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    • 5. 发明申请
    • METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR
    • 制造固态图像传感器的方法
    • US20120100659A1
    • 2012-04-26
    • US13276753
    • 2011-10-19
    • Junji Iwata
    • Junji Iwata
    • H01L31/18
    • H01L27/14612H01L27/1461H01L27/14641H01L27/14689
    • A method for manufacturing a solid-state image sensor includes forming a gate electrode structure including a gate electrode on a gate insulating film formed on a semiconductor substrate, and implanting ions into a first region and simultaneously implanting the ions into a second region of the semiconductor substrate via the gate electrode structure and the gate insulating film, wherein the first region is a region where a charge accumulation region is to be formed, and the second region is a region where an extended region that extends from the charge accumulation region to a portion below the gate electrode is to be formed, and a mean projected range of the ions in the step of simultaneous implanting of the ions into the first region and the second region is larger than a sum total of thicknesses of the gate electrode and the gate insulating film.
    • 固态图像传感器的制造方法包括:在形成于半导体基板上的栅极绝缘膜上形成包括栅电极的栅电极结构,将离子注入第一区域,同时将离子注入半导体的第二区域 通过栅极电极结构和栅极绝缘膜的衬底,其中第一区域是要形成电荷聚集区域的区域,并且第二区域是从电荷累积区域延伸到部分的区域 在栅极电极下方形成,同时将离子注入第一区域和第二区域的步骤中的离子的平均投射范围大于栅极电极和栅极绝缘体的厚度的总和 电影。
    • 10. 发明授权
    • Solid-state image sensor and camera having impurity diffusion region
    • 具有杂质扩散区域的固态图像传感器和相机
    • US08648944B2
    • 2014-02-11
    • US12949335
    • 2010-11-18
    • Junji Iwata
    • Junji Iwata
    • H04N3/14H04N5/335H01L31/062H01L31/113H01L21/70
    • H01L27/1463H01L27/14609H04N5/335H04N5/3745
    • A solid-state image sensor including a plurality of pixels formed on a semiconductor substrate, each pixel comprising a photoelectric conversion element including a charge accumulation region of a first conductivity type, a floating diffusion of the first conductivity type, and a transfer transistor which transfers charge in the charge accumulation region to the floating diffusion, comprises an element isolation region made of an insulator and arranged to isolate adjacent pixels from each other, and an impurity diffusion region of a second conductivity type arranged inside the semiconductor substrate to isolate adjacent pixels from each other, wherein a peak position of an impurity concentration of the impurity diffusion region of one pixel is disposed within a width of the floating diffusion, of the one pixel, along a straight line passing through the photoelectric conversion element, a gate electrode of the transfer transistor, and the floating diffusion which are of the one pixel.
    • 一种固态图像传感器,包括形成在半导体衬底上的多个像素,每个像素包括光电转换元件,该光电转换元件包括第一导电类型的电荷累积区域,第一导电类型的浮动扩散区和转移晶体管 电荷累积区域中的电荷到浮动扩散部分包括由绝缘体制成的元件隔离区域,其被布置成将相邻的像素彼此隔离;以及布置在半导体衬底内部的第二导电类型的杂质扩散区域,以将邻近的像素与 其中,一个像素的杂质扩散区域的杂质浓度的峰值位置沿着通过光电转换元件的直线设置在该一个像素的浮动扩散部的宽度内,栅极电极 传输晶体管和浮动扩散。