极管区域的矩形的一侧。在MOS单元区域中，在另一侧设置包括具有比另一侧长的方向的输出单元的输出单元区域，该另一侧与光电二极管区域的矩形的一侧相交。栅极区域和FD区域布置在光电二极管区域和电容器区域之间。

72. 发明授权

US09093350B2 Member for solid-state image pickup device and method for manufacturing solid-state image pickup device having first and second wiring structures with a concave portion between first and second substrates 有权
标题翻译：用于固态摄像装置的部件和用于制造具有在第一和第二基板之间具有凹部的第一和第二布线结构的固态图像拾取装置的方法
公开(公告)号：US09093350B2
公开(公告)日：2015-07-28
申请号：US13808865
申请日：2011-07-04
申请人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Junji Iwata
发明人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Junji Iwata
IPC分类号： H01L27/00 , H01L27/146 , H01L31/04
CPC分类号： H01L27/1469 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/14689 , H01L31/04 , H01L2224/05655
摘要： A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
摘要翻译：提供具有无间隙的接合面的固态摄像装置的构件及其制造方法。该制造方法包括以下步骤：在其主面上设置设置有光电转换器的第一基板和第一布线结构，在其主面上设置设置有周边电路的一部分的第二基板和第二布线结构，使得第一基板，第一布线结构，第二布线结构和第二基板按顺序布置。此外，第一布线结构的上表面和第二布线结构的上表面中的至少一个具有凹部，并且导电材料形成凹部的底面。

73. 发明授权

US08411187B2 Photoelectric conversion device, method for producing photoelectric conversion device, and image pickup system 有权
标题翻译：光电转换装置，光电转换装置的制造方法以及摄像系统
公开(公告)号：US08411187B2
公开(公告)日：2013-04-02
申请号：US13040607
申请日：2011-03-04
申请人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
发明人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
IPC分类号： H04N3/14 , H01L31/062
CPC分类号： H01L27/14616 , H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.
摘要翻译：光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

74. 发明授权

US08325257B2 Solid-state image pickup device and method for driving the same 有权
标题翻译：固体摄像装置及其驱动方法
公开(公告)号：US08325257B2
公开(公告)日：2012-12-04
申请号：US12944646
申请日：2010-11-11
申请人： Tomoyuki Noda , Tetsuya Itano
发明人： Tomoyuki Noda , Tetsuya Itano
IPC分类号： H04N3/14 , H04N5/228
CPC分类号： H04N5/3698 , H04N5/378
摘要： A solid-state image pickup device includes a plurality of common output lines receiving signals from a plurality of pixels, a plurality of column amplifier units amplifying the signals, a plurality of storage capacitors storing the amplified signals, a first transistor controlling electrical conduction between the output node of the column amplifier unit and the input node of a storage capacitor, a switch switching current for operating the column amplifier unit between a first current and a second current smaller than the first current, and a controller inhibiting, while the second current is flowing through the column amplifier unit, a potential at the output node of the column amplifier unit from approaching an off-state voltage supplied to a gate of the first transistor in an OFF state of the first transistor.
摘要翻译：一种固态摄像装置，包括从多个像素接收信号的多个公共输出线，放大该信号的多个列放大器单元，存储放大信号的多个存储电容器，第一晶体管，列放大器单元的输出节点和存储电容器的输入节点，用于在第一电流和小于第一电流的第二电流之间操作列放大器单元的开关切换电流，以及控制器，当第二电流为流过列放大器单元时，列放大器单元的输出节点处的电位在第一晶体管的截止状态下接近提供给第一晶体管的栅极的截止状态电压。

75. 发明授权

US08289431B2 Image sensing device and image sensing system 有权
标题翻译：影像感测装置及影像感应系统
公开(公告)号：US08289431B2
公开(公告)日：2012-10-16
申请号：US12470580
申请日：2009-05-22
申请人： Tetsuya Itano
发明人： Tetsuya Itano
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00
CPC分类号： H04N5/3651 , H04N5/3742 , H04N5/378 , H04N9/045
摘要： An image sensing device including a pixel array having a plurality of pixels which form rows and columns. Each pixel is connected to one of a plurality of column signal lines. The image sensing device also includes a plurality of readout units that read out signals from the pixel array via the plurality of column signal lines, each of the plurality of readout units including an input transistor that receives a signal on the column signal line, a first load transistor that supplies an electric current to the input transistor, and a plurality of bias supply units that supply bias voltages to gates of the first load transistors of the plurality of readout units. The first load transistors of the readout units, which are arranged adjacent to each other, are each connected to different bias supply units.
摘要翻译：一种图像感测装置，包括具有形成行和列的多个像素的像素阵列。每个像素连接到多条列信号线之一。图像感测装置还包括多个读出单元，其经由多个列信号线从像素阵列读出信号，多个读出单元中的每一个包括接收列信号线上的信号的输入晶体管，第一向输入晶体管供给电流的负载晶体管，以及向多个读出单元的第一负载晶体管的栅极供给偏置电压的多个偏压供给单元。读出单元的彼此相邻布置的第一负载晶体管各自连接到不同的偏置电源单元。

76. 发明授权

US08252614B2 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器及成像系统
公开(公告)号：US08252614B2
公开(公告)日：2012-08-28
申请号：US12780811
申请日：2010-05-14
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L21/00 , H01L21/4763
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

77. 发明申请

US20120194724A1 IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM 有权
标题翻译：图像拾取器件和图像拾取系统
公开(公告)号：US20120194724A1
公开(公告)日：2012-08-02
申请号：US13442235
申请日：2012-04-09
申请人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
发明人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3595 , H04N5/374
摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
摘要翻译：提供了一种图像拾取装置，包括将光转换成电荷的光电转换元件，用于将转换的电荷转移到浮动节点的传输门，源极跟随器晶体管，用于基于浮动节点的电压将信号输出到信号线和钳位电路，在第一电压和第二电压下限幅信号线。

78. 发明申请

US20120086841A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING DEVICE 失效
标题翻译：光电转换装置和图像捕获装置
公开(公告)号：US20120086841A1
公开(公告)日：2012-04-12
申请号：US13326731
申请日：2011-12-15
申请人： Toshiaki Ono , Toru Koizumi , Tetsuya Itano
发明人： Toshiaki Ono , Toru Koizumi , Tetsuya Itano
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3598
摘要： A photoelectric conversion device includes a pixel unit including a photoelectric converter, an amplifier arranged on the output side of the pixel unit, an output unit arranged on the output side of the amplifier, a first restriction circuit, and a second restriction circuit. The first restriction circuit restricts, between the amplifier and the output unit, a noise level read out from the pixel unit via the amplifier in reading out the noise level from the pixel unit. The second restriction circuit restricts, between the photoelectric converter and the amplifier, a noise level to be provided to the amplifier in reading out the noise level from the pixel unit.
摘要翻译：光电转换装置包括：像素单元，包括光电转换器，布置在像素单元的输出侧的放大器，布置在放大器的输出侧的输出单元，第一限制电路和第二限制电路。第一限制电路在放大器和输出单元之间限制从像素单元读出噪声电平时经由放大器从像素单元读出的噪声电平。第二限制电路在光电转换器和放大器之间限制在从像素单元读出噪声电平时提供给放大器的噪声电平。

79. 发明授权

US07978241B2 Solid state image pickup device and camera which can prevent color mixture 有权
标题翻译：可以防止混色的固态图像拾取装置和相机
公开(公告)号：US07978241B2
公开(公告)日：2011-07-12
申请号：US12259359
申请日：2008-10-28
申请人： Toru Koizumi , Akira Okita , Masanori Ogura , Shin Kikuchi , Tetsuya Itano
发明人： Toru Koizumi , Akira Okita , Masanori Ogura , Shin Kikuchi , Tetsuya Itano
IPC分类号： H04N5/335 , H04N5/222
CPC分类号： H01L27/14603 , H01L27/14625 , H01L27/14645 , H01L27/14656 , H01L27/14806 , H04N5/3559 , H04N9/045
摘要： A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.
摘要翻译：提供一种可以通过使用与浮动扩散区域分开设置的电容器区域的布局来防止混色的固态图像拾取装置和使用这种装置的相机。光电二极管区域是包括光电二极管的矩形区域。电容器区域包括载体保持单元，并且布置在作为具有比一侧更长的一侧的区域的光电二极管区域的矩形的一侧。在MOS单元区域中，在另一侧设置包括具有比另一侧长的方向的输出单元的输出单元区域，该另一侧与光电二极管区域的矩形的一侧相交。栅极区域和FD区域布置在光电二极管区域和电容器区域之间。

80. 发明申请

US20110157447A1 PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM 有权
公开(公告)号：US20110157447A1
公开(公告)日：2011-06-30
申请号：US13040607
申请日：2011-03-04
申请人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
发明人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
IPC分类号： H04N5/335
CPC分类号： H01L27/14616 , H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

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